JPH03120370A - Photo-cvd device - Google Patents
Photo-cvd deviceInfo
- Publication number
- JPH03120370A JPH03120370A JP25492989A JP25492989A JPH03120370A JP H03120370 A JPH03120370 A JP H03120370A JP 25492989 A JP25492989 A JP 25492989A JP 25492989 A JP25492989 A JP 25492989A JP H03120370 A JPH03120370 A JP H03120370A
- Authority
- JP
- Japan
- Prior art keywords
- light
- substrate
- light source
- reaction chamber
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000006243 chemical reaction Methods 0.000 claims abstract description 19
- 239000010409 thin film Substances 0.000 claims abstract description 17
- 230000005540 biological transmission Effects 0.000 claims description 21
- 230000003287 optical effect Effects 0.000 claims description 10
- 239000002994 raw material Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 abstract description 3
- 239000007795 chemical reaction product Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 11
- 239000010408 film Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- -1 diborane Chemical compound 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007348 radical reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、光化学反応を利用して被処理基板上に薄膜を
堆積する光ＣＶＤ装置の改良に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an improvement in a photo-CVD apparatus that deposits a thin film on a substrate to be processed using a photochemical reaction.
−Ｘ従来の技術）
近年、シラン（Ｓ ｉ Ｈ４） ＊ ジボラン（８２Ｈ
６）あるいはホスフィン（ＰＨ３）等の原料ガスを光エ
ネルギーにより反応・分解させて薄膜を形成する光ＣＶ
Ｄ法が注目されている。この光ＣＶＤ法は、従来の熱エ
ネルギーにより原料を分解する熱ＣＶＤ法に比べ、より
低温で膜形成を行うことができる。また、プラズマによ
り原料ガスを分解するプラズマＣＶＤ法と比較して、光
ＣＶＤ法は、ラジカル反応のみで膜形成が行えることか
ら薄膜形成下地基板に荷電粒子による損傷を与えない点
や、光が照射されている場所でのみ膜形成が起こるため
膜欠陥の原因となる粉体の発生が少ない点等で優れてお
り、高品質の薄膜を形成する方法として期待されている
。-X conventional technology) In recent years, silane (S i H4) * diborane (82H
6) Or optical CV in which a raw material gas such as phosphine (PH3) is reacted and decomposed using light energy to form a thin film.
Method D is attracting attention. This photo-CVD method can form a film at a lower temperature than the conventional thermal CVD method in which raw materials are decomposed using thermal energy. In addition, compared to the plasma CVD method, which decomposes the raw material gas using plasma, the photo-CVD method can form a film using only radical reactions, so the substrate on which the thin film is formed is not damaged by charged particles, and the light irradiation method This method is excellent in that it generates less powder, which can cause film defects, because film formation occurs only where the film is exposed, and is expected to be a method for forming high-quality thin films.
第６図は、従来の光ＣＶＤ装置を模式的に示した概略構
成図である。図中１０は真空容器、１１は仕切りとして
作用する光透過窓、１４はＯリング、１２は反応室、１
３は光源室、２１は被処理基板、２２は支持台、２３は
ヒータ、２４は原料ガス供給系、２５はガス排気系、３
１は低圧水銀ランプ等の光源、３２は反射板を示してい
る。なお、光源室１３内は窒素ガスによりパージされて
いる。この装置では、原料ガス供給系２４及びガス排気
系２５により反応室１２内の圧力を所望の値に制御する
と共に、ヒータ２３により被処理基板２１の温度を所望
の値に制御する。そして、光源３１を点灯しその光エネ
ルギーにより原料ガスを反応・分解することにより、被
処理基板２１表面上に薄膜が堆積される。FIG. 6 is a schematic configuration diagram schematically showing a conventional optical CVD apparatus. In the figure, 10 is a vacuum container, 11 is a light transmission window that acts as a partition, 14 is an O-ring, 12 is a reaction chamber, 1
3 is a light source chamber, 21 is a substrate to be processed, 22 is a support stand, 23 is a heater, 24 is a source gas supply system, 25 is a gas exhaust system, 3
1 is a light source such as a low-pressure mercury lamp, and 32 is a reflecting plate. Note that the inside of the light source chamber 13 is purged with nitrogen gas. In this apparatus, the pressure within the reaction chamber 12 is controlled to a desired value by a source gas supply system 24 and a gas exhaust system 25, and the temperature of the substrate to be processed 21 is controlled to a desired value by a heater 23. Then, a thin film is deposited on the surface of the substrate 21 to be processed by turning on the light source 31 and reacting and decomposing the source gas with the light energy.
