JPH03149803A - Method of forming thick film resistor - Google Patents
Method of forming thick film resistorInfo
- Publication number
- JPH03149803A JPH03149803A JP1289751A JP28975189A JPH03149803A JP H03149803 A JPH03149803 A JP H03149803A JP 1289751 A JP1289751 A JP 1289751A JP 28975189 A JP28975189 A JP 28975189A JP H03149803 A JPH03149803 A JP H03149803A
- Authority
- JP
- Japan
- Prior art keywords
- cured
- thick film
- resistor
- resin
- film resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 12
- 229920005989 resin Polymers 0.000 claims abstract description 18
- 239000011347 resin Substances 0.000 claims abstract description 18
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 9
- 239000011230 binding agent Substances 0.000 claims abstract description 7
- 230000009477 glass transition Effects 0.000 claims abstract description 7
- 238000007639 printing Methods 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 7
- 239000004020 conductor Substances 0.000 abstract description 6
- 239000002904 solvent Substances 0.000 abstract description 5
- 239000003822 epoxy resin Substances 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 abstract description 3
- 229920000647 polyepoxide Polymers 0.000 abstract description 3
- 239000003795 chemical substances by application Substances 0.000 abstract description 2
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 abstract description 2
- 239000006229 carbon black Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 13
- 238000001723 curing Methods 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 2
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 2
- 229940088601 alpha-terpineol Drugs 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000004570 mortar (masonry) Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、樹脂、金属ベース、アルミナ等の回路基板上
に厚膜抵抗体を形成する方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of forming a thick film resistor on a circuit board made of resin, metal base, alumina, etc.
樹脂基板、金属ベース基板、アルミナ等の基板上に、抵
抗体を形成する方法として、
■基板上に張り合わせた銅等の金属箔をエッチングして
電極を形成したり、Ｐｄ−Ａｇ等の導体ペーストを印刷
、次いで焼成して回路基板を作成する。特に電極に銅が
用いられる場合は、電極と抵抗体との接続を確実にする
ため、それらの間に、導体ペーストを用いて第二次の電
極を形成する場合もある。Methods for forming resistors on substrates such as resin substrates, metal base substrates, and alumina include forming electrodes by etching metal foil such as copper laminated on the substrate, and conductive paste such as Pd-Ag. is printed and then fired to create a circuit board. Particularly when copper is used for the electrodes, in order to ensure the connection between the electrodes and the resistor, a secondary electrode may be formed between them using a conductive paste.
■抵抗体粉末、バインダーとして熱硬化性樹脂、その他
溶媒等を含んだ抵抗ペーストを用いて印刷、硬化させ、
厚膜抵抗体を形成する。■Print and harden using resistance paste containing resistor powder, thermosetting resin as a binder, and other solvents.
Form a thick film resistor.
■通常、耐環境性を向上させるため、抵抗体の表面上を
誘電体ペーストを用いて力バーする。■Usually, a dielectric paste is applied to the surface of the resistor to improve its environmental resistance.
の■、■および■の工程により一般的に行われている。It is generally carried out by steps ①, ② and ②.
しかしながら、樹脂基板、金属ベース基板、アルミナ基
板等の基板上に、従来技術にて形成された抵抗体の抵抗
温度係数（ＴＣＲ）の値は、絶対値にて３００ｐｐｍ／
Ｃを越えたり、２５℃から１２５℃まで昇温し、次いで
２５℃まで降温した場合、最初の２５℃の時の抵抗値Ｒ
，と降温後の２５℃の抵抗値Ｒ，が等値とならず、数％
の差（オフセット）が出る。つまり、高温使用する場合
、抵抗値の変動が問題となる。However, the temperature coefficient of resistance (TCR) of a resistor formed using conventional technology on a substrate such as a resin substrate, metal base substrate, or alumina substrate is 300 ppm/
If the temperature exceeds C, or if the temperature is raised from 25℃ to 125℃ and then lowered to 25℃, the resistance value R at the first 25℃
, and the resistance value R at 25℃ after cooling are not equal, and the resistance value R is several %.
