JPH03183699A - Production of sic whisker - Google Patents

Production of sic whisker

Info

Publication number
JPH03183699A
JPH03183699A JP31961289A JP31961289A JPH03183699A JP H03183699 A JPH03183699 A JP H03183699A JP 31961289 A JP31961289 A JP 31961289A JP 31961289 A JP31961289 A JP 31961289A JP H03183699 A JPH03183699 A JP H03183699A
Authority
JP
Japan
Prior art keywords
starting material
raw material
whiskers
sic whiskers
diameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP31961289A
Other languages
Japanese (ja)
Other versions
JPH0649639B2 (en
Inventor
Masaru Akiyama
勝 秋山
Shigeto Mori
森 繁人
Osamu Machida
修 町田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokai Carbon Co Ltd
Original Assignee
Tokai Carbon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokai Carbon Co Ltd filed Critical Tokai Carbon Co Ltd
Priority to JP31961289A priority Critical patent/JPH0649639B2/en
Publication of JPH03183699A publication Critical patent/JPH03183699A/en
Publication of JPH0649639B2 publication Critical patent/JPH0649639B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PURPOSE:To improve quality of the subject material by adding a specified amt. of a metallic catalyst to a starting material for an Si source and allowing the starting material to react with a carbon material under specified heating conditions. CONSTITUTION:A metallic catalyst such as Fe, Co, Ni, Mn, Ca and the oxide, carbonate, sulfate or nitrate thereof is uniformly supported on a starting material for an Si source such as silica gel by >=0.06mol per 1mol of the starting material. This catalyst supported starting material is mixed with 60-120wt.% carbon material such as carbon black having >=100ml/100g DBP oil absorption. This mixture is filled into a reactor, heated to 1,550-1,800 deg.C at >=10 deg.C/min heating rate in a nonoxidizing atmosphere of gaseous Ar, etc., and brought into a reaction under heating at the temp. for a prescribed time. The resulting reaction product is taken out of the reactor and SiC whiskers are obtd.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、直径2.0μmを越える径大タイプのSiC
ウィスカーを製造する方法に関する。
Detailed Description of the Invention [Industrial Application Field] The present invention is directed to a large-diameter type SiC with a diameter exceeding 2.0 μm.
This invention relates to a method of manufacturing whiskers.

〔従来の技術〕[Conventional technology]

5iCO針状単結晶で構成されるウィスカーは、比強度
、比弾性率、耐熱性、化学的安定性などの面で卓越した
性能特性を有することから各種のプラスチック材、金属
材あるいはセラミックス材の複合強化材として有用され
ている。
Whiskers composed of acicular single crystals of 5iCO have excellent performance characteristics in terms of specific strength, specific modulus of elasticity, heat resistance, and chemical stability, so they can be used as composites of various plastic materials, metal materials, or ceramic materials. It is useful as a reinforcing material.

このうち、特に破壊靭性に乏しいセラミックス材の複合
強化は、近時の重要な開発課題とされている。セラミッ
クス材の破壊靭性をウィスカーの複合化で向上させる機
構は、組織内部に分散したウィスカーがセラミックス体
に発生するクラックの成長を停止または抑制すると共t
こ、クランク進行方向を屈曲化させて応力集中を緩和す
る機能をはたし、さらにウィスカーの引き抜き作用によ
りクランク先端でのエネルギーを吸収する等の現象に基
づくものとされているが、これらセラミックス材の高靭
化にはウィスカーの性状として直径の大きな径大タイプ
のものを複合させることが効果的であることが確認され
ている。
Among these, composite strengthening of ceramic materials, which have particularly poor fracture toughness, has been considered an important development issue in recent years. The mechanism by which the fracture toughness of ceramic materials is improved by combining whiskers is that the whiskers dispersed within the structure stop or suppress the growth of cracks that occur in the ceramic body.
This is said to be based on phenomena such as bending the direction of crank movement to alleviate stress concentration, and absorbing energy at the tip of the crank through the pulling action of the whiskers. It has been confirmed that it is effective to combine whiskers with large diameter whiskers to increase their toughness.

