JPH0625869A - Method for growing thin film and device for growing thin film - Google Patents

Abstract

PURPOSE:To provide the method for forming thin films of ceramics, etc., at a high rate of covering the rugged parts of a substrate with decreased film defects and the device for forming the thin films. CONSTITUTION:The constitution which is provided with an attraction electrode 10 near the substrate 3 and is disposed with a fine particle ejection port 4 away from the substrate 3 is adopted. The attraction electrode 10 is formed to a grid so that the fine particles 6 attracted thereto are able to arrive at the substrate 3 by passing the attraction electrode 10. The fine particles 6 are accelerated by an electric field and large kinetic energy is obtd. by such constitution. Consequently, the fine particles 6 arriving at the substrate 3 stick uniformly even to the rugged parts of the substrate 3; in addition, the coarse particles 5 which are the cause for defects are dropped by their own weight before arriving at the substrate 3 and, therefore, the ceramic thin films having the decreased defects are obtd.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film growth method and a thin film growth apparatus for ceramics or the like having electrodes for suction or filters, which are effective for thin film growth excellent in uniformity and coverage.

[0002]

2. Description of the Related Art In recent years, research and development have been advanced to grow a ceramic thin film to realize a new function. For this kind of thin film growth, sputtering or MOCVD is used.
Method has been mainly used, but from the viewpoint of excellent controllability of the stoichiometric composition of the film, the fine particles having the same composition of the thin film are attached to the substrate and thinned after heat treatment. Attempts to do so have attracted attention. Conventionally, this type of growth apparatus generally has a configuration as shown in FIG.
In FIG. 2, 1 is a microparticulation chamber, 2 is a growth chamber, 3 is a substrate, 4 is an ejection port, 5 is coarse particles, 6 is fine particles, 7 is an exhaust pump, and 8 is a carrier gas. The configuration will be described below with reference to the drawings.

As shown in the figure, the apparatus comprises a microparticulation chamber 1,
It is composed of a growth chamber 2 for introducing a atomized thin film source from a jet port 4 to grow a thin film on a substrate 3. The fine particles 6 introduced into the growth chamber 2 float in the growth chamber 2 and then adhere to the substrate 3 to be deposited. Substrate 3 after being deposited to a predetermined thickness
Is annealed at a high temperature to crystallize into a ceramic thin film.

[0004]

In such a conventional thin film growth apparatus, the fine particles 6 are made to reach the substrate 3 by using only the kinetic energy when the fine particles 6 are ejected to the growth chamber 2, and the surface of the substrate 3 is reached. The spout 4 is attached to the substrate 3 for attachment.
It had to be installed nearby. As a result, as shown in FIG. 3, the coarse particles 5 having a large particle size which may become a defect during film formation.
In addition to the risk of adhering to the surface of the substrate 3, it adheres to the surface of the substrate 3 in a free movement, so that it is difficult to secure the coverage at the uneven portion 9 of the surface and the uniformity over the entire surface of the substrate 3. There were challenges.

The present invention is intended to solve the above problems, and an object of the present invention is to provide a thin film growth apparatus capable of obtaining a ceramic thin film having few defects in the film and excellent in coverage and uniformity of uneven portions. Is.

[0006]

In order to achieve the above object, the present invention provides a fine particle suction electrode in the vicinity of a substrate in a growth chamber, and prevents ejected fine particles from directly jumping to the substrate surface in the growth chamber. The configuration is such that the ejection port is deviated from the substrate.

[0007]

According to the present invention, since the fine particles are accelerated by the attracting electric field and the kinetic energy is increased by the above-described structure, the coverage on the uneven portion of the substrate is improved, and the fine particles are attracted to the vicinity of the substrate by the attracting electric field. The fine particle ejection port can be separated from the substrate, and the adhesion of coarse particles, which causes film defects, can be avoided.

[0008]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIG. In FIG. 1, the same parts as those in FIG. 2 of the conventional example are denoted by the same reference numerals and the description thereof will be omitted. That is, the feature of the present invention is that the grid-shaped suction electrode 10 is arranged near the substrate 3, and the ejection port 4 is arranged so as to form an angle of 90 degrees with respect to the substrate 3.

