JPH03183044A - Magneto-optical recording medium - Google Patents
Magneto-optical recording mediumInfo
- Publication number
- JPH03183044A JPH03183044A JP31888489A JP31888489A JPH03183044A JP H03183044 A JPH03183044 A JP H03183044A JP 31888489 A JP31888489 A JP 31888489A JP 31888489 A JP31888489 A JP 31888489A JP H03183044 A JPH03183044 A JP H03183044A
- Authority
- JP
- Japan
- Prior art keywords
- magneto
- sio2
- optical recording
- interference layer
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001681 protective effect Effects 0.000 claims abstract description 32
- 239000003989 dielectric material Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052681 coesite Inorganic materials 0.000 abstract description 9
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 9
- 239000000377 silicon dioxide Substances 0.000 abstract description 9
- 229910052682 stishovite Inorganic materials 0.000 abstract description 9
- 229910052905 tridymite Inorganic materials 0.000 abstract description 9
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 8
- 230000007613 environmental effect Effects 0.000 abstract description 7
- 239000011521 glass Substances 0.000 abstract description 5
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 description 13
- 238000004544 sputter deposition Methods 0.000 description 8
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- -1 oxides Chemical class 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔概要〕
本発明は、光磁気記録用媒体に関し、
耐環境性と続出特性とを十分に確保し、同時に続出安定
性を向上させた光磁気記録媒体を提供することを目的と
し、
基板上に光磁気記録膜、保護膜、および干渉層を設けて
成る光磁気記録媒体において、Ｔｂ−ＳｉＯ２から成る
保護膜を有し、屈折率、熱伝導率および熱膨張係数の少
なくとも一つがＴｂ−３ｉ○２よりも大きい誘電体から
成る干渉層を有するように構成する。[Detailed Description of the Invention] [Summary] The present invention relates to a magneto-optical recording medium, and an object of the present invention is to provide a magneto-optical recording medium that sufficiently secures environmental resistance and repeatability characteristics, and at the same time improves repeatability stability. A magneto-optical recording medium comprising a magneto-optical recording film, a protective film and an interference layer on a substrate, which has a protective film made of Tb-SiO2 and has a high refractive index, thermal conductivity and coefficient of thermal expansion. At least one of the interference layers is made of a dielectric material larger than Tb-3i○2.
本発明は、光磁気記録用媒体に関する。 The present invention relates to a magneto-optical recording medium.
光磁気記録媒体は、典型的には光磁気ディスクとして知
られており、ガラス、樹脂等の透明基板上に設けた磁気
光学効果を有する物質の光磁気記録膜にレーデビームを
照射して書込・続出・消去を行う。光磁気記録媒体に必
要な基本的特性として、（１）続出特性：読み出される
信号品質（Ｃ／Ｎ比で代表される）が高いこと、（２）
耐環境性：記録された信号が外界の影響を受けないこと
、および（３）読出安定性二記録された信号が繰り返し
読み出しによって劣化しないことが必要である。A magneto-optical recording medium is typically known as a magneto-optical disk, and is written by irradiating a magneto-optical recording film of a material with a magneto-optic effect on a transparent substrate such as glass or resin with a Radhe beam. Continue adding and erasing. The basic characteristics required for a magneto-optical recording medium are (1) successive characteristics: high readout signal quality (represented by C/N ratio); (2)
Environmental resistance: It is necessary that the recorded signal is not affected by the outside world, and (3) Readout stability: It is necessary that the recorded signal is not deteriorated by repeated reading.
一般に、光磁気記録膜を構成する物質としてはＴｂＦｅ
Ｃｏ５ＤｙＦｅＣｏ、ＧｄＴｂＦｅ等の希土類金属・遷
移金属アモルファス合金が用いられている。この記録膜
が酸化等の外界からの影響によって変質すると記録され
た信号が経時劣化するので、記録膜を外界から保護して
耐環境性を確保する保護膜が設けられている。保護膜と
しては、金属の窒化物、酸化物、硫化物等の誘電体が用
いられている。Generally, the material constituting the magneto-optical recording film is TbFe.
