JPH07171759A - Method for controlling temperature of polishing level block - Google Patents
Method for controlling temperature of polishing level blockInfo
- Publication number
- JPH07171759A JPH07171759A JP34495293A JP34495293A JPH07171759A JP H07171759 A JPH07171759 A JP H07171759A JP 34495293 A JP34495293 A JP 34495293A JP 34495293 A JP34495293 A JP 34495293A JP H07171759 A JPH07171759 A JP H07171759A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- polishing
- water
- turntable
- cooling jacket
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、半導体基板用のポリッ
シング装置のポリッシング定盤の温度制御方法に係るも
ので、特にポリッシング定盤の温度を一定にして加工精
度の向上を計ったものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of controlling a temperature of a polishing surface plate of a polishing apparatus for a semiconductor substrate, and more particularly to improving the processing accuracy by keeping the temperature of the polishing surface plate constant. .
【0002】[0002]
【従来の技術】従来のポリッシング定盤の温度制御方法
を図2,3に示し説明する。ポリッシング定盤11はタ
ーンテーブル12とターンテーブル12を取付け、回転
駆動を与えると共にターンテーブル12を冷却するため
の水冷ジャケット13とターンテーブル12の上面に貼
着された研磨布14とで構成されている。また、水冷ジ
ャケット13には冷却水を流通させる溝15がターンテ
ーブル12の下面に接して設けられている。2. Description of the Related Art A conventional method for controlling the temperature of a polishing surface plate will be described with reference to FIGS. The polishing surface plate 11 is composed of a turntable 12 and a turntable 12. The polishing surface plate 11 includes a water cooling jacket 13 for rotating the turntable 12 and cooling the turntable 12, and a polishing cloth 14 attached to the upper surface of the turntable 12. There is. Further, a groove 15 for circulating cooling water is provided in the water cooling jacket 13 in contact with the lower surface of the turntable 12.
【0003】一方ポリッシング定盤11の温度制御部材
として研磨布14の表面温度を測定する放射温度計16
と測定温度から水冷ジャケット13への冷却水を制御す
る電磁開閉弁17とこの電磁弁17を開閉させるための
コントローラ18が設けられている。この構成における
ポリッシング加工はポリッシング定盤11の上面すなわ
ち研磨布14の上面に半導体基板を図示しないプレート
にセットしてこのプレートを介して押付ヘッドで研磨布
14に押付けながら回転させポリッシングを行う、また
は押付ヘッドの代りに上定盤でキャリアにセットされた
半導体基板を研磨布14に押付け回転を与えながらポリ
ッシング加工を行う。On the other hand, as a temperature control member of the polishing surface plate 11, a radiation thermometer 16 for measuring the surface temperature of the polishing cloth 14
An electromagnetic opening / closing valve 17 for controlling cooling water from the measured temperature to the water cooling jacket 13 and a controller 18 for opening / closing the electromagnetic valve 17 are provided. In the polishing process in this configuration, a semiconductor substrate is set on a plate (not shown) on the upper surface of the polishing surface plate 11, that is, the upper surface of the polishing cloth 14, and polishing is performed by rotating the semiconductor cloth while pressing it against the polishing cloth 14 with a pressing head. Instead of the pressing head, the semiconductor substrate set on the carrier is pressed against the polishing cloth 14 by the upper surface plate to perform polishing while applying rotation to the polishing cloth 14.
【0004】これらのポリッシング加工はいずれも研磨
液を供給しながら行うが加工精度を上げるため、すなわ
ちターンテーブル12の表面曲率を一定にするためポリ
ッシング定盤11の温度制御を行っている。All of these polishing processes are carried out while supplying a polishing liquid, but the temperature of the polishing surface plate 11 is controlled in order to improve the processing accuracy, that is, to keep the surface curvature of the turntable 12 constant.
