JPH03143944A - Liquid resin composition for semiconductor - Google Patents
Liquid resin composition for semiconductorInfo
- Publication number
- JPH03143944A JPH03143944A JP28194889A JP28194889A JPH03143944A JP H03143944 A JPH03143944 A JP H03143944A JP 28194889 A JP28194889 A JP 28194889A JP 28194889 A JP28194889 A JP 28194889A JP H03143944 A JPH03143944 A JP H03143944A
- Authority
- JP
- Japan
- Prior art keywords
- resin composition
- liquid resin
- resin
- aminosilane
- solvent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 239000007788 liquid Substances 0.000 title claims description 18
- 239000011342 resin composition Substances 0.000 title claims description 16
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229920001577 copolymer Polymers 0.000 claims abstract description 8
- 239000002904 solvent Substances 0.000 claims abstract description 8
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 claims description 5
- 238000007334 copolymerization reaction Methods 0.000 claims description 4
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical compound FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 2
- 239000011347 resin Substances 0.000 abstract description 19
- 229920005989 resin Polymers 0.000 abstract description 19
- 229910052782 aluminium Inorganic materials 0.000 abstract description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 11
- 238000005260 corrosion Methods 0.000 abstract description 9
- 230000007797 corrosion Effects 0.000 abstract description 9
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 abstract description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 abstract description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 abstract description 4
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 abstract description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 abstract description 2
- 150000002576 ketones Chemical class 0.000 abstract description 2
- 239000002798 polar solvent Substances 0.000 abstract description 2
- 238000013329 compounding Methods 0.000 abstract 2
- 230000001681 protective effect Effects 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- 238000010521 absorption reaction Methods 0.000 description 12
- 239000003822 epoxy resin Substances 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 238000001723 curing Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000001721 transfer moulding Methods 0.000 description 3
- QHQNYHZHLAAHRW-UHFFFAOYSA-N 2-trimethoxysilylethanamine Chemical compound CO[Si](OC)(OC)CCN QHQNYHZHLAAHRW-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 125000005372 silanol group Chemical group 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 description 1
- QJPPPLJETZSLMG-UHFFFAOYSA-N 2-(3-trimethoxysilylpropylamino)ethylurea Chemical compound CO[Si](OC)(OC)CCCNCCNC(N)=O QJPPPLJETZSLMG-UHFFFAOYSA-N 0.000 description 1
- HBVQIMRSZRVFGA-UHFFFAOYSA-N 2-hydroxysilylethanamine Chemical compound NCC[SiH2]O HBVQIMRSZRVFGA-UHFFFAOYSA-N 0.000 description 1
- BHWUCEATHBXPOV-UHFFFAOYSA-N 2-triethoxysilylethanamine Chemical compound CCO[Si](CCN)(OCC)OCC BHWUCEATHBXPOV-UHFFFAOYSA-N 0.000 description 1
- JVRHDWRSHRSHHS-UHFFFAOYSA-N 3-hydroxysilylpropan-1-amine Chemical compound NCCC[SiH2]O JVRHDWRSHRSHHS-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000003125 aqueous solvent Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- KQNPFQTWMSNSAP-UHFFFAOYSA-N isobutyric acid Chemical compound CC(C)C(O)=O KQNPFQTWMSNSAP-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体素子の表面を保護する樹脂に関するもの
であり、更に詳しくは吸水率が大変小さく、かつ半導体
素子表面との密着性に優れ、素子表面のアルミ配線が外
部からの水分の侵入で生じる腐食を防止することを目的
とする半導体用液状樹脂組成物に関するものである。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a resin that protects the surface of a semiconductor element, and more specifically, a resin that has very low water absorption and excellent adhesion to the surface of a semiconductor element. This invention relates to a liquid resin composition for semiconductors whose purpose is to prevent corrosion of aluminum wiring on the surface of a device caused by moisture intrusion from the outside.
半導体素子を有機材料で封止する方法には大きく分けて
2通りあり、1つは金属リードフレームの上に接合され
た素子を固形の樹脂組成物を用いてトランスファーモー
ルドする方法であり、もう1つは液状樹脂&Il威物を
用いて、プリント配線基板等の上に接合された素子をド
ロッピング法により封止する方法である。There are two main ways to encapsulate semiconductor elements with organic materials. One is to transfer mold the element bonded onto a metal lead frame using a solid resin composition, and the other is to transfer mold the element bonded onto a metal lead frame. One is a method of sealing an element bonded onto a printed wiring board or the like by a dropping method using a liquid resin and a liquid resin.
