JPH03145598A - Turbo pump - Google Patents
Turbo pumpInfo
- Publication number
- JPH03145598A JPH03145598A JP1283520A JP28352089A JPH03145598A JP H03145598 A JPH03145598 A JP H03145598A JP 1283520 A JP1283520 A JP 1283520A JP 28352089 A JP28352089 A JP 28352089A JP H03145598 A JPH03145598 A JP H03145598A
- Authority
- JP
- Japan
- Prior art keywords
- pump
- turbo pump
- turbo
- gas
- rotor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001816 cooling Methods 0.000 abstract description 19
- 125000006850 spacer group Chemical group 0.000 abstract description 11
- 238000013021 overheating Methods 0.000 abstract 2
- 239000007789 gas Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 9
- 239000000047 product Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000007795 chemical reaction product Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000010365 information processing Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04D—NON-POSITIVE-DISPLACEMENT PUMPS
- F04D19/00—Axial-flow pumps
- F04D19/02—Multi-stage pumps
- F04D19/04—Multi-stage pumps specially adapted to the production of a high vacuum, e.g. molecular pumps
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04D—NON-POSITIVE-DISPLACEMENT PUMPS
- F04D29/00—Details, component parts, or accessories
- F04D29/58—Cooling; Heating; Diminishing heat transfer
- F04D29/582—Cooling; Heating; Diminishing heat transfer specially adapted for elastic fluid pumps
- F04D29/5853—Cooling; Heating; Diminishing heat transfer specially adapted for elastic fluid pumps heat insulation or conduction
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F05—INDEXING SCHEMES RELATING TO ENGINES OR PUMPS IN VARIOUS SUBCLASSES OF CLASSES F01-F04
- F05D—INDEXING SCHEME FOR ASPECTS RELATING TO NON-POSITIVE-DISPLACEMENT MACHINES OR ENGINES, GAS-TURBINES OR JET-PROPULSION PLANTS
- F05D2260/00—Function
- F05D2260/60—Fluid transfer
- F05D2260/607—Preventing clogging or obstruction of flow paths by dirt, dust, or foreign particles
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Non-Positive Displacement Air Blowers (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
ターボポンプに関し、
無機化合物あるいは有機化合物からなるガスも排気可能
なターボポンプを実用化することを目的とし、
ガス分子の運動速度と同程度の周速で回転するロータと
、該ロータに対向して設けられているステータとからな
り、真空排気を行うターボポンプにおいて、ポンプがオ
ーバーヒートしない温度範囲内で該ポンプの排気流路の
温度を高めて運転を行うことを特徴としてターボポンプ
を構成する。[Detailed Description of the Invention] [Summary] Regarding turbo pumps, the objective is to put into practical use a turbo pump that can also exhaust gases made of inorganic or organic compounds, and which rotates at a circumferential speed similar to the moving speed of gas molecules. A turbo pump consisting of a rotor and a stator provided opposite to the rotor, which performs vacuum evacuation, is operated by raising the temperature of the exhaust flow path of the pump within a temperature range that does not overheat the pump. A turbo pump is configured with these features.
本発明はターボポンプの改良に関する。 The present invention relates to improvements in turbo pumps.
大量の情報を高速に処理する必要から情報処理技術の進
歩は著しく、情報処理装置は大容量化が進んでおり、こ
の主体を構成する半導体装置は単位素子の小型化により
大容量化が進んでＬＳＩやＶＬＳｌが実用化されている
。Due to the need to process large amounts of information at high speed, information processing technology has advanced significantly, and the capacity of information processing equipment is increasing.The capacity of the semiconductor devices that make up the main components of this equipment is also increasing due to the miniaturization of unit elements. LSI and VLSI have been put into practical use.
こ覧で、これらの半導体装置は薄膜形成技術。As you can see, these semiconductor devices use thin film formation technology.
写真蝕刻技術（フォトリソグラフィ）、イオン注入技術
などを駆使して製造されているが、これらの技術には真
空機器が多用されている。They are manufactured using photolithography, ion implantation, and other techniques, and these techniques often use vacuum equipment.
例えば、真空蒸着やスバタリングには排気装置が必須で
あり、またイオン注入も高真空中での電界印加が必須条
件で高性能なポンプが必要である。For example, vacuum evaporation and sputtering require an exhaust device, and ion implantation also requires the application of an electric field in a high vacuum, which requires a high-performance pump.