また、ウィスカーは微細な針状繊維形態を呈する関係で
人体の呼吸器系に吸入された場合には肺の中に残留しや
すく、呼吸器障害を起こす危険性が指摘されている。こ
の障害性はウィスカー直径との関連が深く、とくに直径
2μm未満の性状において危険性が大きい。
Furthermore, since whiskers have the form of fine needle-like fibers, when they are inhaled into the human respiratory system, they tend to remain in the lungs, and it has been pointed out that there is a risk of respiratory disorders. This damage is closely related to the whisker diameter, and is especially dangerous when the whisker diameter is less than 2 μm.

このようなセラミックス材の複合高靭化および人体に対
する安全性確保の必要性から、少なくとも直径2.0 
μ閉を越える径大タイプのSiCウィスカーを得るため
の製法開発が強く要請されている。
Due to the need to improve the composite toughness of such ceramic materials and ensure safety for the human body, a diameter of at least 2.0 mm is required.
There is a strong demand for the development of a manufacturing method for obtaining large-diameter type SiC whiskers that exceed μ-closure.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

SiCウィスカーの生成手段には気相原料系および固相
原料系によるものとがあるが、このうち現状で最も工業
的な量産技術とされている固相原料系による製造方法(
例えば、特公昭60−44280号公報、特開昭61−
102416号公報)によって径大ウィスカーが生成で
きれば、生成ウィスカーの絡み合いを解体したり、副生
粒状物(ショット)からの分離を容易にするためにも有
利となる。
There are two methods for producing SiC whiskers, one using a gas-phase raw material system and the other using a solid-phase raw material system.
For example, Japanese Patent Publication No. 60-44280, Japanese Patent Publication No. 61-
If large-diameter whiskers can be produced by the method (Japanese Patent Publication No. 102416), it will be advantageous for disentangling the generated whiskers and facilitating their separation from by-product particles (shot).

しかしながら、固相原料系の製造方法によって径大タイ
プのSiCウィスカーを生成させることは仲々難しく、
これまでに直径2μmを越える性状のものを工業的に生
産した例は知られていない。
However, it is difficult to generate large-diameter SiC whiskers using solid-phase raw material-based manufacturing methods;
Until now, there is no known example of industrially producing a material with a diameter exceeding 2 μm.

本発明は、上記の要請に応えて径大タイプのSiCウィ
スカーを得るため、特に触媒添加条件の選定につき鋭意
研究を重ねた結果開発されたもので、その目的は、固相
原料系において直径2.0μ−を越える性状のSiCウ
ィスカーを製造するための方法を提供するところにある
The present invention was developed as a result of intensive research, especially regarding the selection of catalyst addition conditions, in order to obtain large-diameter SiC whiskers in response to the above-mentioned demands. An object of the present invention is to provide a method for producing SiC whiskers having properties exceeding .0μ.

(課題を解決するための手段) 上記の目的を達成するための本発明によるSiCウィス
カーの製造方法は、珪素源原料と炭材との混合原料を非
酸化雰囲気中で反応温度域に加熱処理してSiCウィス
カーを生成させる方法において、金属系触媒を珪素源原
料中のSi1モルに対し金属として0.06モル以上に
相当する配合量で置台原料に添加し、かつ加熱処理条件
を昇温速度10℃/min、以上、反応温度1550〜
1800℃に設定することを構成上の特徴とするもので
ある。
(Means for Solving the Problems) A method for producing SiC whiskers according to the present invention to achieve the above-mentioned object includes heating a mixed raw material of a silicon source material and a carbon material to a reaction temperature range in a non-oxidizing atmosphere. In the method for producing SiC whiskers, a metal catalyst is added to the table raw material in an amount equivalent to 0.06 mol or more of metal per 1 mol of Si in the silicon source raw material, and the heat treatment conditions are set such that the heating rate is 10. °C/min, reaction temperature 1550~
A structural feature is that the temperature is set at 1800°C.

