JPH03173107A - Laminated ceramic capacitor - Google Patents

Laminated ceramic capacitor

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Publication number
JPH03173107A
JPH03173107A JP31273389A JP31273389A JPH03173107A JP H03173107 A JPH03173107 A JP H03173107A JP 31273389 A JP31273389 A JP 31273389A JP 31273389 A JP31273389 A JP 31273389A JP H03173107 A JPH03173107 A JP H03173107A
Authority
JP
Japan
Prior art keywords
loss tangent
dielectric loss
tangent tan
weight
parts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP31273389A
Other languages
Japanese (ja)
Inventor
Keisuke Shiono
啓祐 塩野
Yoshio Yokoe
横江 宣雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP31273389A priority Critical patent/JPH03173107A/en
Publication of JPH03173107A publication Critical patent/JPH03173107A/en
Pending legal-status Critical Current

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  • Ceramic Capacitors (AREA)
  • Inorganic Insulating Materials (AREA)

Abstract

PURPOSE:To obtain a laminated ceramic capacitor excellent in capacity per unit, dielectric loss tangent tan delta and temperature characteristics, small in size, large in capacity, and low in back height by composing it of high permittivity porcelain composition added to contain specific amounts of Nb2, O5, Gd2, O3 and ZnO to BaTiO3. CONSTITUTION:A laminated ceramic capacitor is composed of high permittivity by adding 1.45-1.6 pts.wt. of niobium pentoxide (Nb2O5), 0.2-0.4 pts.wt. of gadolinium oxide (Gd2O3) and 0.4-0.5 pts.wt. of zinc oxide (ZnO) to 100 pts.wt. of barium titanate (BaTiO3). BaTiO3 is a main content. The Nb2O5 has effects of enhancing its permittivity and reducing temperature change of the permittivity. The Gd2O3 enhances permittivity, controls dielectric loss tangent tan delta, further ZnO reduces dielectric loss tangent tan delta and reduces temperature change.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、単位当たりの容量値が大きく、さらに温度変
化に対する容量値の変化が小さなりi、層セラミックコ
ンデンサを提供するものであり、特にEIAJ(日本電
子機械工業会)のX7R特性を満足するものである。
[Detailed Description of the Invention] [Field of Industrial Application] The present invention provides a layered ceramic capacitor which has a large capacitance value per unit and also has a small change in capacitance value due to temperature changes. It satisfies the X7R characteristics of EIAJ (Electronic Machinery Industries Association of Japan).

〔従来の技術及びその問題点〕[Conventional technology and its problems]

高誘電率系磁器組成物は、積層セラミックコンデンサ等
の材料として使用される。昨今、積層コンデンサは、小
型化が進行する中で、他方では大容量化が強く求められ
ている。
High dielectric constant ceramic compositions are used as materials for multilayer ceramic capacitors and the like. Recently, while multilayer capacitors have been becoming smaller, there is also a strong demand for larger capacitance.

積層コンデンサの小型化に関して、組成上の重要な特性
としては、誘電率εrが大きいこと及び誘電正接tan
δが小さいことが挙げられる。
Regarding the miniaturization of multilayer capacitors, important compositional characteristics include a large dielectric constant εr and a high dielectric loss tangent tan.
One example is that δ is small.

特に、誘電正接tanδは積層コンデンサを製造するに
あたり、セラミックのグリーンシートの一枚の厚みに大
きく影響する。同時に誘電率εrが大きければ、小型で
大容量の積層コンデンサが達成されることになる。
In particular, the dielectric loss tangent tan δ greatly affects the thickness of one ceramic green sheet when manufacturing a multilayer capacitor. At the same time, if the dielectric constant εr is large, a compact multilayer capacitor with a large capacity can be achieved.

従来、B a T i O:IにNb、0.を添加した
誘電体磁器組成物として特公昭60−20849号公報
、特公昭61−20084号公報などが知られている。
Conventionally, Nb and 0.0% were added to B a T i O:I. Japanese Patent Publication No. 60-20849 and Japanese Patent Publication No. 61-20084 are known as dielectric ceramic compositions containing .

