JPH03141169A - Metallized structure of aluminum nitride substrate and bond structure of aluminum nitride substrate with metal plate - Google Patents
Metallized structure of aluminum nitride substrate and bond structure of aluminum nitride substrate with metal plateInfo
- Publication number
- JPH03141169A JPH03141169A JP27738389A JP27738389A JPH03141169A JP H03141169 A JPH03141169 A JP H03141169A JP 27738389 A JP27738389 A JP 27738389A JP 27738389 A JP27738389 A JP 27738389A JP H03141169 A JPH03141169 A JP H03141169A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum nitride
- substrate
- metallized layer
- nitride substrate
- metallized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 61
- 239000000758 substrate Substances 0.000 title claims abstract description 61
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 26
- 239000002184 metal Substances 0.000 title claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 23
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 18
- 239000010937 tungsten Substances 0.000 claims abstract description 18
- 229910017770 Cu—Ag Inorganic materials 0.000 claims abstract description 16
- 239000010936 titanium Substances 0.000 claims abstract description 16
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 15
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000203 mixture Substances 0.000 claims abstract description 10
- 238000005219 brazing Methods 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 238000005121 nitriding Methods 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 238000005476 soldering Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 50
- 239000010949 copper Substances 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 12
- 230000017525 heat dissipation Effects 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007652 sheet-forming process Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 150000003657 tungsten Chemical class 0.000 description 1
Landscapes
- Ceramic Products (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、窒化アルミニウム（ＡＩＮ）基板の表面に、
強固なメタライズ層を形成することのできる窒化アルミ
ニウム基板のメタライズ構造に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention provides a method for forming an aluminum nitride (AIN) substrate on the surface of the aluminum nitride (AIN) substrate.
The present invention relates to a metallized structure of an aluminum nitride substrate capable of forming a strong metallized layer.
また、本発明は、放熱性の良好な窒化アルミニウム基板
と金属板を接合させた窒化アルミニウム基板と金属板の
接合体の構造に関する。The present invention also relates to a structure of a bonded body of an aluminum nitride substrate and a metal plate, in which an aluminum nitride substrate and a metal plate having good heat dissipation properties are bonded.
さらに、具体的にいえば、この窒化アルミニウム基板と
金属板の接合体は、例えば、ＩＣパッケージやパワーダ
イオード等の基板として用いられるものである。More specifically, this bonded body of an aluminum nitride substrate and a metal plate is used as a substrate for, for example, an IC package or a power diode.
［背景技術］
半導体デバイスの高密度化、高速化及び高出力化に伴う
発熱量の増大に対応するため、基板材料としては放熱性
に優れたものが要求されている。[Background Art] In order to cope with the increase in heat generation due to higher density, higher speed, and higher output of semiconductor devices, substrate materials with excellent heat dissipation properties are required.
放熱性に優れた基板材料としては、従来より利用されて
いるアルミナ（Ａ１２０３）に代わり窒化アルミニウム
（以下、ＡＩＮと記す。）からなる基板が注目されてい
る。As a substrate material with excellent heat dissipation properties, a substrate made of aluminum nitride (hereinafter referred to as AIN) is attracting attention instead of the conventionally used alumina (A1203).
しかしながら、実装基板としての放熱性を良好にするた
めには、ヒートシンクとして数１００μｍの金属板をＡ
ＩＮ基板に接合させる必要がある。このため従来にあっ
ては、チタン（Ｔｉ）を添加したロウ材を用いてＡＩＮ
基板に銅（Ｃｕ）板を接合させたものが用いられている
。第２図（ａ） （ｂ）は、従来におけるＡＩＮ基板１
１と銅板１３の接合方法を示す正面図である。まず、第
２図（ａ）に示すように、ΔＩＮ基板１１と銅板１３と
の間にチタン箔１２ａとＣｕ−Ａｇ系ロウ材の箔１２ｂ
を挟んだ後、これに真空中で熱処理を施し、チタンＴ３
１２ ａ及びＣｕ−Ａｇ系ロウ材の箔１２ｂを溶融させ
、このＴｉ−Ｃｕ−Ａｇ系のロウ材１２を挟んで第２図
（ｂ）のようにＡＩＮ基板１１と銅板１３を強固に接合
させている。しかして、この銅板はＡＩＮ基板と一体と
なってヒートシンクとして働き、ＡＩＮ基板の放熱性を
より良好にし、また配線パターンとしても使用できる。However, in order to improve the heat dissipation of the mounting board, it is necessary to use a metal plate of several hundred μm as a heat sink.