例えば、原料ガスとしてシランを用いた場合、上記反応
により被処理基板２１表面上にアモルファスシリコン膜
が堆積されることになる。For example, when silane is used as the raw material gas, an amorphous silicon film is deposited on the surface of the substrate 21 to be processed by the above reaction.
しかしながら、このような光ＣＶＤ装置の場合、光源に
は特有の光強度分布があるため、基板２１表面上には−
様な光エネルギーが照射されず、形成される薄膜に膜厚
分布の不均一が発生する。膜厚分布を少なくする為に光
透過窓１１に比べて大きな光源を使用するという方法が
考えられるが、これでは光ＣＶＤ装置が大型化してしま
う問題があった。However, in the case of such a photo-CVD apparatus, since the light source has a unique light intensity distribution, -
As a result, the thin film formed has uneven thickness distribution. In order to reduce the film thickness distribution, it is possible to use a light source larger than the light transmitting window 11, but this method has the problem of increasing the size of the photoCVD apparatus.
（発明が解決しようとする課題）
以上のように従来の光ＣＶＤ装置には、被処理基板表面
上に−様な厚さでもって膜が形成されず、これがその後
のデバイス形成工程で形成でされるデバイスの品質に悪
影響を与えるという問題があった。(Problems to be Solved by the Invention) As described above, in the conventional photoCVD apparatus, a film with a certain thickness cannot be formed on the surface of the substrate to be processed, and this film cannot be formed in the subsequent device forming process. There was a problem in that it had a negative impact on the quality of the devices used.
本発明は上記事情を考慮してなされたもので、その目的
とするところは被処理基板表面に−様な膜厚の薄膜を堆
積、することができる光ＣＶＤ装置を提供することにあ
る。The present invention has been made in consideration of the above circumstances, and an object thereof is to provide a photo-CVD apparatus that can deposit a thin film with a thickness of -100 nm on the surface of a substrate to be processed.
［発明の構成］
＜Ｒ’ＸＪを解決するための手段）
本発明に係わる光ＣＶＤ装置は、光源と基板の間に光源
から照射される光の強度分布を均一化する手段を設けた
ことを特徴とする。[Structure of the Invention] <Means for Solving R'XJ) The optical CVD apparatus according to the present invention is provided with a means for uniformizing the intensity distribution of light emitted from the light source between the light source and the substrate. Features.
具体的には例えば、光透過窓に、光強度分布に応じて光
を分散あるいは収束させるようなレンズ作用を持たせる
。あるいは、光透過窓に光強度分布を相殺するような透
過率特性を持たせるか、光透過窓とは別に同様の特性を
付加したフィルタを配置する。Specifically, for example, the light transmitting window is provided with a lens function that disperses or converges light depending on the light intensity distribution. Alternatively, the light transmission window may be provided with a transmittance characteristic that cancels out the light intensity distribution, or a filter with similar characteristics may be arranged separately from the light transmission window.
（作 用）
光源からの光を、その強度分布を均一化して被処理基板
に照射することにより、−様な膜厚の薄膜を得ることが
できる。(Function) By irradiating the substrate to be processed with light from a light source with a uniform intensity distribution, a thin film with a film thickness of - can be obtained.
（実施例）
実施例１
第１図は、本発明の第１の実施例に係わる光ＣＶＤ装置
を模式的に示した概略構成図である。(Example) Example 1 FIG. 1 is a schematic configuration diagram schematically showing an optical CVD apparatus according to a first example of the present invention.