このように真空装置は半導体装置の製造には必要である
が、これに留まらず回路部品や光学部品の製造にも勿論
必要である。As described above, vacuum equipment is necessary for manufacturing semiconductor devices, but it is also necessary not only for manufacturing semiconductor devices but also for manufacturing circuit components and optical components.
こ＼で、真空ポンプの従来の使用法は真空装置内を排気
により減圧し、必要とする真空度にまで排気するのが目
的であったが、現在では用途が拡大されて化学反応物の
排気にも使用されている。The conventional method of using a vacuum pump was to reduce the pressure inside a vacuum device by evacuation to the required degree of vacuum, but its use has now expanded to include evacuation of chemical reactants. It is also used in
例えば、写真蝕刻技術にはドライエツチングがあり、こ
れは装置構成によりプラズマエツチング。For example, photo-etching technology includes dry etching, which can be replaced by plasma etching depending on the equipment configuration.
反応性イオンエツチング（略称ＲＩＥ）などに分かれる
が、何れも反応性ガスを装置内に供給しながら１０−”
〜１０− ’ ｔｏｒｒに減圧した状態で高周波電界を
加えてイオン化し、このイオンを被処理基板に衝突させ
ることによりエツチングする方法であり、この場合、真
空ポンプには反応ガス以外にガス化した反応生成物も吸
引されて排気される。It is divided into reactive ion etching (abbreviated as RIE), etc., and all of them are 10-" while supplying reactive gas into the equipment.
This is a method of etching by applying a high-frequency electric field to ionize the substrate under a reduced pressure of ~10-' torr and colliding the ions with the substrate to be processed. In this case, the vacuum pump contains gasified reaction gas in addition to the reaction gas. The products are also sucked out and vented.
こ＼で、反応ガスとしてはＣＦ４．ＣＦＩＣＩ、ＣＣｌ
４などがある。Here, CF4. CFICI, CCl
There are 4 etc.
また、薄膜形成技術には減圧化学気相反応法（略称減圧
ＣＶＤ法）があり、熱分解を行う反応装置内を１〜ｌＱ
ｔｏｒｒに減圧することによりシラン（ＳｉＨ４）
、ホスフィン（ＰＨｓ）などを初めとし、蒸気圧の高い
各種の有機金属化合物を装置内に導入し、加熱した被処
理基板上で分解して金属あるいは金属化合物からなる薄
膜が形成されていが、この場合にも真空ポンプにはこれ
らのガスや分解生成物が吸引されて排気されている。In addition, thin film formation technology includes a low pressure chemical vapor phase reaction method (abbreviation: low pressure CVD method), in which the interior of the reaction equipment for thermal decomposition is
Silane (SiH4) by reducing pressure to torr
Various organometallic compounds with high vapor pressure, such as phosphine (PHs), are introduced into the equipment and decomposed on the heated substrate to form a thin film of metal or metal compounds. In some cases, these gases and decomposition products are sucked into the vacuum pump and evacuated.
本発明はか覧る用途に使用されるターボポンプに関する
ものである。The present invention relates to a turbo pump used for visual purposes.
ターボポンプは気体分子の運動速度と同程度の周速度に
なる回転速度（敵方ｒｐｍ）で回転する口〜り（翼）と
これと対をなすステータ（固定翼）からなっており、ロ
ータに入射した分子はこの分子速度に更にロータの運動
方向の速度成分が合成され、ロータの回転方向に飛び出
すことを利用して高真空排気を行うポンプであり、直列
にロータリーポンプ（油回転真空ポンプ）やメカニカル
ブースタポンプなどの補助ポンプを付加して使用されて
いる。A turbo pump consists of a rotor (blade) that rotates at a circumferential speed (rpm) that is approximately the same as the moving speed of gas molecules, and a stator (fixed blade) paired with the rotor. This is a pump that performs high vacuum evacuation by utilizing the velocity component of the incident molecules in the direction of rotation of the rotor, which is combined with the molecular velocity and ejects in the direction of rotation of the rotor.In series, a rotary pump (oil rotary vacuum pump) It is used with the addition of an auxiliary pump such as a mechanical booster pump or a mechanical booster pump.
か＼るターボポンプは排気能力が大きいことから、各種
の用途に使用されているが、先に記したようにドライエ
ツチング装置の排気に使用する場合には反応生成物を含
むガスがポンプ内を通過するため、この一部は排気流路
に付着し堆積すると云う問題がある。Such turbo pumps have a large exhaust capacity and are used for various purposes, but as mentioned earlier, when used for exhausting dry etching equipment, gas containing reaction products flows inside the pump. As the gas passes through the air, there is a problem in that some of it adheres to and accumulates in the exhaust flow path.