It is necessary to bond it to the IN board. For this reason, in the past, titanium (Ti)-added brazing material was used to
A substrate with a copper (Cu) plate bonded to it is used. Figures 2(a) and 2(b) show the conventional AIN board 1.
1 and a copper plate 13; FIG. First, as shown in FIG. 2(a), between the ΔIN board 11 and the copper plate 13, a titanium foil 12a and a Cu-Ag brazing material foil 12b are provided.
After sandwiching the titanium T3, it is heat-treated in vacuum to form titanium T3.
12a and the foil 12b of Cu-Ag brazing material are melted, and the AIN board 11 and the copper plate 13 are firmly bonded with the Ti-Cu-Ag brazing material 12 in between as shown in FIG. 2(b). ing. This copper plate works as a heat sink integrally with the AIN board, improves the heat dissipation of the AIN board, and can also be used as a wiring pattern.
［発明が解決しようとする課題］
しかしながら、上記のような方法で製造された接合体の
構造にあっては、ＡＩＮ基板とＴｉ−Ｃｕ−Ａｇ系のロ
ウ材との間の接合強度は大きいが、熱膨張率の差の大き
なＡＩＮ基板と銅板との間では薄いロウ材の層−層のみ
を介して接合されているので、熱処理後の残留熱応力が
大ぎく、このため熱処理時等に銅板とＡＩＮ基板からな
る接合体が割れたりすることがあった。[Problems to be Solved by the Invention] However, in the structure of the bonded body manufactured by the method described above, although the bonding strength between the AIN substrate and the Ti-Cu-Ag brazing material is high, Since the AIN board and the copper plate, which have a large difference in coefficient of thermal expansion, are bonded through only thin layers of brazing material, the residual thermal stress after heat treatment is large. In some cases, the assembled body made of AIN substrates cracked.
しかして、本発明は斜上の従来例の欠点に鑑みてなされ
たものであり、ＡＩＮ基板と金属板を充分な接合強度で
接合させ、しかも残留熱応力を緩和して熱処理時等にお
ける接合体の破壊を防止することを主な目的としている
。However, the present invention was made in view of the drawbacks of the conventional example of slanting, and it is possible to bond an AIN substrate and a metal plate with sufficient bonding strength, and to alleviate residual thermal stress, so that the bonded body can be easily processed during heat treatment, etc. The main purpose is to prevent the destruction of
［課題を解決するための手段］
本発明の窒化アルミニウム基板のメタライズ構造は、窒
化アルミニウム基板と、この窒化アルミニウム基板の表
面に形成された当該窒化アルミニウム基板と同一組成物
３５〜９０重量％とタングステン６５〜１０重量％とか
らなる第一メタライズ層と、この第一メタライズ層の上
に形成されたタングステン１０〜９９重量％と窒化チタ
ン９０〜１重量％とからなる第二メタライズ層とからな
ることを特徴としている。[Means for Solving the Problems] The metallized structure of the aluminum nitride substrate of the present invention includes an aluminum nitride substrate, 35 to 90% by weight of the same composition as the aluminum nitride substrate formed on the surface of the aluminum nitride substrate, and tungsten. A first metallized layer consisting of 65 to 10% by weight, and a second metallized layer formed on this first metallized layer and consisting of 10 to 99% by weight of tungsten and 90 to 1% by weight of titanium nitride. It is characterized by
また、窒化アルミニウム基板と金属板の接合構造は、窒
化アルミニウム基板と、この窒化アルミニウム基板の表
面に形成された当該窒化アルミニウム基板と同一組成物
３５〜９０重量％とタングステン６５〜ｌＯ重量％とか
らなる第一メタライズ層と、この第一メタライズ層の上
に形成されたタングステン１０〜９９重量％と窒化チタ
ン９０〜１重量％とからなる第二メタライズ層と、さら
に、前記第二メタライズ層の上に積層されたチタン膜と
Ｃｕ−Ａｇ系ロウ材の層と、このＣｕ−Ａｇ系ロウ材の
層の上に重ねられた金属板とがらなり、前記金属板が熱
処理を施すことにより窒化アルミニウム基板に接合され
たことを特徴としている。The bonding structure between the aluminum nitride substrate and the metal plate is made of an aluminum nitride substrate, 35 to 90% by weight of the same composition as the aluminum nitride substrate, and 65 to 10% by weight of tungsten, which is formed on the surface of the aluminum nitride substrate. a second metallized layer formed on the first metallized layer and made of 10 to 99% by weight of tungsten and 90 to 1% by weight of titanium nitride; A titanium film and a layer of Cu-Ag brazing material are stacked on top of each other, and a metal plate is stacked on top of the Cu-Ag brazing material layer, and the metal plate is heat-treated to form an aluminum nitride substrate. It is characterized by being joined.