図中１０は八ツ容器であり、１１は光透過窓である。こ
の光透過窓１１は合成石英等からなり、中央部に凹レン
ズ、周辺部に凸レンズを有する構造となっている。真空
容器１０は、この光透過窓１１によって上下に仕切りら
れており、下側に反応室１２が形成され上側に光源室１
３が形成されている。In the figure, 10 is an eight container, and 11 is a light transmitting window. The light transmitting window 11 is made of synthetic quartz or the like, and has a structure having a concave lens in the center and a convex lens in the periphery. The vacuum container 10 is partitioned into upper and lower parts by the light transmission window 11, with a reaction chamber 12 formed on the lower side and a light source chamber 1 formed on the upper side.
3 is formed.
反応室１２内にはガラスやシリコン等からなる被処理基
板２１を載置する支持台２２が収容されており、この支
持台２２には基板２１を加熱するためのヒータ２３が設
けられている。反応室１２内には原料ガス供給系２４が
ら原料ガスとして例えばシラン、ジボラン、ホスフィン
あるいはアセチレン等が供給され、反応室１２内のガス
はガス排気系２５により排気される。A support table 22 on which a substrate to be processed 21 made of glass, silicon, etc. is placed is housed in the reaction chamber 12, and a heater 23 for heating the substrate 21 is provided on the support table 22. A raw material gas such as silane, diborane, phosphine, or acetylene is supplied into the reaction chamber 12 by a raw material gas supply system 24, and the gas in the reaction chamber 12 is exhausted by a gas exhaust system 25.
一方、光源室１３の上部には紫外線を発する低気圧水銀
ランプ等の光源３１が収容されており、この光源３１の
上方には反射板３２が配置されている。そして、光源３
１から放射された光は直接光透過窓１１を通過するか又
は反射板３２で反射されて光透過窓１１を通過して前記
反応室１２内の被処理基板２１上に照射されるようにな
っている。また、光源室１３内はＮ２ガスにてパージで
きるようになっている。On the other hand, a light source 31 such as a low-pressure mercury lamp that emits ultraviolet light is housed in the upper part of the light source chamber 13, and a reflecting plate 32 is disposed above the light source 31. And light source 3
The light emitted from 1 directly passes through the light transmission window 11 or is reflected by the reflection plate 32 and passes through the light transmission window 11 to be irradiated onto the substrate to be processed 21 in the reaction chamber 12. ing. Further, the inside of the light source chamber 13 can be purged with N2 gas.
第２図は、本実施例における光透過窓１１の動作を説明
する概略構成図である。本実施例の光透過窓１１は前述
のように複数のレンズ部を有する。FIG. 2 is a schematic configuration diagram illustrating the operation of the light transmission window 11 in this embodiment. The light transmitting window 11 of this embodiment has a plurality of lens parts as described above.
即ち、光強度の弱い周辺部分は凸レンズとなっており、
照射光を集光させる。光強度の強い中央部分は凹レンズ
となっており、照射光を分散させる。In other words, the peripheral area where the light intensity is weak is a convex lens,
Focuses the irradiated light. The central part, where the light intensity is strong, is a concave lens that disperses the irradiated light.
これにより被処理基板２１面上に照射される単位面積、
単位時間当たりの光エネルギー（放射拡散度）を均一に
する。As a result, the unit area irradiated onto the surface of the substrate 21 to be processed,
Uniform light energy (radiant diffusivity) per unit time.
この実施例により、被処理基板２１面上に形成される薄
膜の膜厚分布を均一にすることが可能となった。This embodiment makes it possible to make the thickness distribution of the thin film formed on the surface of the substrate 21 to be processed uniform.
実施例２
第３図は、第２の実施例を示す光ＣＶＤ装置の光透過窓
１１の概略構成図である。なお第１図と同一機能部分に
は同一符号を付し、詳しい説明は省略する。Embodiment 2 FIG. 3 is a schematic diagram of a light transmission window 11 of a photo-CVD apparatus showing a second embodiment. Note that the same functional parts as in FIG. 1 are denoted by the same reference numerals, and detailed explanations will be omitted.
