JPH0221669B2 - - Google Patents

Info

Publication number
JPH0221669B2
JPH0221669B2 JP19038083A JP19038083A JPH0221669B2 JP H0221669 B2 JPH0221669 B2 JP H0221669B2 JP 19038083 A JP19038083 A JP 19038083A JP 19038083 A JP19038083 A JP 19038083A JP H0221669 B2 JPH0221669 B2 JP H0221669B2
Authority
JP
Japan
Prior art keywords
integrated circuit
ceramic substrate
hybrid integrated
film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP19038083A
Other languages
Japanese (ja)
Other versions
JPS60160192A (en
Inventor
Hideo Sekimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Powdered Metals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Powdered Metals Co Ltd filed Critical Hitachi Powdered Metals Co Ltd
Priority to JP19038083A priority Critical patent/JPS60160192A/en
Publication of JPS60160192A publication Critical patent/JPS60160192A/en
Publication of JPH0221669B2 publication Critical patent/JPH0221669B2/ja
Granted legal-status Critical Current

Links

Description

【発明の詳細な説明】 本発明は、高純度の微粉水素化銅および少量の
無機質結合剤その他をペースト剤と混練した導電
性ペーストを用いて、セラミツク基板上に接着強
度が大きい高純度銅膜の導体パターンを生成する
混成集積回路の製造方法に係るものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention uses a conductive paste prepared by kneading high-purity fine copper hydride powder and a small amount of an inorganic binder with a paste agent to form a high-purity copper film with high adhesive strength on a ceramic substrate. The present invention relates to a method for manufacturing a hybrid integrated circuit that generates a conductor pattern.

従来、混成集積回路基板は、金、銀、白金、パ
ラジウム等の貴金属およびその合金の微粉と、接
着剤としてガラス質のフリツトをペースト剤に加
えて混練した導電性ペーストを用いて、セラミツ
ク基板上に導体パターンを印加し、それを高温で
焼成することによつて製造している。
Conventionally, hybrid integrated circuit boards have been fabricated on ceramic substrates using a conductive paste made by kneading fine powder of precious metals such as gold, silver, platinum, palladium, and their alloys, and glassy frit as an adhesive. It is manufactured by applying a conductor pattern to the surface and firing it at high temperature.

しかるに、従来の混成集積回路基板の製造に用
いられている導電性ペーストは、それに混合され
ているフリツトが電気絶縁物があるので、セラミ
ツク基板に対する導体膜の接着性は良好であつて
も、導体膜の電気伝導度がそこなわれる欠点があ
る。そして、この電気伝導度の低下は、混成集積
回路で扱われる電波の信号の周波が高くなると、
この混成集積回路のインピーダンスが愈々高くな
つて回路の機能を著しく低下させる原因となるの
で、従来の上記方法によつて製造された混成集積
回路基板では、特にマイクロウエーブ回路用とし
ては不適当であつた。
However, in the conductive paste used in the production of conventional hybrid integrated circuit boards, the frit mixed therein is an electrical insulator, so even though the adhesion of the conductive film to the ceramic substrate is good, the conductive paste The drawback is that the electrical conductivity of the membrane is impaired. This decrease in electrical conductivity occurs as the frequency of the radio signal handled by the hybrid integrated circuit increases.
The impedance of this hybrid integrated circuit becomes increasingly high, which causes a significant deterioration in the circuit's function. Therefore, hybrid integrated circuit boards manufactured by the conventional method described above are particularly unsuitable for use in microwave circuits. Ta.

超高周波及びマイクロウエーブ用の混成集積回
路基板としては、導体膜の電気伝導度が高く、し
かもその基板との接着力が強力であつて熱の基板
への回路の機能作用によつて発生する熱の消散に
すぐれていることが必要である。
As a hybrid integrated circuit board for ultra-high frequency and microwave applications, the conductor film has high electrical conductivity and has a strong adhesion to the board, so that the heat generated by the functional action of the circuit on the board can be avoided. It is necessary that the material has excellent dissipation.