本発明に用いられる珪素源原料としては、シリカゲル、
珪砂、石英粉、無機珪酸塩、有機珪素化合物など珪素成
分を含有する物質であればよいが、中でも5102を主
成分とするシリカゲル、石英粉、珪砂等の使用が有効で
ある。
The silicon source materials used in the present invention include silica gel,
Any substance containing a silicon component such as silica sand, quartz powder, inorganic silicate, or organic silicon compound may be used, and among them, silica gel containing 5102 as a main component, quartz powder, silica sand, etc. are effective.

炭材としては、カーボンブラック、コークス粉、黒鉛粉
、粉末活性炭などが使用できるが、最も好適な炭材はカ
ーボンブラックである。カーボンブラックを適用する場
合には、ファーネスプラヅク、チャンネルブラッ、り、
アセチレンブラック等の品種は問わないが、とくにDB
P吸油量が100 d1100g以上の特性を有するも
のが有効に使用される。
As the carbon material, carbon black, coke powder, graphite powder, powdered activated carbon, etc. can be used, but the most suitable carbon material is carbon black. When applying carbon black, use furnace plastic, channel black,
Any type of acetylene black etc., but especially DB
Those having a P oil absorption of 100 d1100 g or more are effectively used.

珪素源原料に対する炭材の配合割合は60〜120重量
%の範囲に設定し、両原料成分を十分均一に混合する。
The blending ratio of the carbonaceous material to the silicon source material is set in the range of 60 to 120% by weight, and both raw material components are mixed sufficiently uniformly.

上記の混合原料には、Fe、Co、Ni、Caおよびそ
れらの酸化物、塩化物、炭酸塩、硫酸塩、硝酸塩から選
択された金属系触媒が添加される。
A metal catalyst selected from Fe, Co, Ni, Ca, and their oxides, chlorides, carbonates, sulfates, and nitrates is added to the above mixed raw material.

本発明の第1の主要な要件は、混合原料に添加する前記
金属系触媒の配合条件で、金属系触媒を珪素源原料中の
Si1モルに対し金属として0.06モル以上に相当す
る配合量で混合原料に添加する。
The first major requirement of the present invention is the blending conditions of the metal catalyst added to the mixed raw material, such that the metal catalyst is added in an amount equivalent to 0.06 mol or more as metal per 1 mol of Si in the silicon source raw material. Add to mixed raw materials.

前記金属系触媒の配合量が金属として0.06モル未満
に相当する量比では直径2.0μm以上のSiCウィス
カーを生成させることは困難となる。またこの配合量が
0.3モルを越えると得られるSiCウィスカーの形状
が悪くなる傾向を与える。したがって、配合量の上限は
、0.3モルに設定することが望ましい。
If the amount of the metal catalyst is equivalent to less than 0.06 mole of metal, it will be difficult to produce SiC whiskers with a diameter of 2.0 μm or more. Moreover, if this amount exceeds 0.3 mol, the shape of the resulting SiC whiskers tends to deteriorate. Therefore, it is desirable to set the upper limit of the amount to be 0.3 mol.

金属系触媒は、炭材を混合する前の珪素源原料に予め添
加しておくことが実用的である。添加の方法は、粉体と
して攪拌混合する方法でもよいが、塩化物、硝酸塩のよ
うな化合物を水溶液に珪素源原料を浸漬して乾燥する方
法を採ることが均一分散に有利である。
It is practical to add the metal catalyst in advance to the silicon source material before mixing the carbonaceous material. The addition method may be a method of stirring and mixing in powder form, but it is advantageous for uniform dispersion to adopt a method of immersing the silicon source raw material in an aqueous solution of compounds such as chlorides and nitrates and drying.

