JPH03122555U - - Google Patents

Info

Publication number
JPH03122555U
JPH03122555U JP3139890U JP3139890U JPH03122555U JP H03122555 U JPH03122555 U JP H03122555U JP 3139890 U JP3139890 U JP 3139890U JP 3139890 U JP3139890 U JP 3139890U JP H03122555 U JPH03122555 U JP H03122555U
Authority
JP
Japan
Prior art keywords
semiconductor device
utility
scope
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3139890U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP3139890U priority Critical patent/JPH03122555U/ja
Publication of JPH03122555U publication Critical patent/JPH03122555U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Microwave Amplifiers (AREA)
  • Amplifiers (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの考案の一実施例によるFET増幅
器を示す回路図、第2図は従来のFET増幅器を
示す回路図である。 図において、1……FET半導体装置、2,3
……キヤパシタ、4,5……インダクタ、8……
ゲート電圧源、9……ドレイン電圧源、10……
FETチツプ、11,12……インダクタ、13
……キヤパシタ、14……抵抗、15……可変抵
抗を示す。なお、図中、同一符号は同一、または
相当部分を示す。
FIG. 1 is a circuit diagram showing an FET amplifier according to an embodiment of this invention, and FIG. 2 is a circuit diagram showing a conventional FET amplifier. In the figure, 1...FET semiconductor device, 2, 3
...Capacitor, 4, 5...Inductor, 8...
Gate voltage source, 9...Drain voltage source, 10...
FET chip, 11, 12...Inductor, 13
... Capacitor, 14 ... Resistor, 15 ... Variable resistance. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 電界効果トランジスタチツプとゲートバイアス
回路とを備えたことを特徴とするマイクロ波半導
体装置。
A microwave semiconductor device comprising a field effect transistor chip and a gate bias circuit.
JP3139890U 1990-03-27 1990-03-27 Pending JPH03122555U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3139890U JPH03122555U (en) 1990-03-27 1990-03-27

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3139890U JPH03122555U (en) 1990-03-27 1990-03-27

Publications (1)

Publication Number Publication Date
JPH03122555U true JPH03122555U (en) 1991-12-13

Family

ID=31534152

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3139890U Pending JPH03122555U (en) 1990-03-27 1990-03-27

Country Status (1)

Country Link
JP (1) JPH03122555U (en)

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