特公昭60−20849号公報によれば、BaTiO2
にN b z Os 、Ca 0% Z n Oを所定
量添加して、誘電正接tanδを0. 9%以下を達成
している。しかし、この系の誘電体組成物では、誘電率
εrがせいぜい2970程度であり、fFセラミックコ
ンデンサの単位当たりの容量は充分に大きいものが期待
できず、さらに−55℃〜125℃までの温度変化率が
±14%以内であり、EIAJのX7R特性は満足する
ももの、温度変化率が若干大きいものであった。
According to Japanese Patent Publication No. 60-20849, BaTiO2
A predetermined amount of N b z Os , Ca 0% Z n O is added to the dielectric loss tangent tan δ to 0. Achieved below 9%. However, in this type of dielectric composition, the dielectric constant εr is approximately 2970 at most, and a sufficiently large capacitance per unit of fF ceramic capacitor cannot be expected, and furthermore, it is difficult to expect a sufficiently large capacitance per unit of fF ceramic capacitor. The ratio was within ±14%, and the EIAJ X7R characteristics were satisfactory, but the temperature change rate was slightly large.

また、特公昭61−20084号公報によれば、BaT
iO3にNb2O5、Nd2O3、ZnOを所定量添加
して、誘電率εrを2500〜3800と高い誘電率を
達成している。しかし、積層セラミックコンデンサの単
位当たりの容量は0゜954nF/mn+”程度であり
、誘電正接tanδを1.9%と充分な小型、大容量の
積層コンデンサの達成が困難であった。
Also, according to Japanese Patent Publication No. 61-20084, BaT
By adding predetermined amounts of Nb2O5, Nd2O3, and ZnO to iO3, a high dielectric constant εr of 2500 to 3800 is achieved. However, the capacitance per unit of a multilayer ceramic capacitor is approximately 0.954 nF/mn+'', and it has been difficult to achieve a sufficiently small and large capacity multilayer capacitor with a dielectric loss tangent tan δ of 1.9%.

即ち、先行技術に示された誘電体磁器組成物では、高誘
電率で且つ小さな誘電正接tanδで、温度変化による
変化率が小さい小型、低背型の積層セラミックコンデン
サが得られなかった。
That is, with the dielectric ceramic composition shown in the prior art, it has not been possible to obtain a small, low-profile multilayer ceramic capacitor that has a high dielectric constant, a small dielectric loss tangent tan δ, and a small rate of change due to temperature changes.

本発明者らは上記欠点を解決した高誘電率系磁器組成物
を提供すべく鋭意研究を重ねた結果、チタン酸バリウム
に、五酸化ニオブ、酸化亜鉛、酸化ガドリウムを添加す
ることにより、−55〜125℃の広い範囲の温度範囲
にわたって容量の変化率が小さ((±10%以内)、誘
電正接tanδが小さく(積層セラミックコンデンサ時
に1゜9%未満)、さらに高い誘電率(単位当たり1゜
26 n F /m+g+” )を有する磁器組成物を
有する積層セラミックコンデンサを見出した。
The present inventors have conducted intensive research to provide a high dielectric constant ceramic composition that solves the above-mentioned drawbacks. As a result, by adding niobium pentoxide, zinc oxide, and gadolinium oxide to barium titanate, -55 The rate of change in capacitance is small (within ±10%) over a wide temperature range of ~125°C, the dielectric loss tangent tan δ is small (less than 1°9% for multilayer ceramic capacitors), and the dielectric constant is high (1° per unit). A multilayer ceramic capacitor having a ceramic composition having a magnetic flux of 26 n F /m+g+") has been found.

〔問題点を解決するための具体的な手段〕本発明が要旨
とするところは、チタン酸バリウム(BaTiO:1)
100重量部に対して、五酸化ニオブ(N b 2 o
s )が1.45〜1.6重量部、酸化ガドリウム(G
dz 03 )が0.2〜0゜4重量部、及び酸化亜鉛
(ZnO)が0.4〜0゜5重量部添加されて成る高誘
電率系磁器組成物で構成された積層セラミックコンデン
サにある。
[Specific means for solving the problem] The gist of the present invention is that barium titanate (BaTiO:1)
Niobium pentoxide (N b 2 o
s) is 1.45 to 1.6 parts by weight, gadolinium oxide (G
dz 03 ) and 0.2 to 0.4 parts by weight of zinc oxide (ZnO) and 0.4 to 0.5 parts by weight of zinc oxide (ZnO) are added. .