上記のいずれの用途にも優れた接着性や電気的、機械的
特性を有するという点でエポキシ樹脂が多く用いられて
いる。しかしエポキシ樹脂はエピクロルヒドリンという
塩素化合物を原料として用いるため、少量の塩素を含み
、これが樹脂の吸湿とともに、半導体素子のアルミ配線
の腐食を引き起こすという問題がある。Epoxy resins are often used in all of the above applications because they have excellent adhesive properties, electrical properties, and mechanical properties. However, since epoxy resin uses a chlorine compound called epichlorohydrin as a raw material, it contains a small amount of chlorine, which poses a problem in that the resin absorbs moisture and causes corrosion of the aluminum wiring of semiconductor devices.
これを防ぐためあらかじめ素子表面をボリイミド樹脂膜
で被い、その後エポキシ樹脂組成物でトランスファーモ
ールドする手法なども取られることもあるが、ポリイミ
ド樹脂は吸湿し易く、塩素などはある程度防げても素子
表面の水分は逆に多くなりアルミ配線の腐食を起こすと
いう欠点がある。To prevent this, methods such as covering the element surface with a polyimide resin film in advance and then transfer-molding it with an epoxy resin composition are sometimes taken, but polyimide resin easily absorbs moisture, and even if chlorine etc. can be prevented to some extent, the element surface On the other hand, there is a disadvantage that the moisture content increases and causes corrosion of the aluminum wiring.
又、液状樹脂はドロッピング法で使い易くするために低
粘度の硬化剤である 例えばテトラヒドロフタル酸無水
物等の液状の酸無水物が用いられることが多い、しかこ
の様な酸無水物を硬化剤とした場合の硬化物は硬化構造
の中に加水分解し易いエステル結合を多く含むため耐湿
性が劣り、特に半導体用樹脂として必要なプレッシャ・
クツカーテスト(以下PCT試験)では直接樹脂を通っ
て水分が侵入したりあるいは樹脂と基板との界面から水
分の侵入を受は易く、やはり半導体素子のアルミ配線の
腐食を引き起こすという問題があった。In addition, in order to make the liquid resin easier to use in the dropping method, a low-viscosity curing agent is often used. For example, a liquid acid anhydride such as tetrahydrophthalic anhydride is often used. In this case, the cured product contains many ester bonds that are easily hydrolyzed in the cured structure, so its moisture resistance is poor, and it is particularly difficult to handle the pressure and pressure required as a semiconductor resin.
In the Kutzker test (hereinafter referred to as PCT test), there was a problem that moisture could easily penetrate directly through the resin or through the interface between the resin and the substrate, causing corrosion of the aluminum wiring of semiconductor elements. .
本発明は半導体素子保護用の樹脂として上記の様な欠点
を改良し、PCT試験においても半導体素子表面のアル
ミ配線の腐食が起こりにくく、耐湿性に非常に優れた液
状樹脂組成物を提供することにある。The object of the present invention is to provide a liquid resin composition that improves the above-mentioned drawbacks as a resin for protecting semiconductor elements, and is resistant to corrosion of aluminum wiring on the surface of semiconductor elements even in PCT tests, and has excellent moisture resistance. It is in.
本発明は飽和吸水率の少ない特定の下記式CI)で示さ
れるフッ化ビニリデンと6フッ化プロピレンの共重合体
(A)と密着性を向上させるためのCF。The present invention relates to a CF for improving adhesion to a copolymer (A) of vinylidene fluoride and propylene hexafluoride represented by the specific formula CI) having a low saturated water absorption rate.
+ CHz−CF t+i−+CF CF z+−V
・・・(1)アミノシラン(B)と有機溶剤(C)
を必須成分とする液状樹脂組成物であって、(A)の共
重合比m/nが工〜20であり、かつ(A)と(B)の
配合比率(A)/ (B)が10010.3〜1001
5重量部であることを特徴とする半導体用液状樹脂組成
物である。+ CHz-CF t+i-+CF CF z+-V
...(1) Aminosilane (B) and organic solvent (C)
A liquid resin composition having as an essential component, the copolymerization ratio m/n of (A) is ~20, and the blending ratio (A)/(B) of (A) and (B) is 10010. .3~1001
5 parts by weight of a liquid resin composition for semiconductors.