Rare earth metal/transition metal amorphous alloys such as Co5DyFeCo and GdTbFe are used. If this recording film changes in quality due to influences from the outside world such as oxidation, the recorded signals will deteriorate over time, so a protective film is provided to protect the recording film from the outside world and ensure environmental resistance. As the protective film, dielectric materials such as metal nitrides, oxides, and sulfides are used.
また、光磁気記録媒体は書込によって生じた僅かな偏光
面の回転角（０，５°程度）を読み出すため、磁気光学
効果によらない他の光記録媒体や磁気記録媒体に比べて
続出特性（代表的にはＣ／Ｎ比）が劣る。続出特性の改
良策の一つとして、記録膜と透明基板との間に、あるい
は薄い透過性の記録膜の場合には更に記録膜とその背後
の反射膜との間に、高屈折率を有する物質から成る干渉
層を設けることによって回転角を実質的に大きくする（
１°程度）ことが提案されている。干渉層を槽底する物
質としても、窒化物、酸化物、硫化物等が用いられ、同
一物質の層で保護膜および干渉層を兼ねさせることもで
きる。干渉層は干渉が起きる最適厚さに形成される。In addition, since magneto-optical recording media read out the slight rotation angle (about 0.5 degrees) of the polarization plane caused by writing, they have a unique characteristic that is different from other optical and magnetic recording media that do not rely on magneto-optical effects. (Typically, the C/N ratio) is poor. One of the ways to improve this property is to have a high refractive index between the recording film and the transparent substrate, or in the case of a thin transparent recording film, between the recording film and the reflective film behind it. The angle of rotation is substantially increased by providing an interference layer of material (
1°) is proposed. Nitride, oxide, sulfide, etc. are used as the material for forming the interference layer at the bottom of the tank, and a layer of the same material can also serve as a protective film and an interference layer. The interference layer is formed to an optimum thickness for interference to occur.
従来、種々の物質による保護膜および干渉層が提案され
ているが、いずれも十分な読出特性と続出安定性とが同
時に得られないという問題があった。Hitherto, protective films and interference layers made of various materials have been proposed, but they all have the problem of not being able to provide sufficient readout characteristics and continuous output stability at the same time.
本発明は、耐環境性と続出特性とを十分に確保し、同時
に続出安定性を向上させた光磁気記録媒体を提供するこ
とを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a magneto-optical recording medium that has sufficient environmental resistance and continuous printing characteristics, and at the same time has improved continuous printing stability.
上記の目的は、本発明によれば、基板上に光磁気記録膜
、保護膜、および干渉層を設けて成る光磁気記録媒体に
おいて、Ｔｂ−３ｉ○２から成る保護膜を有し、屈折率
、熱伝導率および熱膨張係数の少なくとも一つがＴｂ５
ｉ０２よりも大きい誘電体から戊る干渉層を有すること
を特徴とする光磁気記録媒体によって達成される。According to the present invention, the above object is to provide a magneto-optical recording medium comprising a magneto-optical recording film, a protective film and an interference layer on a substrate, which has a protective film made of Tb-3i○2 and has a refractive index of , at least one of thermal conductivity and thermal expansion coefficient is Tb5
This is achieved by a magneto-optical recording medium characterized by having an interference layer that is cut out of a dielectric material with a diameter larger than i02.
第１図に、保護膜として用いられている各種の誘電体に
ついて、記録膜を外界の影響から保護する保護効果を比
較した結果を示す。本発明の光磁気記録媒体は、同図に
示されるように極めて高い保護効果を有するＴ ｂ −
Ｓ ｉ ０２の保護膜を設けたことにより、耐環境性を
十分に確保する。FIG. 1 shows the results of a comparison of the protective effects of various dielectrics used as protective films in protecting the recording film from the influence of the outside world. As shown in the figure, the magneto-optical recording medium of the present invention has a T b −
By providing the S i 02 protective film, sufficient environmental resistance is ensured.