BaTiO3は主成分であり、Nb2O,は誘電率を高
め、且つ誘電率の温度変化を小さくする効果がある。ま
た、G d z O3は誘電率を高め、且つ誘電正接t
anδを制御する効果がある。さらにZnOは誘電正接
tanδを小さくし、温度変化を小さくする効果がある
BaTiO3 is the main component, and Nb2O has the effect of increasing the dielectric constant and reducing temperature changes in the dielectric constant. In addition, G d z O3 increases the dielectric constant and the dielectric loss tangent t
It has the effect of controlling anδ. Furthermore, ZnO has the effect of reducing the dielectric loss tangent tan δ and reducing temperature changes.

前記範囲内で組成を変化させることにより、積層セラミ
ックコンデンサの単位当たりの容量1゜15nF/關2
以上に、温度変化率が一55〜125℃にわたって±l
θ%以内に、誘電正接tanδを1.9未満の誘電体磁
器組成物を有する積層セラミックコンデンサが提供でき
ることになる。
By changing the composition within the above range, the capacitance per unit of the multilayer ceramic capacitor can be increased to 1°15nF/2.
Above, the temperature change rate is ±l over the range of 155 to 125℃.
A multilayer ceramic capacitor having a dielectric ceramic composition with a dielectric loss tangent tan δ of less than 1.9 can be provided within θ%.

次に、Nbz Os 、Gdz 03及びZnOの限定
理由を説明する。
Next, the reason for limiting Nbz Os, Gdz 03, and ZnO will be explained.

BaTiOzに添加されるNbzOs及びZnOが増加
すれば、BaTiO3の相対量が減少し、単位当たりの
容量が低下する。しかし、Gd、03に関しては単位当
たりの容量を上げる効果がある。
As NbzOs and ZnO added to BaTiOz increase, the relative amount of BaTiO3 decreases and the capacity per unit decreases. However, Gd,03 has the effect of increasing the capacity per unit.

NbzOsの添加量を増加すると単位当たりの容量が小
さくなり、1.6重量部を越えると単位当たりの容量1
.15nF/mm”以下となってしまう。また、逆にN
b、O5の添加量を減少すると、誘電正接tanδが1
.9%以上と大きくなるとともに、容量の温度変化率が
大きくなってしまう。即ち、1.3重量部未満では、誘
電正接tanδが2.03%前後に大きくなり、さらに
温度変化率が−15,2%と2桁となってしまう。
As the amount of NbzOs added increases, the capacity per unit decreases, and when it exceeds 1.6 parts by weight, the capacity per unit decreases by 1.
.. 15nF/mm" or less. Also, conversely, N
b. When the amount of O5 added is decreased, the dielectric loss tangent tan δ becomes 1
.. As the ratio increases to 9% or more, the rate of change in capacitance with temperature increases. That is, if the amount is less than 1.3 parts by weight, the dielectric loss tangent tan δ increases to around 2.03%, and the temperature change rate becomes -15.2%, which is two digits.

GdZO3’の添加量を増加すると、相対的にBaTi
O3が減少するものの、誘電率は維持または向上させ、
0.6重量部を越えると、誘電正接tanδ及び温度変
化率が−11,2%と2桁となってしまう。逆にGdz
C)tの添加量を減少すると、単位当たりの容量の低下
していまう。即ち、0.2重量部未満では、単位当たり
の容量が1゜107nF/關2となってしまう。
When the amount of GdZO3' added increases, relatively BaTi
Although O3 decreases, the dielectric constant is maintained or improved,
If it exceeds 0.6 parts by weight, the dielectric loss tangent tan δ and the temperature change rate will be -11.2%, which is two digits. On the contrary, Gdz
C) If the amount of t added is reduced, the capacity per unit will decrease. That is, if the amount is less than 0.2 parts by weight, the capacitance per unit will be 1°107 nF/2.

ZnOの添加量を増加すると、誘電正接tanδが小さ
くなるももの、0.5重量部を越えると、単位当たりの
容量が低下してし゛まう。また逆に、ZnOの添加量を
減少すると、誘電正接tanδが1.98%と著しく大
きくなる。
As the amount of ZnO added increases, the dielectric loss tangent tan δ decreases; however, if it exceeds 0.5 parts by weight, the capacity per unit decreases. Conversely, when the amount of ZnO added is reduced, the dielectric loss tangent tan δ increases significantly to 1.98%.

