JPH03179728A - Cleaning process of semiconductor wafer - Google Patents
Cleaning process of semiconductor waferInfo
- Publication number
- JPH03179728A JPH03179728A JP31828289A JP31828289A JPH03179728A JP H03179728 A JPH03179728 A JP H03179728A JP 31828289 A JP31828289 A JP 31828289A JP 31828289 A JP31828289 A JP 31828289A JP H03179728 A JPH03179728 A JP H03179728A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- cleaning
- heating means
- rear surface
- cleaned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 238000004140 cleaning Methods 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims abstract description 21
- 230000008961 swelling Effects 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 46
- 239000007788 liquid Substances 0.000 description 12
- 239000010408 film Substances 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 238000010586 diagram Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910000809 Alumel Inorganic materials 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910001179 chromel Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- -1 nichrome Chemical compound 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、半導体ウェハの洗浄方法に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a method for cleaning semiconductor wafers.
［従来の技術］
半導体製造工程において、半導体ウェハＷは通常スピン
コーティングによりフォトレジストが塗布される。すな
わち、第３図に示すように、処理室内の回転機構３０に
連結されているチャック２０に半導体ウェハＷ゛を真空
吸着させ、回転機構３０によりチャック２０を５００〜
１０００回転／分の速度で回転させ、処理液供給系から
供給される処理液であるフォトレジスト液を半導体ウェ
ハＷ゛上方の移動可能なノズルから（図示せず）半導体
ウェハＷ′の表面に滴下し、回転機構３０の回転数およ
び回転時間を調整して半導体ウェハＷ”表面に所望の厚
さのフォトレジスト膜を形成する。次に速度を上げ、３
０００〜４０００回転／分で余分なレジスト液の振切り
を行なう。[Prior Art] In a semiconductor manufacturing process, a photoresist is usually applied to a semiconductor wafer W by spin coating. That is, as shown in FIG. 3, the semiconductor wafer W' is vacuum-adsorbed onto the chuck 20 connected to the rotation mechanism 30 in the processing chamber, and the chuck 20 is rotated by the rotation mechanism 30 to
Rotating at a speed of 1000 revolutions/min, photoresist liquid, which is a processing liquid supplied from a processing liquid supply system, is dropped onto the surface of semiconductor wafer W' from a movable nozzle (not shown) above semiconductor wafer W'. Then, the rotation speed and rotation time of the rotation mechanism 30 are adjusted to form a photoresist film of a desired thickness on the surface of the semiconductor wafer W''.Then, the speed is increased, and
The excess resist solution is shaken off at a speed of 000 to 4000 revolutions/minute.
［発明が解決すべき課題］
次に、同図に示す洗浄機構４０のノズル５０から所望の
洗浄液を噴出させて、半導体ウェハＷ。[Problems to be Solved by the Invention] Next, a desired cleaning liquid is ejected from the nozzle 50 of the cleaning mechanism 40 shown in the figure to clean the semiconductor wafer W.
の裏面や側面に回り込んだ余分なレジスト液を洗い流す
裏面洗浄を行なっているが、フォトレジスト膜を形成し
た表面の周辺部分Ｗ１°（６インチウェハでは外周から
２０ｍｍ近辺）のフォトレジスト（第４図参照）が急速
に硬化してしまうためその部分が盛り上がり、不均一に
波打つ状態になる。Backside cleaning is performed to wash away excess resist solution that has gotten around to the backside and sides of the wafer, but the photoresist (4th (see figure) hardens rapidly, causing the area to bulge and become unevenly wavy.
この原因を種々調査した結果、裏面洗浄時この液により
外周近辺が冷え、この冷えた部分Ｗ０゛に対応して硬化
するものであることが判った。As a result of various investigations into the cause of this, it was found that the liquid cools the outer periphery during backside cleaning, and hardens in response to this cooled area W0.
従来、２５６ＫＤＲＡＭの半導体ウェハＷにおける塗膜
厚さの面内均一性（ユニフオミテイ）のレンジ（ＲＡＮ
ＧＥ）は例えば平均厚さが１μの場合４０〜５０人程度
で形成たが（第５図参照）、近年生産が増加している４
ＭＤＲＡＭ、１６ＭＤＲＡＭにおいては２０人程度以下
が要求されている。Conventionally, the range of in-plane uniformity (uniformity) of the coating film thickness (RAN
For example, if the average thickness was 1μ, it took about 40 to 50 people to make the GE) (see Figure 5), but production has increased in recent years4.
