JP2668423B2 - High frequency circuit measuring device - Google Patents
High frequency circuit measuring deviceInfo
- Publication number
- JP2668423B2 JP2668423B2 JP63294755A JP29475588A JP2668423B2 JP 2668423 B2 JP2668423 B2 JP 2668423B2 JP 63294755 A JP63294755 A JP 63294755A JP 29475588 A JP29475588 A JP 29475588A JP 2668423 B2 JP2668423 B2 JP 2668423B2
- Authority
- JP
- Japan
- Prior art keywords
- frequency circuit
- measured
- measurement
- probe
- contact
- Prior art date
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- Testing Electric Properties And Detecting Electric Faults (AREA)
Description
【発明の詳細な説明】 〔概要〕 能動素子又は受動素子を含む高周波回路の特性を、超
高周波帯域まで測定する高周波回路の測定装置に関し、 コプレーナ構造のプローブを用いて正確に高周波回路
の特性を測定することを目的とし、 コプレーナ構造の接触部を有し、高周波特性測定部と
接続したプローブを備えた高周波回路の測定装置に於い
て、金属基板上に固定する被測定高周波回路の両側に測
定基板を固定し、該測定基板に、前記被測定高周波回路
のパッドと接続する信号パッドと、該信号パッドの両側
に配置し、且つ前記金属基板と接続したアースパッドと
を、前記プローブの接触部と接触し得るように設けて構
成した。DETAILED DESCRIPTION OF THE INVENTION [Summary] The present invention relates to a high-frequency circuit measuring device for measuring the characteristics of a high-frequency circuit including an active element or a passive element up to an ultra-high-frequency band. In a high-frequency circuit measuring device that has a contact part with a coplanar structure for the purpose of measurement and has a probe connected to the high-frequency characteristic measuring part, measure on both sides of the measured high-frequency circuit fixed on the metal substrate. A contact portion of the probe, in which a substrate is fixed, and signal pads connected to the pads of the high-frequency circuit to be measured are connected to the measurement substrate and ground pads arranged on both sides of the signal pad and connected to the metal substrate are provided. It is provided so that it can come into contact with.
本発明は、能動素子又は受動素子を含む高周波回路の
特性を、超高周波帯域まで測定する高周波回路の測定装
置に関するものである。The present invention relates to a high-frequency circuit measuring device for measuring characteristics of a high-frequency circuit including an active element or a passive element up to an ultra-high frequency band.
マイクロ波用の電解効果トランジスタやパイポーラ・
トランジスタ等の能動素子又はマイクロストリップライ
ン等によるフィルタ等の受動素子を含むマイクロ波集積
回路（MIC）等の高周波回路の特性を正確に測定するこ
とが必要であり、その為の簡単な測定装置が要望されて
いる。Field effect transistors and microwaves for microwaves
It is necessary to accurately measure the characteristics of high-frequency circuits such as microwave integrated circuits (MIC) that include active elements such as transistors or passive elements such as filters such as microstrip lines. Is requested.
マイクロ波用の電界効果トランジスタ等のＳパラメー
タを測定する場合に、入出力側を50Ωラインとした基板
上に固定したキャリアを用い、そのキャリアを測定治具
に固定して、ネットワークアナライザやＳパラメータテ
ストセット等により測定するものである。When measuring S-parameters such as field effect transistors for microwaves, use a carrier fixed on the substrate with the 50Ω line on the input / output side, and fix the carrier to a measurement jig to use a network analyzer or S-parameters. It is measured by a test set or the like.
このような従来の測定装置は、例えば、第６図に示す
測定治具と、図示を省略したネットワークアナライザや
Ｓパラメータテストセット等とにより構成するものであ
り、測定治具は、金属の本体31上の両側に、50Ωのマイ
クロストリップライン40,41を形成したセラミック基板3
6,37を固定し、マイクロストリップライン40,41と同軸
変換部を介して、本体31の両側の同軸コネクタ44,45を
接続した構成を有するものである。Such a conventional measuring apparatus is composed of, for example, a measuring jig shown in FIG. 6 and a network analyzer, an S parameter test set, etc., which are not shown, and the measuring jig is a metal main body 31. Ceramic board 3 with 50Ω microstrip lines 40 and 41 on both sides
6, 37 are fixed, and coaxial connectors 44, 45 on both sides of the main body 31 are connected to the microstrip lines 40, 41 via a coaxial converter.