〔実施例〕〔Example〕

次に、本発明を実施例に従ってさらに具体的に説明する
Next, the present invention will be explained in more detail according to examples.

出発材料として、シュウ酸バリウム午タンを、加熱焼成
し、チタン酸バリウムの粉末を得た。このチタン酸バリ
ウム100重量部に対してNb2O5、G d 203
及びZnOの各粉末を第1表に示す配合比になるように
秤量し、ボールミルにて20時時間式粉砕した後、有機
系粘結剤を添加し、しかる後攪拌、ドクターブレード法
で厚さ30μmのテープに成型した。このテープにコン
デンサ内部電極としてPd−Ag (70: 30)を
印刷して、複数枚積層して、熱圧着する。さらに該積層
体を直径20mmの円板状に打ち抜き、脱バインダーを
行い、酸素雰囲気にて1250℃で2゜5時間焼成した
。さらに両端面に銀ペーストによる外部電極を焼きつけ
試料とした。
As a starting material, barium oxalate was heated and calcined to obtain barium titanate powder. Nb2O5, G d 203 for 100 parts by weight of this barium titanate
and ZnO powders were weighed so as to have the compounding ratio shown in Table 1, and after pulverizing in a ball mill for 20 hours, an organic binder was added, and then stirred, and the thickness was determined by the doctor blade method. It was molded into a 30 μm tape. Pd-Ag (70:30) is printed on this tape as a capacitor internal electrode, and a plurality of tapes are laminated and bonded by thermocompression. Further, the laminate was punched into a disc shape with a diameter of 20 mm, the binder was removed, and the disc was fired for 2.5 hours at 1250° C. in an oxygen atmosphere. Furthermore, external electrodes made of silver paste were baked on both end faces to prepare a sample.

このように形成された試料について、誘電率εr及び誘
電正接tanδを基準温度25℃、周波数1、QkHz
、測定電圧1.OVrmsで測定した。
For the sample formed in this way, the dielectric constant εr and the dielectric loss tangent tan δ were determined at a reference temperature of 25°C, frequency of 1, and QkHz.
, measurement voltage 1. Measured by OVrms.

その結果を表1に示す。試料番号に*印を付したものは
本発明の範囲外である。尚、表中、BaT i O:l
を単にB T、 N b z Osを単にNb、Gd2
O3を単にGd及びZnOを単にZnと表記した。
The results are shown in Table 1. Sample numbers marked with * are outside the scope of the present invention. In addition, in the table, BaT i O:l
simply B T, N b z Os simply Nb, Gd2
O3 was simply written as Gd, and ZnO was simply written as Zn.

そして本発明の範囲の評価として、単位当たりの容量は
1.15nF≠ 即ち、単位当たりの容量は1.15nF/m+w2では
、充分な容量がが得れず、これにより積層コンデンサの
小型化が困難となってしまう。
As an evaluation of the scope of the present invention, the capacitance per unit is 1.15nF≠ In other words, if the capacitance per unit is 1.15nF/m+w2, sufficient capacitance cannot be obtained, and this makes it difficult to miniaturize multilayer capacitors. turn into.

また、誘電正接tanδは1.9%未満を良品とした。Moreover, a dielectric loss tangent tan δ of less than 1.9% was considered to be a good product.

即ち、低背型のmEセラミックコンデンサを形成しよう
とすると、誘電体シート層の薄膜化が必要となるが、こ
れには、誘電正接tanδが1゜9%未満が必要となる
That is, in order to form a low-profile mE ceramic capacitor, it is necessary to reduce the thickness of the dielectric sheet layer, which requires a dielectric loss tangent tan δ of less than 1°9%.

また、温度変化に対する容量値の変化率は±10%以内
を良品とした。容量値の変化率は±10%を越えると、
EIAJのX7RHの温度特性のひとつであるTC−V
C(定格電圧の50%の直流電圧を印加した時の温度特
性)が−40%〜15%以内を充分満足することが困難
となる。
In addition, the rate of change in capacitance value with respect to temperature change was considered to be a good product if it was within ±10%. When the rate of change in capacitance value exceeds ±10%,
TC-V, one of the temperature characteristics of EIAJ's X7RH
It becomes difficult to fully satisfy C (temperature characteristics when applying a DC voltage of 50% of the rated voltage) within -40% to 15%.