For MDRAM and 16MDRAM, approximately 20 or less people are required.
このように、今後−層高い精度が要求されるなかで、半
導体ウェハ上に形成されたフォトレジスト膜厚の面内均
一性（ユニフオミティ）が損われ、半導体ウェハから得
られるチップに不良品を生じる原因になり、半導体ウェ
ハＷ′から得られるチップ数の歩留りは、従来、かなり
低かった。特に、半導体ウェハＷ′の径は大きくなる傾
向が確実であり、今後とも、処理膜厚の面内均一性（ユ
ニフォミティ）の確保が大きな課題で、半導体ウェハＷ
°の裏面洗浄時のレジストの硬化を防止することが望ま
れていた。In this way, in the future, as higher precision is required, the in-plane uniformity (uniformity) of the photoresist film formed on semiconductor wafers will be impaired, resulting in defective chips obtained from semiconductor wafers. As a result, the yield of chips obtained from a semiconductor wafer W' has conventionally been quite low. In particular, it is certain that the diameter of semiconductor wafers W' tends to increase, and ensuring in-plane uniformity of processed film thickness will continue to be a major issue.
It has been desired to prevent resist hardening during backside cleaning.
［発明の目的］
本発明は上記の点を解決するためになされたもので、裏
面および側面洗浄時のレジスト等被洗浄体の硬化による
盛り上がり等を防ぎ、膜厚の面内均一性（ユニフオミテ
ィ）の確保が可能な半導体ウェハの洗浄方法を提供する
ことを目的とする。[Objective of the Invention] The present invention was made to solve the above-mentioned problems, and it prevents swelling caused by hardening of objects to be cleaned such as resist during back and side cleaning, and improves in-plane uniformity of film thickness (uniformity). The purpose of the present invention is to provide a method for cleaning semiconductor wafers that can ensure the following.
［課題を解決するための手段］
上記の目的を達成するために、本発明による半導体ウェ
ハの洗浄方法は、半導体ウェハの裏面および側面を洗浄
するに際し、半導体ウェハの裏面側を加温状態で洗浄す
るものである。[Means for Solving the Problems] In order to achieve the above object, the method for cleaning a semiconductor wafer according to the present invention includes cleaning the back side of the semiconductor wafer in a heated state when cleaning the back side and side surfaces of the semiconductor wafer. It is something to do.
さらに、半導体ウェハの中心および外周間を加温手段を
移動させて洗浄するものである。Furthermore, the heating means is moved between the center and the outer periphery of the semiconductor wafer to clean it.
［作用］
本発明による半導体ウェハの裏面洗浄方法は、この洗浄
に際し、半導体ウェハの裏面を加熱した状態で裏面洗浄
することにより、レジスト等被洗浄体の硬化を防止でき
処理膜の面内均一性（ユニフォミティ）の確保が可能と
なる。[Function] In the method for cleaning the back side of a semiconductor wafer according to the present invention, by cleaning the back side of the semiconductor wafer while heating the back side of the semiconductor wafer, hardening of the object to be cleaned such as resist can be prevented, and the in-plane uniformity of the processed film can be improved. (uniformity) can be ensured.
［実施例］
以下、本発明による半導体ウェハの洗浄方法の好ましい
実施例を図面を参照して説明する。[Embodiments] Hereinafter, preferred embodiments of the semiconductor wafer cleaning method according to the present invention will be described with reference to the drawings.
本発明の半導体ウェハの洗浄方法に適応される洗浄装置
は、第１図に示すように、処理室内の回転機構３に連結
されているチャック２に半導体ウェハＷを真空吸着させ
、回転機構３によりチャック２を５００〜１０００回転
／分の速度で回転させ、処理液供給系から供給される処
理液であるフォトレジスト液を半導体ウェハＷ上方の移
動可能なノズルから（図示せず）半導体ウェハＷの表面
に滴下し、回転機構３の回転数および回転時間を調整し
て半導体ウェハＷ表面に所望の厚さのフォトレジスト膜
を形成するよう構成されている。本発明に適応される洗
浄装置には、半導体ウェハＷの裏面側に加温手段１が設
けられている。この加温手段１は半導体ウェハＷの中心
から外周の間を移動可能な構造で、洗浄機構４のノズル
５から噴射される洗浄液の当る部分Ｗ０の位置変化に応
じて第２図の矢印に示すように、移動させて使用する。As shown in FIG. 1, a cleaning apparatus adapted to the semiconductor wafer cleaning method of the present invention vacuum-chucks a semiconductor wafer W to a chuck 2 connected to a rotation mechanism 3 in a processing chamber, and the rotation mechanism 3 The chuck 2 is rotated at a speed of 500 to 1000 revolutions per minute, and the photoresist liquid, which is a processing liquid supplied from the processing liquid supply system, is applied to the semiconductor wafer W from a movable nozzle (not shown) above the semiconductor wafer W. It is configured to drop a photoresist film onto the surface of the semiconductor wafer W and form a photoresist film of a desired thickness on the surface of the semiconductor wafer W by adjusting the rotation speed and rotation time of the rotation mechanism 3. A cleaning apparatus adapted to the present invention is provided with heating means 1 on the back side of the semiconductor wafer W. This heating means 1 is movable between the center and the outer periphery of the semiconductor wafer W, and is shown by the arrow in FIG. Move it and use it.