A difference (offset) appears. In other words, when used at high temperatures, fluctuations in resistance become a problem.
本発明の目的は、上記の欠点を改良し、ＴＣＲ値が小さ
く、かつオフセットのない安定な厚膜抵抗体を形成する
方法を提供することにある。An object of the present invention is to improve the above-mentioned drawbacks and provide a method for forming a stable thick film resistor having a small TCR value and no offset.
すなわち、本発明は、基板上にバインダー樹脂として熱
硬化性樹脂を含有する抵抗ペーストを使用して印刷を行
い、硬化処理を施して厚膜抵抗体を形成する方法におい
て、使用する熱硬化性樹脂の硬化後のガラス転移温度よ
り高い温度で硬化処理することを特徴とする厚膜抵抗体
の形成方法を提供する。That is, the present invention provides a method for forming a thick film resistor by printing on a substrate using a resistance paste containing a thermosetting resin as a binder resin and performing a curing process. Provided is a method for forming a thick film resistor, characterized in that the curing treatment is performed at a temperature higher than the glass transition temperature after curing.
以下、本発明について詳細に述べる。The present invention will be described in detail below.
通常、樹脂基板、金属ベース基板を使用する場合は、予
め銅箔をエッチングして導体並びに抵抗体の電極を形成
して回路基板を製作しておく。Normally, when using a resin substrate or a metal base substrate, the circuit board is manufactured by etching the copper foil in advance to form conductor and resistor electrodes.
また、アルミナ基板等のセラミック基板の場合は、通常
、Ａｇ−Ｐｄ等の貴金属の導体ペーストを印刷、焼成し
て導体並びに抵抗体の電極を形成しておく。Further, in the case of a ceramic substrate such as an alumina substrate, a conductor paste of a noble metal such as Ag-Pd is usually printed and fired to form conductor and resistor electrodes.
抵抗体の形成は、バインダー樹脂として熱硬化性樹脂を
含有する抵抗ペーストを用いてスクリーン印刷等の方法
で印刷し、ついで硬化させることにより行うが、その際
、該熱硬化性樹脂のガラス転移温度よりも高い温度、好
ましくは１０〜７０℃高く、かつ分解温度より低い温度
で硬化処理することが重要である。この温度条件を選択
することにより、抵抗温度係数（ＴＣＲ）が小さく、高
温度での使用に対し安定な抵抗体を形成することができ
る。The resistor is formed by printing by a method such as screen printing using a resistance paste containing a thermosetting resin as a binder resin, and then curing it. It is important to carry out the curing treatment at a temperature higher than the decomposition temperature, preferably 10 to 70°C higher and lower than the decomposition temperature. By selecting this temperature condition, it is possible to form a resistor that has a small temperature coefficient of resistance (TCR) and is stable for use at high temperatures.
バインダーとして使用する熱硬化性樹脂としてはエポキ
シ樹脂、フェノール樹脂、イミド樹脂等が好適に使用で
きる。As the thermosetting resin used as the binder, epoxy resin, phenol resin, imide resin, etc. can be suitably used.
また、抵抗体材料としてはカーボン、グラファイト等の
粉末が使用される。Furthermore, powders of carbon, graphite, etc. are used as the resistor material.
抵抗ペーストには、これらの他に通常、溶媒、消泡剤等
が含まれており、さらに必要に応じ、ＴＣＲ改良剤とし
てＡＩｔｏ３、Ｓｉｆｔ等の粉末、抵抗値を調節するた
めに銀粉等の金属粉を加えてもよい。In addition to these, the resistance paste usually contains a solvent, an antifoaming agent, etc., and if necessary, powders such as AIto3 and Sift as TCR improvers, and metals such as silver powder to adjust the resistance value. You can also add flour.
抵抗ペーストの印刷は一般にスクリーン印刷で行われる
。Printing of resistive paste is generally done by screen printing.