In the growth, the fine particles 6 generated in the fine particle forming chamber 1 are sucked and ejected through the ejection port 4 into the decompressed growth chamber 2. Most of the fine particles 6 are charged due to collision mutual friction when the fine particles 6 are formed and when the fine particles 6 exit from the ejection port 4. A voltage having a polarity opposite to the charge of the fine particles 6 is applied to the suction electrode 10 to suck the jetted fine particles 6 to the substrate 3. The charge polarity of the fine particles 6 can be determined by whether they are attracted to the suction electrode 10 or repelled. As described above, the reason why the attraction electrode 10 is used and the voltage is not directly applied to the substrate 3 is that when a thin film is grown on the semiconductor integrated circuit substrate, there is a risk of damage to the integrated circuit due to application of a high voltage. The suction electrode 10 is used for the purpose of avoiding such a danger.

Coarse particles 5 emitted from the jet port 4 are
Does not jump directly onto the substrate 3 because it does not face the substrate 3, and even if it approaches the vicinity of the substrate 3 due to the attracting electric field, it drops due to its large weight and reaches the substrate 3. do not do. As a result, the occurrence of film defects due to the coarse particles 5 can be suppressed to an extremely low level.

A part of the sucked fine particles 6 is adsorbed to the suction electrode 10, but most of them can reach the substrate 3 by making the shape of the suction electrode 10 into a grid.
Since the fine particles 6 are accelerated by the electric field, they have a large kinetic energy and diffuse on the surface of the fine particles 6 even after they are attached to the substrate 3.
It is possible to improve the coverage by wrapping around in uneven parts. Further, since the collision energy with respect to the substrate 3 is large, it has the advantage that it is also highly adherent to the substrate 3.

As described above, according to the ceramic thin film growth apparatus of the embodiment of the present invention, it is possible to grow a ceramic thin film having a small number of defects due to the action of the attracting electric field and a high coverage of the uneven portion.

[0013]

As is apparent from the above embodiments, according to the present invention, a large kinetic energy can be given to fine particles by arranging a suction electrode and applying a fine particle suction voltage thereto, as a result. It is possible to grow a film with good coverage, good adhesion, and excellent adhesion to the substrate.
Furthermore, since adhesion of coarse particles can be suppressed, it is possible to provide a thin film growth method and a thin film growth apparatus capable of greatly reducing defects in the film.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram of a thin film growth apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic configuration diagram of a conventional thin film growth apparatus.

FIG. 3 is a schematic diagram showing a process in which fine particles adhere to the substrate in FIG.

[Explanation of symbols]

 1 Micronization chamber 2 Growth chamber (thin film growth chamber) 3 Substrate 4 Jet port 5 Coarse particles 6 Fine particles 7 Exhaust pump 8 Carrier gas 10 Suction electrode (grid-shaped electrode)

Front page continued (72) Inventor Yasuhiro Uemoto 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electronics Industrial Co., Ltd. Inventor Akihiro Matsuda 1006 Kadoma, Kadoma-shi, Osaka Prefecture Matsushita Electronics Industrial Co., Ltd.

Claims (4)

[Claims] 1. A raw material for a thin film is made into fine particles, the fine particles are charged and ejected into a thin film growth chamber, and a grid-shaped electrode provided in the vicinity of the substrate in the thin film growth chamber is opposite to the charged electric charge of the fine particles. A thin film growth method comprising forming a thin film by applying a polar voltage to attract the fine particles and adhering the fine particles that have passed through the grid-shaped electrode to the surface of the substrate. 2. The thin film growth method according to claim 1, wherein when the fine particles are charged and ejected into the thin film growth chamber, the ejection direction is deviated from the substrate surface. 3. A thin film growth apparatus comprising at least a atomization chamber having an ejection port for charged fine particles which is a raw material for a thin film, and a grid-shaped electrode provided in the vicinity of a substrate installation portion in the thin film growth chamber. . 4. The thin film growth apparatus according to claim 3, wherein the ejection port of the charged fine particles is directed in a direction deviated from the surface of the substrate.