第１表に、保護膜あるいは干渉層として用いられている
種々の誘電体について熱伝導率、屈折率および熱膨張率
を示す。Table 1 shows the thermal conductivity, refractive index, and coefficient of thermal expansion of various dielectrics used as protective films or interference layers.
以下余白
第１表
Ｔｂ ５１０２は、第１図に示したように極めて優れ
た保護効果を有するが、第１表に示したように熱伝導率
が小さいので続出時に照射されたレーザビームの熱が逃
げ難いため続出安定性が小さい。一方、例えば同表中の
窒化シリコン、窒化アルミニウム等は屈折率が大きいの
で干渉層としては優れているが、Ｔｂ−ＳｉＯ２に比べ
て保護効果が劣り、また−船釣な製膜方法である反応性
スパッタ等によって安定した保護膜として作製するのが
困難である。Table 1 below: Tb 5102 has an extremely excellent protective effect as shown in Figure 1, but as shown in Table 1, it has a low thermal conductivity, so the heat of the laser beam irradiated when it is repeatedly applied is Since it is difficult to escape, the stability of successive attacks is low. On the other hand, for example, silicon nitride, aluminum nitride, etc. in the same table have a large refractive index and are therefore excellent as interference layers, but their protective effect is inferior to that of Tb-SiO2, and they are also It is difficult to produce a stable protective film using natural sputtering or the like.
本発明においては、屈折率、熱伝導率、および／または
熱膨張率がＴｂ−３ｉ○２よりも大きい誘電体の干渉層
を設けたことにより、続出特性を十分に確保しながら続
出安定性を向上させる。In the present invention, by providing a dielectric interference layer with a refractive index, thermal conductivity, and/or coefficient of thermal expansion larger than that of Tb-3i○2, successive stability is achieved while sufficiently ensuring successive characteristics. Improve.
すなわち、熱伝導率がＴｂ ５１０２より大きい誘電
体を干渉層として用いた場合には、続出時のレーデビー
ム照射の熱の放散が促進されるので、繰り返し読み出し
による記録信号の劣化が防止され続出安定性が向上する
。この場合、熱伝導率のみでなく屈折率もＴｂ ５ｔ
０２より大きい誘電体を用いれば、続出安定性のみでな
く続出特性をも向上させることができる。このような誘
電体としては、例えば第１表中の窒化シリコン（Ｓｉ３
Ｎ、）、窒化アルミニウム（Ａｊ！Ｎ＞、窒化硼素（Ｂ
Ｎ）等、あるいは同表中に示していないがＴｂ−窒化シ
リコン等を用いることができる。In other words, when a dielectric material with a thermal conductivity higher than Tb 5102 is used as an interference layer, the heat dissipation of the Radhe beam irradiation during continuous reading is promoted, so deterioration of the recorded signal due to repeated readout is prevented and the continuous reading stability is improved. will improve. In this case, not only the thermal conductivity but also the refractive index is Tb 5t
If a dielectric material larger than 0.02 is used, not only the successive stability but also the successive characteristics can be improved. As such a dielectric material, for example, silicon nitride (Si3
), aluminum nitride (Aj!N>, boron nitride (B
Although not shown in the table, Tb-silicon nitride, etc. can be used.