本発明は、従来の実状に鑑み、また上記技術的
要求を満足させる混成集積回路基板を容易に得ら
れるようにすることを目的とし、高純度の微粉水
素化銅および少量の無機質結合剤その他をベース
ト剤と混練した導電性ペーストを用いて、セラミ
ツク基板上に混成集積回路の導体パターンを印刷
し、その印刷面を空気中で適度に乾燥した後、セ
ラミツク基板の不活性ガスの雰囲気中において
800℃ないし900℃の範囲内の温度で焼成して、基
板面に対する接着力が大きい高純度銅膜の導体パ
ターンを形成することにより、導体膜が純銅のも
つ値と同等の高い電気伝導度を有し、しかも導体
膜から基板への熱の消散にすぐれ、特にマイクロ
ウエーブ用として高能率で特性の良好な混成集積
回路基板を容易に得ることができる製造方法を提
供しようとするものである。
The present invention has been made in view of the conventional situation and with the object of making it possible to easily obtain a hybrid integrated circuit board that satisfies the above technical requirements, and by using high purity fine powder copper hydride, a small amount of an inorganic binder, etc. A conductive pattern of a hybrid integrated circuit is printed on a ceramic substrate using a conductive paste kneaded with a base agent, and after drying the printed surface appropriately in the air, the ceramic substrate is placed in an inert gas atmosphere.
By firing at a temperature in the range of 800℃ to 900℃ to form a conductor pattern of high-purity copper film that has strong adhesion to the substrate surface, the conductor film has high electrical conductivity equivalent to that of pure copper. It is an object of the present invention to provide a manufacturing method which can easily obtain a hybrid integrated circuit board having a high efficiency and excellent characteristics, particularly for use in microwaves, and which has excellent heat dissipation from the conductive film to the substrate.

以下、本発明に係る混成集積回路基板の製造方
法の一実施例について具体的に説明する。
Hereinafter, one embodiment of the method for manufacturing a hybrid integrated circuit board according to the present invention will be described in detail.

混成集積回路基板を構成するセラミツク基板
は、純度96%のアルミナ基板の厚さ約0.8mmのも
のである。導電性ペーストは、高純度の水素化銅
(CuHx)、少量の無機質結合剤1.5%、金属酸化物
6〜4%を約10%のペースト剤と混練してなるも
のである。なお、セラミツク基板としては、記の
もののほかベリリヤ基板等が用いられる。
The ceramic substrate that makes up the hybrid integrated circuit board is a 96% pure alumina substrate with a thickness of approximately 0.8 mm. The conductive paste is made by kneading high purity copper hydride (CuHx), a small amount of 1.5% inorganic binder, and 6-4% metal oxide with about 10% paste agent. Incidentally, as the ceramic substrate, in addition to those mentioned above, a beryllia substrate or the like can be used.

上記セラミツク基板と導電性ペーストによる混
成集積回路基板の製造にあたつては、まず、セラ
ミツク基板面を清浄にし、このセラミツク基板上
に所定のスクリーンで導電性ペーストを用いて混
成集積回路の導体パターンを印刷し、温度が100
℃の空気中で15分間乾燥する。次いで、このセラ
ミツク基板を不活性ガス(窒素ガス)の雰囲気中
で徐々に昇温して800℃ないし900℃の範囲の一定
温度(例えば850℃)で10分間焼成した後、冷し
て常温まで戻せば、セラミツク基板上には、緻密
で均質な高純度銅膜の導体パターンが生成され、
その導体膜はセラミツク基板に強固に接着してい
る。なお、不活性ガスの雰囲気中で焼成を行うの
は、導体膜の酸化防止のためである。したがつ
て、不活性ガス雰囲気中の酸素含有量は10ppm以
内にとどめておく必要がある。
In manufacturing a hybrid integrated circuit board using the above-mentioned ceramic substrate and conductive paste, first, the surface of the ceramic substrate is cleaned, and a conductive pattern of the hybrid integrated circuit is formed on the ceramic substrate using a conductive paste on a predetermined screen. and the temperature is 100
Dry for 15 min in air at °C. Next, this ceramic substrate is heated gradually in an inert gas (nitrogen gas) atmosphere and fired at a constant temperature in the range of 800°C to 900°C (for example, 850°C) for 10 minutes, and then cooled to room temperature. When returned, a dense and homogeneous conductor pattern of high-purity copper film is generated on the ceramic substrate.
The conductor film is firmly adhered to the ceramic substrate. Note that the reason for performing baking in an inert gas atmosphere is to prevent oxidation of the conductor film. Therefore, the oxygen content in the inert gas atmosphere must be kept within 10 ppm.

叙上の如き混成集積回路基板の製造工程によつ
て、セラミツク基板に高純度銅膜の導体パターン
が生成され、かつその導体膜がセラミツク基板に
強固に接着するのは次のような現象による。
The reason why a conductor pattern of a high purity copper film is produced on a ceramic substrate in the manufacturing process of a hybrid integrated circuit board as described above, and that the conductor film is firmly adhered to the ceramic substrate is due to the following phenomenon.