又被測定高周波回路が、図示のように、トランジスタ
33とセラミック基板34,35上のマイクロストリップライ
ン38,39とからなるキャリア32の場合、このキャリア32
を測定治具の中央部に固定して、金リボン42,43により
マイクロストリップライン38,40間及び39,41間を接続
し、同軸コネクタ44,45を介してネットワークアナライ
ザに接続して、キャリア32の高周波特性を測定すること
になる。（例えば、IEEE TRANSACTIONS ON MICROWAVE T
HEORY AND TECHNIQUES,VOL.MTT−35,NO.12,DEC.1987,P.
1444〜1455の“Microwave Performance of an Opticall
y Controlled AIGaAs/GaAs High Electron Mobillty Tr
ansistor and GaAs MESFET"を参照）。Also, the high-frequency circuit to be measured is a transistor as shown in the figure.
33 and microstrip lines 38 and 39 on ceramic substrates 34 and 35, the carrier 32
Fixed to the center of the measuring jig, connect the microstrip lines 38, 40 and 39, 41 with gold ribbons 42, 43, and connect them to the network analyzer via coaxial connectors 44, 45. 32 high frequency characteristics will be measured. (For example, IEEE TRANSACTIONS ON MICROWAVE T
HEORY AND TECHNIQUES, VOL.MTT-35, NO.12, DEC.1987, P.
1444-1455 “Microwave Performance of an Opticall
y Controlled AI GaAs / GaAs High Electron Mobillty Tr
ansistor and GaAs MESFET ").
又被測定高周波回路に直接的に接触させるコプレーナ
構造のプローブが開発されている。例えば、第７図の
（ａ）の裏面図及び（ｂ）の側面図に示す構成を有する
ものである。同図に於いて、51は本体、52はセラミック
基板、53は信号ライン、54はアースパターン、55、56−
1,56−２は接触部、57は同軸コネクタ、58はゴム等の弾
性体である。In addition, a probe having a coplanar structure has been developed which directly contacts a high frequency circuit to be measured. For example, it has the structure shown in the back view of FIG. 7A and the side view of FIG. In the figure, 51 is a main body, 52 is a ceramic substrate, 53 is a signal line, 54 is a ground pattern, 55, 56-
Reference numerals 1 and 56-2 denote contact portions, 57 denotes a coaxial connector, and 58 denotes an elastic body such as rubber.
信号ライン53の先端が接触部55となり、その両側にア
ースパターン54の先端の接触部56−1,56−２が形成され
ている。又この接触部55,56−1,56−２を被測定高周波
回路のパッドに接触された時の接触圧力を、弾性体58を
介して与えることができる。又ネットワークアナライザ
等の高周波特性測定部とは、同軸コネクタ57を介して同
軸ケーブルで接続される。The tip of the signal line 53 is a contact portion 55, and the contact portions 56-1, 56-2 at the tip of the ground pattern 54 are formed on both sides thereof. Further, the contact pressure when the contact portions 55, 56-1 and 56-2 are brought into contact with the pad of the high frequency circuit to be measured can be given through the elastic body 58. A high-frequency characteristic measuring unit such as a network analyzer is connected via a coaxial connector 57 with a coaxial cable.
このようなプローブの先端の接触部55,56−1,56−２
で校正を行い、この接触部55,56−1,56−２を被測定の
高周波回路のパッドに直接接触させて測定を行うことに
より、非常に精度の高い測が可能となる。The contact portion 55,56-1,56-2 at the tip of such a probe
By calibrating with and contacting the contact portions 55, 56-1 and 56-2 directly with the pads of the high frequency circuit to be measured, the measurement can be performed with extremely high accuracy.