第５図は従来のターボポンプの構成を示すもので、ター
ボポンプ１のガス吸入口２は真空バルブを介して真空処
理装置に接しており、一方、ガス排出口３は油回転ポン
プやメカニカルブースタポンプなどの補助ポンプに接続
している。Figure 5 shows the configuration of a conventional turbo pump.The gas inlet 2 of the turbo pump 1 is in contact with a vacuum processing device via a vacuum valve, while the gas outlet 3 is connected to an oil rotary pump or mechanical booster. Connected to an auxiliary pump such as a pump.
また、ターボポンプ１の下には冷却ジャケット４が設け
られていて循環水により冷却する構造がとられており、
排気に伴って発生する圧縮熱やポンプ内部のモータや軸
受けなどから発生する熱を冷却し、ポンプを保護してい
る。In addition, a cooling jacket 4 is provided under the turbo pump 1, and a structure is adopted in which cooling is performed by circulating water.
It protects the pump by cooling the compression heat generated by exhaust gas and the heat generated from the motor and bearings inside the pump.
然しなから、先に記したようにターボポンプをドライエ
ツチング装置の排気装置として使用すると、冷却ジャケ
ット４による水冷効果によって、モータ、軸受けなどの
ポンプ内部は正常に保たれるもの覧、ポンプ内部の排気
流路であるステータやポンプベース部分にはエツチング
ガスやその生成物が付着し、運転不能の状態になり易い
。However, as mentioned above, when a turbo pump is used as an exhaust device for a dry etching device, the inside of the pump, such as the motor and bearings, can be maintained in normal condition due to the water cooling effect of the cooling jacket 4. Etching gas and its products adhere to the stator and pump base parts, which are the exhaust flow paths, and are likely to become inoperable.
すなわち、ロータとステータとの間隔がエツチングガス
成分や生成物の付着によって狭くなり、ロータが生成物
に接触して正常な回転が維持できなくなる。That is, the distance between the rotor and the stator becomes narrow due to the attachment of etching gas components and products, and the rotor comes into contact with the products, making it impossible to maintain normal rotation.
そして、再起動してもロータが正常回転に達する前に生
成物と接触して回転不可能な状態となる。Even if the rotor is restarted, it comes into contact with the product and becomes unable to rotate before it reaches normal rotation.
また、磁気軸受は弐のターボポンプの場合、ロータが生
成物に接触するとロータのバランスが崩れ、正常な回転
が維持できなくなり、保護ベアリング上に落下してベア
リングを損傷する恐れがあった。In addition, in the case of the second turbo pump, when the magnetic bearing came into contact with the product, the rotor would become unbalanced, unable to maintain normal rotation, and could fall onto the protective bearing, damaging the bearing.
このように、ターボポンプを従来の１１ｆｃでドライエ
ツチング装置の排気装置として連続使用する場合には、
−ケ月程度で運転不能の状態となるために対策が必要で
あった。In this way, when a turbo pump is continuously used as an exhaust device for a dry etching device at a conventional 11fc,
- Countermeasures were needed because the system would become inoperable within a few months.
以上記したように、ターボポンプをドライエツチング装
置や減圧ＣＶＤ装置など化学反応を伴う装置の排気ポン
プとして使用する場合には、ポンプ内部の排気流路にガ
ス収骨や反応生成物の付着が生じ、運転不能の状態にな
るなど、使用寿命が短いことが問題である。As mentioned above, when a turbo pump is used as an exhaust pump for a device that involves a chemical reaction, such as a dry etching device or a low-pressure CVD device, gas agglomeration and reaction products may adhere to the exhaust flow path inside the pump. The problem is that they have a short service life, such as becoming inoperable.
Ｃ課題を解決するための手段〕
上記の課題はガス分子の運動速度と同程度の周速で回転
するロータと、このロータに対向して設けられているス
テータとからなり、真空排気を行うターボポンプにおい
て、ポンプがオーバーヒートしない温度範囲内で、この
ポンプの排気流路の温度を高めて運転を行うことを特徴
としてターボポンプを構成することにより解決すること
ができる。Means for Solving Problem C] The above problem consists of a rotor that rotates at a circumferential speed similar to the motion speed of gas molecules, and a stator that is provided opposite to this rotor, and a turbo that performs vacuum exhaust. This problem can be solved by configuring a turbo pump so that the pump is operated by increasing the temperature of the exhaust passage of the pump within a temperature range in which the pump does not overheat.
