JPH03142382A - Characteristic measuring instrument for high frequency device - Google Patents

Characteristic measuring instrument for high frequency device

Info

Publication number
JPH03142382A
JPH03142382A JP28246589A JP28246589A JPH03142382A JP H03142382 A JPH03142382 A JP H03142382A JP 28246589 A JP28246589 A JP 28246589A JP 28246589 A JP28246589 A JP 28246589A JP H03142382 A JPH03142382 A JP H03142382A
Authority
JP
Japan
Prior art keywords
main body
devices
measurement
high frequency
measuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP28246589A
Other languages
Japanese (ja)
Inventor
Tadaaki Inoue
忠昭 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP28246589A priority Critical patent/JPH03142382A/en
Publication of JPH03142382A publication Critical patent/JPH03142382A/en
Pending legal-status Critical Current

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  • Testing Electric Properties And Detecting Electric Faults (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

PURPOSE:To control the oscillation for DC characteristic measurement to improve the precision and the workability of device test for mass production by storing an object to be measured in an electromagnetic absorber to perform measurement. CONSTITUTION:A measuring jig main body 1 consists of the electromagnetic absorber, and mounting positions 4 are formed as recessed parts by which plural high frequency devices 3 are easily mounted and positioned. A metallic electrode 5 connecting source electrodes 3s of devices 3 in common is provided in parts, where electrodes 3s are placed, around the main body 1. An enclosure 2 consists of an electromagnetic absorber also, and it is surely coupled to the main body 1 by respective projecting parts 7 and recessed parts 6. Mounting spaces of devices 3 are shielded from the outside to control the oscillation in this manner. A measuring signal is supplied to devices 3, and measuring terminal leading-in holes 8 and 9 reaching the electrode 5 are formed and probe needles are inserted through them, and measurement is performed by successive switching.

Description

【発明の詳細な説明】 皮栗圭色赴里公立 本発明は高周波デバイスの特性測定装置に関するもので
、被テストデバイスを装着する治具に関するものである
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an apparatus for measuring characteristics of high frequency devices, and more particularly to a jig for mounting a device under test.

丈来坐技恵 近年、GaAlAs/GaAsの性質を有効に活用した
HE旧を初めとして、化合物半導体MESFETの高性
能化が急速に進み、直接衛星放送受信機の需要の進展に
伴ってこの種の半導体装置の効率的な量産化が検討され
ている。
In recent years, the performance of compound semiconductor MESFETs has rapidly improved, including the HE model that effectively utilizes the properties of GaAlAs/GaAs. Efficient mass production of semiconductor devices is being considered.

ところでデバイスの量産化においては、工程を終了した
デバイスが所定の特性を示すことが必要であり、いずれ
のデバイスにおいても出荷に際して特性試験及びその結
果に基づいた選別が行われる。特にHEMTのような高
周波デバイスでは直流特性は必要不可欠なテスト項目で
あり、そのため工程終了にあたって各デバイス毎にテス
ト信号を入力して直流特性のテストが行われている。
By the way, in the mass production of devices, it is necessary for the devices that have completed the process to exhibit predetermined characteristics, and each device undergoes a characteristic test and selection based on the results before shipping. Particularly in high-frequency devices such as HEMTs, DC characteristics are an essential test item, and therefore, at the end of the process, a test signal is input to each device to test the DC characteristics.

HEMTめように高周波帯域まで高利得を持つデバイス
では、直流特性を測定する場合、通常の半導体デバイス
に使用する測定治具では予期せぬループが形成され、こ
のループによる帰還のために不定な周波数における発振
現象が起こり、デバイスの直流特性が正確に測定できな
いという不都合があった。
When measuring the DC characteristics of a device such as a HEMT that has high gain up to a high frequency band, an unexpected loop is formed with the measurement jig used for normal semiconductor devices, and feedback from this loop causes an undefined frequency. An oscillation phenomenon occurs in this method, and the direct current characteristics of the device cannot be measured accurately.

上記発振現象の発生原因は白色雑音等の雑音電力が帰還
されるためであるとして、従来から不要な交流信号を除
去するためにコイル容量或はフェライトビーズ等を入出
力端子に接続したり、測定系の特性インピーダンスで終
端させて不要な反射波の発生を防止する等の工夫を施し
た測定治具が提案されている。
The cause of the above oscillation phenomenon is that noise power such as white noise is fed back, and conventionally, in order to remove unnecessary AC signals, coil capacitors or ferrite beads, etc. are connected to the input/output terminals, and measurements are taken. Measurement jigs have been proposed that are designed to terminate at the characteristic impedance of the system to prevent the generation of unnecessary reflected waves.

発明が解決しようとする課題 上記工夫された測定治具でも遮断周波数が数十G11z
に及ぶIIEMTのような高周波デバイスでは、発振を
抑制するには十分ではなく、加えて測定治具自身が大掛
かりになって多数のデバイスを短時間に測定することが
困難であり、量産に適用できないという問題があった。
Problems to be Solved by the Invention Even with the above devised measuring jig, the cutoff frequency is several tens of G11z.
In high-frequency devices such as IIEMT, which spans over There was a problem.

本発明は上記問題点に鑑みてなされたもので、高周波デ
バイスの量産化に通した直流特性測定装置を提供するこ
とを目的とする。
The present invention has been made in view of the above problems, and an object of the present invention is to provide a DC characteristic measuring device that can be used for mass production of high frequency devices.

還延吏紅決工1亙泰婁王段 上記目的を達成するために本発明は、複数の高周波デバ
イスを搭載する位置を形成した電磁吸収体からなる本体
と、上記本体に搭載された高周波デバイスを覆う電磁吸
収体からなる蓋体と、本体又は蓋体の少なくとも一方に
形成した上記搭載位置にある高周波デバイスの電極に達
する測定端子導入孔とによって測定治具を構成する。
In order to achieve the above object, the present invention provides a main body made of an electromagnetic absorber forming positions for mounting a plurality of high frequency devices, and a high frequency device mounted on the main body. A measuring jig is constituted by a lid body made of an electromagnetic absorber that covers the body, and a measurement terminal introduction hole formed in at least one of the main body or the lid body and reaching the electrode of the high frequency device at the mounting position.

在−里 測定治具が電磁吸収体で形成されているため雑音は遮断
され、そのため被測定デバイスの入出力端子に達するこ
とはほとんどなく、発振現象を伴うことなく直流特性の
測定を行うことができる。
Because the in-situ measurement jig is made of an electromagnetic absorber, noise is blocked, and therefore it hardly reaches the input/output terminals of the device under test, making it possible to measure DC characteristics without oscillation. can.

また本体に複数のデバイス搭載位置を形成するため、同
じ測定工程で複数のデバイスに対応することができ、量
産時の特性測定に適する。
Furthermore, since multiple device mounting positions are formed on the main body, the same measurement process can handle multiple devices, making it suitable for measuring characteristics during mass production.

夫」「班 本実施例による測定治具は本体とこの本体を覆う蓋体と
からなり、両者間に形成される空間に被測定物である高
周波デバイスが収納されて、直流特性の測定がなされる
The measurement jig according to this embodiment consists of a main body and a lid covering the main body, and a high-frequency device, which is an object to be measured, is housed in the space formed between the two, and the DC characteristics are measured. Ru.

第1図(a)は測定治具の本体lの平面図を示し、第1
図(b)は蓋体2の平面図を示す。上記本体lは電磁吸
収体からなり、はぼ平坦な上面には複数の高周波デバイ
ス3.3・・・を搭載するための位置4.4・・・が形
成されている。この位置4は、第2図(a)の断面図に
示すように高周波デバイス3の搭載及び位置合わせ等が
より容易に行えるように、デバイス外形に対応する窪み
として形成されている。上記各位置4に装着されたデバ
イス3のソース電極3sが位置する部分には、それらソ
ース電極33間を共通に接続するための金属電極5が、
本体lの周囲を巡る形態で設けられている。本体lには
また後述する蓋体2との結合を確実にするため位置合わ
せ凹部6が、デバイス3の搭載に支障を来さない領域に
設けられている。
FIG. 1(a) shows a plan view of the main body l of the measuring jig.
Figure (b) shows a plan view of the lid body 2. The main body l is made of an electromagnetic absorber, and positions 4.4 for mounting a plurality of high frequency devices 3.3 are formed on the substantially flat upper surface. This position 4 is formed as a depression corresponding to the external shape of the device so that the high-frequency device 3 can be more easily mounted and aligned, as shown in the cross-sectional view of FIG. 2(a). At the portion where the source electrodes 3s of the device 3 mounted at each position 4 are located, a metal electrode 5 for commonly connecting the source electrodes 33 is provided.
It is provided in a form that goes around the periphery of the main body l. The main body 1 is also provided with a positioning recess 6 in an area that does not interfere with the mounting of the device 3 in order to ensure the connection with a lid 2 which will be described later.

上記構造からなる本体lに対して、蓋体2も同様に電磁
吸収体からなり、本体lに装着された状態で本体lのデ
バイス搭載空間を外部から遮蔽する。本体1との結合を
確実にするため、第2図(b)に示すように上記四部6
に嵌まり込む凸部7が設けられている。蓋体2には更に
本体lに搭載されたデバイス4に測定信号を供給するた
め、測定端子導入孔8が各デバイス4のゲート、ドレイ
ン雷極位置に対応させて形成され、また共通ソース電極
となる金属電極5に達する測定端子導入孔9が形成され
ている。
For the main body l having the above structure, the lid body 2 is also made of an electromagnetic absorber, and when attached to the main body l, shields the device mounting space of the main body l from the outside. In order to ensure the connection with the main body 1, the four parts 6 are attached as shown in FIG. 2(b).
A convex portion 7 that fits into is provided. In order to supply measurement signals to the devices 4 mounted on the main body 1, the lid body 2 is further formed with measurement terminal introduction holes 8 corresponding to the gate and drain electrode positions of each device 4, and a common source electrode. A measurement terminal introduction hole 9 is formed that reaches the metal electrode 5.

上記測定端子導入孔8,9に測定装置のプローブ針が通
され、先端が各電極に接触して直流特性を測定するため
の信号が転送される。上記蓋体2は、本体1に搭載した
デバイス4の位置合せ及び固定機能を高めるために、第
4図に示すようにデバイス4の形状に対応して押え部材
33を形成することもできる。
The probe needles of the measuring device are passed through the measurement terminal introduction holes 8 and 9, and the tip contacts each electrode to transfer a signal for measuring the DC characteristics. In order to enhance the positioning and fixing function of the device 4 mounted on the main body 1, the lid body 2 can also be formed with a pressing member 33 corresponding to the shape of the device 4, as shown in FIG.

第3図は上記測定治具を用いた高周波デバイスの直流特
性測定装置のブロック図である。測定治具21の各位置
4に装着された高周波デバイス3の電極は、治具21の
蓋体2に形成された測定端子導入孔8,9を通して差し
込まれたプローブ22d、 22g、 22sの先端と
当接して電気的接続され、テスト信号が供給される。上
記プローブ22d、 22g、 22Sはプローバ22
に支持され、切り換えスイッチ23との間が配線されて
いる。上記切り換えスイッチ23は、測定治具21に複
数の高周波デバイス3が装着されていることに対応して
、効率的に測定作業を実施するために配置されている。
FIG. 3 is a block diagram of a DC characteristic measuring apparatus for a high frequency device using the above measuring jig. The electrodes of the high-frequency device 3 attached to each position 4 of the measurement jig 21 are connected to the tips of probes 22d, 22g, and 22s inserted through the measurement terminal introduction holes 8 and 9 formed in the lid 2 of the jig 21. An electrical connection is made in abutment and a test signal is supplied. The probes 22d, 22g, and 22S are probers 22
The switch 23 is supported by the switch 23, and wired between the switch 23 and the changeover switch 23. The changeover switch 23 is arranged to efficiently carry out measurement work in response to the fact that a plurality of high frequency devices 3 are attached to the measurement jig 21.

即ち直流特性測定装置24から出力されるデバイステス
トのためのドレインD、ゲートG、  ソースS電極の
一組の測定信号を、治具21に装着されたデバイス3に
それぞれに順次切り換えて人力するために設けられてい
る。スイッチの切り換えはコントローラ25からの指令
で測定装置24との同期を図りながら行われ、デバイス
3からの出力が測定値として測定装置24に与えられ、
デバイスが所定の特性を確保しくするか否かの判別及び
ランク分けが行われる。このように上記測定装置では一
度の作業で複数のデバイスに対して測定評価を実施する
ことができる。
That is, the measurement signals of a set of drain D, gate G, and source S electrodes for device testing outputted from the DC characteristic measuring device 24 are sequentially switched to each device 3 mounted on the jig 21 for manual input. It is set in. The switching of the switch is performed in synchronization with the measuring device 24 according to a command from the controller 25, and the output from the device 3 is given to the measuring device 24 as a measured value.
Determination and ranking are performed as to whether the device ensures predetermined characteristics or not. In this manner, the measurement apparatus described above can perform measurement and evaluation on a plurality of devices in one operation.

上記実施例ではプローブ22d、 22g、 22sの
先端を治具の蓋体に形成した孔に直接挿入する形態につ
いて説明したが、蓋体の基孔に予め第4図に示すように
電気抵抗の小さい金属柱31を、先端が本体側に突出し
かつ搭載位置のデバイスの電極に達するように寸法調整
して設けることもできる。この構造では、蓋体の上面に
現れた金属柱31の先端にプローブ22d、 22g、
 22sの先端が取り付は易いように凹部32を形成す
ることが望ましい。
In the above embodiment, the tips of the probes 22d, 22g, and 22s are directly inserted into the holes formed in the lid of the jig. The metal column 31 can also be provided with the dimensions adjusted so that the tip thereof protrudes toward the main body and reaches the electrode of the device at the mounting position. In this structure, probes 22d, 22g,
It is desirable to form a recess 32 so that the tip of the 22s can be easily attached.

発1しじ握里 以上のように本発明によれば、被測定物を電磁吸収体に
収納して測定することができるため、直流特性を測定す
る際の発振を充分に抑制することができ、正確な測定を
行うことができて、精度向上が図れるだけでなく、多数
の被測定物を同し測定作業に供給することができ、スル
ープットの大幅な向上が図れ、量産時におけるデバイス
テストの作業性を著しく改善することができる。
As described above, according to the present invention, the object to be measured can be housed in an electromagnetic absorber for measurement, so oscillations when measuring DC characteristics can be sufficiently suppressed. In addition to being able to perform accurate measurements and improve accuracy, it also allows for a large number of objects to be measured at the same time, greatly improving throughput and facilitating device testing during mass production. Workability can be significantly improved.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明による一実施例の平面図、第2図は同実
施例のA−A“断面図、第3図は同実施例を適用した直
流特性測定装置のブロック図、第4図は本発明による他
の実施例の要部断面図である。 1−本体、2−蓋体、3−高周波デバイス。 4−搭載位置、5−金属電極。 6−位置合せ凹部、7−位置合せ凸部。 8.9−一電極端子導入孔。
Fig. 1 is a plan view of an embodiment according to the present invention, Fig. 2 is a sectional view taken along line A-A of the embodiment, Fig. 3 is a block diagram of a DC characteristic measuring device to which the embodiment is applied, and Fig. 4 is a sectional view of essential parts of another embodiment according to the present invention. 1-Main body, 2-Lid body, 3-High frequency device. 4-Mounting position, 5-Metal electrode. 6-Alignment recess, 7- Alignment. Convex portion. 8.9-One electrode terminal introduction hole.

Claims (1)

【特許請求の範囲】[Claims] (1)複数の高周波デバイスを搭載するための位置を形
成した電磁吸収体からなる本体と、上記本体に搭載され
た高周波デバイスを覆う電磁吸収体からなる蓋体と、本
体又は蓋体の少なくとも一方に形成した上記搭載位置に
ある高周波デバイスの電極に達する測定端子導入孔とを
備えてなることを特徴とする高周波デバイスの特性測定
装置。
(1) A main body made of an electromagnetic absorber that forms positions for mounting a plurality of high-frequency devices, a lid made of an electromagnetic absorber that covers the high-frequency devices mounted on the main body, and at least one of the main body or the lid. A measurement terminal introduction hole that reaches the electrode of the high-frequency device at the mounting position, the measurement terminal introduction hole being formed in the mounting position of the high-frequency device.
JP28246589A 1989-10-30 1989-10-30 Characteristic measuring instrument for high frequency device Pending JPH03142382A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28246589A JPH03142382A (en) 1989-10-30 1989-10-30 Characteristic measuring instrument for high frequency device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28246589A JPH03142382A (en) 1989-10-30 1989-10-30 Characteristic measuring instrument for high frequency device

Publications (1)

Publication Number Publication Date
JPH03142382A true JPH03142382A (en) 1991-06-18

Family

ID=17652784

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28246589A Pending JPH03142382A (en) 1989-10-30 1989-10-30 Characteristic measuring instrument for high frequency device

Country Status (1)

Country Link
JP (1) JPH03142382A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005345470A (en) * 2004-06-01 2005-12-15 Samsung Techwin Co Ltd Inspection system of electronic device
JP4730978B1 (en) * 2010-12-29 2011-07-20 泰照 佐伯 Anti-vibration pad

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005345470A (en) * 2004-06-01 2005-12-15 Samsung Techwin Co Ltd Inspection system of electronic device
JP4730978B1 (en) * 2010-12-29 2011-07-20 泰照 佐伯 Anti-vibration pad
JP2012141015A (en) * 2010-12-29 2012-07-26 Yasuteru Saeki Vibration absorbing pad

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