JPH031822B2 - - Google Patents
Info
- Publication number
- JPH031822B2 JPH031822B2 JP59234767A JP23476784A JPH031822B2 JP H031822 B2 JPH031822 B2 JP H031822B2 JP 59234767 A JP59234767 A JP 59234767A JP 23476784 A JP23476784 A JP 23476784A JP H031822 B2 JPH031822 B2 JP H031822B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- predetermined pattern
- photosensitive resin
- light
- photomask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011347 resin Substances 0.000 claims description 21
- 229920005989 resin Polymers 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 12
- 239000004020 conductor Substances 0.000 description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、感光性樹脂のパターンを形成する
たちの方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] This invention relates to a method for forming a pattern of photosensitive resin.
〔従来の技術〕
近年における電子デバイスの発達には目ざまし
いものがある。LSIなどはその代表的な例であ
り、素子を高密度に形成するためのパターン微細
化技術が必要とされている。[Prior Art] The development of electronic devices in recent years has been remarkable. LSI is a typical example, and pattern miniaturization technology is required to form devices at high density.
例えば、露光方法については、波長および波長
分布が微笑パターンの形成に適した光、例えばレ
ーザー、電子線、Ｘ線などを用いて露光するのが
好ましく、かかる方面での試みも多くなされてい
る。 For example, as for the exposure method, it is preferable to use light whose wavelength and wavelength distribution are suitable for forming a smiling pattern, such as laser, electron beam, and X-ray, and many attempts have been made in this direction.
一方、イメージセンサ、サーマルヘツド、プリ
ント基板や液晶デイスプレーなどのようにパター
ンの微細化をしつつ、大型のデバイスを作る技術
も現在では必要になつてきている。このようなデ
バイスを作るためには多くの点について検討する
必要がある。 On the other hand, there is now a need for technology to create larger devices with finer patterns, such as image sensors, thermal heads, printed circuit boards, and liquid crystal displays. Creating such a device requires consideration of many points.
例えば、エツチング方法については、大型基板
において均一にエツチングできるような方法、例
えば超音波照射下においてエツチングするような
方法が好ましく、かかる方面での試みも多くなさ
れている。 For example, as for the etching method, it is preferable to use a method that enables uniform etching on a large substrate, such as etching under ultrasonic irradiation, and many attempts have been made in this direction.
このようなデバイスにおいて、配線を形成する
際には、配線を基板と同一平面上に形成する方法
と、絶縁膜を中間部に形成することによつて、配
線を２層、３層とする方法がある。 When forming wiring in such devices, there are two methods: forming the wiring on the same plane as the substrate, and forming two or three layers of wiring by forming an insulating film in the middle. There is.
前者の方法では、同一平面上に導体を形成する
ため、配線の基板に占める面積が増加し、必ずし
も適切ではない。後者の方法では導体を立体的に
形成することが可能であり、有力な方法といえ
る。導体の中間部に形成する絶縁膜には、ポリイ
ミドなどの有機絶縁膜と窒化シリコンなどの無機
絶縁膜がある。無機絶縁膜は、段差被覆性（ステ
ツプカバレージ）が悪い、膜にクラツクが入りや
すい、厚膜化が困難などの欠点がある。有機絶縁
膜は、スピンナーなどの装置を用いて簡単に形成
することができ、さらに厚膜化ができるという利
点をもつ。 In the former method, since the conductors are formed on the same plane, the area occupied by the wiring on the substrate increases, and this is not necessarily appropriate. The latter method allows conductors to be formed three-dimensionally, and can be said to be an effective method. The insulating film formed in the intermediate portion of the conductor includes an organic insulating film such as polyimide and an inorganic insulating film such as silicon nitride. Inorganic insulating films have drawbacks such as poor step coverage, the tendency for cracks to form in the film, and difficulty in increasing the film thickness. Organic insulating films have the advantage that they can be easily formed using a device such as a spinner, and can be made thicker.