このようなプローブを用いて高周波特性を測定する為
に、例えば、第８図に示す電極パターンの電界効果トラ
ンジスタが製作されている。即ち、ゲート電極Ｇ及びド
レイン電極Ｄの両側に、アースパターンに相当するソー
ス電極Ｓを形成したものである。従って、プローブの接
触部55をゲート電極Ｇに、接触部56−1,56−２をソース
電極Ｓに接触させて、ネットワークアナライザ等からソ
ース電極Ｇに信号を加え、又他のプローブの接触部55を
ドレイン電極Ｄに、接触部56−1,56−２をソース電極Ｓ
に接触させて、ドレイン電極Ｄの出力信号をネットワー
クアナライザ等に転送することにより、電界効果トラン
ジスタのＳパラケータ等を測定することができる。In order to measure high-frequency characteristics using such a probe, for example, a field-effect transistor having an electrode pattern shown in FIG. 8 has been manufactured. That is, the source electrode S corresponding to the ground pattern is formed on both sides of the gate electrode G and the drain electrode D. Therefore, the contact portion 55 of the probe is brought into contact with the gate electrode G, and the contact portions 56-1, 56-2 are brought into contact with the source electrode S to apply a signal to the source electrode G from a network analyzer or the like. 55 to the drain electrode D and the contact portions 56-1 and 56-2 to the source electrode S.
And the output signal of the drain electrode D is transferred to a network analyzer or the like, so that the S-parameter or the like of the field-effect transistor can be measured.
前述の第６図に示す測定治具を用いた従来例の測定位
置に於いては、ネットワークアナライザ等の高周波特性
測定部から同軸コネクタの部分で校正を行って測定治具
に接続し、キャリア32上のトランジスタ33のＳパラメー
タ等の測定を行うことになるが、同軸コネクタ44,45の
部分に於ける反射の為に、位相の補正のみでは正確なＳ
パラメータを測定することは困難であった。At the measuring position of the conventional example using the measuring jig shown in FIG. 6, the coaxial connector is calibrated from the high frequency characteristic measuring section such as a network analyzer and connected to the measuring jig. The S-parameters and the like of the transistor 33 are measured. However, due to reflection at the coaxial connectors 44 and 45, accurate S-phase correction is required only by correcting the phase.
It was difficult to measure the parameters.
又第７図の（ａ），（ｂ）に示すようなプローブを用
いてトランジスタのＳパラメータ等の測定を行う測定装
置に於いては、例えば、第８図に示すような電極パター
ンを有する場合の測定は可能であるが、第９図に示すよ
うな一般的な電極パターンを有する場合は、プローブの
接触部56−1,56−２が浮いた状態となるから、測定する
ことができないことになる。Also, in a measuring apparatus for measuring S-parameters and the like of a transistor using a probe as shown in FIGS. 7A and 7B, for example, when an electrode pattern as shown in FIG. Can be measured, but when a general electrode pattern as shown in Fig. 9 is used, the measurement cannot be performed because the contact portions 56-1, 56-2 of the probe are in a floating state. become.
又第８図に示すような電極パターンを有する電界効果
トランジスタであっても、そのゲート電極Ｇ及びドレイ
ン電極Ｄを入出力ラインとワイヤボンデングにより接続
した状態の特性、即ち、ワイヤ付きの特性を必要とする
場合があり、その場合に、プローブを用いて正確なＳパ
ラメータを測定したとしても、接続用のワイヤのパラメ
ータを設計時に付加することになるから、それによっ
て、電界効果トランジスタの特性精度が低下することに
なる。Even in the field effect transistor having the electrode pattern as shown in FIG. 8, the characteristics in the state where the gate electrode G and the drain electrode D are connected to the input / output line by the wire bonding, that is, the characteristics with the wire are shown. In some cases, even if the probe is used to measure the accurate S-parameter, the parameter of the wire for connection is added at the time of designing, so that the characteristic accuracy of the field-effect transistor can be improved. Will decrease.
本発明は、コプレーナ構造のプローブを用いて正確に
高周波回路の特性を測定することを目的とするものであ
る。An object of the present invention is to accurately measure the characteristics of a high-frequency circuit using a probe having a coplanar structure.
本発明の高周波回路の測定装置は、コプレーナ構造の
プローブを用いて、接続用のワイヤを含めた高周波特性
を正確に測定できるようにしたものであり、第１図を参
照して説明する。The high-frequency circuit measuring apparatus of the present invention is capable of accurately measuring high-frequency characteristics including a connecting wire by using a probe having a coplanar structure, and will be described with reference to FIG.