珪素源原料、炭材および特定量の金属系触媒を含む原料
成分は、黒鉛のような高耐熱性材料で構成された反応容
器に充填密閉し、周囲をコークス粒ナトのカーボンバッ
キング材で被包した状態で通電加熱される。
The raw material components, including the silicon source material, carbonaceous material, and a specific amount of metal catalyst, are filled into a reaction vessel made of a highly heat-resistant material such as graphite and sealed, and the surrounding area is covered with a carbon backing material made of coke granules. In this state, it is heated by electricity.

この際、加熱処理の条件を、非酸化性雰囲気中で昇温速
度を10℃/■in、以上、反応温度を1550〜18
00”Cに設定することが第2の主要な要件となる。
At this time, the heat treatment conditions were as follows: a temperature increase rate of 10°C/inch or higher in a non-oxidizing atmosphere, and a reaction temperature of 1550 to 18°C.
The second major requirement is to set it to 00''C.

より好適な条件は、昇温速度10〜40℃/win、 
、反応温度1600〜1750℃の範囲にすることであ
る。
More suitable conditions include a temperature increase rate of 10 to 40°C/win;
, the reaction temperature should be in the range of 1600 to 1750°C.

昇温速度を10℃/…in以上にする理由は、これがl
Oo(:/winを下部ると径大のSiCウィスカーを
生成するために寄与しなくなるためである。また、40
’C/minを上部る場合には原料組織中の温度勾配が
大きくなるためか、生成ウィスカー形状に異形化および
バラツキが増大する傾向を招く。
The reason why the temperature increase rate is set to 10℃/...in or more is that
This is because if Oo(:/win is lowered, it will no longer contribute to generating large diameter SiC whiskers. Also, 40
In the case of increasing the C/min, the temperature gradient in the raw material structure increases, which tends to increase the irregular shape and variation in the shape of the generated whiskers.

反応温度を1550〜1800℃の範囲にする理由は、
1550’C未満では生成ウィスカーの径大化が円滑に
進行しなくなる上にSingの残留が多くなり、180
0℃を越える高温域ではウィスカー形状の異形化が増大
するうえにウィスカーの粒状化が始まってショットの混
在が増すからである。
The reason for setting the reaction temperature in the range of 1550 to 1800°C is because
If the temperature is lower than 1550'C, the diameter of the generated whiskers will not increase smoothly, and more Sing will remain.
This is because, in a high temperature range exceeding 0° C., the shape of the whiskers increases and the whiskers begin to become granular, increasing the amount of shots mixed together.

反応後、反応容器中に残留する未反応の炭材成分を焼却
処理によって除去する。
After the reaction, unreacted carbonaceous components remaining in the reaction vessel are removed by incineration.

このようにして得られるSiCウィスカーは、淡緑白色
を呈する格子欠陥のないSiCの針状単結晶で、その形
状は直径2.0μ劇以上で長さ50μmを越える径太で
良アスペクト比を示すものである。
The SiC whiskers obtained in this way are pale green-white, acicular single crystals of SiC without lattice defects, and have a diameter of 2.0 μm or more and a length of more than 50 μm, with a good aspect ratio. It is something.

〔作 用〕[For production]

本発明によれば、金属系触媒の配合条件および原料成分
の加熱処理条件を選択し、これら条件を同時に満足させ
ることによって生成SiCウィスカーの径大化が実現さ
れる。この理由については解明するに至っていないが、
従来技術では生成SiCウィスカーの径大化を意図して
金属系触媒の配合量ならびに加熱温度条件を選定した例
はないから、本発明の作用には選択的な要素がある。
According to the present invention, the diameter of the produced SiC whiskers can be increased by selecting the blending conditions of the metal catalyst and the heat treatment conditions of the raw material components and satisfying these conditions simultaneously. Although the reason for this has not yet been elucidated,
In the prior art, there is no example in which the amount of metal catalyst and the heating temperature conditions are selected with the intention of increasing the diameter of the SiC whiskers produced, so there is a selective element in the action of the present invention.

〔実施例〕〔Example〕

以下、本発明の実施例を比較例と対比しながら説明する
Examples of the present invention will be described below while comparing them with comparative examples.

