JPH02179947A - Magneto-optical recording medium - Google Patents

Magneto-optical recording medium

Info

Publication number
JPH02179947A
JPH02179947A JP19889A JP19889A JPH02179947A JP H02179947 A JPH02179947 A JP H02179947A JP 19889 A JP19889 A JP 19889A JP 19889 A JP19889 A JP 19889A JP H02179947 A JPH02179947 A JP H02179947A
Authority
JP
Japan
Prior art keywords
protective layer
layer
formed
film
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19889A
Inventor
Yujiro Kaneko
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP19889A priority Critical patent/JPH02179947A/en
Publication of JPH02179947A publication Critical patent/JPH02179947A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To provide enough protection against oxygen and water and to obtain long life by successively forming a first protective layer, a recording layer comprising amorphous magnetic alloy film, a second protective layer and a cover layer on a substrate and constituting the first protective layer of SiN film and the second protective layer of SiBN film.
CONSTITUTION: The first protective layer 2, recording layer 3, second protective layer 4 and the cover layer 5 are successively formed on the substrate 1 comprising glass or plastics having high transparency to laser light, small double diffraction and good optical properties. The first protective layer 2 consists of SiN film having diffraction index (n) of 2.1 - 2.4, formed by sputtering, vapor deposition, or ion plating method to be 500 - 1,000Å thick, more preferably 600 - 900Å. The second protective layer 4 consists of SiBN, formed by sputtering to 500 - 2,000Å thick, more preferably 600 - 1,200Å. By this method, the medium is protected from oxygen and water entering from air through the cover layer, which results in long life of the medium.
COPYRIGHT: (C)1990,JPO&Japio
JP19889A 1989-01-04 1989-01-04 Magneto-optical recording medium Pending JPH02179947A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19889A JPH02179947A (en) 1989-01-04 1989-01-04 Magneto-optical recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19889A JPH02179947A (en) 1989-01-04 1989-01-04 Magneto-optical recording medium

Publications (1)

Publication Number Publication Date
JPH02179947A true JPH02179947A (en) 1990-07-12

Family

ID=11467289

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19889A Pending JPH02179947A (en) 1989-01-04 1989-01-04 Magneto-optical recording medium

Country Status (1)

Country Link
JP (1) JPH02179947A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1017108A2 (en) * 1998-12-25 2000-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor devices and methods of manufacturing the same
US6891236B1 (en) 1999-01-14 2005-05-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62293536A (en) * 1986-06-13 1987-12-21 Hitachi Ltd Magneto-optical disk

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62293536A (en) * 1986-06-13 1987-12-21 Hitachi Ltd Magneto-optical disk

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1017108A2 (en) * 1998-12-25 2000-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor devices and methods of manufacturing the same
EP1017108A3 (en) * 1998-12-25 2001-01-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor devices and methods of manufacturing the same
US6891236B1 (en) 1999-01-14 2005-05-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US7491655B2 (en) 1999-01-14 2009-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same

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