JPH03158467A - Continuous film forming device - Google Patents

Abstract

PURPOSE:To prevent the generation of cracking at the time of film formation by providing a heating means just behind a film forming region to relieve the abrupt temp. change of a traveling long-sized substrate right after the film formation at the time of depositing the thin film by evaporation on the substrate. CONSTITUTION:The long-sized substrate 11 is made to travel along a can 12 set at a prescribed temp. and the fine particles 16 from an evaporating source 15 are deposited by evaporation in the film forming region 13 via the aperture of a mask 18, by which the film formation is executed. The heating means 14 (lamp or the like) is provided just behind the film forming region 13 to form a heating region 17 of the heating intensity smaller than the intensity of the thermal load which the substrate 11 receives. The temp. of the substrate 11 increased by the thermal load at the time of the film formation is gradually lowered down to the can temp. in this way, by which the generation of the cracking in the film is prevented and the film having the high degree of perfection is continuously formed.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a continuous film forming apparatus for forming a thin film by attaching fine particles from a fine particle generation source to a continuously moving substrate. However, conventional technology generally does not allow for continuous film deposition on moving substrate materials.
The configuration shown in Fig. 4 is used.A The substrate 2 (a) that comes out of the unwinding roller 1 contacts a rotating cylindrical substrate holder 3 (hereinafter referred to as a can) that is kept at a predetermined temperature Tc and reaches a predetermined position. The particles 8 that fly from the particle generation source 7 (hereinafter referred to as evaporation source) pass through the mask opening area 6 of the mask 5 and are continuously deposited on the surface of the substrate 2 in the film forming area 9. And the film-formed substrate 2
The problem to be solved by the invention is that the substrate 21 is taken up by the take-up roller 4. When the substrate 21 comes into contact with the can 3, it is immediately heated to the can temperature Tc. As shown in Figure 5, there is contact thermal resistance between the areas.
In the film forming area 9, the temperature of the substrate 2 rises from the can temperature Tc to the maximum temperature Tmax during film forming. In order to escape, he descends rapidly, but as a result,
Although cracks may occur in the film formed on the substrate 2, the present invention takes this into consideration and provides a film forming manufacturing apparatus that continuously forms a highly complete film without cracks. Means for Solving the Problems Invention 1 In order to solve the above problems, there is provided a means for moving a long substrate, and a means for scattering fine particles toward the long substrate. A particulate generation source for forming a thin film, a mask disposed between the substrate and the particulate source and having an opening that limits a range through which the particulates pass, and a film forming method in which the particulates adhere to the substrate through the opening. According to the present invention, with the above structure, in the film forming area, the temperature of the substrate increased due to the thermal load during film forming is increased. Since the temperature can be gradually lowered to the can temperature, the occurrence of cracks can be prevented.
A schematic diagram of this embodiment is shown in FIG. Film forming area 1 where a film is formed on the surface of the substrate 11
A heating means 14 is provided immediately after the heating means 3. The heating area 17 by the resistive heating means 14 is continuous with the film forming area 13.

Although a similar effect can be obtained by using a lamp other than the lamp as the heating means 14, such as infrared heat, electron beam, ion beam, etc. , the heat load that the substrate 11 receives (the energy possessed by the particles and the evaporation source 1
Figure 3 shows the results of a simulation of changes in substrate temperature during film formation according to this example. show.

If heating is not performed by the heating means, there will be a rapid temperature drop as shown by the curved line (if heating is performed, the temperature drop will be moderated in the heating region B as shown by the curve E). Also, if the film forming area A and the heating area B are even slightly separated, the substrate material 11 will experience the steepest temperature change immediately after the film forming area A. Therefore, the film forming area A will experience the steepest temperature change. It is better to place the heating area B and the heating area B adjacent to each other.

Next, another embodiment of the present invention will be explained with reference to FIG. 2. Substrate i t <t Can 12 set at a predetermined temperature
Even when traveling along the evaporation source 1 in the film forming area 13,
16 pieces of fine particles flying from No. 5 are formed into a film on the surface of the substrate 11. Heating means 14 immediately after the film forming area 13
The heating means 14 includes a plurality of heating sources 14a.
S 14b, 14c tl, 14a,
14b and 14c, the heating intensity is weakened in the order of 14b and 14c. Curve F in FIG.
Furthermore, it is possible to achieve a more gradual temperature drop, and the limit for crack occurrence (9), which varies depending on the properties of the film being formed. Effects of the Tonamo Invention The present invention makes it possible to eliminate rapid temperature changes in the substrate material immediately after film formation, thereby eliminating the occurrence of cracks during film formation and producing highly complete films. It is possible to form a film continuously.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram of an embodiment of the present invention. FIG. 2 is a schematic diagram of another embodiment of the present invention. FIG. 3 is a summary of the temperature characteristics of the substrate material of the present invention. Figure 11: Substrate 12: Can 13: Film forming area 14: Heating hand & 1
5...Evaporation claw 16...Fine particles, 17...Heating temperature rise

Claims (3)

[Claims] (1) means for causing the substrate to travel; a particle generation source for scattering particles toward the substrate to form a thin film on the substrate; A continuous film forming apparatus comprising: a mask having an opening that limits a range through which particles pass; and heating means for heating the substrate adjacent to a film forming area where the fine particles adhere to the substrate through the opening. . (2) The continuous film forming apparatus according to claim 1, wherein the heating intensity of the heating means is smaller than the intensity of the heat load that the substrate receives in the film forming area. (3) The continuous film forming apparatus according to claim 1, further comprising a heating means whose heating intensity decreases as the distance from the film forming area increases.