（作用）
第１図は本発明に係るターボポンプの運転領域を示す図
であって、横軸はターボポンプの温度を、また縦軸は真
空処理装置内の圧力を示している。(Function) FIG. 1 is a diagram showing the operating range of the turbo pump according to the present invention, in which the horizontal axis represents the temperature of the turbo pump, and the vertical axis represents the pressure within the vacuum processing apparatus.
こＸで、特性曲線Ｂは反応ガスや反応生成物の付着が生
ずる条件の下限を示すものであり、また直線Ａはポンプ
にインターロックが掛かって運転を停止する条件を示し
ている。In this figure, characteristic curve B shows the lower limit of the conditions under which reaction gases and reaction products adhere, and straight line A shows the conditions under which the pump is interlocked and its operation is stopped.
すなわち、ポンプは１００°Ｃ以上にまで温度上昇する
とロータの強度低下やコイルモールド部の変形などの問
題があるため、約１００℃でインターロックが掛か＼り
運転が停止する安全対策が施されており、直線Ａはこれ
を示している。In other words, if the temperature of the pump rises above 100°C, there will be problems such as a decrease in the strength of the rotor and deformation of the coil mold, so safety measures have been taken to prevent the pump from interlocking and stopping operation at approximately 100°C. , and straight line A shows this.
一方、ポンプの温度が曲線Ｂよりも低温側になると反応
生成物が付着し易くなる。On the other hand, when the temperature of the pump is lower than curve B, reaction products tend to adhere.
また破線で囲まれた部分は従来の運転領域５を示してい
る。Further, the portion surrounded by the broken line indicates the conventional operating region 5.
本発明はターボポンプを特性曲線Ｂと直線Ａで囲まれた
保温領域６で運転させるものである。In the present invention, the turbo pump is operated in a heat retention region 6 surrounded by a characteristic curve B and a straight line A.
さて、ターボポンプをこのような温度領域６で動作させ
るためには次のような方法がある。Now, in order to operate the turbo pump in such a temperature range 6, there are the following methods.
■ ターボポンプと冷却ジャケットの間にスペーサを設
け、冷却効率を下げる。■ Install a spacer between the turbo pump and cooling jacket to reduce cooling efficiency.
■ 自動温度調節器の付いた冷却器を外付けする。■ Install an external cooler with an automatic temperature controller.
■ 空冷ファンを用いて自動温度調節する。■ Automatically adjusts the temperature using an air cooling fan.
このような方法を用いてターボポンプを保温領域で運転
すれば排気流路への反応ガスや反応生成物の付着を防ぐ
ことができ、ターボポンプの長期運転が可能となる。If the turbo pump is operated in the heat retention region using such a method, it is possible to prevent reaction gas and reaction products from adhering to the exhaust flow path, and the turbo pump can be operated for a long period of time.
実施例１： （スペーサを設けた例）
従来のターボポンプは第５図に示すようにターボポンプ
１の下に冷却ジャケット４があり、水冷しているため、
第１図の従来の運転領域５で示すように１５〜２０°Ｃ
程度の低温で運転されているが、この実施例においては
ターボポンプ１と冷却ジャケット４との間にスペーサを
設け、熱伝導を低下させるものである。Example 1: (Example with spacer provided) As shown in Fig. 5, the conventional turbo pump has a cooling jacket 4 under the turbo pump 1 and is water-cooled.
15-20°C as shown in conventional operating area 5 in Figure 1.
In this embodiment, a spacer is provided between the turbo pump 1 and the cooling jacket 4 to reduce heat conduction.
こ覧で、ポンプ内部のモータ、軸受けなどの部分はなる
べく冷却し、ガスの排気流路およびポンプのガス排気口
は冷却しないことが望ましく、そのため第２図に示すよ
うにガス排出口３の方向に開口した馬蹄形のスペーサ７
を使用した。As you can see, it is desirable to cool the motor, bearings, and other parts inside the pump as much as possible, but not to cool the gas exhaust flow path and the gas exhaust port of the pump. Horseshoe-shaped spacer 7 opened in
It was used.
こ＼で、スペーサ７の材料としては熱伝導率の少ない材
料がよく、この実施例においては熱伝導率（Ｊ／Ｃ１１
−３−ｋ ）が０．２４６のステンレス（Ｃｒ１３゜７
％、ＮｉＯ，４％）を使用した。Here, the material for the spacer 7 is preferably a material with low thermal conductivity, and in this embodiment, the thermal conductivity (J/C11
-3-k) is 0.246 stainless steel (Cr13°7
%, NiO, 4%) was used.