【0005】従来の温度制御方法はターンテーブル12
の上面に貼着された研磨布14の加工中の温度を放射温
度計16で測定し、この温度(通常40℃前後)が一定
になるようにコントローラ18で電磁開閉弁17を開閉
させて冷却水を水冷ジャケット13へ供給または遮断し
て温度コントロールを行っている。The conventional temperature control method is the turntable 12
The radiation thermometer 16 measures the temperature of the polishing cloth 14 attached to the upper surface of the plate during the processing, and the controller 18 opens and closes the electromagnetic opening / closing valve 17 so that this temperature (usually around 40 ° C.) is cooled. The temperature is controlled by supplying or shutting off water to the water cooling jacket 13.
【0006】[0006]
【発明が解決しようとする課題】従来のポリッシング定
盤11の温度制御方法は、前述したように研磨布14の
表面温度を測定してこの温度から水冷ジャケット13へ
の冷却水を制御する方法であるが研磨布14の表面の加
工熱は研磨布14を通過し、さらにターンテーブル12
を通り水冷ジャケット13へと伝えられていく、研磨布
14は通常プラスチック材料でできているため熱伝導率
が悪く、加工時の研磨布14の表面温度とターンテーブ
ル12の表面温度とは通常数度の温度差がある。The conventional method for controlling the temperature of the polishing surface plate 11 is a method of measuring the surface temperature of the polishing cloth 14 and controlling the cooling water from this temperature to the water cooling jacket 13 as described above. However, the processing heat of the surface of the polishing cloth 14 passes through the polishing cloth 14 and the turntable 12
Since the polishing cloth 14 is normally made of a plastic material and has low thermal conductivity, the surface temperature of the polishing cloth 14 and the surface temperature of the turntable 12 at the time of processing are usually several numbers. There is a temperature difference of degrees.
【0007】その上近年温度による熱変形を防止するた
めターンテーブル材料に低熱膨張材料が使われるように
なった。これらの材料は一般的に熱伝導率が悪く、研磨
布14の表面温度の変化に対して水冷ジャケット13の
冷却水の制御では水冷ジャケット13の体積が大きいこ
ともあって敏速にコントロールできず遅れが大きく研磨
布14の表面温度を一定に保つことが困難である。Moreover, in recent years, low thermal expansion materials have been used as turntable materials in order to prevent thermal deformation due to temperature. These materials generally have poor thermal conductivity, and the control of the cooling water of the water cooling jacket 13 cannot be promptly controlled due to the large volume of the water cooling jacket 13 due to the change in the surface temperature of the polishing cloth 14, so that there is a delay. Is large and it is difficult to keep the surface temperature of the polishing pad 14 constant.
【0008】そのためポリッシング加工現場では、むし
ろ研磨材の流量を調整して研磨布14の表面温度を一定
に保っている例もある。しかしながらこの研磨剤の流量
を調整する方法は研磨剤による化学的作用を変動させる
要因となり決して良い方法ではない。For this reason, in some cases, the surface temperature of the polishing pad 14 is kept constant by adjusting the flow rate of the polishing material at the polishing site. However, the method of adjusting the flow rate of the polishing agent is not a good method because it causes a change in the chemical action of the polishing agent.
【0009】また、研磨剤の流量調整をやらない場合は
経験的に運転開始後何時間で安定するかその時間を見計
らって製品の良悪を決定していた。Further, when the flow rate of the polishing agent is not adjusted, the quality of the product has been empirically determined by observing how many hours after the start of operation it becomes stable.