コプレーナ構造の接触部を有し、高周波特性測定部１
と接続したプローブ2,3を備え、金属基板４上に固定す
る被測定マイクロ波トランジスタ等の高周波回路８の両
側に測定基板５−1,5−２を固定し、この測定基板５−
1,5−２に、被測定高周波回路８のパッドと接続する信
号パッド６と、この信号パッド６の両側に配置し、金属
基板４と接続したアースパッド７とを、プローブ2,3の
接触部と接触し得るように設けたものである。High frequency characteristic measuring unit 1 with a contact part of coplanar structure
The measurement substrates 5-1 and 5-2 are fixed on both sides of a high-frequency circuit 8 such as a microwave transistor to be measured, which is fixed on the metal substrate 4,
Signal pads 6 connected to the pads of the high-frequency circuit 8 to be measured are connected to 1,5-2, and earth pads 7 arranged on both sides of the signal pad 6 and connected to the metal substrate 4 are connected to the probes 2 and 3. It is provided so that it can come into contact with the part.
マイクロ波トランジスタ等の能動素子を含む高周波回
路或いはフィルタ等の受動素子のみからなる高周波回路
の特性を測定する場合に、この被測定高周波回路８を金
属基板４上に固定し、その高周波回路８のパッドと測定
基板５−1,5−２の信号パッド６とをワイヤ等により接
続する。そして、測定基板５−1,5−２の信号パッド６
と、その両側のアースパッド７とに、コプレーナ構造の
接触部を接触させることにより、ネットワークアナライ
ザ等の高周波特性測定部１により、接続用のワイヤを含
めた高周波回路８のＳパラメータ等の高周波特性を測定
する。When measuring the characteristics of a high-frequency circuit including an active element such as a microwave transistor or a high-frequency circuit including only a passive element such as a filter, the high-frequency circuit 8 to be measured is fixed on the metal substrate 4 and the high-frequency circuit 8 The pads and the signal pads 6 on the measurement substrates 5-1 and 5-2 are connected by wires or the like. Then, the signal pads 6 of the measurement boards 5-1 and 5-2
And the ground pads 7 on both sides thereof are brought into contact with the contact portions of the coplanar structure, so that the high-frequency characteristic measuring unit 1 such as a network analyzer allows the high-frequency characteristics such as S-parameters of the high-frequency circuit 8 including the connecting wires. Is measured.
この場合、プローブ2,3の接触部まで校正することが
できるから、正確な測定が可能となり、又測定基板５−
1,5−２のパラメータも予め測定しておくことができる
から、この特性を測定結果から差し引くことにより、更
に高精度の特性測定が可能となる。In this case, since the contact parts of the probes 2 and 3 can be calibrated, accurate measurement becomes possible, and the measurement board 5-
Since the parameters 1 and 5-2 can be measured in advance, the characteristics can be measured with higher accuracy by subtracting the characteristics from the measurement result.
以下図面を参照して本発明の実施例について詳細に説
明する。Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
第２図は本発明の一実施例の要部斜視図、第３図は要
部断面図であり、11は高周波特性測定部としてのネット
ワークアナライザ、12はコプレーナ構造のプローブ、1
3、14−1,14−２は接触部、15−1,15−２は測定基板、1
6は信号パッド、17−1,17−２はアースパッド、18は被
測定高周波回路としての電界効果トランジスタ、19は金
属基板、20はスルーホール、21,22は接続用のワイヤで
ある。2 is a perspective view of an essential part of an embodiment of the present invention, FIG. 3 is a sectional view of the essential part, 11 is a network analyzer as a high frequency characteristic measuring part, 12 is a probe having a coplanar structure, 1
3, 14-1 and 14-2 are contact parts, 15-1 and 15-2 are measurement boards, 1
6 is a signal pad, 17-1 and 17-2 are ground pads, 18 is a field effect transistor as a high frequency circuit to be measured, 19 is a metal substrate, 20 is a through hole, and 21 and 22 are wires for connection.