また、本発明においては、抵抗体を形成後、耐環境特性
を向上させるため、抵抗体の表面を公知の誘電体ペース
トで力バーしてもよい。 −〔実施例〕
以下、実施例により本発明を具体的に説明する。Further, in the present invention, after forming the resistor, the surface of the resistor may be coated with a known dielectric paste in order to improve environmental resistance. - [Example] Hereinafter, the present invention will be specifically explained with reference to Examples.
実施例 ｌ
エポキシ樹脂としてスミエポキシ＠ ＥＬＭ−ｌｏｏ（
住友化学工業■製）７８重量部、硬化剤としてＨＮ５５
００（日立化成工業器製）１２３重量部からなる液状エ
ポキシ樹脂組成物（硬化後のガラス転移温度２００℃）
、カーボンＨＳ−５００（旭カーボン■製）５０重量部
および溶媒（α−テルピネオール８．５重量％、ブチル
カルピトールアセテート１５重量％）５０重量部を乳鉢
で１時間混練し、抵抗ペーストを得た。Example l Sumiepoxy@ELM-loo(
(manufactured by Sumitomo Chemical Co., Ltd.) 78 parts by weight, HN55 as a curing agent
00 (manufactured by Hitachi Chemical Industries, Ltd.) Liquid epoxy resin composition consisting of 123 parts by weight (glass transition temperature after curing: 200°C)
, 50 parts by weight of Carbon HS-500 (manufactured by Asahi Carbon ■) and 50 parts by weight of a solvent (8.5% by weight of α-terpineol, 15% by weight of butyl carpitol acetate) were kneaded in a mortar for 1 hour to obtain a resistance paste. .
このペーストをＡｇ−Ｐｄ導体電極を予め形成したアル
ミナ回路基板上にスクリーン印刷により印刷し、１００
℃でｌＯ分間乾燥後、２６０℃で１時間加熱硬化を行っ
た。This paste was printed by screen printing on an alumina circuit board on which Ag-Pd conductor electrodes had been formed in advance.
After drying at 10°C for 10 minutes, heat curing was performed at 260°C for 1 hour.
得られた抵抗体の−５５〜１２５℃での抵−抗温度係数
の絶対値は２５０ｐｐｍ／ ℃であった。また、形成さ
れた抵抗体を１２５℃に１時間曝した後、２５℃におけ
る初期値とのオフセットは認められなかった。The absolute value of the temperature coefficient of resistance of the obtained resistor at -55 to 125°C was 250 ppm/°C. Moreover, after exposing the formed resistor to 125° C. for 1 hour, no offset from the initial value at 25° C. was observed.
実施例 ２
エポキシ樹脂としてスミエポキシ＠ ＥＳＣＮ−１９５
Ｘ（住友化学工業■製）１００重量部、タノマール＠（
フェノールノボラック樹脂）（荒川化学器製）５６重量
部、硬化促進剤としてトリフ−エニルツオスフィン１重
量部からなる固体エポキシ組成物（硬化後のガラス転移
温度１８７℃）を混合溶媒（酢酸エチル４５重量％、ト
ルエン３０重量％、メチルエチルケトン１５重量％、ｎ
−ブチルアルコールｌＯ重量％）に溶解して作製したバ
インダー溶液と、カーボンＨＳ−５００（旭カーボン■
製）５０重量部および溶媒（α−テルピネオール８５重
量％、ブチルカルピトールアセテ−）１５重量％）５０
重量部を乳鉢で１時間混練し抵抗ペーストを得た。この
ペーストをＡｇ−Ｐｄ導体電極を予め形成したアルミナ
回路基板上にスクリーン印刷により印刷し、１００℃で
ｌＯ分間乾燥後、２６０℃１時間加熱硬化を行っに０
得られた抵抗体の−５５〜１２５℃での抵抗温度係数の
絶対値は２５０ｐｐｍ／ Ｃであった。また、形成され
た抵抗体を１２５℃に１時間曝した後、２５℃における
初期値とのオフセットは認められなかった。Example 2 Sumiepoxy @ ESCN-195 as epoxy resin
100 parts by weight of X (manufactured by Sumitomo Chemical Co., Ltd.), Tanomar@(
A solid epoxy composition (glass transition temperature after curing: 187°C) consisting of 56 parts by weight of phenol novolak resin (manufactured by Arakawa Kagakuki) and 1 part by weight of triphenyltuosphine as a curing accelerator was mixed with a mixed solvent (45 parts of ethyl acetate). wt%, toluene 30 wt%, methyl ethyl ketone 15 wt%, n
A binder solution prepared by dissolving carbon HS-500 (Asahi Carbon ■
50 parts by weight of solvent (85% by weight of α-terpineol, 15% by weight of butyl carpitol acetate)) 50 parts by weight
Parts by weight were kneaded in a mortar for 1 hour to obtain a resistance paste. This paste was printed by screen printing on an alumina circuit board on which Ag-Pd conductor electrodes had been formed in advance, and after drying at 100°C for 10 minutes, it was heat-cured at 260°C for 1 hour. The absolute value of the temperature coefficient of resistance at 125°C was 250 ppm/°C. Moreover, after exposing the formed resistor to 125° C. for 1 hour, no offset from the initial value at 25° C. was observed.