また、熱膨張率がＴｂ−３ｉ○２よりも大きい誘電体を
干渉層として用いた場合には、スパッタ製膜時の温度と
室温との温度差により記録膜中に応力が発生し、これに
より記録膜の磁気異方性が大きくなる結果、記録されて
いる信号の劣化が抑制され、続出安定性が向上する。こ
のような誘電体としては、第１表中の殆どのものが該当
するが、特に熱膨張率の大きい誘電体として酸化アルミ
ニウム（，１２０３）、酸化マグネシウム（ＭｇＯ）、
−酸化シリコン（Ｓｉｎ）等が望ましく、熱膨張率のみ
でなく屈折率もＴｂ−３ｉ○２より大きい酸化ジルコニ
ウム（Ｚｒ○、）、酸化チタン（ＴｉＯ□）等が更に望
ましい。In addition, when a dielectric material with a coefficient of thermal expansion larger than Tb-3i○2 is used as an interference layer, stress is generated in the recording film due to the temperature difference between the temperature during sputtering and room temperature. As a result of increasing the magnetic anisotropy of the recording film, deterioration of recorded signals is suppressed and successive stability is improved. Most of the dielectrics listed in Table 1 apply to such dielectrics, but dielectrics with particularly high coefficients of thermal expansion include aluminum oxide (1203), magnesium oxide (MgO),
-Silicon oxide (Sin) is preferable, and zirconium oxide (Zr◯), titanium oxide (TiO□), etc., which have not only a coefficient of thermal expansion but also a refractive index greater than Tb-3i□2, are more preferable.
更に、本発明の干渉層として用いる誘電体としては、熱
伝導率、屈折率、および熱膨張率の全てがＴｂ５ｘ０２
よりもかなり大きい窒化シリコン（ｓ １３Ｎ４） 、
窒化アルミニウム（ＡｆＮ）、窒化硼素（ＢＮ）等の窒
化物、酸化チタン（ＴｉＯ２）等の酸化物等が特に望ま
しい。Furthermore, the dielectric used as the interference layer of the present invention has thermal conductivity, refractive index, and thermal expansion coefficient of Tb5x02.
Silicon nitride (S13N4), which is significantly larger than
Particularly desirable are nitrides such as aluminum nitride (AfN) and boron nitride (BN), and oxides such as titanium oxide (TiO2).
また、本発明の光磁気記録媒体は、典型的には基板上に
干渉層、その上に記録膜、その上にＴｂ−３ｉ○２保護
膜を形成した膜構成を有するが、基板と干渉層との間に
もＴｂ−３ｉ○２の保護膜を設けることにより、保護効
果が一層向上する。Further, the magneto-optical recording medium of the present invention typically has a film structure in which an interference layer is formed on a substrate, a recording film is formed thereon, and a Tb-3i○2 protective film is formed thereon. By providing a protective film of Tb-3i○2 also between the two, the protective effect is further improved.
以下に実施例により本発明をより詳しく説明する。The present invention will be explained in more detail with reference to Examples below.
〔実施例１〕
第２図に示す膜構成の本発明に従った光磁気ディスクを
作製した。[Example 1] A magneto-optical disk according to the present invention having a film structure shown in FIG. 2 was manufactured.
ガラス基板１１上に、窒化シリコンの干渉層１２ （厚
さ９０ｎｍ）、その上にＤｙ２６Ｆｅ５９Ｃ０１５アモ
ルファス合金の光磁気記録膜１３（厚さ９０ｎｍ）、そ
の上にＴ ｂ −Ｓ ｔ ０２の保護膜１４（厚さ９０
ｎｍ）を何れもスパッタによって形成した。On a glass substrate 11, an interference layer 12 (thickness: 90 nm) of silicon nitride, a magneto-optical recording film 13 (thickness: 90 nm) made of Dy26Fe59C015 amorphous alloy, and a protective film 14 (thickness: 90 nm) made of T b -S t 02 are formed on it. Thickness 90
nm) were formed by sputtering.
作製した光磁気ディスクに、線速１０ｍ、ビット長１μ
ｍで信号を記録し、Ｃ／Ｎ比５０ｄＢを得た。The fabricated magneto-optical disk had a linear velocity of 10m and a bit length of 1μ.
The signal was recorded at m and a C/N ratio of 50 dB was obtained.
また、記録したビット（ビット長１μｍ）にレーザビー
ムを照射し、信号の劣化を測定したところ、しきい値パ
ワー（信号を記録できる最小のレーザパワー）の５０％
まで信号の劣化が認められなかった。In addition, when we irradiated the recorded bits (bit length 1 μm) with a laser beam and measured the signal degradation, we found that 50% of the threshold power (minimum laser power that can record a signal)
No signal deterioration was observed until then.