有機絶縁膜を基板上に形成した後、その上に更
に導体を形成する際、絶縁膜が厚くなる程、上部
に形成した導体の断線が起こるという問題点があ
つた。
After an organic insulating film is formed on a substrate, when a conductor is further formed on the organic insulating film, there is a problem that the thicker the insulating film becomes, the more the conductor formed on the top becomes disconnected.
これは、絶縁膜パターンの形状が輪郭部で盛り
上がつたり逆テーパー状になるために生じる欠陥
である。 This is a defect that occurs because the shape of the insulating film pattern swells at the contour or becomes inversely tapered.
この発明は上記のような従来のものの問題点を
除去するためになされたもので、パターン全周に
わたつて輪郭部の盛り上がりの少ない、テーパを
もつ感光性樹脂のパターン形成方法を提供するこ
とを目的とする。 This invention was made in order to eliminate the problems of the conventional ones as described above, and it is an object of the present invention to provide a method of forming a pattern of a tapered photosensitive resin in which there is little bulge in the contour part over the entire circumference of the pattern. purpose.
この発明の感光性樹脂のパターン形成方法は、
所定パターン全周の輪郭部の溶解度を変化させる
ように相似パターンのフオトマスクを複数枚用い
てそれぞれのフオトマスクについて光照射し、所
定パターンの上記輪郭部の光照射量を所定パター
ンの境界から遠ざかるに従つて多くしたものであ
る。
The method for forming a pattern on a photosensitive resin of this invention includes:
Using a plurality of photomasks with similar patterns, each photomask is irradiated with light so as to change the solubility of the contour portion around the entire circumference of the predetermined pattern, and the amount of light irradiation on the contour portion of the predetermined pattern is changed as the distance from the boundary of the predetermined pattern increases. That's a lot.
この発明においては、相似パターンのフオトマ
スクを複数枚用いて光照射量を所定パターンの境
界から遠ざかるに従い段階的に多くしているの
で、所定パターン全周の輪郭部の溶解度が境界か
ら遠ざかるにつれ変化するので、それに伴い現像
後のパターン輪郭部に全周にわたつて均一な順テ
ーパを形成し、盛り上がりの生じるのを少なくす
る。
In this invention, a plurality of photomasks with similar patterns are used and the amount of light irradiation is increased stepwise as the distance from the border of the predetermined pattern increases, so that the solubility of the contour of the entire circumference of the predetermined pattern changes as the distance from the border increases. Accordingly, a uniform forward taper is formed over the entire circumference of the pattern contour after development to reduce the occurrence of bulges.
まず、シリコンウエハ、ステンレス板、アルミ
ニウム板、または銅板などの基板に、感光性樹脂
をスピン塗布など通常の方法により塗布し、感光
性樹脂層を形成する。
First, a photosensitive resin is applied to a substrate such as a silicon wafer, a stainless steel plate, an aluminum plate, or a copper plate by a conventional method such as spin coating to form a photosensitive resin layer.
次に、この感光性樹脂層に超高圧水銀灯などを
用いて所定のパターンを光照射する。この際、相
似パターンのフオトマスクを複数用いて複数回に
分けて適正量を光照射し、所定パターン全周の輪
郭部の光照射量を所定パターンの境界から遠ざか
るに従い階段的に多くする。その後、露光後の感
光性樹脂層を現像処理し、現像処理した感光性樹
脂層にリンス処理を施して感光性樹脂層に含有さ
れている現像液を除去する。現像処理及びリンス
処理は浸漬法、スプレー法、超音波照射浸漬法な
どの公知の現像方法またはリンス法を用いてよ
く、これらの方法を組み合わせて行なつてもよ
い。 Next, this photosensitive resin layer is irradiated with light in a predetermined pattern using an ultra-high pressure mercury lamp or the like. At this time, a plurality of photomasks with similar patterns are used to irradiate an appropriate amount of light in multiple times, and the amount of light irradiated on the contour portion around the entire circumference of the predetermined pattern is increased stepwise as the distance from the boundary of the predetermined pattern increases. Thereafter, the exposed photosensitive resin layer is developed, and the developed photosensitive resin layer is rinsed to remove the developer contained in the photosensitive resin layer. The development treatment and the rinsing treatment may be performed using a known development method such as a dipping method, a spray method, an ultrasonic irradiation dipping method, or a rinsing method, or a combination of these methods may be used.