この実施例が先に説明した第１の実施例と異なる点は、
光透過窓１１に複数のレンズ部を設ける代わりに光透過
窓１１に、照射される光の強度分布に応じた光透過早分
布を持たせたことである。This embodiment differs from the first embodiment described above as follows:
Instead of providing the light transmission window 11 with a plurality of lens parts, the light transmission window 11 is provided with a light transmission rate distribution corresponding to the intensity distribution of the irradiated light.
即ち、強度分布をもつ光が光透過窓１１に照射されるに
際し、強度の強い部分の光が通過する箇所では光透過率
を低くして光透過窓１１を通過する光エネルギーを減少
させる。また強度の弱い部分の光が通過する箇所では光
透過率を低下させず光透過窓１１を通過する光エネルギ
ーを減少させないようにする。これによって被処理基板
２１面上に照射される光の強度分布を均一にする。That is, when light having an intensity distribution is irradiated onto the light transmitting window 11, the light transmittance is lowered at a portion where the light having a strong intensity passes through, thereby reducing the light energy passing through the light transmitting window 11. In addition, the light transmittance is not lowered in the portion where the light of weak intensity passes, and the light energy passing through the light transmitting window 11 is not reduced. This makes the intensity distribution of the light irradiated onto the surface of the substrate 21 to be processed uniform.
この実施例によっても、第１実施例同様に被処理基板２
１面上に形成される薄膜の膜厚分布を均一にすことがで
きる。In this embodiment as well, the substrate to be processed 2 is
The thickness distribution of the thin film formed on one surface can be made uniform.
実施例３
第４図は、第３の実施例を示す光ＣＶＤ装置の概略構成
図である。なお第１図と同一機能部分には同一符号を付
し、詳しい説明は省略する。Embodiment 3 FIG. 4 is a schematic configuration diagram of a photo-CVD apparatus showing a third embodiment. Note that the same functional parts as in FIG. 1 are denoted by the same reference numerals, and detailed explanations will be omitted.
この実施例が先に説明した実施例１．２と異なる点を以
下に述べる。The differences between this embodiment and the previously described embodiment 1.2 will be described below.
実施例１，２では、光透過窓１１に光学的特性分布をも
たせることにより被処理基板２１に照射さる光の強度を
均一にしたが、この実施例では、フィルタ５０（平面図
を第５図に示す）を光源室１３内または反応室１２内に
光源３１と被処理基板２１との間に位置するように配置
する。フィルタ５０には実施例１，２における光透過窓
１１と同様の働きをさせる。その為に、フィルタ５０に
は、照射される光の強度分布に応じて異なる大きさの開
口部を分散配置しである。このようなフィルタ５０を設
ければ実施例１，２と同様の理由により被処理処理基板
１１に照射される光の強度が均一になるので、膜厚の均
一な薄膜を得ることが可能である。In Examples 1 and 2, the intensity of the light irradiated onto the substrate 21 to be processed was made uniform by giving the light transmission window 11 an optical characteristic distribution, but in this example, the filter 50 (the top view is shown in FIG. ) is placed in the light source chamber 13 or the reaction chamber 12 so as to be located between the light source 31 and the substrate 21 to be processed. The filter 50 has the same function as the light transmission window 11 in the first and second embodiments. For this purpose, the filter 50 is provided with apertures of different sizes distributed in accordance with the intensity distribution of the irradiated light. If such a filter 50 is provided, the intensity of light irradiated onto the substrate 11 to be processed becomes uniform for the same reason as in Examples 1 and 2, so it is possible to obtain a thin film with a uniform thickness. .
なお、本発明は、上記実施例に限定されるものではない
。例えば、第３実施例のフィルタ５０として、第２実施
例の光透過窓のように光透過早分布を持たせたものを用
いてもよい。同様に第１の実施例で説明した光透過窓の
レンズ部を光透過窓とは別に設けてもよい。Note that the present invention is not limited to the above embodiments. For example, as the filter 50 of the third embodiment, a filter having a light transmission rate distribution like the light transmission window of the second embodiment may be used. Similarly, the lens portion of the light transmission window described in the first embodiment may be provided separately from the light transmission window.