比較例 ｌ
熱硬化を１８０℃で行った以外は実施例１と同様にして
厚膜抵抗体を形成した。Comparative Example 1 A thick film resistor was formed in the same manner as in Example 1, except that thermosetting was performed at 180°C.
得られた抵抗体の−５５〜１２５℃での抵抗温度係数の
絶対値は５００ｐｐｍ／ Ｃ以上であった。また、形成
された抵抗体を１２５℃に１時間曝した後、２５℃にお
ける初期値とのオフセットが５％以上認められた。The absolute value of the temperature coefficient of resistance of the obtained resistor at -55 to 125°C was 500 ppm/C or more. Further, after exposing the formed resistor to 125° C. for 1 hour, an offset of 5% or more from the initial value at 25° C. was observed.
本発明方法によれば、回路基板上に抵抗温度係数（ＴＣ
Ｒ）が小さく、高温度での使用に対し安定な厚膜抵抗体
を形成することができ、その工業的価値は大きい。According to the method of the present invention, temperature coefficient of resistance (TC
It is possible to form a thick film resistor having a small R) and being stable for use at high temperatures, and its industrial value is great.
〜／′~/'
Claims (1)
する抵抗ペーストを使用して印刷を行い、次いで硬化処
理を施して厚膜抵抗体を形成する方法において、使用す
る熱硬化性樹脂の硬化後のガラス転移温度より高い温度
で硬化処理することを特徴とする厚膜抵抗体の形成方法
。In a method of printing on a circuit board using a resistance paste containing a thermosetting resin as a binder and then performing a curing process to form a thick film resistor, after the thermosetting resin used is cured. A method for forming a thick film resistor, characterized by performing a curing treatment at a temperature higher than the glass transition temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1289751A JPH03149803A (en) | 1989-11-06 | 1989-11-06 | Method of forming thick film resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1289751A JPH03149803A (en) | 1989-11-06 | 1989-11-06 | Method of forming thick film resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03149803A true JPH03149803A (en) | 1991-06-26 |
Family
ID=17747292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1289751A Pending JPH03149803A (en) | 1989-11-06 | 1989-11-06 | Method of forming thick film resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03149803A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7018674B2 (en) * | 2001-03-02 | 2006-03-28 | Omron, Corporation | Manufacturing methods and apparatuses of an optical device and a reflection plate provided with a resin thin film having a micro-asperity pattern |
| KR100795571B1 (en) * | 2006-09-27 | 2008-01-21 | 전자부품연구원 | Paste for thick-film resistor, manufacturing method thereof and thick-film resistor |
-
1989
- 1989-11-06 JP JP1289751A patent/JPH03149803A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7018674B2 (en) * | 2001-03-02 | 2006-03-28 | Omron, Corporation | Manufacturing methods and apparatuses of an optical device and a reflection plate provided with a resin thin film having a micro-asperity pattern |
| KR100795571B1 (en) * | 2006-09-27 | 2008-01-21 | 전자부품연구원 | Paste for thick-film resistor, manufacturing method thereof and thick-film resistor |
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