［作用コ
しかして、タングステンに窒化アルミニウム基板と同一
組成物を添加したものを窒化アルミニウム基板にメタラ
イズすることにより、窒化アルミニウム基板の表面にタ
ングステンメタライズ層（第一メタライズ層）を強固に
接合させることができる。さらに、このタングステンメ
タライズ層の上に窒化チタンにタングステンを加えた第
二メタライズ層を形成することにより、第一メタライズ
層と接合強度の大きな第二メタライズ層を形成すること
ができる。したがって、本発明によれば、第一メタライ
ズ層を介して窒化アルミニウム基板の表面に剥離強度の
大きな窒化チタンメタライズ層（第二メタライズ層）を
形成することができる。[Operation: By metallizing tungsten with the same composition as the aluminum nitride substrate, the tungsten metallization layer (first metallization layer) can be firmly bonded to the surface of the aluminum nitride substrate. Can be done. Further, by forming a second metallized layer made of titanium nitride plus tungsten on this tungsten metallized layer, it is possible to form a second metallized layer having a high bonding strength with the first metallized layer. Therefore, according to the present invention, a titanium nitride metallized layer (second metallized layer) with high peel strength can be formed on the surface of an aluminum nitride substrate via the first metallized layer.
また、窒化アルミニウム基板の表面に強固に形成された
第二メタライズ層の上にチタン膜を介してＣｕ−Ａｇ系
ロウ材の層により金属板をロウ付けしているので、チタ
ン膜が第二メタライズ層の窒化チタンとＣｕ−Ａｇ系ロ
ウ材の層の双方と反応してＣｕ−Ａｇ系ロウ材の層と第
二メタライズ層を強固に結合させる。そして、Ｃｕ−Ａ
ｇ系ロウ材の層と金属板は、前述のごとく接合強度が大
きいので、接合強度の弱い層間部分を生じさせることな
く金属板を＾ＩＮ基板に強固に接合させることができる
。In addition, since the metal plate is brazed with a layer of Cu-Ag brazing material via a titanium film on the second metallization layer firmly formed on the surface of the aluminum nitride substrate, the titanium film becomes the second metallization layer. It reacts with both the titanium nitride layer and the Cu-Ag brazing material layer to firmly bond the Cu-Ag brazing material layer and the second metallized layer. And Cu-A
Since the bonding strength between the G-based brazing material layer and the metal plate is high as described above, the metal plate can be firmly bonded to the ^IN substrate without creating an interlayer portion where the bonding strength is weak.
しかも、ＡＩＮ基板と金属板との間には、Ａ１Ｎ基板と
金属板の中間の熱膨張率を持つ４層が介在しているので
、熱処理時に生じる熱応力がこの中間層によって緩和さ
れ、熱処理時等に接合体が破壊することを防止できる。Moreover, since there are four layers between the AIN substrate and the metal plate that have a coefficient of thermal expansion between that of the A1N substrate and the metal plate, the thermal stress that occurs during heat treatment is alleviated by this intermediate layer, It is possible to prevent the bonded body from being destroyed due to other reasons.
口実流側］ 以下、本発明の実施例を製造順序に従って説明する。Pretext side] Examples of the present invention will be described below in accordance with the manufacturing order.
グリーンシート成形工程においては、ＡＩＮ原料に焼結
助剤としてＹｚＯａを３重量％の割合で添加し、これを
ドクターブレード法等によってシート状に成形し、ＡＩ
Ｎグリーンシートを用意する。また、第一メタライズ層
を形成するための第一ペーストとして、タングステン（
Ｗ）粉末を６５〜１０重量％に前記入ＩＮグリーンシー
トと同一組成物を３５〜９０重量％の割合で添加し、さ
らに必要量の有機ビヒクルを添加したものを用意する。In the green sheet forming process, YzOa is added as a sintering aid to the AIN raw material at a ratio of 3% by weight, and this is formed into a sheet shape by a doctor blade method etc.
