JPH03184353A - Film carrier with bump and manufacture thereof - Google Patents
Film carrier with bump and manufacture thereofInfo
- Publication number
- JPH03184353A JPH03184353A JP1321544A JP32154489A JPH03184353A JP H03184353 A JPH03184353 A JP H03184353A JP 1321544 A JP1321544 A JP 1321544A JP 32154489 A JP32154489 A JP 32154489A JP H03184353 A JPH03184353 A JP H03184353A
- Authority
- JP
- Japan
- Prior art keywords
- film carrier
- lead
- bonding
- hole
- opened
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 229910000679 solder Inorganic materials 0.000 claims abstract description 15
- 238000012545 processing Methods 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 19
- 238000007747 plating Methods 0.000 abstract description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052786 argon Inorganic materials 0.000 abstract description 2
- 239000001257 hydrogen Substances 0.000 abstract description 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000005219 brazing Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3478—Applying solder preforms; Transferring prefabricated solder patterns
Landscapes
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は半導体素子の実装に使用されるフィルムキャリ
アに関し、特にフィルムキャリアのリードの先端部にバ
ンプを有するバンプ付フィルムキャリアとその製造方法
に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a film carrier used for mounting semiconductor elements, and more particularly to a bumped film carrier having bumps at the tips of the leads of the film carrier and a method for manufacturing the same. .
（従来の技術）
半導体素子のボンディング方式の一つに高速で量産性に
富み、かつ、高い信頼性を有する方式として複数の電極
を一度にボンディングすることが可能なフィルムキャリ
アによる方式がある。(Prior Art) One of the bonding methods for semiconductor devices is a method using a film carrier that can bond a plurality of electrodes at once, as a method that is high-speed, mass-producible, and highly reliable.
このフィルムキャリアは第３図に示すようにデバイス孔
が形成された可撓性樹脂フィルムｌ上にデバイスに延在
するように形成された複数本のり−ド２が保持されたも
ので、半導体素子３のアルミニウム電極４上に形成され
た金バンプ５とフィルムキャリアのリード２の先端とを
熱圧着及び超音波印加により接合するものである。As shown in Fig. 3, this film carrier has a flexible resin film l in which device holes are formed, and a plurality of leads 2 formed to extend to the device are held thereon, and the semiconductor element is The gold bumps 5 formed on the aluminum electrodes 4 of No. 3 and the tips of the leads 2 of the film carrier are bonded by thermocompression bonding and application of ultrasonic waves.
しかしながら、このような半導体素子３側にバンプ電極
を形成する方法としては、電極形成部以外をマスクして
電極形成部のみにろう材組成を被着する部分メツキ法、
部分蒸着法等が考えられるが、メツキ法によるとメツキ
浴からの不純物が混入することにより半導体素子そのも
のの歩留りを低下させる恐れがあり、また蒸着法は一般
にコストが高く特に金を成分とするろう材で電極を形成
する場合はそのコストも無視し得ない。However, methods for forming bump electrodes on the side of the semiconductor element 3 include a partial plating method in which the area other than the electrode formation area is masked and a brazing material composition is applied only to the electrode formation area;
Partial evaporation methods can be considered, but the plating method has the risk of reducing the yield of the semiconductor device itself due to the contamination of impurities from the plating bath, and the evaporation method is generally high in cost, especially when metals contain gold as a component. When forming electrodes using materials, the cost cannot be ignored.
そこで第４図に示すようにリード２の先端部分に転写バ
ンプ法、エツチング法によりバンプ６を形成し半導体素
子３のアルミニウムバッド４を未処理のままでボンディ
ングすることができるバンプ付フィルムキャリアが提案
されている。Therefore, as shown in FIG. 4, a film carrier with bumps has been proposed, in which bumps 6 are formed on the tips of the leads 2 by a transfer bump method or an etching method, and the aluminum pads 4 of the semiconductor elements 3 can be bonded to them without being processed. has been done.
転写バンプ法は第５図に示すような各工程からなる。即
ち、（イ）基板７上に導電層８を形成し、（ロ）その上
に絶縁層９を、（ハ）次いでレジスト膜１０を形成した
後、（ニ）マスク１１を用いて露光し、光の照射領域に
重合反応を起こし、（ネ）レジスト膜１０の現象と絶縁
層９のエツチング処理により開孔部１２を形成し、（へ
）そして開孔部１２に金メツキを施してバンプ１３を形
成した後、（ト）フィルムキャリア１４のリード１５の
先端にバンプ１３を転写するのである。The transfer bump method consists of steps as shown in FIG. That is, (a) a conductive layer 8 is formed on the substrate 7, (b) an insulating layer 9 is formed thereon, (c) a resist film 10 is formed thereon, and (d) exposure is performed using a mask 11. A polymerization reaction is caused in the light irradiation area, (v) an opening 12 is formed by the phenomenon of the resist film 10 and an etching process of the insulating layer 9, and (v) the opening 12 is plated with gold to form a bump 13. After forming the bumps 13, (g) the bumps 13 are transferred to the tips of the leads 15 of the film carrier 14.