(以下、余白) 試料番号1〜4は高誘電率系磁器の主成分となるBaT
iOsに添加するN b z Osの添加量を検討した
。即ち、N b 2 OSを1.3重量部から1.75
重量部まで変化させた。この時、G d zO3及びZ
nOの重量部を夫々0. 4重量部、0゜5重量部に固
定した。これは後述の夫々の添加量で本発明の範囲の中
心的な値となるものである。
(Hereinafter, blank space) Sample numbers 1 to 4 are BaT, which is the main component of high dielectric constant porcelain.
The amount of N b z Os added to iOs was studied. That is, from 1.3 parts by weight to 1.75 parts by weight of N b 2 OS
Even the parts by weight were changed. At this time, G d zO3 and Z
The weight part of nO was 0. They were fixed at 4 parts by weight and 0° and 5 parts by weight. This is a central value within the range of the present invention in each addition amount described below.

試料番号1 (Nbz Os : 1. 3重量部)で
は、単位当たりの容量は比較的良好な結果となるものの
、誘電正接tanδが2.0%を越え、さらには容量の
温度変化率が±10%を越えて、−15゜2%(85℃
)となってしまう。
In sample number 1 (NbzOs: 1.3 parts by weight), although the capacitance per unit was relatively good, the dielectric loss tangent tan δ exceeded 2.0%, and furthermore, the temperature change rate of the capacitance was ±10%. %, -15°2% (85°C
).

また、試料番号2〜3 (Nb20S  : 1− 4
5〜1.6重量部)では、単位当たりの容量が1゜15
 n F /mm2以上、誘電正接tanδが1.9%
以下、温度変化率が±lO%未満となり、EIAJのX
7R特性を満足する小型、大容量の積層コンデンサが達
成できる。
In addition, sample numbers 2 to 3 (Nb20S: 1-4
5 to 1.6 parts by weight), the capacity per unit is 1°15
n F /mm2 or more, dielectric loss tangent tan δ is 1.9%
Below, the temperature change rate is less than ±lO%, and the EIAJ
A small, large-capacity multilayer capacitor that satisfies the 7R characteristics can be achieved.

試料番号4 (Nb20s  : 1.75重量部)で
は誘電正接tanδが比較的良好な結果となるものの、
単位当たりの容量がL  15 n F /IIIm”
以下の1.096F/+n+w”以下となる。
Sample number 4 (Nb20s: 1.75 parts by weight) gave a relatively good result for the dielectric loss tangent tan δ, but
Capacity per unit is L 15 n F /IIIm”
The value is 1.096F/+n+w" below.

従って、本発明のBaTiO3に、Nb2O5の添加量
を増加すれば、単位当たりの容量がが低下してしまう。
Therefore, if the amount of Nb2O5 added to BaTiO3 of the present invention is increased, the capacity per unit will decrease.

またN b 20 sの添加量を減少しても誘電正接t
anδが1.9%及び温度変化率が大きくなる。結局、
Nb2O5の添加量は1.45量部から1.6重量部の
範囲とした。
Furthermore, even if the amount of N b 20 s added is decreased, the dielectric loss tangent t
an δ is 1.9% and the temperature change rate is large. in the end,
The amount of Nb2O5 added was in the range of 1.45 parts by weight to 1.6 parts by weight.

試料番号5〜7.2は高誘電率系磁器の主成分となるB
aTiO:sに添加するGd203の添加量を検討した
。即ち、G d z O3を0. 2重量部から0.6
重量部まで変化させた。この時、Nb2 os及びZn
Oの重量部を夫々1.45重量部、0.5重量部に固定
した。
Sample numbers 5 to 7.2 are B, which is the main component of high dielectric constant porcelain.
The amount of Gd203 added to aTiO:s was investigated. That is, G d z O3 is 0. 2 parts by weight to 0.6
Even the parts by weight were changed. At this time, Nb2 os and Zn
The parts by weight of O were fixed at 1.45 parts by weight and 0.5 parts by weight, respectively.

試料番号5 CGdz 03 : 0.1重量部)では
誘電正接tanδ及び温度変化率が比較的良好な結果と
なるものの、単位当たりの容量が1.15nF/w+m
”以下となってしまう。
Sample number 5 (CGdz 03: 0.1 part by weight) gave relatively good results in dielectric loss tangent tan δ and temperature change rate, but the capacitance per unit was 1.15 nF/w + m.
“It will be less than that.