測定基板15−1,15−２は、例えば、セラミックにより
構成され、配線パターン形成技術によって信号パッド16
とアースパッド17−1,17−２とが形成されている。又信
号パッド16とアースパッド17−1,17−２との配置間隔
は、プローブ12の接触部13、14−1,14−２とで接触でき
るように構成されている。又信号パッド16の両側のアー
スパッド17−1,17−２は、スルーホール20を介して金属
基板19と接続されている。The measurement boards 15-1 and 15-2 are made of, for example, ceramic, and the signal pads 16 are formed by a wiring pattern forming technique.
And ground pads 17-1 and 17-2 are formed. The arrangement interval between the signal pad 16 and the ground pads 17-1 and 17-2 is configured so as to be able to make contact with the contact portions 13, 14-1 and 14-2 of the probe 12. The ground pads 17-1 and 17-2 on both sides of the signal pad 16 are connected to the metal substrate 19 via the through holes 20.
被測定高周波回路としての電界効果トランジスタ18
は、金錫合金等により金属基板19上に固定される。この
電界効果トランジスタ18の電極パターンは、例えば、第
９図に示す一般的な構成の場合を示し、ソース電極Ｓは
金属基板19と接続され、ドレイン電極Ｄは測定基板15−
１の信号パッド16とワイヤ21により接続され、ゲート電
極Ｇは測定基板15−２の信号パッド16とワイヤ22により
接続される。Field-effect transistor 18 as a high-frequency circuit to be measured
Is fixed on the metal substrate 19 by a gold-tin alloy or the like. The electrode pattern of the field effect transistor 18 is, for example, the case of the general configuration shown in FIG. 9, in which the source electrode S is connected to the metal substrate 19 and the drain electrode D is the measurement substrate 15-.
The gate electrode G is connected to the signal pad 16 of the measurement substrate 15-2 by a wire 22.
プローブ12を測定基板15−１に、図示を省略したプロ
ーブを測定基板15−２にそれぞれ接触させ、それらのプ
ローブをネットワークアナライザ11に接続するものであ
り、例えば、プローブ12の接触部13を信号パッド16に接
触させると、その両側の接触部14−1,14−２はアースパ
ッド17−1,17−２に接触することになるから、コプレー
ナ構造を維持して電界効果トランジスタ18のＳパラメー
タを正確に測定することができる。その場合、接続用の
ワイヤ21,22を含めて測定することができる。The probe 12 is brought into contact with the measurement board 15-1 and the probe (not shown) is brought into contact with the measurement board 15-2, and these probes are connected to the network analyzer 11. For example, the contact section 13 of the probe 12 When the pad 16 is brought into contact, the contact portions 14-1 and 14-2 on both sides thereof come into contact with the ground pads 17-1 and 17-2. Therefore, the coplanar structure is maintained and the S parameter of the field effect transistor 18 is maintained. Can be measured accurately. In that case, the measurement can be performed by including the connecting wires 21 and 22.
第４図は本発明の他の実施例の要部上面図であり、半
波長側結合フィルタからなる高周波回路の特性を測定す
る場合を示し、25−1,25−２は測定基板、26は信号パッ
ド、27−1,27−２はアースパッド、28は被測定高周波回
路、29は金属基板、30,31は接続用のワイヤである。又
プローブと高周波特性測定部とは図示を省略している。FIG. 4 is a top view of a main part of another embodiment of the present invention, showing a case where the characteristics of a high-frequency circuit composed of a half-wavelength side coupling filter are measured, 25-1 and 25-2 are measurement substrates, and 26 is Signal pads, 27-1 and 27-2 are ground pads, 28 is a high-frequency circuit to be measured, 29 is a metal substrate, and 30 and 31 are connection wires. Illustration of the probe and the high-frequency characteristic measuring unit is omitted.
半波長側結合フィルタのような受動回路の場合は、他
の回路構成を接続する為に、信号ラインの端部にパッド
が形成されているだけであるから、そのままではコプレ
ーナ構造のプローブを用いることができない。そこで、
信号パッド26とその両側のアースパッド27−1,27−２と
を有する測定基板25−1,25−２とを金属基板29上に固定
し、その測定基板25−1,25−２間に被測定高周波回路28
を固定して、接続用のワイヤ30,31により被測定高周波
回路28と測定基板25−1,25−２とを接続する。それによ
って、コプレーナ構造のプローブを用いて被測定高周波
回路の高周波特性を正確に測定することができる。In the case of a passive circuit such as a half-wavelength side coupling filter, a pad with a coplanar structure is used as it is because a pad is only formed at the end of the signal line in order to connect other circuit configurations. Can not. Therefore,
A measurement board 25-1, 25-2 having a signal pad 26 and ground pads 27-1, 27-2 on both sides thereof is fixed on a metal board 29, and between the measurement boards 25-1, 25-2. High-frequency circuit to be measured 28
Is fixed, and the high-frequency circuit 28 to be measured and the measurement substrates 25-1, 25-2 are connected by the connecting wires 30, 31. Thereby, the high frequency characteristic of the high frequency circuit to be measured can be accurately measured using the probe having the coplanar structure.