（発明が解決しようとする課題）
しかしながら、このバンプ形成法によればバンプ形成ま
でに、現像、エツチング、メツキ等の湿式処理を必要と
するため、レジスト残、エツチング残による仕上りバン
プ１３の形状、寸法のばらつきが大きく、半導体素子３
とのボンディングの際に接続不良、隣接の電極への接触
等を招くことがある。また、高価なマスク及び高価な露
光装置が必要であり、リードパターンの設計変更がある
とそれに伴なってマスク１１の変更を要する。(Problem to be Solved by the Invention) However, according to this bump forming method, wet processing such as development, etching, plating, etc. is required before forming the bump, so the shape of the finished bump 13 due to resist residue and etching residue is Semiconductor element 3 has large variations in dimensions.
When bonding with the electrode, it may lead to poor connection or contact with adjacent electrodes. Further, an expensive mask and an expensive exposure device are required, and if there is a change in the design of the lead pattern, the mask 11 must be changed accordingly.
一方、エツチング法によりリード先端を突起状に形成す
るバンプ形成法では、リードの材質に通常銅を使用して
いるためバンプは銅で形成されることになるが、この銅
バンプはボンディング時に変形が少なくたとえ該バンプ
が金メツキされているとしてもそのままでは接合しにく
いものである。On the other hand, in the bump formation method in which the tips of the leads are formed into protrusions using an etching method, the bumps are formed of copper because copper is normally used as the material for the leads, but these copper bumps do not deform during bonding. Even if the bumps are plated with gold, they are difficult to bond as they are.
従って、この銅バンプの相手側になる半導体素子３のア
ルミニウム電極４上に金の蒸着膜を形成しておく必要が
あり、その分余分のコストが掛る。Therefore, it is necessary to form a gold vapor deposited film on the aluminum electrode 4 of the semiconductor element 3 which is the other side of the copper bump, which increases the cost accordingly.
本発明の目的は、構造が簡単で製造し易く、安価に得ら
れるバンプ付フィルムキャリアを提供するものである。An object of the present invention is to provide a bumped film carrier that has a simple structure, is easy to manufacture, and can be obtained at low cost.
（課題を解決するための手段）
上記目的を達成するために本発明のバンプ付フィルムキ
ャリアはリード先端部分の穿孔された開孔部に半田ボー
ルが熱圧着により固定されている点に特徴がある。また
このバンプ形成方法はレーザーによりフィルムキャリア
のリード先端部分に半田ボールを載置するための開孔部
を穿孔し、この開孔部へ半田ボールを載置し、熱圧着に
より固定する点に特徴がある。(Means for Solving the Problems) In order to achieve the above object, the film carrier with bumps of the present invention is characterized in that solder balls are fixed to the perforated openings of the lead tips by thermocompression bonding. . Additionally, this bump forming method is characterized by using a laser to make an opening for placing a solder ball on the lead end of the film carrier, placing the solder ball in this opening, and fixing it by thermocompression bonding. There is.
第１図は本発明のバンプ付フィルムキャリアの構成を示
す図で、リード１６の先端部分の開孔に半田ボール１７
が嵌入、圧着固定されている。このようなフィルムキャ
リアは第２図に示すように（イ）まず、リード１６に通
常の金あるいは錫メツキ仕上げを施す前に、リード１６
の先端部をＹＡＧレーザーのようなレーザーのパルスに
より穿孔する。ただし孔は半田ボール１７の径よりも若
干小さめに穿孔する。（ロ）次にリード表面に金あるい
は錫メツキ仕上げを施した後、半田ボール１７を開孔１
８へ載置して、水素１０％アルゴン９０％程度の還元雰
囲気中でボンディングツールにより熱圧着することによ
り固定する。FIG. 1 is a diagram showing the configuration of the bumped film carrier of the present invention, in which solder balls 17 are inserted into the openings at the tips of the leads 16.
is inserted and fixed by crimping. As shown in FIG.
The tip of the hole is perforated by pulses of a laser such as a YAG laser. However, the hole is made to be slightly smaller than the diameter of the solder ball 17. (b) Next, after gold or tin plating is applied to the lead surface, the solder ball 17 is drilled into the hole 1.
8 and fixed by thermocompression bonding using a bonding tool in a reducing atmosphere of about 10% hydrogen and 90% argon.
この場合リード１６に施された金あるいは錫メツキ面と
半田ボール１７が圧着固定される程度の圧力で充分であ
り、ツール温度２００〜３００ ’Ｃ、ボンディング時
間０．５秒程度が適当である。従ってこのようなボンデ
ィング条件では半田ボール１７の形状が変化することは
ない。In this case, it is sufficient to press the gold or tin plated surface of the lead 16 and the solder ball 17 with pressure, and a tool temperature of 200 to 300'C and a bonding time of about 0.5 seconds are appropriate. Therefore, under such bonding conditions, the shape of the solder ball 17 does not change.