導電性ペーストにより導体パターンを印加した
セラミツク基板が不活性ガスの雰囲気中で300℃
前後の温度になると、導電性ペーストの有機質分
が放出ないしは燃焼した消失する。さらに温度を
上昇して400℃ないし500℃になると、水素化銅中
の結合水素分が結合を離れて一時活性化し、それ
が残留純銅膜内を漂流して該膜内に水素雰囲気が
発生させ純銅粒子を一層活性化するので、純銅粒
子間の化学結合を容易にし、高純度銅膜とセラミ
ツク基板面との接着強度を高める。さらに温度が
600℃前後になると、結合水素が完全に離脱して
放出し、温度が800℃ないし900℃まで上昇する
と、少量混入した無機質結合剤および金属酸化物
が高純度銅膜のセラミツク基板に対する接着強度
を一層高めるように複合的助長作用をする。そし
て、上記高温状態を一定時間経た後、セラミツク
基板を徐冷し、常温に戻して焼成を終了する。焼
成終了後の導体膜のセラミツク基板に対する接着
強度は1平方ミリメートル当り数キログラムにも
達し、その電気伝導度は純銅と同等であつてきわ
めて高い。
A ceramic substrate with a conductive pattern applied with conductive paste is heated at 300℃ in an inert gas atmosphere.
When the temperature is around this temperature, the organic content of the conductive paste is released or burned and disappears. When the temperature is further increased to 400°C to 500°C, the bonded hydrogen in the copper hydride leaves the bond and is temporarily activated, which drifts within the remaining pure copper film and generates a hydrogen atmosphere within the film. Since the pure copper particles are further activated, chemical bonding between the pure copper particles is facilitated, and the adhesive strength between the high purity copper film and the ceramic substrate surface is increased. Even more temperature
At around 600°C, bound hydrogen is completely dissociated and released, and when the temperature rises to 800°C to 900°C, small amounts of inorganic binders and metal oxides increase the adhesive strength of high-purity copper films to ceramic substrates. It has a multi-promoting effect to further enhance the effect. After a certain period of time has passed in the above-mentioned high temperature state, the ceramic substrate is slowly cooled and returned to room temperature to complete the firing. After firing, the adhesive strength of the conductor film to the ceramic substrate reaches several kilograms per square millimeter, and its electrical conductivity is extremely high, equivalent to that of pure copper.

第1図および第2図には、本発明に係る方法に
よつて製造された混成集積回路基板が例示されて
いる。図中、1はセラミツク(アルミナ)基板、
2は高純度銅膜の導体パターン、3は印刷時の合
わせマーク、4は端子である。
1 and 2 illustrate a hybrid integrated circuit board manufactured by the method according to the invention. In the figure, 1 is a ceramic (alumina) substrate,
2 is a conductor pattern made of high-purity copper film, 3 is an alignment mark during printing, and 4 is a terminal.

本発明に係る方法によつて製造された混成集積
回路基板は、その基板がセラミツクであつて、し
かも導体膜が高純度銅膜が構成され、さらにこの
導体膜はセラミツク基板に対して強固に接着され
ているので、導体膜の電気伝導度が高く、特に超
高周波、マイクロウエーブなどの回路用として高
能率のすぐれた動作をする回路を構成することが
できる。また、基板のセラミツクは熱放散の良導
体であるうえ、導体膜がそれに強固に接着してい
るので、導体膜からセラミツク基板への熱消散が
良好であつて、高温の使用条件においても耐える
ことができ、しかもこのような使用条件下でも高
い信頼性を有する。
In the hybrid integrated circuit board manufactured by the method according to the present invention, the substrate is made of ceramic, and the conductive film is composed of a high-purity copper film, and the conductive film is firmly adhered to the ceramic substrate. Therefore, the electrical conductivity of the conductive film is high, and it is possible to construct a circuit that operates with high efficiency, especially for ultra-high frequency, microwave, etc. circuits. In addition, the ceramic substrate is a good conductor for heat dissipation, and since the conductor film is firmly adhered to it, heat dissipation from the conductor film to the ceramic substrate is good, and it can withstand high-temperature usage conditions. Moreover, it has high reliability even under such usage conditions.

混成集積回路は、一般産業、電子計算機産業、
家電産業等で多方向に使用されているが、その回
路素子は情報過多のため、きわめて過酷に使用さ
れる場合が多い。しかし、本発明に係る方法によ
つて製造された混成集積回路基板は、前記の如き
すぐれた特性を備えているので、そのような使用
条件下にも十分耐えうるものである。
Hybrid integrated circuits are used in general industry, computer industry,
Although they are used in many ways in the home appliance industry, their circuit elements are often used extremely harshly due to the overload of information. However, since the hybrid integrated circuit board manufactured by the method according to the present invention has the above-mentioned excellent characteristics, it can sufficiently withstand such usage conditions.