実施例1 粒度200メツシユ以下のシリカゲルを珪素源原料とし
、該珪素源原料をそのSi1モルに対しCO成分力0.
01〜0.3モルに相当する5水準の配合比に調製した
CoC/!、水溶液中に浸漬し、乾燥させた。
Example 1 Silica gel with a particle size of 200 mesh or less was used as a silicon source raw material, and the silicon source raw material had a CO content of 0.00% per mole of Si.
CoC/! was prepared at five levels of blending ratio corresponding to 0.01 to 0.3 moles. , immersed in an aqueous solution and dried.

このようにして金属触媒を均一に担持させた珪素源原料
に、カーボンブラック炭材110重量%を配合し均一に
攪拌混合した。炭材用のカーボンブラックとしては、D
BP吸油量130 mff1/100g 、よう素吸着
1104mg/gの特性を有するファーネスブラック〔
東海カーボン側型、“SEMST 51” )を用いた
110% by weight of carbon black material was blended into the silicon source material on which the metal catalyst was uniformly supported in this manner, and the mixture was stirred and mixed uniformly. As carbon black for carbonaceous materials, D
Furnace black with BP oil absorption of 130 mff1/100g and iodine adsorption of 1104mg/g.
Tokai Carbon side type, "SEMST 51") was used.

ついで、混合原料を高純度黒鉛製の反応容器に軽く充填
し、上部に黒鉛蓋を付してA「ガス雰囲気に保持された
電気抵抗加熱炉に入れた。この状態で、10’C/1l
in、の昇温速度で反応温度を変え、2時間加熱して反
応させた。
Next, the mixed raw materials were lightly filled into a reaction vessel made of high-purity graphite, a graphite lid was attached to the top, and the mixture was placed in an electric resistance heating furnace maintained in a gas atmosphere.
The reaction temperature was changed at a temperature increase rate of 1.5 in, and the reaction was carried out by heating for 2 hours.

加熱反応後、反応容器から内容物を回収し、大気中で6
00℃の温度に熱処理して残留する炭材成分を焼却除去
した。
After the heating reaction, the contents were collected from the reaction vessel and heated in the atmosphere for 6 hours.
The remaining carbonaceous components were removed by heat treatment at a temperature of 00° C. by incineration.

得られた生成物につきX線回折をおこなったところ、β
−3iCの原子問語jit[2,15人、154人の波
長位置に明確なピークが現出したが、SiO□やCに相
当する回折線は確認されなかった。
When the obtained product was subjected to X-ray diffraction, β
Clear peaks appeared at the wavelength positions of -3iC atomic interrogator jit [2, 15, and 154, but no diffraction lines corresponding to SiO□ or C were confirmed.

表1に、生成した各SiCウィスカーの直径、形状評価
の結果を金属触媒のモル量および反応温度と対比させて
示した。
Table 1 shows the diameter and shape evaluation results of each SiC whisker produced in comparison with the molar amount of metal catalyst and reaction temperature.

表1の結果から、金属系触媒の配合量が0.05未満で
は直径2.0 μm以上のSiCウィスカーを生成させ
ることはできず、また1900℃の反応温度では直径は
太くなるもののウィスカー形状に曲がり、節目等が多く
なる。
From the results in Table 1, SiC whiskers with a diameter of 2.0 μm or more cannot be produced when the amount of metal catalyst is less than 0.05, and at a reaction temperature of 1900°C, although the diameter becomes thicker, the whisker shape remains. There will be more bends, joints, etc.

表 1 実施例2 珪素源原料に粒度200メツシユ以下の珪砂を用い、こ
れに金属系触媒としてFezO=をSi1モル当たりF
eとして0.O1〜0.3モルに相当する5水準の配合
量で添加混合した。その他の条件は実施例1と同一にし
てSiCウィスカーを生成させた。
Table 1 Example 2 Silica sand with a particle size of 200 mesh or less was used as the silicon source raw material, and FezO = was added as a metal catalyst to it at a concentration of F per mole of Si.
0 as e. Five levels of compounding amounts corresponding to 1 to 0.3 moles of O were added and mixed. Other conditions were the same as in Example 1 to generate SiC whiskers.

