JPH0288316U - - Google Patents

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Publication number
JPH0288316U
JPH0288316U JP17003988U JP17003988U JPH0288316U JP H0288316 U JPH0288316 U JP H0288316U JP 17003988 U JP17003988 U JP 17003988U JP 17003988 U JP17003988 U JP 17003988U JP H0288316 U JPH0288316 U JP H0288316U
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
applying
drain
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17003988U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP17003988U priority Critical patent/JPH0288316U/ja
Publication of JPH0288316U publication Critical patent/JPH0288316U/ja
Pending legal-status Critical Current

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  • Amplifiers (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの考案の一実施例によるアンプ温度
保護回路を示す回路図、第2図は従来のアンプ温
度保護回路の回路図である。 1…信号の入力端子、2…信号の出力端子、3
…電界効果トランジスタ、4,5…分圧抵抗、6
…ゲートバイアス端子、7…ドレインバイアス端
子、8…高温超電導体。なお、図中、同一符号は
同一、又は相当部分を示す。
FIG. 1 is a circuit diagram showing an amplifier temperature protection circuit according to an embodiment of this invention, and FIG. 2 is a circuit diagram of a conventional amplifier temperature protection circuit. 1... Signal input terminal, 2... Signal output terminal, 3
...Field effect transistor, 4, 5...Voltage dividing resistor, 6
...Gate bias terminal, 7...Drain bias terminal, 8...High temperature superconductor. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 電界効果トランジスタと、この電界効果トラン
ジスタのゲートにバイアス電圧を印加する分圧抵
抗と高温超電導体と、ゲートバイアス端子と、前
記電界効果トランジスタのドレインにバイアス電
圧を印加するドレインバイアス端子とを備えたこ
とを特徴とするアンプ温度保護回路。
A field effect transistor, a voltage dividing resistor for applying a bias voltage to the gate of the field effect transistor, a high temperature superconductor, a gate bias terminal, and a drain bias terminal for applying a bias voltage to the drain of the field effect transistor. An amplifier temperature protection circuit characterized by:
JP17003988U 1988-12-26 1988-12-26 Pending JPH0288316U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17003988U JPH0288316U (en) 1988-12-26 1988-12-26

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17003988U JPH0288316U (en) 1988-12-26 1988-12-26

Publications (1)

Publication Number Publication Date
JPH0288316U true JPH0288316U (en) 1990-07-12

Family

ID=31460627

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17003988U Pending JPH0288316U (en) 1988-12-26 1988-12-26

Country Status (1)

Country Link
JP (1) JPH0288316U (en)

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