〔実施例２〕
第３図に示す膜構成の本発明に従った光磁気ディスクを
作製した。[Example 2] A magneto-optical disk according to the present invention having the film structure shown in FIG. 3 was manufactured.
ポリカーボネート基板２１上に、Ｔｂ−３ｉ○２の保護
膜２２ （厚さ２０ｎｍ）、その上に窒化シリコンの干
渉層２３ （厚さ７０ ｎｍ） 、その上にＴｂ２０Ｆ
ｅ７２Ｃｏ８アモルファス合金の光磁気記録膜２４ （
厚さ９０ｎｍ）、その上にＴｂ５１０２の保護膜２５〈
厚さ９０ｎｍ）を何れもスパッタによって形成した。A protective film 22 of Tb-3i○2 (thickness 20 nm) is placed on a polycarbonate substrate 21, an interference layer 23 of silicon nitride (thickness 70 nm) is placed on top of that, and a Tb20F film is placed on top of that.
Magneto-optical recording film 24 of e72Co8 amorphous alloy (
90 nm thick), and a protective film 25 of Tb5102 is placed on top of it.
A thickness of 90 nm) was formed by sputtering.
作製した光磁気ディスクに、線速１０ｍ１ビツト長１μ
ｍで信号を記録し、Ｃ／Ｎ比５１ｄＢを得た。The fabricated magneto-optical disk had a linear velocity of 10 m and a bit length of 1 μ.
The signal was recorded at m, and a C/N ratio of 51 dB was obtained.
また、記録したビット（ビット長１μｍ〉にレーザビー
ムを照射し、信号の劣化を測定したところ、しきい値パ
ワーの５５％まで信号の劣化が認められなかった。Furthermore, when the recorded bits (bit length 1 μm) were irradiated with a laser beam and signal deterioration was measured, no signal deterioration was observed up to 55% of the threshold power.
〔実施例３〕
第４図に示す膜構成の本発明に従った光磁気ディスクを
作製した。[Example 3] A magneto-optical disk according to the present invention having the film structure shown in FIG. 4 was manufactured.
ガラス基板３１上に、酸化ジルコニウムの干渉層３２
（厚さ７０ｎｍ）、その上にＤｙ２５Ｆｅ６０Ｃｏ １
５アモルファス合金の光磁気記録膜３３（厚さ９０ｎｍ
）、その上にＴｂ ５ｔ０２の保護膜３４ （厚さ９
０ｎｍ）を何れもスパッタによって形成した。An interference layer 32 of zirconium oxide is formed on a glass substrate 31.
(thickness 70 nm), with Dy25Fe60Co 1
5 Amorphous alloy magneto-optical recording film 33 (thickness: 90 nm)
), and a protective film 34 of Tb 5t02 (thickness 9
0 nm) were formed by sputtering.
作製した光磁気ディスクに、線速１０ｍ、ビット長１μ
ｍで信号を記録し、Ｃ／Ｎ比５０ｄＢを得た。The fabricated magneto-optical disk had a linear velocity of 10m and a bit length of 1μ.
The signal was recorded at m and a C/N ratio of 50 dB was obtained.
記録膜の磁気異方性が６０％大きくなった。The magnetic anisotropy of the recording film increased by 60%.
また、記録したビット （ビット長１μｍ）にレーザビ
ームを照射し、信号の劣化を測定したところ、しきい値
パワーの６０％まで信号の劣化が認められなかった。Furthermore, when the recorded bits (bit length 1 μm) were irradiated with a laser beam and signal deterioration was measured, no signal deterioration was observed up to 60% of the threshold power.
〔実施例４〕
第５図に示す膜構成の本発明に従った光磁気ディスクを
作製した。[Example 4] A magneto-optical disk according to the present invention having a film structure shown in FIG. 5 was manufactured.