以下、図面に示す態様例により、この発明を詳
細に説明する。第１図の断面図は、この発明の係
わる光照射の一実施例を示すもので、パターン全
周の輪郭部の光照射量を変化させるのに、相似パ
ターンのフオトマスクを複数枚（この場合は３
枚）用いて行うものである。図において、１は基
板、２は基板(1)上に塗布された感光性樹脂層、３
は所定パターンの正規の位置に置かれた正規のサ
イズのフオトマスク、４は同位置におかれた正規
のサイズのフオトマスク３よりひとまわり大きい
サイズの第２フオトマスク、５は同位置におかれ
た正規のサイズのフオトマスク３よりふたまわり
大きいサイズの第３フオトマスクである。所定パ
ターンの正規の位置に置かれたフオトマスク３を
用いて第１光照射し、次にひとまわり大きい第２
のフオトマスク４を用いて第２光照射し、さらに
ふたまわり大きい第３のフオトマスク５を用いて
光照射する。光照射量は正規のパターンサイズイ
を境界として、全周にわたつて均一に境界から遠
ざかるに従い輪郭部ロ，ハの順に段階的に増加
し、領域ニで最大になる。なお各光照射量は感光
樹脂層の適正光射量をマスクの枚数で割つた値と
する。 Hereinafter, the present invention will be explained in detail with reference to embodiments shown in the drawings. The cross-sectional view in FIG. 1 shows an embodiment of light irradiation according to the present invention, in which a plurality of photomasks with similar patterns (in this case 3
It is carried out using In the figure, 1 is a substrate, 2 is a photosensitive resin layer coated on the substrate (1), and 3 is a photosensitive resin layer coated on the substrate (1).
4 is a regular size photomask placed in the regular position of a predetermined pattern, 4 is a second photomask slightly larger than the regular size photomask 3 placed in the same position, and 5 is a regular size photomask placed in the same position. This is a third photomask that is two times larger than photomask 3, which has a size of . First light is irradiated using a photomask 3 placed at a regular position in a predetermined pattern, then a second light which is slightly larger is used.
A second photomask 4 is used to irradiate the second light, and a third photomask 5, which is larger in circumference, is used to irradiate the second light. The amount of light irradiation is uniformly distributed over the entire circumference with the normal pattern size A as the boundary, and gradually increases in the order of contours B and C as it moves away from the boundary, reaching a maximum in area D. Note that each amount of light irradiation is a value obtained by dividing the appropriate amount of light irradiation for the photosensitive resin layer by the number of masks.
実施例
あらかじめアルミニウム導体の形成されたガラ
ス基板上に感光性樹脂、この場合はネガ型フオト
レジスト、フオトニースUR−3140（商品名：東
レ社製）をスピン塗布し、75℃30分間窒素雰囲気
中でベーキングを行つた。次に第１図に示す方法
でキヤノン製PLA−300F露光装置を用いて、所
定パターン、この場合は第２図ａの平面図に示す
コンタクトホール（注）の光照射を行つた。次い
で専用現像液DV145（商品名：東レ社製）を用い
て約12分間音波照射下で現像を行つた後、イソプ
ロピルアルコールを用いてリンス処理を行い、窒
素ガスにて吹付乾燥し、所望の形状を有するコン
タクトホールを得た。得られたコンタクトホール
Ａ−Ｂにおける断面形状の測定結果を第２図ｂの
図に示す。縦軸は断面の高さを、横軸は位置を表
わし、Ｃ−Ｄはパターンの輪郭部である。Example: A photosensitive resin, in this case a negative photoresist, Photonice UR-3140 (trade name: manufactured by Toray Industries, Inc.), was spin-coated on a glass substrate on which an aluminum conductor had been formed in advance, and the film was coated in a nitrogen atmosphere at 75°C for 30 minutes. I did some baking. Next, a predetermined pattern, in this case a contact hole (note) shown in the plan view of FIG. 2a, was irradiated with light using a Canon PLA-300F exposure apparatus in the manner shown in FIG. 1. Next, after developing under sonic irradiation for about 12 minutes using a special developer DV145 (product name: manufactured by Toray Industries, Inc.), rinsing with isopropyl alcohol, and spray drying with nitrogen gas to obtain the desired shape. A contact hole with . The result of measuring the cross-sectional shape of the obtained contact hole AB is shown in FIG. 2b. The vertical axis represents the height of the cross section, the horizontal axis represents the position, and C-D represents the contour of the pattern.