また、試料番号6.2 (Gdz O:i : 0. 
2〜0.4重量部)では、単位当たりの容量が1. 1
5nF/mm”以上、誘電正接tanδが1.9%以下
、温度変化率が±10%未満となり、EIAJのX7R
特性を満足する小型、大容量の積層コンデンサが達成で
きる。
In addition, sample number 6.2 (Gdz O:i: 0.
2 to 0.4 parts by weight), the capacity per unit is 1. 1
5nF/mm" or more, dielectric loss tangent tan δ is 1.9% or less, temperature change rate is less than ±10%, and EIAJ's X7R
A small, large-capacity multilayer capacitor that satisfies the characteristics can be achieved.

試料番号7 (caz O:l : 0. 6重量部)
では単位当たりの容量が良好な結果となるものの、誘電
正接tanδが1.9%以上、温度変化率が±10%を
越えてしまう。
Sample number 7 (caz O:l: 0.6 parts by weight)
Although this results in a good capacitance per unit, the dielectric loss tangent tan δ exceeds 1.9% and the temperature change rate exceeds ±10%.

従って、本発明のB a T i O3に添加するGd
2O3を増加すれば、相対的にBaTiO3が減少する
ことと逆行し、単位当たりの容量がが維持又は増加する
ももの、誘電正接tanδが大きくなる。また、また添
加量を減少すれば、単位当たりの容量が1 15nF/
關2以下となる。結局、Gd、03の添加量は、0.2
重量部から0. 4重量部の範囲°とした。
Therefore, Gd added to B a T i O3 of the present invention
Increasing 2O3 goes against the relative decrease in BaTiO3, maintains or increases the capacitance per unit, and increases the dielectric loss tangent tan δ. Also, if the amount added is reduced, the capacitance per unit will be 1-15nF/
It will be 2 or less. In the end, the amount of Gd,03 added is 0.2
0.0 from weight part. The range was 4 parts by weight.

試料番号8〜11は高誘電率系磁器組成物の主成分とな
るBaTiO3に添加するZnOの添加量を検討した。
For sample numbers 8 to 11, the amount of ZnO added to BaTiO3, which is the main component of the high dielectric constant ceramic composition, was investigated.

即ち、ZnOを0から0.6重量部まで変化させた。こ
の時、NbzOs及びGd2O3の重量部を夫々1.6
重量部、0. 2重量部に固定した。
That is, the amount of ZnO was varied from 0 to 0.6 parts by weight. At this time, the weight parts of NbzOs and Gd2O3 were each 1.6
Part by weight, 0. The amount was fixed at 2 parts by weight.

試料番号8 (ZnO: 0.3重量部)では単位当た
りの容量及び温度変化率が比較的良好な結果となるもの
の、誘電正接tanδが1.98%と1゜9%を越えて
しまう。
Sample No. 8 (ZnO: 0.3 parts by weight) yields relatively good capacitance per unit and temperature change rate, but the dielectric loss tangent tan δ is 1.98%, exceeding 1°9%.

また、試料番号9.10 (ZnO: 0. 4〜0゜
5重量部)では、単位当たりの容量が1.268F/m
s”以上、誘電正接tanδが1.72%以下、温度変
化率が±10%未満となり、EIAJのX7R特性を満
足する小型、大容量の積層コンデンサが達成できる。
In addition, for sample number 9.10 (ZnO: 0.4 to 0.5 parts by weight), the capacity per unit was 1.268F/m
s'' or more, the dielectric loss tangent tan δ is 1.72% or less, the temperature change rate is less than ±10%, and a small, large-capacity multilayer capacitor that satisfies EIAJ's X7R characteristics can be achieved.

試料番号11 (ZnO: O,、6重量部)では誘電
正接tanδ及び温度変化率が良好な結果が得られるも
のの、単位当たりの容量が1.008nF/rsya”
と1. 15nF/mn+”以下となってしまう。
Sample No. 11 (ZnO: O, 6 parts by weight) gave good results in terms of dielectric loss tangent tan δ and temperature change rate, but the capacitance per unit was 1.008 nF/rsya.”
and 1. It becomes less than 15nF/mn+''.