N Prepare a green sheet. In addition, tungsten (
W) A powder is prepared by adding the same composition as the IN green sheet at a ratio of 35 to 90% by weight to 65 to 10% by weight of the powder, and further adding the required amount of organic vehicle.
さらに、第二メタライズ層を形成するための第二ペース
トとして窒化チタン（ＴｉＮ）粉末９０〜１重量％に対
してタングステン粉末を１０〜９９重量％の割合で混合
し、さらに必要量の有機ビヒクルを添加したものを用意
する。Furthermore, as a second paste for forming the second metallized layer, tungsten powder is mixed with 90 to 1% by weight of titanium nitride (TiN) powder at a ratio of 10 to 99% by weight, and a required amount of organic vehicle is further added. Prepare the added items.
しかして、ＡＩＮグリーンシートの表裏両面（もしくは
片面）に、前記第一ペーストを塗布し、乾燥させる。次
いで、乾燥した第一ペーストの上から第二ペーストを塗
布し、乾燥させる。ついで、脱バインダー処理を行なっ
てグリーンシート中のバインダー及び各ペースト中の有
機ビヒクルを飛散させる。この後、非酸化性雰囲気中に
おいて、１８５０°Ｃの温度で５時間焼成し、第１図（
ａ）に示すように、ＡＩＮ基板１を焼成すると共に第一
ペーストと第二ペーストをＡＩＮ基板１に焼き付け、Ａ
ＩＮ基板１の上に第一メタライズ層２を形成し、その上
に第二メタライズ層３を形成する。この結果、ＡＩＮ基
板１の表面に第一メタライズ層２を介して窒化チタンを
含んだ第二メタライズ層３が強固に接合される。Then, the first paste is applied to both the front and back surfaces (or one side) of the AIN green sheet and dried. Next, a second paste is applied over the dried first paste and dried. Then, a binder removal process is performed to scatter the binder in the green sheet and the organic vehicle in each paste. After that, it was fired in a non-oxidizing atmosphere at a temperature of 1850°C for 5 hours, and the temperature shown in Fig. 1 (
As shown in a), the AIN board 1 is fired, the first paste and the second paste are baked on the AIN board 1, and the A
A first metallized layer 2 is formed on an IN substrate 1, and a second metallized layer 3 is formed thereon. As a result, the second metallized layer 3 containing titanium nitride is firmly bonded to the surface of the AIN substrate 1 via the first metallized layer 2.
さらに、この第二メタライズ層３の上にヌバッタ等の方
法によってチタン粒子を蒸着させ、薄いチタン膜４を形
成する。このチタン膜４の上に、Ｃｕ−Ａｇ系ロウ材の
ペーストを印刷し、その上に厚さ３００μｍの銅板６を
重ね、真空中において８５０’Ｃで１０分間熱処理を力
伍し、第１図（ｂ）のようなＡＩＮ基板１と銅板６の接
合体を形成する。この結果、チタン膜４によって第二メ
タライズ層３の上にＣｕ−Ａｇ系ロウ材の層５が強固に
形成され、このロウ材の層５によって銅板６がしっがつ
と接合される。Furthermore, titanium particles are deposited on this second metallized layer 3 by a method such as Nubatta to form a thin titanium film 4. On top of this titanium film 4, a paste of Cu-Ag brazing material was printed, and a copper plate 6 with a thickness of 300 μm was placed on top of it, and heat treatment was carried out at 850'C for 10 minutes in a vacuum. A bonded body of the AIN board 1 and the copper plate 6 as shown in FIG. 3(b) is formed. As a result, a Cu--Ag brazing material layer 5 is firmly formed on the second metallized layer 3 by the titanium film 4, and the copper plate 6 is firmly bonded to the copper plate 6 by this brazing material layer 5.
（実験例）
第１表に示すような重量％のタングステンを含んだ第一
ペーストと、同じく第１表に示すような重量％の窒化チ
タンを含んだ第二ペーストを用意し、第−及び第二ペー
ストをＡＩＮグリーンシートの表面に直径３ ｍｍの円
板状に塗布し、この後前記のような工程を実行し、第一
メタライズ層、第二メタライズ層、チタン膜及びＣｕ−
Ａｇ系ロウ材の層を介してＡＩＮ基板に銅板を接合させ
、それぞれ比較例１〜４及び実施例１〜９の試料を製作
した。(Experiment example) A first paste containing tungsten in a weight percent as shown in Table 1 and a second paste containing titanium nitride in a weight percent as shown in Table 1 were prepared. The two pastes were applied on the surface of the AIN green sheet in the shape of a disk with a diameter of 3 mm, and then the above steps were performed to form the first metallized layer, the second metallized layer, the titanium film and the Cu-
A copper plate was bonded to an AIN substrate via a layer of Ag-based brazing material, and samples of Comparative Examples 1 to 4 and Examples 1 to 9 were manufactured, respectively.