前述のように、コプレーナ構造のプローブの先端まで
校正しておくことにより、被測定高周波回路の高周波特
性を正確に測定することができると共に、接続用のワイ
ヤを含む特性を測定することができる。As described above, by calibrating the tip of the probe having the coplanar structure, it is possible to accurately measure the high-frequency characteristics of the high-frequency circuit to be measured and also to measure the characteristics including the wire for connection.
第５図は前述の実施例によりＳパラメータを測定した
結果を示し、0.5GHz〜26.5GHzの周波数範囲に於ける入
力端からみた反射係数に相当するパラメータS11を曲線
ａ、出力端からみた反射係数に相当するパラメータS22
を曲線ｂで示す。即ち、反射等の影響が殆どなく、コプ
レーナ構造のプローブの特徴を発揮することができた。
なお、第６図に示す従来例の測定治具を用いた場合は、
前述の参考文献にも示されているが、不安定な測定結果
が得られており、反射等の影響が大きいことが判る。FIG. 5 shows the results of measuring S-parameters according to the above-mentioned embodiment. The parameter S 11 corresponding to the reflection coefficient seen from the input end in the frequency range of 0.5 GHz to 26.5 GHz is the curve a and the reflection seen from the output end. Parameter S 22 corresponding to the coefficient
Is shown by the curve b. That is, the characteristics of the probe having the coplanar structure could be exhibited with almost no influence of reflection or the like.
When the conventional measuring jig shown in FIG. 6 is used,
As shown in the above-mentioned reference, unstable measurement results are obtained, and it is understood that the influence of reflection and the like is large.
以上説明したように、本発明は、信号パッド６とその
両側のアースパッド７とを形成した測定基板５−1,5−
２を金属基板４上に固定し、トランジスタ等の能動素子
のみ又はその能動素子を含む高周波回路或いは受動素子
のみからなる高周波回路を、測定基板５−1,5−２間の
金属基板４上に固定して、高周波回路８の信号ラインの
パッドと、測定基板５−1,5−２の信号パッドとをワイ
ヤ等により接続して、コプレーナ構造のプローブ2,3を
用いて高周波特性の測定を行うものであり、被測定高周
波回路８がコプレーナ構造でない場合でも、測定基板５
−1,5−２を有することにより、コプレーナ構造のプロ
ーブ2,3を用いて、ネットワークアナライザ等の高周波
特性測定部１によって測定することができる。As described above, according to the present invention, the measurement substrates 5-1 and 5- in which the signal pads 6 and the ground pads 7 on both sides are formed are provided.
2 is fixed on the metal substrate 4, and a high frequency circuit including only active elements such as transistors or a high frequency circuit including the active elements or only passive elements is provided on the metal substrate 4 between the measurement boards 5-1 and 5-2. Fix and connect the signal line pads of the high frequency circuit 8 to the signal pads of the measurement boards 5-1 and 5-2 with wires or the like, and measure the high frequency characteristics using the coplanar structure probes 2 and 3. Even if the measured high-frequency circuit 8 does not have a coplanar structure, the measurement substrate 5
By having −1,5-2, it is possible to measure by the high frequency characteristic measuring unit 1 such as a network analyzer using the probes 2 and 3 having the coplanar structure.
又コプレーナ構造のプローブ2,3の先端まで校正して
おくことができるから、接続用のワイヤを含めて被測定
高周波回路８のＳパラメータ等の高周波特性を正確に測
定することができる利点がある。Further, since it is possible to calibrate up to the tips of the probes 2 and 3 having the coplanar structure, there is an advantage that high-frequency characteristics such as S-parameters of the high-frequency circuit 8 to be measured including the connecting wires can be accurately measured. .