ガラス基板４１上に、Ｔｂ−３ｉ○２の保護膜４２ （
厚さ２０ｎｍ）、その上に酸化アルミニウムの干渉層４
３ （厚さ７０ｎｍ）、その上にＴｂ２０Ｆｅ７２Ｃｏ
８アモルファス合金の光磁気記録膜４４ （厚さ９０ｎ
ｍ）、その上にＴｂ−３ｉ○２の保護膜４５ （厚さ９
０ｎｍ）を何れもスパッタによって形成した。A protective film 42 of Tb-3i○2 (
20 nm thick), on which is an interference layer 4 of aluminum oxide.
3 (thickness 70 nm), and Tb20Fe72Co
8 amorphous alloy magneto-optical recording film 44 (thickness 90n
m), and a protective film 45 of Tb-3i○2 (thickness 9
0 nm) were formed by sputtering.
作製した光磁気ディスクに、線速１０ｍ１ビツト長１μ
ｍで信号を記録し、Ｃ／Ｎ比５１ｄＢを得た。The fabricated magneto-optical disk had a linear velocity of 10 m and a bit length of 1 μ.
The signal was recorded at m, and a C/N ratio of 51 dB was obtained.
記録膜の磁気異方性が５０％大きくなった。The magnetic anisotropy of the recording film increased by 50%.
また、記録したビット（ビット長１μｍ）にレーデビー
ムを照射し、信号の劣化を測定したところ、しきい値パ
ワーの５５％まで信号の劣化が認められなかった。Furthermore, when the recorded bits (bit length 1 μm) were irradiated with a Radhe beam and signal deterioration was measured, no signal deterioration was observed up to 55% of the threshold power.
〔比較例１〕
第６図に示す膜構成の従来の光磁気ディスクを作製した
。[Comparative Example 1] A conventional magneto-optical disk having the film configuration shown in FIG. 6 was manufactured.
ガラス基板５１上に、Ｔｂ−３ｉ○２の干渉層５２ （
厚さ９０ｎｍ）、その上にＤｙ２６Ｆｅ５９Ｃ○１５ア
モルファス合金の光磁気記録膜５３（厚さ９０ｎｍ）、
その上にＴｂ ＳｉＯ２の保護膜５４ （厚さ９０ｎ
ｍ）を何れもスパッタによって形成した。On the glass substrate 51, an interference layer 52 of Tb-3i○2 (
90 nm thick), on which a magneto-optical recording film 53 of Dy26Fe59C○15 amorphous alloy (90 nm thick),
On top of that, a protective film 54 of Tb SiO2 (thickness 90n
m) were all formed by sputtering.
作製した光磁気ディスクに、線速１０ｍ１ビツト長１μ
ｍで信号を記録し、Ｃ／Ｎ比４８ｄＢを得た。The fabricated magneto-optical disk had a linear velocity of 10 m and a bit length of 1 μ.
The signal was recorded at m, and a C/N ratio of 48 dB was obtained.
また、記録したビット（ビット長１μｍ〉にレーザビー
ムを照射し、信号の劣化を測定したところ、しきい値パ
ワーの３０％で信号の劣化カ月忍められた。Furthermore, when the recorded bits (bit length 1 μm) were irradiated with a laser beam and signal deterioration was measured, signal deterioration could be tolerated for a month at 30% of the threshold power.
〔比較例２〕
第７図に示す膜構成の従来の光磁気ディスクを作製した
。[Comparative Example 2] A conventional magneto-optical disk having the film configuration shown in FIG. 7 was manufactured.
ポリカーボネート基板６１上に、Ｔｂ−３ｉ○２の干渉
層６２ （厚さ９０ｎｍ）、その上にＴｂ２０Ｆｅ７２
Ｃｏ８アモルファス合金の光磁気記録膜６３（厚さ９０
ｎｍ）、その上にＴｂ−３ｉ○２の保護膜６４ （厚さ
９０ｎｍ）を何れもスパッタによって形成した。An interference layer 62 (thickness 90 nm) of Tb-3i○2 is placed on a polycarbonate substrate 61, and a Tb20Fe72 layer is placed on top of that.