【0010】そこで本発明は、ターンテーブル12の表
面形状の変化は体積の大きい水冷ジャケット13の熱変
化によるところが大きいものと判断されることから水冷
ジャケット13の温度を測定して、この温度から水冷ジ
ャケット13への冷却水を制御して研磨布14が貼着さ
れたターンテーブル12の表面曲率を一定にして高精度
のポリッシング加工が安定してできると共に研磨剤の流
量を変えることなく研磨布14の表面温度を一定にして
研磨剤による化学作用を安定させることを目的としたも
のである。Therefore, according to the present invention, it is judged that the change of the surface shape of the turntable 12 is largely due to the heat change of the water cooling jacket 13 having a large volume. Therefore, the temperature of the water cooling jacket 13 is measured, and the water cooling is performed from this temperature. By controlling the cooling water to the jacket 13 to make the surface curvature of the turntable 12 to which the polishing cloth 14 is adhered constant, a highly accurate polishing process can be stably performed and the polishing cloth 14 can be used without changing the flow rate of the polishing agent. It is intended to stabilize the chemical action of the polishing agent by keeping the surface temperature of the above.
【0011】[0011]
【課題を解決するための手段】上記課題を解決するため
に、本願発明のポリッシング定盤の温度制御方法は、タ
ーンテーブルと水冷ジャケットより成る半導体基板用の
ポリッシング装置のポリッシング定盤の温度制御方法に
おいて、前記水冷ジャケット部の温度を温度計により測
定し、この温度が所定の温度になるように水冷ジャケッ
トへの冷却水を制御して、ターンテーブル表面の温度を
一定にして、ターンテーブル表面の曲率を一定に保持す
るようにしたものである。In order to solve the above problems, a method of controlling the temperature of a polishing surface plate according to the present invention is a method of controlling the temperature of a polishing surface plate of a semiconductor substrate polishing apparatus including a turntable and a water cooling jacket. In the above, the temperature of the water cooling jacket is measured with a thermometer, and the cooling water to the water cooling jacket is controlled so that this temperature becomes a predetermined temperature, the temperature of the turntable surface is kept constant, and The curvature is kept constant.
【0012】[0012]
【作用】上記構成によれば水冷ジャケット部の温度を測
定し、この温度が所定温度になるように水冷ジャケット
への冷却水を制御してターンテーブルの表面温度を一定
にすることによりターンテーブルの表面の曲率を一定形
状に保持する。According to the above construction, the temperature of the water-cooling jacket is measured, and the cooling water to the water-cooling jacket is controlled so that this temperature becomes a predetermined temperature to keep the surface temperature of the turntable constant. Keep the surface curvature constant.
【0013】[0013]
【実施例】本発明のポリッシング定盤の温度制御方法は
水冷ジャケット13の温度を測定して、この温度により
水冷ジャケットへの冷却水を制御するようにしたもので
ある。EXAMPLE A method of controlling the temperature of a polishing surface plate of the present invention is to measure the temperature of a water cooling jacket 13 and control the cooling water to the water cooling jacket by this temperature.
【0014】以下本発明の一実施例について図1を参照
して説明する。本図は半導体基板用のポリッシング装置
を示すもので水冷ジャケット13の表面温度を測定する
放射温度計16が水冷ジャケット13の側部に設けられ
ている。An embodiment of the present invention will be described below with reference to FIG. This drawing shows a polishing apparatus for a semiconductor substrate, and a radiation thermometer 16 for measuring the surface temperature of the water cooling jacket 13 is provided on the side of the water cooling jacket 13.
【0015】また、放射温度計16で測定した測定温度
から冷却水を水冷ジャケット13へ流通または遮断する
ための電磁開閉弁17と、電磁開閉弁17の開閉制御を
行うコントローラ18とが設けられている。Further, an electromagnetic opening / closing valve 17 for circulating or blocking the cooling water from the measurement temperature measured by the radiation thermometer 16 to the water cooling jacket 13, and a controller 18 for controlling opening / closing of the electromagnetic opening / closing valve 17 are provided. There is.
【0016】このように構成されているため、ポリッシ
ング加工に際しては、水冷ジャケット13の表面温度を
放射温度計16で測定し、この測定温度からコントロー
ラ18により電磁開閉弁17をON,OFFさせて水冷
ジャケット13への冷却水の流通または遮断を行い、水
冷ジャケット13の表面温度を常に一定にして安定した
形状を保持させる。With the above construction, during polishing, the surface temperature of the water cooling jacket 13 is measured by the radiation thermometer 16, and the controller 18 turns the electromagnetic on-off valve 17 ON and OFF from the measured temperature to perform water cooling. The cooling water is circulated or cut off to the jacket 13 so that the surface temperature of the water cooling jacket 13 is always kept constant and a stable shape is maintained.
