JPH03109290A - Crystal growth device - Google Patents

Abstract

PURPOSE:To grow crystals without unequalness by adopting the constitution consisting in providing partition plates in a baffle, partitioning the baffle to the chambers communicating with plural vessels and providing holes in the respective chambers. CONSTITUTION:The material 2 in the vessel 1a is heated by a heater 4 and is evaporated shown in Fig. I. The vapor is released laterally from the hole 14 via the chamber 12 in the baffle 10 and is brought into collision against the inside wall 1' of a crucible 1 by which the vapor is scattered. On the other hand, the material 3 in the vessel 16 is heated and evaporated by a heater 5. The vapor is released laterally from the hole 15 via the chamber 13 in the baffle 10 and is brought into collision against the inside wall 1' of a crucible 1 by which the vapor is scattered. The evaporated materials 2, 3 are adequately mixed while being scattered by the inside wall 1'. The mixture is supplied to a substrate 7 and is deposited by evaporation thereof without the unequalness in the film thickness, by which the crystal having the uniform compsn. is grown. The materials housed in the vessels 20a to 20c are heated and evaporated by heaters 24 to 26 and are released from the holes 33 to 35 of the respective chambers like shown by Fig. II in the case of 3 kinds of the materials. The vapors thereof are brought into collision against the inside wall 20' of the crucible 20 and are thereby scattered without being brought into reaction in the baffle 27.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a hot wall apparatus that heats a crucible containing a material to evaporate the material and deposits it onto a substrate to perform crystal growth.

Since the device with the above configuration uses material evaporation, it tends to cause uneven crystal growth on the substrate, but in order to obtain good characteristics as a semiconductor device, it is necessary to grow crystals with a uniform composition. be.

[Conventional technology]

FIG. 3 shows a configuration diagram of a conventional example. In the figure, crucible 1 is divided into containers 1a and 1b, and in particular, container 1
b extends 6 through the container 1a and upwards. container 1
For example, a material such as zinc (Zn) 2. Each container 1b contains a material 3 such as selenium (Se 2 ). The material 2 is heated by a heater 4 provided around the outer periphery of the container 1a. The materials 3 are heated and evaporated by heaters 5 provided around the outer periphery of the container 1b, mixed in the crucible 1, and deposited on the substrate 7 which is heated by the heater 6.

On the other hand, FIG. 4 shows a configuration diagram of another conventional example, in which
Components that are the same as those in FIG. 3 are given the same numbers. In Figure 4,
8 is a baffle, which is bowl-shaped and contains containers 1a, 1t)
It is placed upside down above the The baffle 8 is provided with holes 9 at several locations on its body. heater 4,
The material 2.3 heated and evaporated in step 5 passes through the baffle 8 and is ejected laterally from the hole 9 to the inner wall 1' of the crucible 1.
The particles collide with and are scattered, and in this scattered state reach the substrate 7 and are deposited thereon.

(Problem to be Solved by the Invention) In the conventional example shown in FIG.
In many cases, the particles are not scattered very well within the interior and directly reach the substrate 7 as they are. For this reason, for example, in the central part of the substrate 7, the component of material 3 is large, while in the peripheral part of the substrate 7, the component of material 2 is large, causing unevenness in the crystal growth film thickness and making it difficult to obtain a film with a uniform composition. There was a problem that it could not be done.

On the other hand, in the conventional example shown in FIG.
is provided, the evaporated material 2.3 is ejected laterally from the hole 9 of the baffle 8, collides with the inner wall 1' of the crucible 1, and is scattered, which causes the material 2.3 to loosen ( However, in the conventional example shown in FIG. 4, since the baffle 8 is provided, the material 2.3 is Reaction occurs within the baffle 8, and as a result, less material reaches the substrate 7, resulting in not only a low growth rate and inefficiency, but also a waste of material 2.3, resulting in high costs. There was a problem.

SUMMARY OF THE INVENTION An object of the present invention is to provide a crystal growth apparatus that can grow a crystal evenly while increasing the growth rate.

[Means to solve the problem]

According to the present invention, a partition plate is provided within the baffle, the interior of the baffle is partitioned by the partition plate into chambers communicating with each of a plurality of containers constituting a crucible, and a hole is provided in each of the chambers.

(Function) Each material contained in each container is heated and evaporated, emitted from the hole in the baffle, collides with the inner wall of the crucible and is scattered, and is mixed well and aS is applied to the substrate, resulting in even crystallization. Growth takes place. In the present invention, in particular, since a partition plate is provided within the baffle, each material evaporated from each container does not react within the baffle, but instead collides with the inner wall of the crucible independently and is scattered. Since no reaction occurs within the baffle, each material can be sufficiently supplied to the substrate, allowing a high growth rate and being economical.