なお、本発明に係る方法によれば、セラミツク
基板に高純度銅膜の導体膜をきわめて容易に生成
することができ、その電気伝導度はきわめて高い
ので、従来のもののように、金、銀、白金、パラ
ジウム等の如き貴金属を用いる必要がなく、高性
能の混成集積回路基板を経済的に提供することが
できる。導体膜が高純度銅膜であることはハンダ
のぬれ性強度が良好である。これもその一つの特
長である。
Furthermore, according to the method of the present invention, a conductive film of high-purity copper film can be extremely easily produced on a ceramic substrate, and its electrical conductivity is extremely high. There is no need to use noble metals such as platinum, palladium, etc., and a high performance hybrid integrated circuit board can be provided economically. The fact that the conductor film is a high-purity copper film has good solder wettability strength. This is also one of its features.

これを要するに、本発明は、高純度の微粉水素
化銅および少量の無機質結合剤その他をペースト
剤と混練した導電性ペーストを用いて、セラミツ
ク基板上に混成集積回路の導体パターンを印加
し、その印刷面を空気中で適度に乾燥した後、セ
ラミツク基板を不活用ガスの雰囲気中において
800℃ないし900℃の範囲内の温度で焼成して、基
板面に対する接着強度が大きい高純度銅膜の導体
パターンを生成する混成集積回路基板の精造方法
であるから、導体膜が純銅のもつ同等の高い電気
伝導度を有し、導体膜から基板への熱消散にすぐ
れ、特にマイクロウエーブ用として高能率で特性
の良好な混成集積回路基板を容易に得ることがで
きる等、きわめて有用な新規的効果を奏するもの
である。
In summary, the present invention applies a conductive pattern of a hybrid integrated circuit onto a ceramic substrate using a conductive paste made by mixing high-purity finely divided copper hydride and a small amount of an inorganic binder with a paste agent. After drying the printed surface appropriately in the air, place the ceramic substrate in an atmosphere of unused gas.
This is a method for manufacturing hybrid integrated circuit boards in which the conductor pattern of a high-purity copper film is baked at a temperature in the range of 800°C to 900°C and has high adhesion strength to the substrate surface. This is an extremely useful novel product that has comparable high electrical conductivity, excellent heat dissipation from the conductor film to the substrate, and allows easy production of hybrid integrated circuit boards with high efficiency and good characteristics, especially for microwave applications. This is effective.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明に係る方法によつて製造された
混成集積回路基板の一例を示す平面図、第2図は
同上正面図である。 図中、1はセラミツク基板、2は高純度銅膜の
導体パターン、3は印刷時の合わせマーク、4は
端子である。
FIG. 1 is a plan view showing an example of a hybrid integrated circuit board manufactured by the method according to the present invention, and FIG. 2 is a front view of the same. In the figure, 1 is a ceramic substrate, 2 is a conductor pattern of high-purity copper film, 3 is an alignment mark during printing, and 4 is a terminal.

Claims (1)

【特許請求の範囲】[Claims] 1 高純度の微粉水素化銅および少量の無機質結
合剤その他をペースト剤と混練した導電性ペース
トを用いて、セラミツク基板上に混成集積回路の
導体パターンを印刷し、その印刷面を空気中で適
度に乾燥した後、セラミツク基板を不活性ガスの
雰囲気中において800℃ないし900℃の範囲内の温
度で焼成して、基板面に対する接着強度が大きい
高純度銅膜の導体パターンを生成することを特徴
とする混成集積回路基板の製造方法。
1. Print a conductor pattern of a hybrid integrated circuit on a ceramic substrate using a conductive paste made by mixing high-purity finely divided copper hydride and a small amount of an inorganic binder with a paste agent, and then expose the printed surface to a moderate level in the air. After drying, the ceramic substrate is fired at a temperature in the range of 800℃ to 900℃ in an inert gas atmosphere to produce a conductor pattern of high purity copper film with high adhesive strength to the substrate surface. A method for manufacturing a hybrid integrated circuit board.
JP19038083A 1983-10-12 1983-10-12 Method of producing hybrid integrated circuit board Granted JPS60160192A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19038083A JPS60160192A (en) 1983-10-12 1983-10-12 Method of producing hybrid integrated circuit board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19038083A JPS60160192A (en) 1983-10-12 1983-10-12 Method of producing hybrid integrated circuit board

Publications (2)

Publication Number Publication Date
JPS60160192A JPS60160192A (en) 1985-08-21
JPH0221669B2 true JPH0221669B2 (en) 1990-05-15

Family

ID=16257205

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19038083A Granted JPS60160192A (en) 1983-10-12 1983-10-12 Method of producing hybrid integrated circuit board

Country Status (1)

Country Link
JP (1) JPS60160192A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0782963B2 (en) * 1986-05-30 1995-09-06 松下電器産業株式会社 Manufacturing method of laminated ceramics
KR101093465B1 (en) * 2003-06-10 2011-12-13 아사히 가라스 가부시키가이샤 Metal hydride fine particle, method for producing same, liquid dispersion containing metal hydride fine particle, and metallic material

Also Published As

Publication number Publication date
JPS60160192A (en) 1985-08-21

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