JPH0318335B2 - - Google Patents
Info
- Publication number
- JPH0318335B2 JPH0318335B2 JP57053817A JP5381782A JPH0318335B2 JP H0318335 B2 JPH0318335 B2 JP H0318335B2 JP 57053817 A JP57053817 A JP 57053817A JP 5381782 A JP5381782 A JP 5381782A JP H0318335 B2 JPH0318335 B2 JP H0318335B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- laser
- impurities
- insulating film
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5381782A JPS58171833A (ja) | 1982-04-02 | 1982-04-02 | レ−ザによる配線接続方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5381782A JPS58171833A (ja) | 1982-04-02 | 1982-04-02 | レ−ザによる配線接続方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58171833A JPS58171833A (ja) | 1983-10-08 |
| JPH0318335B2 true JPH0318335B2 (en:Method) | 1991-03-12 |
Family
ID=12953338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5381782A Granted JPS58171833A (ja) | 1982-04-02 | 1982-04-02 | レ−ザによる配線接続方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58171833A (en:Method) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019149513A (ja) * | 2018-02-28 | 2019-09-05 | 新日本無線株式会社 | 抵抗素子を形成するための中間体およびそれを用いた抵抗素子の製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5843906B2 (ja) * | 1979-10-01 | 1983-09-29 | 株式会社日立製作所 | 半導体集積回路とその回路プログラム方法 |
-
1982
- 1982-04-02 JP JP5381782A patent/JPS58171833A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58171833A (ja) | 1983-10-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3436858B2 (ja) | 薄膜太陽電池の製造方法 | |
| JP2625261B2 (ja) | 多材料,多層装置の材料の対象物構造を選択的にレーザ処理するシステム及び方法 | |
| CA1186070A (en) | Laser activated polysilicon connections for redundancy | |
| US6300590B1 (en) | Laser processing | |
| US4404735A (en) | Method for manufacturing a field isolation structure for a semiconductor device | |
| JP2002517902A (ja) | 紫外線レーザ出力による導電性リンクの切断方法 | |
| JPH05218472A (ja) | 薄膜構成体のレーザ加工方法 | |
| JP2728412B2 (ja) | 半導体装置 | |
| US5217921A (en) | Method of photovoltaic device manufacture | |
| JPS6267834A (ja) | レ−ザ処理方法 | |
| CN103038898A (zh) | 用于对半导体基底进行掺杂的方法和具有两级掺杂的太阳能电池 | |
| US20080289683A1 (en) | Thin-Film Solar Cell Interconnection | |
| JPH0318335B2 (en:Method) | ||
| JP2585403B2 (ja) | 太陽電池の製造方法 | |
| JPS6234131B2 (en:Method) | ||
| US5235154A (en) | Laser removal of metal interconnects | |
| JP4078137B2 (ja) | レーザービームのパルス幅の設定方法 | |
| JPH0426219B2 (en:Method) | ||
| JP2524049B2 (ja) | 半導体集積回路およびその製造方法 | |
| JPS59117274A (ja) | 太陽電池の製造方法 | |
| JPH065778B2 (ja) | 光半導体装置の製造方法 | |
| JPS58171834A (ja) | レ−ザによる配線接続方法 | |
| JPS6119102B2 (en:Method) | ||
| JPH0516182B2 (en:Method) | ||
| JPS61108150A (ja) | 半導体装置の製造方法 |