注） 感光性樹脂層（絶縁膜）の下地にあるAl
導体と上部に形成した導体との間に導通をとる
ための穴。Note) Al underlying the photosensitive resin layer (insulating film)
A hole for establishing continuity between the conductor and the conductor formed on the top.
比較例
実施例と同様にしてフオトニースの塗膜、感光
性樹脂層を形成し、所定のマスクを用いて感光性
樹脂層の適正光照射量の光照射を行つた。次に実
施例と同様に現像、リンス処理を行つた。得られ
たコンタクトホールのパターンを第３図ａの平面
図に示す。また、そのＡ−Ｂ間断面形状の測定結
果を第３図ｂの図に示す。縦軸は断面の高さを表
わし、横軸は位置を表わし、Ｃ−Ｄはパターンの
輪郭部である。Comparative Example A photonic coating film and a photosensitive resin layer were formed in the same manner as in the example, and the photosensitive resin layer was irradiated with an appropriate amount of light using a predetermined mask. Next, development and rinsing treatments were performed in the same manner as in the examples. The resulting contact hole pattern is shown in the plan view of FIG. 3a. Moreover, the measurement result of the cross-sectional shape between A and B is shown in the diagram of FIG. 3b. The vertical axis represents the height of the cross section, the horizontal axis represents the position, and C-D is the contour of the pattern.
第３図ｂより、従来法によれば、コンタクトホ
ールの輪郭部が盛り上がつていることがわかる。
また、テーパー部も直線状になつており、上部に
導体を形成すると、ステツプカバレージが悪化す
る。 From FIG. 3b, it can be seen that according to the conventional method, the contour of the contact hole is raised.
Further, the tapered portion is also linear, and if a conductor is formed on the upper portion, step coverage will deteriorate.
第２図ｂより、この発明によつて形成したコン
タクトホールの輪郭部の盛り上がりは小さくなつ
ており、また、テーパー部も順テーパーの２段テ
ーパー状をなしており、上部に導体を形成する
際、ステツプカバレージが良い。 From FIG. 2b, it can be seen that the contour of the contact hole formed according to the present invention has a smaller protrusion, and the tapered portion also has a two-step tapered shape, which makes it difficult to form a conductor on the upper part. , good step coverage.
以上、この発明を感光性ポリイミドを用いた実
施例に基づいて説明したが、この発明はかかる実
施例のみに限定されるものではなく、ネガ、ポジ
型レジスト、あるいは他の種類のポリイミドにこ
の発明を適用しても何ら差し支えはない。 Although the present invention has been described above based on an example using photosensitive polyimide, the present invention is not limited to such an example. There is no problem in applying it.
この発明は以上説明したとおり、基板に感光性
樹脂層を形成し、所定パターンに光照射し、これ
を現像して所定パターンを形成するものにおい
て、所定パターン全周の輪郭部の溶解度を変化さ
せるように相似パターンのフオトマスクを複数枚
用いて所定パターンの上記輪郭部の光照射量を所
定パターンの境界から遠ざかるに従つて多くする
ことにより、パターン全周にわたつて輪郭部の盛
り上がりが少なく、均一な順テーパを有するパタ
ーンを感光性樹脂に形成することができる。
As explained above, this invention is a device in which a photosensitive resin layer is formed on a substrate, a predetermined pattern is irradiated with light, and this is developed to form a predetermined pattern, in which the solubility of the contour portion around the entire circumference of the predetermined pattern is changed. By using a plurality of photomasks with similar patterns and increasing the amount of light irradiated on the contour of the predetermined pattern as it moves away from the boundary of the predetermined pattern, the contour is uniform with less bulge over the entire circumference of the pattern. A pattern having a forward taper can be formed in the photosensitive resin.