Co8 amorphous alloy magneto-optical recording film 63 (thickness 90
nm), and a protective film 64 (thickness: 90 nm) of Tb-3i○2 was formed thereon by sputtering.
作製した光磁気ディスクに、線速１０ｍ、ビット長１μ
ｍで信号を記録し、Ｃ／Ｎ比４９ｄＢを得た。The fabricated magneto-optical disk had a linear velocity of 10m and a bit length of 1μ.
The signal was recorded at m, and a C/N ratio of 49 dB was obtained.
また、記録したビット（ビット長１μｍ）にレーザビー
ムを照射し、信号の劣化を測定したところ、しきい値パ
ワーの４０％で信号の劣化が認められた。Furthermore, when the recorded bits (bit length 1 μm) were irradiated with a laser beam and signal deterioration was measured, signal deterioration was observed at 40% of the threshold power.
以上説明したように、本発明によれば、光磁気記録媒体
の耐環境性と続出特性とを十分に確保し、同時に続出安
定性を著しく向上させることができる。更に、干渉層と
して屈折率も大きい誘電体を用いることによって、続出
安定性のみでなく続出特性をも大幅に向上させることが
できる。As explained above, according to the present invention, it is possible to sufficiently ensure the environmental resistance and continuous printing characteristics of the magneto-optical recording medium, and at the same time, significantly improve the continuous printing stability. Furthermore, by using a dielectric material with a large refractive index as the interference layer, not only the successive stability but also the successive characteristics can be significantly improved.
第１図は、各種誘電体の保護効果を比較して示すグラフ
、
第２図〜第５図は、それぞれ本発明に従った光磁気ディ
スクの膜構成を示す断面図、および第６図および第７図
は、それぞれ従来の光磁気ディスクの膜構成を示す断面
図である。
１１．２１．３１．４１．５１．６１・・・基板、１２
．２３，３２，４３．５２．６２・・・干渉層、１３．
２４，３３，４４．５３．６３・・・記録膜、１４．２
２．２５．３４．４２，４５．５４．６４・・・保護膜
。FIG. 1 is a graph comparing the protective effects of various dielectric materials, FIGS. 2 to 5 are cross-sectional views showing the film structure of a magneto-optical disk according to the present invention, and FIGS. FIG. 7 is a cross-sectional view showing the film structure of a conventional magneto-optical disk. 11.21.31.41.51.61...Substrate, 12
．． 23, 32, 43.52.62... interference layer, 13.
24,33,44.53.63...Recording film, 14.2
2.25.34.42, 45.54.64...Protective film.
Claims (1)
けて成る光磁気記録媒体において、Ｔｂ−ＳｉＯ＿２か
ら成る保護膜を有し、屈折率、熱伝導率および熱膨張係
数の少なくとも一つがＴｂ−ＳｉＯ＿２よりも大きい誘
電体から成る干渉層を有することを特徴とする光磁気記
録媒体。1. A magneto-optical recording medium comprising a magneto-optical recording film, a protective film, and an interference layer on a substrate, which has a protective film made of Tb-SiO_2 and has at least one of refractive index, thermal conductivity, and coefficient of thermal expansion. 1. A magneto-optical recording medium comprising an interference layer made of a dielectric material whose diameter is larger than Tb-SiO_2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31888489A JPH03183044A (en) | 1989-12-11 | 1989-12-11 | Magneto-optical recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31888489A JPH03183044A (en) | 1989-12-11 | 1989-12-11 | Magneto-optical recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03183044A true JPH03183044A (en) | 1991-08-09 |
Family
ID=18104041
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31888489A Pending JPH03183044A (en) | 1989-12-11 | 1989-12-11 | Magneto-optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03183044A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6802073B1 (en) * | 1999-06-11 | 2004-10-05 | Tosoh Corporation | Magneto-optical recording medium |
-
1989
- 1989-12-11 JP JP31888489A patent/JPH03183044A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6802073B1 (en) * | 1999-06-11 | 2004-10-05 | Tosoh Corporation | Magneto-optical recording medium |
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