なお、熱伝導率が０．１５１の鋼（Ｃｒ１８％、Ｎｉ
８％）、 ０．１２５のニクロムなどもこの目的に適し
ている。Note that steel with a thermal conductivity of 0.151 (Cr18%, Ni
8%), 0.125 nichrome, etc. are also suitable for this purpose.
そして、スペーサ７の材質と厚さを変えることによりタ
ーボポンプの温度を保温領域内に制御することができる
。By changing the material and thickness of the spacer 7, the temperature of the turbo pump can be controlled within the heat retention range.
実施例２： （冷却器の外付けした例）第３図は冷却器
８を外付けし、ターボポンプ１に熱電対のような温度セ
ンサ９を設け、冷却ジャケット４の温度調節を行うもの
である。Embodiment 2: (Example of externally attached cooler) Figure 3 shows an example in which a cooler 8 is attached externally, a temperature sensor 9 such as a thermocouple is provided on the turbo pump 1, and the temperature of the cooling jacket 4 is adjusted. be.
この場合、冷却ジャケット４とターボポンプ１との間に
スペーサを設けても差支えない。In this case, a spacer may be provided between the cooling jacket 4 and the turbo pump 1.
実施例３：゛（空冷ファンを用いた例）第４図は温度セ
ンサ９により自動温度調節する空冷ファン１０を備えた
例であって、ターボポンプ１の温度により風量の調節を
行うものである。Embodiment 3: (Example using an air cooling fan) FIG. 4 shows an example equipped with an air cooling fan 10 that automatically adjusts the temperature using a temperature sensor 9, and the air volume is adjusted according to the temperature of the turbo pump 1. .
このような方法によりターボポンプの温度を第１図に示
す保温領域に保つことにより、化学反応を生ずる真空処
理装置の排気にターボポンプを使用しても安全運転が可
能になる。By maintaining the temperature of the turbo pump in the heat retention range shown in FIG. 1 using such a method, safe operation is possible even when the turbo pump is used for exhausting a vacuum processing apparatus in which a chemical reaction occurs.
〔発明の効果］
本発明の実施により、ターボポンプ内部での生成物の付
着が抑制でき、ポンプの安定した運転ができるので、半
導体装置の生産効率を向上することができる。[Effects of the Invention] By carrying out the present invention, the deposition of products inside the turbo pump can be suppressed, and the pump can be operated stably, so that the production efficiency of semiconductor devices can be improved.
第１図は本発明に係るターボポンプの運転領域を示す図
、
第２図は本発明に係るスペーサの平面図、第３図は冷却
器を外付けしたターボポンプの構成図、
第４図は空冷ファンを設けたターボポンプの構成図、
第５図は従来のターボポンプの構成図、である。
図において、
１はターボポンプ、
３はガス排出口、
６は保温領域、
８は冷却器、
ＩＯは空冷ファン、
である。
２はガス吸入口、
４は冷却ジャケラ
７はスペーサ、
９は温度センサ、
ト、
本紀［］川用係るターボボシブの運転軸１ｘを示７間第
１ 図
本鈴日月ｌニイ茶ろスペーサの平面間
第 ２［２１
第
斗
図FIG. 1 is a diagram showing the operating range of the turbo pump according to the present invention, FIG. 2 is a plan view of the spacer according to the present invention, FIG. 3 is a configuration diagram of the turbo pump with an external cooler attached, and FIG. FIG. 5 is a block diagram of a turbo pump equipped with an air cooling fan. FIG. 5 is a block diagram of a conventional turbo pump. In the figure, 1 is a turbo pump, 3 is a gas discharge port, 6 is a heat retention area, 8 is a cooler, and IO is an air cooling fan. 2 is a gas inlet, 4 is a cooling jacket, 7 is a spacer, 9 is a temperature sensor, and 7 shows the operating axis 1x of the turbobossive for Honki. 2nd [21st Touzu]
Claims (1)
と、該ロータに対向して設けられているステータとから
なり、真空排気を行うターボポンプにおいて、 ポンプがオーバーヒートしない温度範囲内で該ポンプの
排気流路の温度を高めて運転を行うことを特徴とするタ
ーボポンプ。[Claims] In a turbo pump that performs vacuum evacuation and consists of a rotor that rotates at a circumferential speed similar to the motion speed of gas molecules and a stator that is provided opposite to the rotor, the pump does not overheat. A turbo pump characterized in that the turbo pump is operated by increasing the temperature of the exhaust flow path of the pump within a temperature range.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1283520A JP2854628B2 (en) | 1989-10-31 | 1989-10-31 | Exhaust device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1283520A JP2854628B2 (en) | 1989-10-31 | 1989-10-31 | Exhaust device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03145598A true JPH03145598A (en) | 1991-06-20 |