本発明の液状樹脂組成物の特徴は硬化物の吸水率が非常
に小さいことであり、従来の液状樹脂組成物ではPCT
試験(おいて、加水分解を受は易く、吸水率が大きく耐
湿性に非常に弱い。A feature of the liquid resin composition of the present invention is that the water absorption rate of the cured product is extremely low.
In the test, it is easily susceptible to hydrolysis, has a high water absorption rate, and has very low moisture resistance.
また通常のエポキシ樹脂トランスファーモールド材でも
PCT試験においては飽和吸水率は0.7%程度であり
、これは無機充填材が全く吸水しないと仮定したとして
も、バインダーであるエポキシ樹脂が2%程度吸水する
ためである。In addition, even with ordinary epoxy resin transfer molding materials, the saturated water absorption rate in the PCT test is about 0.7%, which means that even if it is assumed that the inorganic filler does not absorb water at all, the epoxy resin as a binder absorbs about 2% of water. This is to do so.
本発明に用いられるフッ化ビニリデンと67)化プロピ
レンとの共重合体であるフッ素樹脂はPCT試験におけ
る飽和吸水率が非常に小さく、0゜05%以下である。The fluororesin, which is a copolymer of vinylidene fluoride and propylene 67) used in the present invention, has a very low saturated water absorption rate in the PCT test, which is 0.05% or less.
ただし、式〔I〕で示される共重合体において共重合比
m/nが20より大きいとフッ素含有率が小さくなり吸
水率が大きくなってしまう。又、m/nが1より小さけ
れば吸水率は小さいが透湿率が大きくなってしまう。However, in the copolymer represented by formula [I], if the copolymerization ratio m/n is greater than 20, the fluorine content will be low and the water absorption will be high. Moreover, if m/n is smaller than 1, the water absorption rate will be low but the moisture permeability will be high.
また一般にフッ素系樹脂は他の物質との非粘着性が強く
、本発明の目的とする用途には半導体素子との密着性が
悪く、そのままでは用いることが出来ず、樹脂そのもの
の吸水率が小さくても半導体素子表面と樹脂との界面か
ら水分が侵入し、アルミ配線が腐食してしまうという不
具合が生してしまう。In addition, fluororesins generally have strong non-adhesiveness with other substances, and cannot be used as they are because they have poor adhesion with semiconductor elements for the purpose of the present invention, and the resin itself has a low water absorption rate. However, moisture intrudes from the interface between the semiconductor element surface and the resin, causing problems such as corrosion of the aluminum wiring.
本発明者等はこの欠点を改良すべく各種の力・ンプリン
グ剤について鋭意検討を重ねた結果、本発明に用いるフ
ッ素形樹脂にアミノシランを添加すると、今まで考えら
れなかったような密着性が著しく向上することを見いだ
し、本発明の目的に到達することが出来たものである。In order to improve this drawback, the inventors of the present invention have conducted extensive studies on various types of strength/sampling agents, and have found that when aminosilane is added to the fluororesin used in the present invention, adhesion is significantly improved, which was previously unimaginable. The present invention has been found to be improved and the object of the present invention has been achieved.
本発明に用いられるアミノシランとは、アミノ基とシラ
ノール基、あるいはアミノ基とシラノール基誘導体とを
併せ持つ化合物であって、例えばアミノエチルシラノー
ル、アミノエチルトリメトキシシラン、アミノエチルト
リエトキシシラン、アミノプロピルシラノール、アミノ
エチルトリメトキシシラン、アミノプロピルトリエトキ
シシラン、γ−(2−ウレイドエチル)アミノプロピル
トリメトキシシラン、T−ウレイドプロピルトリエトキ
シシランなどが挙げられる。The aminosilane used in the present invention is a compound having both an amino group and a silanol group, or an amino group and a silanol group derivative, such as aminoethylsilanol, aminoethyltrimethoxysilane, aminoethyltriethoxysilane, aminopropylsilanol. , aminoethyltrimethoxysilane, aminopropyltriethoxysilane, γ-(2-ureidoethyl)aminopropyltrimethoxysilane, T-ureidopropyltriethoxysilane, and the like.
又、アミノシランの配合量であるが、種々検討した結果
前記式〔I]で示されるフッ素樹脂100重量部に対し
て、アミノシランが0.3重量部から5重量部に適して
いる。Regarding the amount of aminosilane to be blended, as a result of various studies, 0.3 parts by weight to 5 parts by weight of aminosilane is suitable for 100 parts by weight of the fluororesin represented by the above formula [I].
