JPH03182397A - Ic card - Google Patents

Ic card

Info

Publication number
JPH03182397A
JPH03182397A JP1321890A JP32189089A JPH03182397A JP H03182397 A JPH03182397 A JP H03182397A JP 1321890 A JP1321890 A JP 1321890A JP 32189089 A JP32189089 A JP 32189089A JP H03182397 A JPH03182397 A JP H03182397A
Authority
JP
Japan
Prior art keywords
card
semiconductor element
metal panel
package
heat conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1321890A
Other languages
Japanese (ja)
Inventor
Takayuki Shinohara
篠原 隆幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1321890A priority Critical patent/JPH03182397A/en
Publication of JPH03182397A publication Critical patent/JPH03182397A/en
Pending legal-status Critical Current

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  • Credit Cards Or The Like (AREA)

Abstract

PURPOSE:To obtain an IC card capable of suppressing the rise of internal temp. by efficiently conducting the heat generated by the power loss of a semiconductor element at the time of operation to a metal panel to radiate the same to the open air from the surface of the metal panel by filling the gap between the surface of the package of the semiconductor element and the exterior metal panel with a heat conductivity substance. CONSTITUTION:The heat generated by the power loss of a semiconductor element 1 at the time of the operation of an IC card is conducted to a metal panel 4 from a semiconductor chip through the surface of the package 1a of the semiconductor element 1 and a high heat conductivity substance 5 and radiated to the open air from the surface of the metal panel 4. When the heat conductivity of the high heat conductivity substance 5 is higher than that of air, the heat generated from the semiconductor element 1 is almost diffused from the surface of the metal panel 4 through the surface of the package 1a of the semiconductor element 1 and the high heat conductivity substance 5 and the temp. rise of the air in the IC card is suppressed.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体素子を内蔵するICカードの、動作
特電力損失によるICカード内部温度上昇防止に関する
ものである。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to prevention of temperature rise inside an IC card that incorporates a semiconductor element due to operating specific power loss.

〔従来の技術」 第2図は従来のICカードを示す断面図であり、図に分
いて(1)は半導体素子、(1B)はパッケージ(lb
)はリード、(2)は半導体素子(1)を実装する配線
基板、(3)は配線基板(2)を固定する樹脂成形フレ
ーム、(4)は國脂威形フレーム(3)に接着された金
属パネルであろう 次に従来のICカードの動作時の内部熱伝導について説
明する。動作時に半導体素子(1)の電力損失により発
する熱の、ICカード外部大気への放熱ルートには、主
として次の2つのルートがある。
[Prior Art] Figure 2 is a cross-sectional view showing a conventional IC card. In the figure, (1) is the semiconductor element, and (1B) is the package (lb.
) is the lead, (2) is the wiring board on which the semiconductor element (1) is mounted, (3) is the resin molded frame that fixes the wiring board (2), and (4) is glued to the Japanese resin molded frame (3). Next, internal heat conduction during operation of a conventional IC card will be explained. There are mainly two routes for dissipating heat generated by power loss of the semiconductor element (1) during operation to the atmosphere outside the IC card.

1つは半導体チップから半導体素子(1)のパッケージ
(18)の表面を経て、ICカード内の空気を介して金
属パネル(4)の表面から外部大気へ放散されるN−ト
であり、もう1つは、半導体チップから半導体素子(1
)のリード(1b)を通して配M基板伐)へ熱伝導され
た後、!!!i!線基板(2)の表面からICカード内
空気を介して金属バネA/(4)の表面から外部大気へ
放散されるルートである。
One is N-t, which is emitted from the semiconductor chip through the surface of the package (18) of the semiconductor element (1), through the air inside the IC card, and from the surface of the metal panel (4) to the outside atmosphere. One is to transfer the semiconductor chip to the semiconductor element (1
) through the lead (1b) to the MMC board ( ), then! ! ! i! This is the route through which the air is dissipated from the surface of the wire board (2) through the air inside the IC card, and from the surface of the metal spring A/(4) to the outside atmosphere.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

従来のICカードは以上のように構成されているので、
動作時の発熱源である半導体素子から金属パネル筐での
放熱ルートの途中に、カード内部空気を介しての熱伝導
が介在するので、ICカード内部の温度が上昇し、IC
カード外部大気温度によっては、ICカード内の回路素
子、及び機構部品の定格温度層くまで温度が上昇するな
どの問題点があった。
Conventional IC cards are configured as described above, so
Since heat conduction occurs through the air inside the card during the heat dissipation route from the semiconductor element, which is the heat source during operation, to the metal panel housing, the temperature inside the IC card increases and the IC card
Depending on the atmospheric temperature outside the card, there is a problem in that the temperature of the circuit elements and mechanical parts inside the IC card rises below the rated temperature.