得られた各SiCウィスカーについて、実施例1と同様
に直径および形状評価をおこない、結果を表2に示した
The diameter and shape of each SiC whisker obtained were evaluated in the same manner as in Example 1, and the results are shown in Table 2.

表2の結果も表1と同一傾向を示し、金属系触媒の配合
量が0.10〜0.30モルで反応温度が1600℃の
条件において最良のSiCウィスカーが得られた。
The results in Table 2 also showed the same tendency as in Table 1, and the best SiC whiskers were obtained under conditions where the amount of metal catalyst was 0.10 to 0.30 mol and the reaction temperature was 1600°C.

表 〔発明の効果〕 〔発明の効果〕 以上のとおり、本発明によれば特定された金属系触媒の
配合条件および反応時の加熱処理条件を適用することに
よって、常に直径2.0μm以上で良好な形状を備える
高品質のSiCウィスカーを収率よく生産することがで
きる。
Table [Effects of the Invention] [Effects of the Invention] As described above, according to the present invention, by applying the specified blending conditions of the metal catalyst and heat treatment conditions during reaction, a diameter of 2.0 μm or more is always achieved. It is possible to produce high-quality SiC whiskers having a shape with a good yield.

したがって、セラミックス材の複合高靭化に有効であり
、人体に対して安全度の高いSiCウィスカーを供給す
ることが可能となる。
Therefore, it is possible to supply SiC whiskers that are effective in increasing the composite toughness of ceramic materials and are highly safe for the human body.

Claims (1)

【特許請求の範囲】 1、珪素源原料と炭材との混合原料を非酸化雰囲気中で
反応温度域に加熱処理してSiCウィスカーを生成させ
る方法において、金属系触媒を珪素源原料中のSi1モ
ルに対し金属として0.06モル以上に相当する配合量
で混合原料に添加し、かつ加熱処理条件を昇温速度10
℃/min.以上、反応温度1550〜1800℃に設
定することを特徴とするSiCウィスカーの製造方法。 2、金属系触媒を、Fe,Co,Ni,Mn,Caおよ
びそれらの酸化物、炭酸塩、硫酸塩、硝酸塩から選択す
る請求項1記載のSiCウィスカーの製造方法。
[Claims] 1. In a method of generating SiC whiskers by heat-treating a mixed raw material of a silicon source raw material and a carbonaceous material to a reaction temperature range in a non-oxidizing atmosphere, a metal catalyst is applied to Si1 in the silicon source raw material. It is added to the mixed raw material in an amount equivalent to 0.06 mole or more of metal per mole, and the heat treatment conditions are set to a heating rate of 10.
°C/min. As described above, the method for producing SiC whiskers is characterized in that the reaction temperature is set at 1550 to 1800°C. 2. The method for producing SiC whiskers according to claim 1, wherein the metal catalyst is selected from Fe, Co, Ni, Mn, Ca, and their oxides, carbonates, sulfates, and nitrates.
JP31961289A 1989-12-08 1989-12-08 Method for manufacturing SiC whiskers Expired - Lifetime JPH0649639B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31961289A JPH0649639B2 (en) 1989-12-08 1989-12-08 Method for manufacturing SiC whiskers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31961289A JPH0649639B2 (en) 1989-12-08 1989-12-08 Method for manufacturing SiC whiskers

Publications (2)

Publication Number Publication Date
JPH03183699A true JPH03183699A (en) 1991-08-09
JPH0649639B2 JPH0649639B2 (en) 1994-06-29

Family

ID=18112223

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31961289A Expired - Lifetime JPH0649639B2 (en) 1989-12-08 1989-12-08 Method for manufacturing SiC whiskers

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Country Link
JP (1) JPH0649639B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109607539B (en) * 2019-01-31 2020-01-24 杭州致德新材料有限公司 High-dispersion nano silicon carbide and preparation method thereof

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