0.3重量部より少ないと密着性向上の効果がほとんど
出なくなってしまう。又、5重量部より多いと密着性に
対してはある程度効果があるものの、PCT試験で過剰
のアミノシランが溶出してしまい、吸水率が高くなって
、半導体素子表面のアルミ腐食を引き起こしてしまう。If the amount is less than 0.3 parts by weight, the effect of improving adhesion will hardly be achieved. Further, if the amount is more than 5 parts by weight, although it has some effect on adhesion, the excess aminosilane will be eluted in the PCT test, increasing the water absorption rate and causing aluminum corrosion on the surface of the semiconductor element.
更に本発明で用いられる有a溶剤はフッ化ビニリデンと
6フッ化プロピレンの共重合体を溶解させるものならば
すべてを用いることができるが、なかでも特にアセトン
、メチルエチルケトン、メチルイソブチルケトンの様な
ケトン系溶剤やジメチルフォルムアミド、ジメチルアセ
トアミド、N−メチル−2−ピロリドンの様な極性溶剤
又はその併用系が優れている。Further, as the aqueous solvent used in the present invention, any solvent that can dissolve the copolymer of vinylidene fluoride and propylene hexafluoride can be used, but in particular, ketones such as acetone, methyl ethyl ketone, and methyl isobutyl ketone can be used. Solvents, polar solvents such as dimethylformamide, dimethylacetamide, N-methyl-2-pyrrolidone, or combinations thereof are excellent.
又、本発明の液状樹脂組成物の加熱硬化においては低沸
点の溶剤を使用した時は低温で、高沸点の溶剤を使用し
た時は高温で行うことが必要であるが、硬化物のボイド
を少なくするためには多段硬化、例えば60〜120°
c/60分→150〜200°C/60分で行うのが好
ましい。In addition, heat curing of the liquid resin composition of the present invention requires curing at low temperature when a low boiling point solvent is used, and at high temperature when using a high boiling point solvent. Multi-stage curing, e.g. 60~120°
C/60 minutes → 150-200°C/60 minutes is preferable.
本発明においてこの他に必要に応じて消泡剤、分散安定
剤、着色剤等を添加しても差し支えがない。In the present invention, there is no problem in adding an antifoaming agent, a dispersion stabilizer, a coloring agent, etc., if necessary.
本発明による液状樹脂組成物を半導体素子表面に塗布し
、加熱硬化した後、エポキシ樹脂でトランスファーモー
ルドすれば、トランスファーモールドだけの場合よりも
著しく耐湿性を向上させる。If the liquid resin composition according to the present invention is applied to the surface of a semiconductor element, cured by heating, and then transfer molded with an epoxy resin, the moisture resistance is significantly improved compared to the case of only transfer molding.
又、本発明の液状樹脂は裸の素子をそのままプリント配
線基板等の上に接合したものの封止樹脂としても有用で
ある。テープオートメ−ティドボンディング(TAB)
方式の半導体素子保護樹脂としては特に有用である。The liquid resin of the present invention is also useful as a sealing resin for bare elements bonded directly onto a printed wiring board or the like. Tape automated bonding (TAB)
It is particularly useful as a semiconductor element protection resin.
〔実施例1〕
下記(r)式で示されるフッ化ビニリデンと6フツ化プ
ロピレンの共重合体で
CF。[Example 1] CF is a copolymer of vinylidene fluoride and propylene hexafluoride represented by the following formula (r).
−(−CHz−CF #−f−CF −CF 2+T−
・・・(1)上ヒ
共重合”$m/n=10のものをジメチルアセドアごド
に濃度が20重貴%になる様に溶解させた。-(-CHz-CF #-f-CF -CF 2+T-
...(1) Above copolymerization The copolymer with $m/n=10 was dissolved in dimethylacetic acid to a concentration of 20%.
この溶液に第1表に示すような配合比でアミノシランを
配合し、スリーワンモーターでよく攪拌し均質な液状封
止用樹脂組成物を得た。Aminosilane was blended into this solution at the blending ratio shown in Table 1, and thoroughly stirred with a three-one motor to obtain a homogeneous liquid sealing resin composition.