（作用）
本発明のバンプ付フィルムキャリアにおいてレーザーに
より穿孔された開孔１８の断面は第２図（イ）の如く鼓
状に穿孔されるので金ボール１７を所定の位置に正確に
載置することができ、しがも熱圧着により固定した後の
バンプの高さ及び形状は均一である。(Function) In the bumped film carrier of the present invention, the laser-drilled apertures 18 have a drum-shaped cross section as shown in FIG. However, the height and shape of the bump after being fixed by thermocompression bonding are uniform.
また、ＹＡＧレーザーの出力、パルス幅を調整すること
により任意の径で穿孔することが可能であり、半田ボー
ル１７をリード開孔１８へ載置した状態での高さを調整
できる。Furthermore, by adjusting the output and pulse width of the YAG laser, it is possible to drill holes with an arbitrary diameter, and the height of the solder ball 17 placed in the lead hole 18 can be adjusted.
さらにフィルムキャリア全体を反転させてり−ド１６の
裏面から半田ボール１７を載置すれば裏面バンプ付のフ
ィルムキャリアを製造することも可能であり、半導体素
子とフェースダウン、フェースアップのいずれのボンデ
ィングも行うことができる。Furthermore, by inverting the entire film carrier and placing the solder balls 17 from the back side of the board 16, it is also possible to manufacture a film carrier with bumps on the back side, allowing for face-down or face-up bonding with semiconductor elements. can also be done.
（発明の効果）
本発明のバンプ付フィルムキャリアによれば、多数の均
一形状、均一寸法のバンプな容易に形成することができ
、しかも所定の位置に正確に形成することができるので
半導体素子とのボンディングの際に接続不良やショート
事故がなく信頼性の高いバンプ接続を行うことができる
。(Effects of the Invention) According to the film carrier with bumps of the present invention, a large number of bumps having a uniform shape and size can be easily formed, and can be formed accurately at a predetermined position. It is possible to perform highly reliable bump connections without connection failures or short-circuit accidents during bonding.
第１図は本発明のバンプ付フィルムキャリアの構成を示
す図で、第２図はそのバンプ形成法を工程的に示す図で
ある。第３図は従来のフィルムキャリアとバンプ付半導
体素子との関係を示す図、第４図は従来のバンプ付フィ
ルムキャリアと半導体素子との関係を示す図。第５図は
従来のバンプ形成方法を示す工程図である。
１６・・・リード、１７・・・半田ボール、１８・・・
開孔部・FIG. 1 is a diagram showing the structure of the bumped film carrier of the present invention, and FIG. 2 is a diagram showing the process of forming the bumps. FIG. 3 is a diagram showing the relationship between a conventional film carrier and a semiconductor element with bumps, and FIG. 4 is a diagram showing the relationship between a conventional film carrier with bumps and a semiconductor element. FIG. 5 is a process diagram showing a conventional bump forming method. 16...Lead, 17...Solder ball, 18...
Opening part/
Claims (2)
開孔部に半田ボールが圧着により固定されていることを
特徴とするバンプ付フィルムキャリア。(1) A film carrier with bumps, characterized in that a solder ball is fixed by pressure bonding to an opening formed at the tip of a lead of the film carrier.
工により穿孔し、この開孔部へ半田ボールを載置して、
熱圧着により固定することを特徴とするバンプ付フィル
ムキャリアの製造方法。(2) Drill a hole at the tip of the lead of the film carrier by laser processing, place a solder ball in this hole,
A method for manufacturing a film carrier with bumps, which is fixed by thermocompression bonding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1321544A JPH03184353A (en) | 1989-12-13 | 1989-12-13 | Film carrier with bump and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1321544A JPH03184353A (en) | 1989-12-13 | 1989-12-13 | Film carrier with bump and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03184353A true JPH03184353A (en) | 1991-08-12 |
Family
ID=18133744
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1321544A Pending JPH03184353A (en) | 1989-12-13 | 1989-12-13 | Film carrier with bump and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03184353A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5341564A (en) * | 1992-03-24 | 1994-08-30 | Unisys Corporation | Method of fabricating integrated circuit module |
| US5762258A (en) * | 1996-07-23 | 1998-06-09 | International Business Machines Corporation | Method of making an electronic package having spacer elements |
-
1989
- 1989-12-13 JP JP1321544A patent/JPH03184353A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5341564A (en) * | 1992-03-24 | 1994-08-30 | Unisys Corporation | Method of fabricating integrated circuit module |
| US5762258A (en) * | 1996-07-23 | 1998-06-09 | International Business Machines Corporation | Method of making an electronic package having spacer elements |
| US5941449A (en) * | 1996-07-23 | 1999-08-24 | International Business Machines Corporation | Method of making an electronic package having spacer elements |
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