この発明は上記のような問題点を解消するためになされ
たもので、ICカード動作時の、半導体素子の電力損失
による発熱を効率よく金属バネ〜へ伝導し、金属パネル
表面から外部大気へ放熱することにより、内部温度上昇
を抑制することのできるICカードを得ることを目的と
する。
This invention was made to solve the above-mentioned problems, and it efficiently conducts the heat generated by the power loss of the semiconductor element during IC card operation to the metal spring, and radiates the heat from the surface of the metal panel to the outside atmosphere. The object of the present invention is to obtain an IC card that can suppress internal temperature rise.

C課頭金解決するための手段ノ この発明に係るICカードは、ICカード内の半導体素
子のパッケージ表面とカード外装の金属パネルとの間の
間隙を、高熱伝導率物質で充填したものである。
C Means for Solving Charges The IC card according to the present invention is one in which the gap between the package surface of the semiconductor element in the IC card and the metal panel of the card exterior is filled with a high thermal conductivity material.

〔作用J この発明に卦けるICカードは、動作時に半導体素子の
電力損失により発する熱を、半導体素子のパッケージ表
面とICカード外装の金属パネルとの間に充填した高熱
伝4率物質を通して効率よ〈金属パネルへ伝導し、金属
パネル表面から外部大気へ熱を放散し、ICカード内部
の温度上昇を抑制する。
[Function J] The IC card according to the present invention efficiently dissipates heat generated due to power loss of the semiconductor element during operation through a high heat conductivity material filled between the package surface of the semiconductor element and the metal panel of the IC card exterior. <Heat is conducted to the metal panel, dissipates heat from the metal panel surface to the outside atmosphere, and suppresses the temperature rise inside the IC card.

(実施例J 以下、この発明の一実施例を図について説明するっ第1
図はICカードを示す断面図である。図において、(1
) 、  (la)、  (lb)、 (2)〜(41
は第2図の従来例に示したものと同等であるので説明を
省略する。(5)は金塊パネル(4)と半導体素子(1
)のパッケージ(1a)表面とを接着する接着剤や接着
シートなどの高熱伝導率物質である。
(Embodiment J Hereinafter, one embodiment of the present invention will be explained with reference to the drawings.
The figure is a sectional view showing an IC card. In the figure, (1
), (la), (lb), (2) ~ (41
is the same as that shown in the conventional example shown in FIG. 2, so its explanation will be omitted. (5) is a gold nugget panel (4) and a semiconductor element (1
) is a high thermal conductivity material such as an adhesive or an adhesive sheet that adheres to the surface of the package (1a).

次に工Cカードの動作時のカード内部熱伝4について説
明する。ICカード動作時、半導体素子(1)の電力損
失により発する熱は、半導体チップから半導体素子(1
)のパッケージ(la )の表面を経て高熱伝4″4A
物寅(5)を介して金属パネル(4)に伝導し、金属パ
ネル(4)の表面から外部大気へ放散される。
Next, the heat transfer 4 inside the card during operation of the engineering C card will be explained. During IC card operation, heat generated due to power loss in the semiconductor element (1) is transferred from the semiconductor chip to the semiconductor element (1).
) High heat transfer through the surface of the package (la) 4″4A
It is conducted to the metal panel (4) through the material (5) and is dissipated from the surface of the metal panel (4) to the outside atmosphere.

半導体チップからの#!は、一部半導体素子(1)のリ
ード(lb)を通して配線基板(2)へ伝導され、配線
基板(2)の表面からICカード内内空を介して金属パ
ネル(4)の表面から外部大気へ放散されるが、高熱伝
導率物質(5)の熱伝導率が、空気に比べて1分に高け
れば、半導体素子(1)からの発熱はほとんど半導体素
子(1)のパッケージ(la)表面から高熱伝導率物質
(5)を介してICカード外装の金属パネル(4)の表
面から放散され、ICカード内部空気の温度上昇は抑制
される。
# from semiconductor chips! A portion of this is conducted to the wiring board (2) through the leads (lb) of the semiconductor element (1), and from the surface of the metal panel (4) through the inner space of the IC card from the surface of the wiring board (2) to the external atmosphere. However, if the thermal conductivity of the high thermal conductivity material (5) is higher than that of air per minute, most of the heat generated from the semiconductor element (1) will be dissipated to the surface of the package (la) of the semiconductor element (1). The heat is radiated from the surface of the metal panel (4) of the IC card exterior through the high thermal conductivity material (5), and the temperature rise of the air inside the IC card is suppressed.

なか、上記実施例では金属パネル(4)を、K熱伝導率
物質(5)で、半導体素子(1)のパッケージ(1日)
の表面に接着するものを示したが、ICカード内部空間
全体に高熱伝導率物質(5)を充填しても金属パネル(
4)から高い熱放散効果が得られ上記実施例と同様の効
果が得られる。
Among them, in the above embodiment, the metal panel (4) is made of K thermal conductive material (5), and the semiconductor element (1) is packaged (1 day).
The metal panel (
4), a high heat dissipation effect can be obtained, and the same effect as in the above embodiment can be obtained.