(Embodiment) FIG. 1 shows a configuration diagram of a first embodiment of the present invention, and in the figure,
Components that are the same as those in FIGS. 3 and 4 are given the same numbers and their explanations will be omitted. In FIG. 1, reference numeral 10 denotes a baffle with a partition plate, which is bowl-shaped and is placed upside down above the containers 1a and 1b. A partition plate 11 is integrally provided inside the baffle 10 along its inner periphery.
The interior of the baffle 10 is partitioned by a partition plate 11 into a chamber 12 communicating with the container 1a and a chamber 13 communicating with the container 1b. Further, holes 14° are provided at several locations in the body of the chamber 12, and holes 15 are provided at several locations in the 11th section of the chamber 13.

The material 2 (Zn) in the volume B1a is heated by the heater 4 and evaporated, and is laterally ejected from the hole 14 through the chamber 12 in the baffle 10, collides with the inner wall 1' of the crucible 1, and is scattered. On the other hand, the material 3 (Se) in the container 1b is heated by the heater 5 and evaporated, and is laterally discharged from the hole 15 through the chamber 13 in the baffle 10, and is ejected from the inner wall 1' of the crucible 1.
collides with and is scattered. Material evaporated in this way 2
, 3 are scattered and mixed properly on the inner wall 1' of the crucible 1, and reach the substrate 7, where they are deposited with an even thickness and crystal growth of a uniform composition is performed.

In this case, in the present invention, since the partition plate 11 is provided within the baffle 10, the evaporated materials 2 and 3 are transferred to the baffle 10.
The inner wall 1 of the crucible 1 independently reacts inside the crucible 1.
′ and will be scattered. Since no reaction occurs within the baffle 10 in this way, a sufficient amount of material can be supplied to the substrate 7 and the growth rate can be increased compared to the conventional example shown in FIG. 4 in which no partition plate is provided within the baffle. be able to. Therefore, it is efficient, the material 2.3 is not wasted, and the cost is low.

FIG. 2 shows a configuration diagram of a second embodiment of the present invention.

In the figure, 20 is a crucible, and containers 20a and 20b.

In particular, the container 20b extends upward through the container 20a, and the container 20C is divided into 20G. 20
It passes through b and extends upward. Containers 20a, 20
Materials 21, 22, and 23 are stored in containers 20a, 20b, and 20c, respectively, and these are heated by heaters 24, 25, and 26 provided around the outer peripheries of the containers 20a, 20b, and 20c.

Reference numeral 27 denotes a baffle with a partition plate, which is bowl-shaped and is placed upside down above the containers 20a, 20b, and 20c. Inside the baffle 27, there is a partition plate 28 at the bottom along its inner circumference. Partition plates 29 are integrally provided at the top, and the inside of the baffle 27 is partitioned by the partition plates 28 and 29 into ff1l130 communicating with the container 20a, a chamber 31 communicating with the container 20b, and a chamber 32 communicating with the container 20C. .

Also, holes 339 are provided at several locations on the body of the chamber 30, holes 342 are provided at several locations on the body of the chamber 31, and holes 35 are provided at several locations on the body of the chamber 32, respectively.

This is applicable to three types of materials, and the first
Similar to the embodiment, material 21 is released from the hole 33, material 22 is released from the hole 34, material 23 is released from the hole 35, and the three materials are prevented from reacting in the baffle 27, respectively, in the crucible 20. The particles are scattered by colliding with the inner wall 20'. Other functions and effects are similar to those of the first embodiment, so their explanation will be omitted.

In addition, in each example, two holes were provided in the baffle at opposing locations, but the invention is not limited to this, and
Its position is also not limited to the example.

(Effects of the Invention) As explained above, according to the present invention, since the baffle is provided with a partition plate, the evaporated materials do not react within the baffle, and therefore the conventional example in which a reaction occurs within the baffle In comparison, each material can be sufficiently supplied to the substrate, the growth rate can be increased, it is efficient, and it is economical because materials are not used unnecessarily.

[Brief explanation of drawings]

1 and 2 are configuration diagrams of the first and second embodiments of the present invention, respectively, and FIGS. 3 and 4 are configuration diagrams of each side of the conventional system. In the figure, 1.20 is a crucible, 1', 20' are inner walls, 2.3.21 to 23 are materials, 7 is a substrate, 10.27 is a baffle with a partition plate, 11.28.29 is a partition plate, 12 .13.30-32 are rooms, 14.15.33-35 are holes. Second laugh of the present invention 7! Diagram 2 of Ij's structure

Claims (1)

[Claims] The materials (2, 3) respectively accommodated in the plurality of containers (1a, 1b) provided in the crucible (1) are evaporated, and the materials (2, 3) are evaporated into the baffle (1a, 1b) provided above each container (1a, 1b). 1
0) through the holes (14, 15) of the crucible (1).
) in a crystal growth apparatus having a structure in which the crystals are scattered by colliding with the inner wall (1') of the baffle (10) and grown on the substrate (7) disposed above, a partition plate (11) is provided in the baffle (10), Inside the baffle (10), a room (1) is connected to each of the plurality of containers (1a, 1b) by the partition plate (11)
1. A crystal growth apparatus characterized in that the crystal growth apparatus is partitioned into two chambers (12, 13), and each of the chambers (12, 13) is provided with the holes (14, 15).