第１図は、この発明に係わる光照射の一実施例
を示す断面図、第２図ａはこの発明の一実施例に
より得られたパターンの平面図、第２図ｂは第２
図ａのＡ−Ｂ断面における高さの計測図、第３図
ａは従来法により得られたパターンの平面図、第
３図ｂは第３図ａのＡ−Ｂ断面における高さの計
測図である。図において、１は基板、２は感光性
樹脂層、３は正規の位置、正規サイズのフオトマ
スク、４はひとまわり大きいフオトマスク、５は
ふたまわり大きいフオトマスクである。
なお、図中、同一符号は同一、または相当部分
を示す。
FIG. 1 is a sectional view showing an embodiment of light irradiation according to the present invention, FIG. 2a is a plan view of a pattern obtained by an embodiment of the invention, and FIG.
Figure 3a is a plan view of a pattern obtained by the conventional method; Figure 3b is a height measurement diagram at cross section A-B in Figure 3a. It is. In the figure, 1 is a substrate, 2 is a photosensitive resin layer, 3 is a photomask in a regular position and size, 4 is a photomask that is slightly larger, and 5 is a photomask that is twice as large. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.
Claims (1)
に光照射し、これを現像して所定パターンを形成
するものにおいて、所定パターン全周の輪郭部の
溶解度を変化させるように相似パターンのフオト
マスクを複数枚用いてそれぞれのフオトマスクに
ついて光照射し、所定パターンの上記輪郭部の光
照射量を所定パターンの境界から遠ざかるに従つ
て多くしたことを特徴とする感光性樹脂のパター
ン形成方法。1 In a device in which a photosensitive resin layer is formed on a substrate, a predetermined pattern is irradiated with light, and this is developed to form a predetermined pattern, a photomask with a similar pattern is used to change the solubility of the contours around the entire circumference of the predetermined pattern. A method for forming a pattern on a photosensitive resin, characterized in that a plurality of photomasks are used and each of the photomasks is irradiated with light, and the amount of light irradiation on the contour portion of the predetermined pattern is increased as the distance from the boundary of the predetermined pattern increases.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59234767A JPS61111533A (en) | 1984-11-05 | 1984-11-05 | Pattern formation for photosensitive resin |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59234767A JPS61111533A (en) | 1984-11-05 | 1984-11-05 | Pattern formation for photosensitive resin |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61111533A JPS61111533A (en) | 1986-05-29 |
| JPH031822B2 true JPH031822B2 (en) | 1991-01-11 |
Family
ID=16976038
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59234767A Granted JPS61111533A (en) | 1984-11-05 | 1984-11-05 | Pattern formation for photosensitive resin |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61111533A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100742090B1 (en) | 2005-12-29 | 2007-07-23 | 동부일렉트로닉스 주식회사 | Method of manufacturing photoresist patterns |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5348676A (en) * | 1976-10-15 | 1978-05-02 | Handotai Kenkyu Shinkokai | Method of forming pattern |
| JPS584928A (en) * | 1981-06-30 | 1983-01-12 | Fujitsu Ltd | Forming method for thin film pattern |
| JPS5864028A (en) * | 1981-09-24 | 1983-04-16 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Method of forming relief image |
| JPS5877231A (en) * | 1981-11-04 | 1983-05-10 | Hitachi Ltd | Taper formation of resist pattern |
-
1984
- 1984-11-05 JP JP59234767A patent/JPS61111533A/en active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5348676A (en) * | 1976-10-15 | 1978-05-02 | Handotai Kenkyu Shinkokai | Method of forming pattern |
| JPS584928A (en) * | 1981-06-30 | 1983-01-12 | Fujitsu Ltd | Forming method for thin film pattern |
| JPS5864028A (en) * | 1981-09-24 | 1983-04-16 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Method of forming relief image |
| JPS5877231A (en) * | 1981-11-04 | 1983-05-10 | Hitachi Ltd | Taper formation of resist pattern |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61111533A (en) | 1986-05-29 |
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