「発明の効果] 以上のように、この発明によれば、ICカード内部の半
導体素子とカード外装の金属パネルとの間の間隙を、高
熱@44A物質で充填したので、動作時の半導体素子の
電力損失による発熱を効率よ〈金嘱パネル表面から放散
することができ、ICカード内部の温度上昇を抑制する
効果があるっ
[Effects of the Invention] As described above, according to the present invention, the gap between the semiconductor element inside the IC card and the metal panel of the card exterior is filled with a high-heat @44A substance, so that the semiconductor element during operation is Heat generated by power loss can be efficiently dissipated from the surface of the metal panel, which has the effect of suppressing the temperature rise inside the IC card.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの@明の一実施例によるICカードを示す断
面図、第2図は従来のICカードを示す断面図であるう 図中、(1)?′i半導体素子、(la)はパッケージ
、(Ib)はリード、(2)は配線基板、(3)は樹脂
成形フレーム、(4)は金属パネル、(5)は高熱伝4
率物質である。 なか、図中、同一符号は同一、又は相当部分を示す。
Fig. 1 is a sectional view showing an IC card according to an embodiment of this @ Ming, and Fig. 2 is a sectional view showing a conventional IC card. 'i Semiconductor element, (la) is package, (Ib) is lead, (2) is wiring board, (3) is resin molded frame, (4) is metal panel, (5) is high heat transfer 4
It is a rate substance. In the figures, the same reference numerals indicate the same or corresponding parts.

Claims (1)

【特許請求の範囲】[Claims]  半導体素子、その他の回路素子、及び外部機器との電
気的接続を得る為のコネクタを実装した配線基板と、該
配線基板を固定する樹脂成形フレームと、該フレームに
接着される金属パネルとから構成されるICカードにお
いて、上記半導体素子と上記金属パネルとの間隙を高熱
伝導率物質で充填したことを特徴とするICカード。
Consists of a wiring board mounted with semiconductor elements, other circuit elements, and connectors for electrical connection with external equipment, a resin molded frame that fixes the wiring board, and a metal panel adhered to the frame. 1. An IC card characterized in that a gap between the semiconductor element and the metal panel is filled with a material having high thermal conductivity.
JP1321890A 1989-12-12 1989-12-12 Ic card Pending JPH03182397A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1321890A JPH03182397A (en) 1989-12-12 1989-12-12 Ic card

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1321890A JPH03182397A (en) 1989-12-12 1989-12-12 Ic card

Publications (1)

Publication Number Publication Date
JPH03182397A true JPH03182397A (en) 1991-08-08

Family

ID=18137543

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1321890A Pending JPH03182397A (en) 1989-12-12 1989-12-12 Ic card

Country Status (1)

Country Link
JP (1) JPH03182397A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5508885A (en) * 1993-04-26 1996-04-16 Mitsubishi Denki Kabushiki Kaisha IC card having improved heat dissipation
JPH09226280A (en) * 1996-02-22 1997-09-02 Shinko Electric Ind Co Ltd Card module
JPH09231336A (en) * 1995-12-20 1997-09-05 Pfu Ltd Card-form circuit module
US5923084A (en) * 1995-06-06 1999-07-13 Seiko Epson Corporation Semiconductor device for heat discharge
US6771509B2 (en) 1992-05-20 2004-08-03 Seiko Epson Corporation Cartridge for electronic devices
JP2017191487A (en) * 2016-04-14 2017-10-19 キヤノン株式会社 Slot device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61166195A (en) * 1985-01-18 1986-07-26 凸版印刷株式会社 Ic module
JPS62167097A (en) * 1986-01-21 1987-07-23 セイコーエプソン株式会社 Integrated circuit card
JPH01117049A (en) * 1987-10-30 1989-05-09 Hitachi Ltd Integrated circuit element cooling device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61166195A (en) * 1985-01-18 1986-07-26 凸版印刷株式会社 Ic module
JPS62167097A (en) * 1986-01-21 1987-07-23 セイコーエプソン株式会社 Integrated circuit card
JPH01117049A (en) * 1987-10-30 1989-05-09 Hitachi Ltd Integrated circuit element cooling device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6771509B2 (en) 1992-05-20 2004-08-03 Seiko Epson Corporation Cartridge for electronic devices
US5508885A (en) * 1993-04-26 1996-04-16 Mitsubishi Denki Kabushiki Kaisha IC card having improved heat dissipation
US5923084A (en) * 1995-06-06 1999-07-13 Seiko Epson Corporation Semiconductor device for heat discharge
JPH09231336A (en) * 1995-12-20 1997-09-05 Pfu Ltd Card-form circuit module
JPH09226280A (en) * 1996-02-22 1997-09-02 Shinko Electric Ind Co Ltd Card module
JP2017191487A (en) * 2016-04-14 2017-10-19 キヤノン株式会社 Slot device

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