さらに各試料の銅板の上に直径２ｍｍのワイヤを半田付
けし、ワイヤを引張ってワイヤが各試料がら外れた時の
引張り強度を測定した。この引張り強度の測定結果を各
ペーストの組成とともに第１表に示す。Furthermore, a wire with a diameter of 2 mm was soldered onto the copper plate of each sample, and the tensile strength when the wire was pulled off from each sample was measured. The results of this tensile strength measurement are shown in Table 1 along with the composition of each paste.
（以下余白）
第１表
この第１表によれば、比較例１〜４では、引１り強度が
２．５〜３．９ｋｇｆ／ｍｍ ２であるのに対し、実力
缶例１〜９では引張り強度５．５ｋｇｆ／ｍｍ ”以上
であり、タングステン６５〜１０重量％の第一ペースト
と、窒化チタンｅ０〜１重量％の第二ペーストを用いる
ことにより引張り強度の大きな接合体を得ることかでき
ることかわかる。(Left below) Table 1 According to Table 1, the tensile strength of Comparative Examples 1 to 4 is 2.5 to 3.9 kgf/mm2, while the tensile strength of Comparative Examples 1 to 9 is 2.5 to 3.9 kgf/mm2. The tensile strength is 5.5 kgf/mm" or more, and by using the first paste containing 65 to 10% by weight of tungsten and the second paste containing 0 to 1% by weight of titanium nitride, it is possible to obtain a joined body with high tensile strength. I understand.
［発明の効果］
本発明によれば、第一メタライズ層を介在させることに
より、窒化アルミニウム基板の表面に窒化チタンとタン
グステンからなる第二メタライズ層を強固に形成するこ
とができ、第二メタライズ層の剥離強度を高めることが
できる。しかして、このメタライズされた窒化アルミニ
ウム基板は、例えば金属板との接合用の優れたメタライ
ズ基板として使用することができる。[Effects of the Invention] According to the present invention, by interposing the first metallized layer, the second metallized layer made of titanium nitride and tungsten can be firmly formed on the surface of the aluminum nitride substrate, and the second metallized layer can increase the peel strength of Therefore, this metallized aluminum nitride substrate can be used as an excellent metallized substrate for bonding with a metal plate, for example.
また、本発明に係る接合体は、窒化アルミニウム基板の
表面に形成された強固な第二メタライズ層の上にチタン
膜とＣｕ−Ａｇ系ロウ材の層を介して金属板を接合させ
ているので、窒化アルミニウム基板から金属板までの間
に接合強度の弱い部分がなく、金属板を窒化アルミニウ
ム基板により強固に接合させることができる。しかも、
窒化アルミニウム基板と金属板との間に形成された４層
により、窒化アルミニウム基板と金属板の熱膨張率の違
いを吸収させることができ、接合体内部の熱応力を緩和
し、熱処理時等における接合体の破損等を防止すること
ができ、接合体の信頼性を向上させることができる。Furthermore, in the bonded body according to the present invention, the metal plate is bonded to the strong second metallized layer formed on the surface of the aluminum nitride substrate via the titanium film and the Cu-Ag brazing material layer. There is no weak bonding strength between the aluminum nitride substrate and the metal plate, and the metal plate can be more firmly bonded to the aluminum nitride substrate. Moreover,
The four layers formed between the aluminum nitride substrate and the metal plate can absorb the difference in thermal expansion coefficient between the aluminum nitride substrate and the metal plate, alleviate thermal stress inside the bonded body, and reduce stress during heat treatment, etc. Damage to the joined body can be prevented, and reliability of the joined body can be improved.