第１図は本発明の原理説明図、第２図は本発明の一実施
例の要部斜視図、第３図は本発明の一実施例の要部断面
図、第４図は本発明の他の実施例の要部上面図、第５図
はＳパラメータの測定曲線図、第６図は従来例の要部上
面図、第７図（ａ），（ｂ）はプローブの説明図、第８
図及び第９図は電界効果トランジスタの電極パターン説
明図である。 １は高周波特性測定部、2,3はプローブ、４は金属基
板、５−1,5−２は測定基板、６は信号パッド、７−1,7
−２はアースパッド、８は被測定高周波回路である。FIG. 1 is an explanatory view of the principle of the present invention, FIG. 2 is a perspective view of an essential part of an embodiment of the present invention, FIG. 3 is a sectional view of an essential part of an embodiment of the present invention, and FIG. FIG. 5 is a top view of a main part of another embodiment, FIG. 5 is a measurement curve view of S parameters, FIG. 6 is a top view of a main part of a conventional example, and FIGS. 7 (a) and 7 (b) are explanatory views of a probe. 8
FIG. 9 and FIG. 9 are explanatory views of the electrode pattern of the field effect transistor. 1 is a high-frequency characteristic measuring section, 2 and 3 are probes, 4 is a metal substrate, 5-1 and 5-2 are measurement substrates, 6 is a signal pad, 7-1 and 7
Reference numeral -2 is a ground pad, and 8 is a high frequency circuit to be measured.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭63−269071（ＪＰ，Ａ) 特開 平１−158745（ＪＰ，Ａ) 特開 昭63−271947（ＪＰ，Ａ) ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-63-269071 (JP, A) JP-A-1-158745 (JP, A) JP-A-63-271947 (JP, A)
Claims (1)
性測定部（１）と接続したプローブ（2,3）を備えた高
周波回路の測定装置に於いて、 金属基板（４）上に固定する被測定高周波回路（８）の
両側に測定基板（５−1,5−２）を固定し、該測定基板
（５−1,5−２）に、前記被測定高周波回路（８）のパ
ッドと接続する信号パッド（６）と、該信号パッド
（６）の両側に配置し、且つ前記金属基板（４）と接続
したアースパッド（７）とを、前記プローブ（2,3）の
接触部と接触し得るように設けた ことを特徴とする高周波回路の測定装置。1. A high-frequency circuit measuring device having a contact portion having a coplanar structure and having probes (2, 3) connected to a high-frequency characteristic measuring portion (1), fixed on a metal substrate (4). The measurement substrates (5-1, 5-2) are fixed on both sides of the high-frequency circuit (8) to be measured, and the pads of the high-frequency circuit (8) are mounted on the measurement substrates (5-1, 5-2). A signal pad (6) connected to the probe and a ground pad (7) arranged on both sides of the signal pad (6) and connected to the metal substrate (4) are connected to the contact portion of the probe (2, 3). A measuring device for a high-frequency circuit, which is provided so that it can come into contact with.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63294755A JP2668423B2 (en) | 1988-11-24 | 1988-11-24 | High frequency circuit measuring device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63294755A JP2668423B2 (en) | 1988-11-24 | 1988-11-24 | High frequency circuit measuring device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02141675A JPH02141675A (en) | 1990-05-31 |
| JP2668423B2 true JP2668423B2 (en) | 1997-10-27 |
Family
ID=17811882
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63294755A Expired - Fee Related JP2668423B2 (en) | 1988-11-24 | 1988-11-24 | High frequency circuit measuring device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2668423B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6603373B2 (en) | 2000-05-11 | 2003-08-05 | Murata Manufacturing Co., Ltd. | Adjusting method for electrical characteristics of microstrip line filter, duplexer, communication device, and microstrip line type resonator |
-
1988
- 1988-11-24 JP JP63294755A patent/JP2668423B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6603373B2 (en) | 2000-05-11 | 2003-08-05 | Murata Manufacturing Co., Ltd. | Adjusting method for electrical characteristics of microstrip line filter, duplexer, communication device, and microstrip line type resonator |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02141675A (en) | 1990-05-31 |
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