以上述べたように本発明によれば、装置を大型化するこ
となく、基板に照射される光強度分布を均一化して、基
板表面上に−様な厚さでもって薄膜を形成できる。その
結果従来より特性が良い、欠陥の少ない薄膜を得ること
ができ、後のデバイス形成工程で形成されるデバイスの
品質を大幅に向上させることができる。As described above, according to the present invention, the light intensity distribution applied to the substrate can be made uniform, and a thin film can be formed with a uniform thickness on the substrate surface without increasing the size of the apparatus. As a result, it is possible to obtain a thin film with better properties and fewer defects than before, and it is possible to significantly improve the quality of devices formed in subsequent device forming steps.
第１図は、本発明の第１の実施例に係わる光ＣＶＤ装置
を模式的に示した概略構成図。
第２図は、第１の実施例に係わる光透過窓１１の動作を
説明する概略構成図。
第３図は、第２の実施例に係わる光透過窓１１の概略構
成図。
第４図は、第３の実施例を示す光ＣＶＤ装置の概略構成
図、
第５図は、第３の実施例に用いるフィルタを示す図。
第６図は、従来の光ＣＶＤ装置を模式的に示した概略構
成図である。
１０・・・真空容器、１１・・・光透過窓、１２・・・
反応室。
１３・・・光源室、１４・・・０リング、２１・・・被
処理基板、２２・・・支持台、２３・・・ヒータ、２４
・・・原料ガス供給系、２５・・・ガス排気系、３１・
・・光源、３２・・・反射板、５０・・・フィルタ。FIG. 1 is a schematic configuration diagram schematically showing an optical CVD apparatus according to a first embodiment of the present invention. FIG. 2 is a schematic configuration diagram illustrating the operation of the light transmission window 11 according to the first embodiment. FIG. 3 is a schematic configuration diagram of the light transmission window 11 according to the second embodiment. FIG. 4 is a schematic configuration diagram of an optical CVD apparatus showing a third embodiment, and FIG. 5 is a diagram showing a filter used in the third embodiment. FIG. 6 is a schematic configuration diagram schematically showing a conventional optical CVD apparatus. 10... Vacuum container, 11... Light transmission window, 12...
reaction chamber. 13... Light source chamber, 14... 0 ring, 21... Substrate to be processed, 22... Support stand, 23... Heater, 24
... Raw material gas supply system, 25... Gas exhaust system, 31.
...Light source, 32...Reflector, 50...Filter.
Claims (1)
供給される反応室と、この反応室に光を入射するための
光源と、この光源からの光を前記基板上へ導入するため
に前記反応室に設けられた光透過窓とを有する光ＣＶＤ
装置において、前記光源から前記光透過窓を通過して前
記反応室に収容されている基板面に照射される光の強度
分布を均一化する手段を有することを特徴とする光ＣＶ
Ｄ装置。a reaction chamber that accommodates a substrate to be processed and is supplied with raw material gas used for thin film formation; a light source for inputting light into the reaction chamber; and a reaction chamber for introducing light from the light source onto the substrate. Optical CVD with a light-transmitting window provided in a reaction chamber
In the apparatus, the optical CV is characterized by having means for uniformizing the intensity distribution of light that passes through the light transmission window from the light source and is irradiated onto the surface of the substrate accommodated in the reaction chamber.
D device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25492989A JPH03120370A (en) | 1989-09-29 | 1989-09-29 | Photo-cvd device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25492989A JPH03120370A (en) | 1989-09-29 | 1989-09-29 | Photo-cvd device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03120370A true JPH03120370A (en) | 1991-05-22 |
Family
ID=17271822
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25492989A Pending JPH03120370A (en) | 1989-09-29 | 1989-09-29 | Photo-cvd device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03120370A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012012628A (en) * | 2010-06-29 | 2012-01-19 | Hitachi High-Technologies Corp | Substrate treatment apparatus |
-
1989
- 1989-09-29 JP JP25492989A patent/JPH03120370A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012012628A (en) * | 2010-06-29 | 2012-01-19 | Hitachi High-Technologies Corp | Substrate treatment apparatus |
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