第１図（ａ） （ｂ）は本発明の一実施例を示す正面図
、第２図（ａ） （ｂ）は従来例の正面図である。
１・・・窒化アルミニウム基板
２・・・第一メタライズ層
３・・・第二メタライズ層
４・・・チタン月莫
５・・・Ｃｕ−Ａｇ系ロウ材の層
６・・・銅板
３６
１・・・窒化アルミニウム基板。
（ａ）
（ａ）
第
図
（ｂ）
（ｂ）FIGS. 1(a) and 1(b) are front views showing an embodiment of the present invention, and FIGS. 2(a) and 2(b) are front views of a conventional example. 1... Aluminum nitride substrate 2... First metallized layer 3... Second metallized layer 4... Titanium layer 5... Cu-Ag brazing material layer 6... Copper plate 36 1. ...Aluminum nitride substrate. (a) (a) Figure (b) (b)
Claims (2)
基板の表面に形成された当該窒化アルミニウム基板と同
一組成物３５〜９０重量％とタングステン６５〜１０重
量％とからなる第一メタライズ層と、この第一メタライ
ズ層の上に形成されたタングステン１０〜９９重量％と
窒化チタン９０〜１重量％とからなる第二メタライズ層
とからなることを特徴とする窒化アルミニウム基板のメ
タライズ構造。(1) an aluminum nitride substrate, a first metallized layer formed on the surface of the aluminum nitride substrate and consisting of 35 to 90% by weight of the same composition as the aluminum nitride substrate and 65 to 10% by weight of tungsten; A metallized structure of an aluminum nitride substrate, comprising a second metallized layer formed on a metallized layer and made of 10 to 99% by weight of tungsten and 90 to 1% by weight of titanium nitride.
基板の表面に形成された当該窒化アルミニウム基板と同
一組成物３５〜９０重量％とタングステン６５〜１０重
量％とからなる第一メタライズ層と、この第一メタライ
ズ層の上に形成されたタングステン１０〜９９重量％と
窒化チタン９０〜１重量％とからなる第二メタライズ層
と、 さらに、前記第二メタライズ層の上に積層されたチタン
膜とＣｕ−Ａｇ系ロウ材の層と、このＣｕ−Ａｇ系ロウ
材の層の上に重ねられた金属板とからなり、前記金属板
が熱処理を施すことにより窒化アルミニウム基板に接合
されたことを特徴とする窒化アルミニウム基板と金属板
の接合構造。(2) an aluminum nitride substrate, a first metallized layer formed on the surface of the aluminum nitride substrate and consisting of 35 to 90% by weight of the same composition as the aluminum nitride substrate and 65 to 10% by weight of tungsten; a second metallized layer made of 10 to 99% by weight of tungsten and 90 to 1% by weight of titanium nitride formed on the metallized layer; further, a titanium film and Cu-Ag laminated on the second metallized layer; A nitriding method comprising a layer of a Cu-Ag-based brazing material and a metal plate stacked on the layer of the Cu-Ag-based brazing material, and the metal plate is bonded to an aluminum nitride substrate by heat treatment. Bonded structure of aluminum substrate and metal plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1277383A JPH07108825B2 (en) | 1989-10-24 | 1989-10-24 | Metallized structure of aluminum nitride substrate and bonded structure of aluminum nitride substrate and metal plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1277383A JPH07108825B2 (en) | 1989-10-24 | 1989-10-24 | Metallized structure of aluminum nitride substrate and bonded structure of aluminum nitride substrate and metal plate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03141169A true JPH03141169A (en) | 1991-06-17 |
| JPH07108825B2 JPH07108825B2 (en) | 1995-11-22 |
Family
ID=17582763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1277383A Expired - Fee Related JPH07108825B2 (en) | 1989-10-24 | 1989-10-24 | Metallized structure of aluminum nitride substrate and bonded structure of aluminum nitride substrate and metal plate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07108825B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07309688A (en) * | 1994-05-18 | 1995-11-28 | Denki Kagaku Kogyo Kk | Insulating heat radiating plate |
| JP2007022908A (en) * | 2005-06-16 | 2007-02-01 | Ngk Spark Plug Co Ltd | Ceramic joined body and ceramic heater |
-
1989
- 1989-10-24 JP JP1277383A patent/JPH07108825B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07309688A (en) * | 1994-05-18 | 1995-11-28 | Denki Kagaku Kogyo Kk | Insulating heat radiating plate |
| JP2007022908A (en) * | 2005-06-16 | 2007-02-01 | Ngk Spark Plug Co Ltd | Ceramic joined body and ceramic heater |
| JP4641006B2 (en) * | 2005-06-16 | 2011-03-02 | 日本特殊陶業株式会社 | Ceramic joined body and ceramic heater |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07108825B2 (en) | 1995-11-22 |
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