【0017】図4は水冷ジャケット13の温度と半導体
基板の加工精度の変化の関係(テスト結果)をグラフ化
したものである。図4に示すように加工開始は、定盤全
体が室温まで冷えており加工精度も悪くポリッシング加
工を重ねていくうちにポリッシング定盤全体の温度は加
工熱により上昇して加工精度も向上する。FIG. 4 is a graph showing the relationship (test result) between the temperature of the water cooling jacket 13 and the change in processing accuracy of the semiconductor substrate. As shown in FIG. 4, at the start of processing, the entire surface plate is cooled to room temperature and the processing accuracy is poor. As the polishing processing is repeated, the temperature of the entire polishing surface plate is increased by the processing heat and the processing accuracy is also improved.
【0018】このテストでは従来通り室温約22℃の状
態で研磨布表面温度38℃になるように冷却水を制御し
てポリッシング加工を行った結果1バッチ〜6バッチま
では水冷ジャケット13の温度の上昇に伴なって加工精
度が良くなり6バッチ以降は水冷ジャケット13の温度
25.2〜25.5℃で加工精度4.00μmと安定す
ることがわかった。In this test, cooling water was controlled so that the surface temperature of the polishing cloth was 38 ° C. at room temperature of about 22 ° C., and polishing was performed as a result. As a result, the temperature of the water cooling jacket 13 was changed from 1 to 6 batches. It was found that as the temperature rises, the processing accuracy improves, and after 6 batches, the processing accuracy stabilizes at 4.02 μm at the temperature of the water cooling jacket 13 of 25.2 to 25.5 ° C.
【0019】すなわち6バッチ以降の加工において、加
工精度が安定する。その結果、水冷ジャケットの温度が
この温度になった時点で半導体基板のポリッシング加工
をした結果、高精度の加工を連続的に得ることができ
た。That is, the processing accuracy is stable in the processing after 6 batches. As a result, as a result of polishing the semiconductor substrate when the temperature of the water cooling jacket reached this temperature, highly accurate processing could be continuously obtained.
【0020】通常ターンテーブル12の表面形状は、こ
の安定した状態において、理想形状になるように材質の
違いや、大きさ等も考慮して凸形状若しくは凹形状また
はその他の形状に仕上げられている。Normally, the surface shape of the turntable 12 is finished in a convex shape, a concave shape, or another shape in consideration of the difference in material, size, etc. so as to be an ideal shape in this stable state. .
【0021】なお、本実施例では水冷ジャケットへの冷
却水の制御を電磁切換弁の例で説明したが流量調整弁に
することも可能である。In the present embodiment, the control of the cooling water to the water cooling jacket has been described with the example of the electromagnetic switching valve, but it is also possible to use a flow rate adjusting valve.
【0022】[0022]
【発明の効果】本発明は、以上の構成により、水冷ジャ
ケットの温度を測定して、この温度により水冷ジャケッ
トへの冷却水の制御を行うことで水冷ジャケットの表面
温度を一定に保持してターンテーブルの表面の曲率を一
定形状に安定して保持できる。そのため高精度のポリッ
シング加工が連続して、しかも安定して可能となった。
また、短時間にターンテーブルの表面形状を理想形状に
するために当初は冷却水の代りに温水を流し、その後所
定温度に温調することも可能となった。According to the present invention, with the above construction, the temperature of the water cooling jacket is measured, and the cooling water to the water cooling jacket is controlled by this temperature to keep the surface temperature of the water cooling jacket constant and turn the water cooling jacket. The curvature of the surface of the table can be stably maintained in a constant shape. Therefore, high-precision polishing can be performed continuously and stably.