この加温手段１の移動は、半導体ウェハＷの裏面を洗浄
する洗浄機構４のノズル５の位置、角度等に対応して連
動することが望ましい（加温手段１と洗浄機構４両者間
の連動をコントロールする手段は図示せず）。The movement of the heating means 1 is preferably linked to the position, angle, etc. of the nozzle 5 of the cleaning mechanism 4 that cleans the back side of the semiconductor wafer W (the movement of the heating means 1 and the cleaning mechanism 4 is (Means for controlling are not shown).
半導体ウェハＷの裏面洗浄はチャック２上で回転させな
がら行なわれるので、加温手段１は第２図に示すように
、はぼ円形の半導体ウェハＷの直径上に２カ所設ければ
所望の効果が得られるものである。加温手段１は公知の
薄膜ヒータが好適である。即ち、クロム、ニッケル、白
金、タンタル、タングステン、スズ、鉄、鉛、アルメル
、ベリリウム、アンチモン、インジウム、クロメル、コ
バルト、ストロンシウム、ロジウム、パラジウム、マグ
ネシウム、モリブデン、リチウム、ルビジウム等の金属
単体およびカーボンブラック、グラファイト等の炭素系
単体の他、ニクロム、ステンレス、青銅、黄銅等の合金
、ポリマーグラフトカーボン等のポリマー系複合材料、
ケイ化モリブデン等の複合セラミック材料を含め、導電
性を有し通電により抵抗発熱体となりうるちのが好適で
、この薄膜ヒータの表面には洗浄液により変質しないよ
う加工を施すことが望ましい。Since the back side of the semiconductor wafer W is cleaned while being rotated on the chuck 2, the desired effect can be achieved by providing the heating means 1 at two locations on the diameter of the roughly circular semiconductor wafer W, as shown in FIG. is obtained. The heating means 1 is preferably a known thin film heater. That is, elemental metals such as chromium, nickel, platinum, tantalum, tungsten, tin, iron, lead, alumel, beryllium, antimony, indium, chromel, cobalt, strontium, rhodium, palladium, magnesium, molybdenum, lithium, rubidium, and carbon. In addition to carbon-based substances such as black and graphite, alloys such as nichrome, stainless steel, bronze, and brass, polymer-based composite materials such as polymer grafted carbon,
It is preferable to use a composite ceramic material such as molybdenum silicide, which is electrically conductive and can become a resistance heating element when energized, and it is desirable to process the surface of this thin film heater so that it will not be altered by the cleaning liquid.
裏面洗浄に伴う半導体ウェハＷの損失熱量に相当する熱
量を自動的に半導体ウェハＷに与え、処理作業の行なわ
れているクリーンルームの室温に近い設定温度（約２０
〜２５℃程度）を常時維持できるよう、この加温手段１
は通電により加温状態が制御されている。The amount of heat equivalent to the amount of heat lost in the semiconductor wafer W due to backside cleaning is automatically applied to the semiconductor wafer W, and the temperature is set close to the room temperature of the clean room where the processing work is performed (about 20
This heating means 1 is used to maintain a constant temperature of
The heating state is controlled by applying electricity.
さらに、加温手段は半導体ウェハの中心から外周の間を
移動可能なな構造であるので、裏面および側面洗浄に伴
う半導体ウェハＷ°の冷却が防止でき、冷却によって急
速に硬化してその部分が盛り上がるための不均一な波打
ちがなくなる。Furthermore, since the heating means is structured to be movable between the center and the outer periphery of the semiconductor wafer, it is possible to prevent the semiconductor wafer W° from being cooled during back and side cleaning, and the cooling rapidly hardens the area. There will be no uneven waves due to swelling.