| JP2854628B2 JP2854628B2 (en) | 1999-02-03 |
Family
ID=17666601
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1283520A Expired - Fee Related JP2854628B2 (en) | 1989-10-31 | 1989-10-31 | Exhaust device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2854628B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998032972A1 (en) * | 1997-01-22 | 1998-07-30 | Seiko Seiki Kabushiki Kaisha | Turbo molecular pump |
| EP1108893A3 (en) * | 1999-12-17 | 2002-05-02 | The BOC Group plc | Temperature control system for vacuum pumps |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61207893A (en) * | 1985-03-09 | 1986-09-16 | ライボルト‐ヘレーウス・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | Casing for turbo molecular vacuum pump |
| JPS6419198A (en) * | 1987-07-15 | 1989-01-23 | Hitachi Ltd | Vacuum pump |
| JPS6431569A (en) * | 1987-07-24 | 1989-02-01 | Tdk Corp | Production of permanent magnet |
| JPS6446495U (en) * | 1987-09-18 | 1989-03-22 | ||
| JPH0325893A (en) * | 1989-06-23 | 1991-02-04 | Pioneer Electron Corp | Electroluminescent display element and manufacture thereof |
-
1989
- 1989-10-31 JP JP1283520A patent/JP2854628B2/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61207893A (en) * | 1985-03-09 | 1986-09-16 | ライボルト‐ヘレーウス・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | Casing for turbo molecular vacuum pump |
| JPS6419198A (en) * | 1987-07-15 | 1989-01-23 | Hitachi Ltd | Vacuum pump |
| JPS6431569A (en) * | 1987-07-24 | 1989-02-01 | Tdk Corp | Production of permanent magnet |
| JPS6446495U (en) * | 1987-09-18 | 1989-03-22 | ||
| JPH0325893A (en) * | 1989-06-23 | 1991-02-04 | Pioneer Electron Corp | Electroluminescent display element and manufacture thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998032972A1 (en) * | 1997-01-22 | 1998-07-30 | Seiko Seiki Kabushiki Kaisha | Turbo molecular pump |
| EP1108893A3 (en) * | 1999-12-17 | 2002-05-02 | The BOC Group plc | Temperature control system for vacuum pumps |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2854628B2 (en) | 1999-02-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4835114A (en) | Method for LPCVD of semiconductors using oil free vacuum pumps | |
| JP2002513888A (en) | Turbomolecular pump with metal matrix composite rotor and stator | |
| JPH0525040B2 (en) | ||
| US20050136691A1 (en) | Method and apparatus for depositing dielectric films | |
| US20070020115A1 (en) | Integrated pump apparatus for semiconductor processing | |
| EP0610666B1 (en) | Turbomolecular pump | |
| JPH03145598A (en) | Turbo pump | |
| JP2002303293A (en) | Turbo-molecular pump | |
| JP5304934B2 (en) | Method for operating vacuum pump and method for manufacturing semiconductor device | |
| JP3941147B2 (en) | Vacuum exhaust apparatus and maintenance method thereof | |
| US6699009B2 (en) | Vacuum pump | |
| JP4916655B2 (en) | Vacuum pump | |
| JP4211320B2 (en) | Vacuum pump | |
| JP2003278692A (en) | Vacuum pump | |
| JP2009209734A (en) | Turbo molecular pump | |
| JPH0338033A (en) | Low temperature etching system | |
| JP2003254284A (en) | Pump device | |
| WO2023228863A1 (en) | Vacuum pump and vacuum evacuation system | |
| JP2005036665A (en) | Molecular drag pump | |
| JP2003090287A (en) | Dry vacuum pump and operating method thereof | |
| JP3080938B1 (en) | Sputtering equipment | |
| JPH0529798B2 (en) | ||
| JPS63266813A (en) | Manufacture of semiconductor device and treating apparatus used therefor | |
| JP2006348765A (en) | Turbo molecular pump | |
| KR100235686B1 (en) | Vacuum exhausting system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |