JPS62224948A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS62224948A JPS62224948A JP6934686A JP6934686A JPS62224948A JP S62224948 A JPS62224948 A JP S62224948A JP 6934686 A JP6934686 A JP 6934686A JP 6934686 A JP6934686 A JP 6934686A JP S62224948 A JPS62224948 A JP S62224948A
- Authority
- JP
- Japan
- Prior art keywords
- input
- resonator
- microwave
- output
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000005259 measurement Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 abstract description 2
- 239000000523 sample Substances 0.000 abstract description 2
- 239000004020 conductor Substances 0.000 abstract 5
- 230000005540 biological transmission Effects 0.000 description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical group [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体基板上にリング共振器を形成した半
導体装置に係り、特にそのリング共振器の入力および出
力パッドのパターン形状に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a semiconductor device in which a ring resonator is formed on a semiconductor substrate, and particularly relates to the pattern shape of input and output pads of the ring resonator. .
以下、砒化ガリウムリング共振器を例にとり説明する。 A description will be given below using a gallium arsenide ring resonator as an example.
第２図は従来のリング共振器のパターン形状を示す平面
図であり、図示のようｌこ、半導体基板（１）上に、リ
ング部（２）をはさみ１人力線路（３）と出力線路（４
）が構成されており、入力線路（３）および出力線路（
４）に、それぞれボンディング用の入力パッド（５）お
よび出力パッド（６）が付属している。Fig. 2 is a plan view showing the pattern shape of a conventional ring resonator. 4
) is configured, and the input line (3) and the output line (
4) are each attached with an input pad (5) and an output pad (6) for bonding.
次に、このような従来の入力および出力パッドよりなる
リング共振器の動作ｆこついて説明する。Next, the operation of such a conventional ring resonator comprising input and output pads will be explained.
入力線路（３）に電波を入射したとすると、リング１周
を整数で割った値の波長のとき、リング部（２）におい
て共振が起こり、電波は出力線路（４）に導かれ、それ
以外の波長の」筋合では、電波は入力線路端面で反射す
る。そのときの共振器の周波数応答を第３図に示す。Assuming that a radio wave is input to the input line (3), resonance occurs in the ring part (2) when the wavelength is equal to the value of one circumference of the ring divided by an integer, and the radio wave is guided to the output line (4). At a wavelength of , the radio wave is reflected at the end face of the input line. The frequency response of the resonator at that time is shown in FIG.
第３図において、曲線の尖鋭度を示すＱ値（Ｑ＝ ＩＯ
Ａ諺）は次式で示される。In Figure 3, the Q value (Q = IO
A proverb) is shown by the following formula.
入。Enter.
ここで、αは伝送損、初は真空中の波長、εｒは比誘電
率、ε０は真空の誘電率である。Here, α is the transmission loss, initially the wavelength in vacuum, εr is the relative dielectric constant, and ε0 is the dielectric constant in vacuum.
従って、式〔Ｉ〕かられかるように、伝送損が少ないほ
ど高いＱ値が得られ、その結果として比誘電率εｒを精
度よく計算することができる。ここで、比誘電率εｒは
マイクロストリングライン等を含む半導体装置の設計の
際（こ極めて重要な値である。Therefore, as can be seen from formula [I], the smaller the transmission loss, the higher the Q value can be obtained, and as a result, the relative dielectric constant εr can be calculated with high accuracy. Here, the dielectric constant εr is an extremely important value when designing a semiconductor device including a microstring line or the like.
そこで、マイクロ波測定系と共振回路の間に生じる伝送
損を少なくすることが問題となる。Therefore, it becomes a problem to reduce the transmission loss that occurs between the microwave measurement system and the resonant circuit.
しかしながら、従来のリング共振器の特性を測定する一
合には、リング共振回路を形成した半導体チップを、測
定用治具に固定し、別の絶縁性基板上に形成した伝送線
路を介し、測定系に接続するなどの方法をとつＣおり、
測定するリング共振器と測定系の間（こは、伝送損の原
因となる余分な伝送系があった。However, when measuring the characteristics of a conventional ring resonator, the semiconductor chip on which the ring resonant circuit is formed is fixed to a measurement jig, and the measurement is carried out via a transmission line formed on another insulating substrate. By connecting to the system, etc.,
There was an extra transmission system between the ring resonator to be measured and the measurement system (this caused transmission loss).
従来の半導体装置は以上のように構成されているので、
測定系と共振器とのインピーダンス整合がとれず、電波
を半導体装置に人力する際に反射損失が増大し、共振器
の特性の正確な値が得られないなどの欠点があった。Conventional semiconductor devices are configured as described above, so
There were drawbacks such as impedance matching between the measurement system and the resonator could not be achieved, reflection loss increased when radio waves were manually applied to the semiconductor device, and accurate values of the characteristics of the resonator could not be obtained.
この発明は、上記のようｆｊ問題点を解消するた？ｌ）
ｌこなされたもので、オンウェーハで共振器の特性を
精度よく測定可能な半導体装置を得ることを目的とする
。This invention solves the above-mentioned fj problems. l)
The object of the present invention is to obtain a semiconductor device in which the characteristics of a resonator can be accurately measured on-wafer.
この発明に係る半導体装置は、マイクロ波測定系の信号
線及びそれをはさむ一対のグランド線で構成される（コ
プレナー線路と呼ぶ）ようなグローブニードルに対応す
る入力および出力パッドを共振器のうちの入力線路と出
力線にそれぞれ接続し、グランド線ｌこ対応するパッド
−こ貫通孔を接続したものである。In the semiconductor device according to the present invention, input and output pads corresponding to a globe needle, which is composed of a signal line of a microwave measurement system and a pair of ground lines sandwiching the signal line (referred to as a coplanar line), are connected to one of the resonators. The input line and the output line are connected to each other, and the corresponding pad and the through hole are connected to the ground line.
この発明をこ３ける半導体装ＩＮは、コプレナー線路ｌ
こ対応し、グランド１１１を半導体裏面Ｉこ短距離で接
続する貫通孔Ｉこより、マイクロ波測定系とインピーダ
ンス整合がとれ、リング共振器のマイクロ波特性の正確
な値が得られる。The semiconductor device IN according to this invention has a coplanar line l.
Correspondingly, impedance matching with the microwave measurement system can be achieved through the through hole I which connects the ground 111 to the semiconductor back surface I over a short distance, and accurate values of the microwave characteristics of the ring resonator can be obtained.
以１ぐ、この発明の実施例を図について説明する。 First, embodiments of the present invention will be described with reference to the drawings.
第１図において、（１）は半導体基板、（２）はリング
部、（３）は入力線路、（４）は出力線路、（５）およ
び（６）はマイクロ波測定系中のプローブニードルに対
応する、それぞれ入力パッドおよび出力パッド、（７）
はグランドを基板（１１の裏面に直接接続するために設
けた貫通孔である。In Figure 1, (1) is the semiconductor substrate, (2) is the ring part, (3) is the input line, (4) is the output line, and (5) and (6) are the probe needles in the microwave measurement system. Corresponding input and output pads, respectively, (7)
is a through hole provided for directly connecting the ground to the back surface of the substrate (11).
次に動作について説明する。半導体素子の数ＧＨｚ以上
におけるマイクロ波測定をオンウェーノ１状態で測定す
る場合曇こは、コプレナー線路よりなるグローブニード
ルを半導体の所定の入力および出力パッドζこ接触させ
て行う、いわゆるＲＦプロービング法が用いられている
。とのＲＦクローバ−でかかる発明の半導体装置をマイ
クロ波測定する場合第１図１こおいて、入力パッド（５
）と出力パッド（６）とは直接マイクロ波測定系中のグ
ローブニードルに接続され、伝送損の原因となる余分な
伝送系がななお、上記実施例では半導体基板（１）の物
質としてＧａＡｓを用いたが、Ｓｉまたは他の■−■族
、■−■族化合物半導体でもよい。さらに、実施例の説
明においてＧａＡｓ共振器を用いたが、マイクロ波測定
を行なう、他の半導体素子にも適用できることはいうま
でもない。Next, the operation will be explained. When performing microwave measurements on semiconductor devices at several GHz or higher in an on-wavelength state, the so-called RF probing method is used, in which a globe needle made of a coplanar line is brought into contact with predetermined input and output pads of the semiconductor. It is being When performing microwave measurements on the semiconductor device of the invention using an RF crowbar, the input pad (5) shown in FIG.
) and the output pad (6) are directly connected to the globe needle in the microwave measurement system, and there is no extra transmission system that causes transmission loss.In the above embodiment, GaAs is used as the material of the semiconductor substrate (1). Although Si or other ■-■ group or ■-■ group compound semiconductors may be used. Furthermore, although a GaAs resonator is used in the description of the embodiment, it goes without saying that the present invention can also be applied to other semiconductor devices that perform microwave measurements.
〔発明の効果］
以上のように、この発明ｌこよれば、共振器にマイクロ
波測定系のうちのコプレナー線路に対応する入力および
出力パッドを入力および出力線路に接続し、グランドパ
ッドを半絶縁性基板裏面に短距離で接続するように構成
したので、共振器のマイクロ波特性の正確な値がオンウ
ェーハで得られる。[Effects of the Invention] As described above, according to the present invention, the input and output pads corresponding to the coplanar line of the microwave measurement system are connected to the input and output lines of the resonator, and the ground pad is semi-insulated. Since the resonator is configured to be connected over a short distance to the back surface of the magnetic substrate, accurate values of the microwave characteristics of the resonator can be obtained on-wafer.
第１図はこの発明の一実施例による半導体装置を示す平
面図、第２図は従来の半導体装置を示す平面図、第３図
は共振器の周波数応答を示す図である。
図において、（１）は半導体基板、（５）は入力パッド
、（６）は出力パッド、（７）は貫通孔を示す。
な耶、図中、同一符号は同一、または相当部分を示す。FIG. 1 is a plan view showing a semiconductor device according to an embodiment of the present invention, FIG. 2 is a plan view showing a conventional semiconductor device, and FIG. 3 is a diagram showing the frequency response of a resonator. In the figure, (1) is a semiconductor substrate, (5) is an input pad, (6) is an output pad, and (7) is a through hole. In the figures, the same reference numerals indicate the same or corresponding parts.
Claims (1)
形成された半導体装置において、 マイクロ波測定系のコプレーナ線路に対応する入力パッ
ドおよび出力パッドを上記リング共振器の入力線路およ
び出力線路にそれぞれ接続して設け、 上記入力パッドおよび出力パッドの上記マイクロ波測定
系のグランド線に対応するパッド部分に貫通孔を設け上
記半導体基板の裏面のパッドへの接続距離を短くなるよ
うにしたことを特徴とする半導体装置。(1) In a semiconductor device in which a ring resonator is formed on the surface of a semi-insulating semiconductor substrate, the input and output pads corresponding to the coplanar line of the microwave measurement system are connected to the input and output lines of the ring resonator. A through hole is provided in the pad portion of the input pad and the output pad corresponding to the ground line of the microwave measurement system to shorten the connection distance to the pad on the back surface of the semiconductor substrate. A semiconductor device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6934686A JPS62224948A (en) | 1986-03-26 | 1986-03-26 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6934686A JPS62224948A (en) | 1986-03-26 | 1986-03-26 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62224948A true JPS62224948A (en) | 1987-10-02 |
Family
ID=13399892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6934686A Pending JPS62224948A (en) | 1986-03-26 | 1986-03-26 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62224948A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5658810A (en) * | 1994-04-04 | 1997-08-19 | Motorola | Method of making a sensor for determining a ratio of materials in a mixture |
| WO2004105175A1 (en) * | 2003-05-22 | 2004-12-02 | The Circle For The Promotion Of Science And Engineering | Ring filter and broad-bandpass filter using same |
-
1986
- 1986-03-26 JP JP6934686A patent/JPS62224948A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5658810A (en) * | 1994-04-04 | 1997-08-19 | Motorola | Method of making a sensor for determining a ratio of materials in a mixture |
| WO2004105175A1 (en) * | 2003-05-22 | 2004-12-02 | The Circle For The Promotion Of Science And Engineering | Ring filter and broad-bandpass filter using same |
| US7443271B2 (en) | 2003-05-22 | 2008-10-28 | The Circle For The Promotion Of Science And Engineering | Ring filter wideband band pass filter using therewith |
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