JPH0311088B2 - - Google Patents

Info

Publication number
JPH0311088B2
JPH0311088B2 JP292885A JP292885A JPH0311088B2 JP H0311088 B2 JPH0311088 B2 JP H0311088B2 JP 292885 A JP292885 A JP 292885A JP 292885 A JP292885 A JP 292885A JP H0311088 B2 JPH0311088 B2 JP H0311088B2
Authority
JP
Japan
Prior art keywords
reaction tube
heating furnace
semiconductor manufacturing
holding
holding device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP292885A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61161712A (ja
Inventor
Isao Hishikari
Yasushi Sakaino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chino Corp
Original Assignee
Chino Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chino Corp filed Critical Chino Corp
Priority to JP292885A priority Critical patent/JPS61161712A/ja
Publication of JPS61161712A publication Critical patent/JPS61161712A/ja
Publication of JPH0311088B2 publication Critical patent/JPH0311088B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP292885A 1985-01-11 1985-01-11 半導体製造装置 Granted JPS61161712A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP292885A JPS61161712A (ja) 1985-01-11 1985-01-11 半導体製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP292885A JPS61161712A (ja) 1985-01-11 1985-01-11 半導体製造装置

Publications (2)

Publication Number Publication Date
JPS61161712A JPS61161712A (ja) 1986-07-22
JPH0311088B2 true JPH0311088B2 (cs) 1991-02-15

Family

ID=11543000

Family Applications (1)

Application Number Title Priority Date Filing Date
JP292885A Granted JPS61161712A (ja) 1985-01-11 1985-01-11 半導体製造装置

Country Status (1)

Country Link
JP (1) JPS61161712A (cs)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960001161B1 (ko) * 1987-09-29 1996-01-19 도오교오 에레구토론 사가미 가부시끼가이샤 열처리장치

Also Published As

Publication number Publication date
JPS61161712A (ja) 1986-07-22

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