JPH03125252U - - Google Patents
Info
- Publication number
- JPH03125252U JPH03125252U JP3453090U JP3453090U JPH03125252U JP H03125252 U JPH03125252 U JP H03125252U JP 3453090 U JP3453090 U JP 3453090U JP 3453090 U JP3453090 U JP 3453090U JP H03125252 U JPH03125252 U JP H03125252U
- Authority
- JP
- Japan
- Prior art keywords
- section
- silicon substrate
- ion response
- integrated circuit
- sfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 230000003071 parasitic effect Effects 0.000 claims 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Description
第１図〜第５図は本考案の一実施例を示し、第
１図は本考案に係るシート型電極用ＩＳＦＥＴデ
バイスの一例を示す平面図、第２図および第３図
はそれぞれ集積化回路部の構成例を示す回路図、
第４図および第５図は前記デバイスを組み込んだ
ｐＨ複合電極の平面図および断面図である。第６
図は本考案の基礎となつたシート型電極用ＩＳＦ
ＥＴデバイスの構成を示す断面図である。
１……シリコン基板、２……イオン応答部、３
……集積化回路部、５……補正容量部、９……分
離型ＩＳＦＥＴ。
1 to 5 show an embodiment of the present invention, FIG. 1 is a plan view showing an example of a sheet-type electrode ISFET device according to the present invention, and FIGS. 2 and 3 are integrated circuits, respectively. A circuit diagram showing an example of the configuration of the section,
Figures 4 and 5 are plan and cross-sectional views of a pH composite electrode incorporating the device. 6th
The figure shows ISF for sheet-type electrodes, which is the basis of this invention.
FIG. 2 is a cross-sectional view showing the configuration of an ET device. 1...Silicon substrate, 2...Ion response section, 3
...Integrated circuit section, 5...Correction capacitance section, 9...Separate type ISFET.
Claims (1)
ＳＦＥＴを備えた集積化回路部と、前記シリコン
基板とイオン応答部との間の寄生容量を補償する
補正容量部とを設けたことを特徴とするシート型
電極用ＩＳＦＥＴデバイス。 An ion response section and a separate type I on a silicon substrate.
An ISFET device for a sheet type electrode, comprising an integrated circuit section including an SFET, and a correction capacitance section that compensates for parasitic capacitance between the silicon substrate and the ion response section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3453090U JPH03125252U (en) | 1990-03-31 | 1990-03-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3453090U JPH03125252U (en) | 1990-03-31 | 1990-03-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03125252U true JPH03125252U (en) | 1991-12-18 |
Family
ID=31539082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3453090U Pending JPH03125252U (en) | 1990-03-31 | 1990-03-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03125252U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002001215A1 (en) * | 2000-06-29 | 2002-01-03 | Yamatake Corporation | Integrated sensor device and measuring system using the same |
| JP2003004697A (en) * | 2000-12-22 | 2003-01-08 | Seiko Epson Corp | Sensor cell |
-
1990
- 1990-03-31 JP JP3453090U patent/JPH03125252U/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002001215A1 (en) * | 2000-06-29 | 2002-01-03 | Yamatake Corporation | Integrated sensor device and measuring system using the same |
| US6798184B2 (en) | 2000-06-29 | 2004-09-28 | Yamatake Corporation | Integrated sensor device and measuring system using the same |
| JP2003004697A (en) * | 2000-12-22 | 2003-01-08 | Seiko Epson Corp | Sensor cell |