Further, in order to make the surface shape of the turntable ideal in a short time, it was possible to initially flow hot water instead of cooling water and then adjust the temperature to a predetermined temperature.
【図1】本発明のポリッシング定盤の温度制御方法を示
す斜視図。FIG. 1 is a perspective view showing a method for controlling a temperature of a polishing surface plate of the present invention.
【図2】従来のポリッシング定盤の温度制御方法を示す
斜視図。FIG. 2 is a perspective view showing a conventional temperature control method for a polishing surface plate.
【図3】ポリッシング定盤の一部断面図。FIG. 3 is a partial cross-sectional view of a polishing platen.
【図4】水冷ジャケットの温度と加工精度の変化を示す
図。FIG. 4 is a diagram showing changes in temperature and processing accuracy of a water cooling jacket.
11 ポリッシング定盤 12 ターンテーブル 13 水冷ジャケット 14 研磨布 16 放射温度計 17 電磁開閉弁 18 コントローラ 11 Polishing surface plate 12 Turntable 13 Water cooling jacket 14 Polishing cloth 16 Radiation thermometer 17 Electromagnetic on-off valve 18 Controller
Claims (1)
る半導体基板用のポリッシング装置のポリッシング定盤
の温度制御方法において、前記水冷ジャケット部の温度
を測定し、この温度が所定の温度になるように水冷ジャ
ケットへの冷却水を制御して、前記ターンテーブル表面
の温度を一定にすることによりターンテーブル表面の曲
率を一定に保持することを特徴とするポリッシング定盤
の温度制御方法。1. A method of controlling a temperature of a polishing surface plate of a polishing apparatus for a semiconductor substrate, comprising a turntable and a water cooling jacket, the temperature of the water cooling jacket is measured, and the water cooling jacket is kept at a predetermined temperature. A method of controlling the temperature of a polishing surface plate, wherein the temperature of the surface of the turntable is controlled to be constant by controlling the cooling water to the surface of the turntable.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34495293A JPH07171759A (en) | 1993-12-20 | 1993-12-20 | Method for controlling temperature of polishing level block |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34495293A JPH07171759A (en) | 1993-12-20 | 1993-12-20 | Method for controlling temperature of polishing level block |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH07171759A true JPH07171759A (en) | 1995-07-11 |
Family
ID=18373267
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP34495293A Pending JPH07171759A (en) | 1993-12-20 | 1993-12-20 | Method for controlling temperature of polishing level block |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH07171759A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0894570A2 (en) * | 1997-07-30 | 1999-02-03 | Ebara Corporation | Method and apparatus for polishing |
WO2001072471A1 (en) * | 2000-03-29 | 2001-10-04 | Shin-Etsu Handotai Co.,Ltd. | Work holding panel for polishing, and device and method for polishing |
KR20180075669A (en) | 2015-12-18 | 2018-07-04 | 가부시키가이샤 사무코 | Wafer polishing method and polishing apparatus |
-
1993
- 1993-12-20 JP JP34495293A patent/JPH07171759A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0894570A2 (en) * | 1997-07-30 | 1999-02-03 | Ebara Corporation | Method and apparatus for polishing |
EP0894570A3 (en) * | 1997-07-30 | 2002-08-28 | Ebara Corporation | Method and apparatus for polishing |
WO2001072471A1 (en) * | 2000-03-29 | 2001-10-04 | Shin-Etsu Handotai Co.,Ltd. | Work holding panel for polishing, and device and method for polishing |
US6769966B2 (en) | 2000-03-29 | 2004-08-03 | Shin-Etsu Handotai Co., Ltd. | Workpiece holder for polishing, polishing apparatus and polishing method |
KR20180075669A (en) | 2015-12-18 | 2018-07-04 | 가부시키가이샤 사무코 | Wafer polishing method and polishing apparatus |
US10744616B2 (en) | 2015-12-18 | 2020-08-18 | Sumco Corporation | Wafer polishing method and apparatus |
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