従って、本発明のBaTiO3に添加するZnOの添加
量を増加すれば、誘電正接tanδが小さ。
Therefore, if the amount of ZnO added to BaTiO3 of the present invention is increased, the dielectric loss tangent tan δ becomes smaller.

くなる傾向にあるものの、単位当たりの容量が低下させ
てしまう。添加量を減少すれば、誘電正接tanδが大
きくなる傾向にある。結局、ZnOの添加量は、0.3
〜0.5重量部のN囲とした。
However, the capacity per unit decreases. If the amount added is reduced, the dielectric loss tangent tan δ tends to increase. In the end, the amount of ZnO added was 0.3
The N range was ~0.5 parts by weight.

以上のように、本発明によれば、単位当たりの容量が1
. 15 n F/mm2以上となり、また、誘電正接
tanδが1.9%未満となり、広い温度範囲において
も容量変化の少ない、即ちX7R特性に優れた積層セラ
ミックコンデンサが達成できる。
As described above, according to the present invention, the capacity per unit is 1
.. 15 n F/mm2 or more, and the dielectric loss tangent tan δ is less than 1.9%, making it possible to achieve a multilayer ceramic capacitor with little capacitance change even in a wide temperature range, that is, excellent X7R characteristics.

尚、上述の本発明の範囲で上述の試料以外に種々組み合
わせても、単位当たりの容量が1.15nF/++++
++2以上、誘電正接tanδが1.9%未満、温度変
化(−55〜125℃)に対する容量値の変化が±10
%以内となることを確認した。
In addition, even if various combinations other than the above-mentioned samples are made within the scope of the present invention, the capacitance per unit is 1.15nF/++++
++2 or more, dielectric loss tangent tan δ less than 1.9%, capacitance value change with temperature change (-55 to 125°C) ±10
It was confirmed that it was within %.

このように、特に誘電正接tanδが1.9%未満の積
層セラミックコンデンサは、積層するシートを厚み30
μm未満で作成可能となり、低背型の積層セラミックコ
ンデンサが達成できる。
In this way, especially for multilayer ceramic capacitors with a dielectric loss tangent tan δ of less than 1.9%, the thickness of the laminated sheets is 30%.
It can be manufactured with a thickness of less than μm, and a low-profile multilayer ceramic capacitor can be achieved.

〔発明の効果〕〔Effect of the invention〕

以上のように、本発明によれば、単位当たりの容量、誘
電正接tanδ及び温度特性に優れ、小型、太古で且つ
低背型の積石セラミックコンデンサとなる。
As described above, according to the present invention, a small, ancient, and low-profile stacked stone ceramic capacitor with excellent per unit capacity, dielectric loss tangent tan δ, and temperature characteristics is obtained.

Claims (1)

【特許請求の範囲】 BaTiO_3100重量部に対して、 Nb_2O_5が1.45〜1.6重量部、Gd_2O
_3が0.2〜0.4重量部、 ZnOが0.4〜0.5重量部添加されて成る高誘電率
系磁器組成物で構成された積層セラミックコンデンサ。
[Claims] Based on 100 parts by weight of BaTiO_3, 1.45 to 1.6 parts by weight of Nb_2O_5 and Gd_2O
A multilayer ceramic capacitor made of a high dielectric constant ceramic composition to which 0.2 to 0.4 parts by weight of _3 and 0.4 to 0.5 parts by weight of ZnO are added.
JP31273389A 1989-11-30 1989-11-30 Laminated ceramic capacitor Pending JPH03173107A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31273389A JPH03173107A (en) 1989-11-30 1989-11-30 Laminated ceramic capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31273389A JPH03173107A (en) 1989-11-30 1989-11-30 Laminated ceramic capacitor

Publications (1)

Publication Number Publication Date
JPH03173107A true JPH03173107A (en) 1991-07-26

Family

ID=18032770

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31273389A Pending JPH03173107A (en) 1989-11-30 1989-11-30 Laminated ceramic capacitor

Country Status (1)

Country Link
JP (1) JPH03173107A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7468112B2 (en) 2001-04-18 2008-12-23 Denso Corporation Method of producing a ceramic laminate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7468112B2 (en) 2001-04-18 2008-12-23 Denso Corporation Method of producing a ceramic laminate

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