上記実施例は、半導体ウェハにフォトレジスト膜を塗布
するスピンコーティング時のレジスト液を裏面洗浄する
例で説明したが、本発明はこの他の処理液で半導体ウェ
ハを処理した次工程の裏面洗浄にも好適であることは言
うまでもない。The above embodiment has been described as an example of cleaning the backside of the resist solution during spin coating in which a photoresist film is applied to a semiconductor wafer, but the present invention is also applicable to cleaning the backside of the semiconductor wafer in the next step after processing the semiconductor wafer with other processing liquids. Needless to say, it is also suitable.
また、上記実施例では、半導体ウェハの裏面を加温する
例について説明したが、洗浄液を加温してもよい。加温
手段としてはノズル近傍にヒータを設けてもよいし、洗
浄液容器に加熱手段を設けてもよい。Further, in the above embodiment, an example was explained in which the back surface of the semiconductor wafer is heated, but the cleaning liquid may also be heated. As the heating means, a heater may be provided near the nozzle, or the heating means may be provided in the cleaning liquid container.
［発明の効果］
本発明の半導体ウェハの洗浄方法によれば、半導体ウェ
ハの裏面および側面の洗浄に際し、半導体ウェハの裏面
を加温状態で洗浄するので処理膜厚の面内均一性（ユニ
フォミティ）の確保が可能となり、従って半導体ウェハ
から得られるチップ数の歩留りが向上する。[Effects of the Invention] According to the semiconductor wafer cleaning method of the present invention, when cleaning the back and side surfaces of the semiconductor wafer, the back surface of the semiconductor wafer is cleaned in a heated state, which improves in-plane uniformity of the processed film thickness. Therefore, the yield of chips obtained from semiconductor wafers is improved.
第１図は本発明に適応される洗浄装置の一実施例の構成
図、第２図はその加温手段の配置を示す図、第３図は従
来の洗浄装置の構成図、第４図は従来の半導体ウェハの
面内不均一部分を示す図、第５図はその詳細を示す断面
図である。
１ 、加温手段
２８゜０．チャック
３ 、、、、、、、、回転機構
４、、、、、、、、洗浄機構
、ノズル
Ｗ。
、ウェハFIG. 1 is a block diagram of an embodiment of a cleaning device adapted to the present invention, FIG. 2 is a diagram showing the arrangement of its heating means, FIG. 3 is a block diagram of a conventional cleaning device, and FIG. 4 is a diagram showing the arrangement of the heating means. FIG. 5 is a diagram showing in-plane non-uniform portions of a conventional semiconductor wafer, and FIG. 5 is a cross-sectional view showing details thereof. 1.Heating means 28°0. Chuck 3, Rotating mechanism 4, Cleaning mechanism, Nozzle W. , wafer
Claims (1)
前記半導体ウェハの裏面側を加温状態で洗浄することを
特徴とする半導体ウェハの洗浄方法。 ２、半導体ウェハの中心および外周間を加温手段を移動
させて洗浄することを特徴とする請求項１記載の半導体
ウェハの洗浄方法。[Claims] 1. When cleaning the back and side surfaces of a semiconductor wafer,
A method for cleaning a semiconductor wafer, comprising cleaning the back side of the semiconductor wafer in a heated state. 2. The method of cleaning a semiconductor wafer according to claim 1, wherein the cleaning is performed by moving a heating means between the center and the outer periphery of the semiconductor wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31828289A JPH03179728A (en) | 1989-12-07 | 1989-12-07 | Cleaning process of semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31828289A JPH03179728A (en) | 1989-12-07 | 1989-12-07 | Cleaning process of semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03179728A true JPH03179728A (en) | 1991-08-05 |
Family
ID=18097465
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31828289A Pending JPH03179728A (en) | 1989-12-07 | 1989-12-07 | Cleaning process of semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03179728A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100284557B1 (en) * | 1993-08-23 | 2001-04-02 | 히가시 데쓰로 | Resist processing apparatus and resist processing method |
| US6332723B1 (en) * | 1999-07-28 | 2001-12-25 | Tokyo Electron Limited | Substrate processing apparatus and method |
-
1989
- 1989-12-07 JP JP31828289A patent/JPH03179728A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100284557B1 (en) * | 1993-08-23 | 2001-04-02 | 히가시 데쓰로 | Resist processing apparatus and resist processing method |
| US6332723B1 (en) * | 1999-07-28 | 2001-12-25 | Tokyo Electron Limited | Substrate processing apparatus and method |
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