この樹脂m酸物をスピンナーを用いてシリコーンウェハ
上に塗布し、100°C/60分→200’C60分で
硬化させてPCT試験条件(125°C12,3気圧、
100%RH)で処理し、シリコーンウェハとの密着性
を調べた。又、同様の工程でこの樹脂組成物をアル込箔
上に流延塗布硬化後、アルミ箔をエンチングによって除
去し厚さ100μmのフィルムを作威し吸水率、透湿率
(JIS−Z−0208)を測定した。This resin m acid was applied onto a silicone wafer using a spinner and cured at 100°C/60 minutes → 200'C for 60 minutes under the PCT test conditions (125°C, 12,3 atm,
100% RH), and the adhesion to the silicone wafer was examined. In addition, in the same process, this resin composition was cast on an aluminized foil and cured, and then the aluminum foil was removed by etching to make a 100 μm thick film, and the water absorption rate and moisture permeability (JIS-Z-0208 ) was measured.
更に模擬素子表面にデイスペンサーを用いて、この樹脂
組成物をドロッピング封止し、上記条件で硬化させた。Furthermore, using a dispenser, this resin composition was drop-sealed onto the surface of the simulated element and cured under the above conditions.
そして、PCT試験条件(125°C,2,3気圧、1
00%RH)で処理しアルミ腐食の発生する時間を調べ
た。Then, the PCT test conditions (125°C, 2.3 atm, 1
00% RH) and the time required for aluminum corrosion to occur was investigated.
用いた模擬素子は5 mm角のシリコーンウェハ上に線
間/線巾が5μmの櫛形パターンにアル兆を蒸着したチ
ップであり、テープオートメイティドポンディング用配
線テープ(銅/ポリイミドフィルム)上に半田バンプに
て接合したものである。The simulated element used was a chip in which aluminum was deposited in a comb-shaped pattern with a line spacing/width of 5 μm on a 5 mm square silicone wafer, and soldered onto a wiring tape (copper/polyimide film) for tape automated bonding. They are joined using bumps.
以上の試験結果を第1表に示す。The above test results are shown in Table 1.
実施例2〜5、比較例1〜6
第1表に示す配合により実施例1と同様に液状樹脂組成
物を作威し、同様の試験を行なった結果を第1表に示す
。Examples 2 to 5, Comparative Examples 1 to 6 Liquid resin compositions were prepared in the same manner as in Example 1 using the formulations shown in Table 1, and the same tests were conducted. Table 1 shows the results.
〔発明の効果]
本発明により得られた半導体用液状樹脂組成物は非常に
吸水率が小さく、かつシリコンウェハとの密着性にも優
れており、従来の半導体素子保護用樹脂m放物では決し
て得られなかったPCT試験に対する信頼性の高い硬化
物が得られ、半導体用として非常に優れているものであ
る。[Effects of the Invention] The liquid resin composition for semiconductors obtained by the present invention has extremely low water absorption and excellent adhesion to silicon wafers, which is far superior to conventional semiconductor element protection resins. A cured product with high reliability in the PCT test, which could not be obtained, was obtained, and is extremely excellent for use in semiconductors.
Claims (1)
ンと6フッ化プロピレンの共重合体 ▲数式、化学式、表等があります▼・・・〔 I 〕 (B)アミノシラン (C)有機溶剤 を必須成分とする液状樹脂組成物で、(A)の共重合比
m/nが1〜20であり、かつ(A)と(B)の配合比
率(A)/(B)が100/0.3〜100/5重量部
であることを特徴とする半導体用液状樹脂組成物。(1) (A) Copolymer of vinylidene fluoride and propylene hexafluoride represented by the following formula [I]▲There are mathematical formulas, chemical formulas, tables, etc.▼... [I] (B) Aminosilane (C) Organic A liquid resin composition containing a solvent as an essential component, in which the copolymerization ratio m/n of (A) is 1 to 20, and the blending ratio (A)/(B) of (A) and (B) is 100/ A liquid resin composition for semiconductors, characterized in that the amount is 0.3 to 100/5 parts by weight.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28194889A JPH03143944A (en) | 1989-10-31 | 1989-10-31 | Liquid resin composition for semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28194889A JPH03143944A (en) | 1989-10-31 | 1989-10-31 | Liquid resin composition for semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03143944A true JPH03143944A (en) | 1991-06-19 |
Family
ID=17646145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP28194889A Pending JPH03143944A (en) | 1989-10-31 | 1989-10-31 | Liquid resin composition for semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03143944A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6432858A (en) * | 1987-07-29 | 1989-02-02 | Shigeo Chikui | Artificial muscle formed by connecting electromagnets |
-
1989
- 1989-10-31 JP JP28194889A patent/JPH03143944A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6432858A (en) * | 1987-07-29 | 1989-02-02 | Shigeo Chikui | Artificial muscle formed by connecting electromagnets |
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