JPH03104863A - Electron beam evaporating source - Google Patents

Abstract

PURPOSE:To efficiently replenish a material for vapor deposition and to allow the adjustment in the height of the surface layer part of the material for vapor deposition by constituting the bottom of a part for housing the material for vapor deposition of a lifting base and providing a means for adjusting the lifting quantity thereof. CONSTITUTION:An electron beam evaporating source 10 is constituted of the cylindrical housing part 11 of the material for vapor deposition and a cylindrical part 12 for holding this part. The disk-shaped lifting base 22 is provided along the inner peripheral wall surface of the part 11 for housing the material for vapor deposition and a supporting shaft 23 is provided in the central part of the bottom of the lifting base 22. An annular magnet 24 is provided on the outer periphery of the cylindrical part 12 and an operating pin 25 is coupled thereto. A guide rail 26 is provided in the interme diate part of the operating pin 25 and an operating knob 27 is provided in the front end part of the operating pin 25. The operating knob 27 is raised to move the material 28 for vapor deposition upward when the material 28 is decreased by the repetition of the vapor deposition operation. The material 28 for vapor deposition is brought to the finest position where the material is irradiated with the electron bean E in this way.

Description

DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to an electron beam evaporation source used for vacuum evaporation.

(Prior Art) Generally, when a deposited film of high purity is required, an electron beam evaporation source that is often used is constructed as shown in FIG. 4. The electron beam evaporation source 1 is comprised of a magnetic pole 2 at the top and a base 3 at the bottom through which cooling water is circulated, and a crucible 4 is provided above the base 3. Further, a filament 5 is provided on the side surface of the base 3,
A power supply device 6 is provided to cause current to flow through the filament 5. A tantalum plate 7 is placed on the crucible 4 provided on the top of the base 3. This tantalum plate 7
A evaporation material 8 is placed in the evaporation material 8, and by irradiating the evaporation material 8 with the electron beam E from the filament 5, a part of the evaporation material 8 is evaporated in a vacuum.

When the electron beam evaporation source 1 configured in this way repeats the evaporation operation continuously, the amount of the evaporation material 8 placed in the tantalum dish 7 decreases, and stable evaporation gradually becomes impossible. Ta. Since the evaporation work is performed in a vacuum container (not shown), the evaporation chamber is opened to the atmosphere, the evaporation material 8 is replenished, the vacuum state is again established, and the baking work is performed in this state to stabilize the operation of the electron beam evaporation IW1. The workability was poor because the vapor deposition work had to be restarted after the process had been completed.

For this reason, the workability of replenishing the vapor deposition material 8 has had a large effect on the efficiency of the vapor deposition work.

In addition, although the vapor deposition material 8 gradually decreases during the vapor deposition process,
Since the height of the surface layer of the vapor deposition material 8 that is irradiated with the electron beam E cannot be adjusted, the time for stable vapor deposition is short.
There is a problem in that in order to form a deposited film of high quality, a great deal of time and effort is required to adjust the apparatus.

(Problem to be solved by the invention + Ta. Since the position of the surface layer of the vapor deposition material that is irradiated with the electron beam cannot be adjusted, stable vapor deposition cannot be performed continuously.

The present invention has been made in view of the above-mentioned problems, and provides an electron beam evaporation source that can efficiently replenish vapor deposition material and that can adjust the height of the surface layer of the vapor deposition material that is irradiated with the electron beam. The purpose is to provide

[Configuration of the Invention (Means for Solving the Problems) (1) A vapor deposition chamber maintained in a vacuum state is provided, a vapor deposition material storage section is opened in this vapor deposition chamber, and a vapor deposition material accommodated in the vapor deposition material storage section is provided. An elevating platform is provided with an electron beam gun that irradiates the material with an electron beam, and the bottom of the vapor deposition material storage section is configured with an elevating platform that moves forward and backward toward the opening. An electron beam evaporation source provided with an adjustment mechanism and adjustment means for adjusting the elevation adjustment mechanism.

(2) An electron beam gun that provides an evaporation chamber maintained in a vacuum state, opens a evaporation material storage section in the evaporation chamber, and illuminates the evaporation material accommodated in the evaporation material storage section with an electron beam. A vapor deposition material container is inserted into the vapor deposition material container so as to be able to move forward and backward toward the opening and can be freely removed, and an elevating platform is provided to hold the bottom of the vapor deposition material container so that it can be raised and lowered to maintain a vacuum state. An electron beam evaporation source comprising: an elevating adjustment mechanism for holding the elevating table and transmitting an elevating movement; and an adjusting means for adjusting the elevating adjusting mechanism.

(Function) <1) By adjusting the elevation adjustment mechanism using the adjustment means, the elevation platform is raised toward the opening on the side of the deposition chamber,
Vapor deposition can be performed continuously, and the surface layer portion of the vapor deposition material can be positioned at the best position for irradiation of the electron beam from the electron beam gun.

(2) By adjusting the elevation adjustment mechanism using the adjustment means, the elevation platform is raised toward the opening on the deposition chamber side,
By raising the vapor deposition material container, the surface layer of the vapor deposition material can be maintained in the best position relative to the electron beam. Furthermore, since the vapor deposition material container is volatilizable, replenishment and replacement of the vapor deposition material and cleaning of the apparatus are extremely easy.

(Example) Please refer to Figure 1 for the first embodiment of the present invention! I will explain using 1G.

The electron beam evaporation source 10 shown in the figure is an evaporation material storage section 1.
1, and a cylindrical part 12 which is integrally formed with the F part of this vapor deposition material storage part 11 and whose lower end is closed. Here, the evaporation storage section 11 and the cylindrical section 12 formed integrally therewith so as to maintain a sealed state are made of a nonmagnetic material such as a nonmagnetic metal.

This vapor deposition material storage section 11 is formed into a substantially cylindrical shape, and a flange section 13 is formed in a part of the outer wall.

The electron beam evaporation source 10 is evaporated through the bottom wall of the evaporation chamber 15 of the evaporation apparatus 14, and the flange 13 is joined to the inner wall of the evaporation chamber 15. They are connected by screw a.

Opening 1 of evaporation material storage section 11 of this electron beam evaporation source 10
7 opens to the vapor deposition chamber side. Further, an electron beam gun 18 is provided on the outer periphery of the vapor deposition material accommodating portion 11 opposite to the position where the flange portion 13 is provided. This electron beam gun 18 is provided with a magnet 18a, so that the irradiation position of the electron beam 18 can be changed.

Further, a deposition chamber 1 is provided at the deposition part of the electron beam evaporation source 10.
An annular seal plate 20 is provided which is joined to the outer wall surface of 5 and connected with screws a, and this seal plate 20
A sealing material 21 is sandwiched between the inner peripheral edge of the evaporation chamber 15 and the outer wall surface of the vapor deposition chamber 15 to seal the insertion portion of the electron beam evaporation source 10.

On the other hand, the evaporation material storage section 1 of the electron beam evaporation source 10
1 has a cylindrical inner circumferential wall surface following the opening 17, and a disk-shaped lifting platform 22 formed along this inner circumferential wall surface is provided to be slidable in the vertical direction.

A support shaft 23 that is inserted concentrically into the cylindrical portion 12 is provided at the center of the bottom of the lifting platform 22 . The support shaft 23 is made of a magnetic material such as a magnetic metal.

An annular magnet 24 is provided on the outer periphery of the cylindrical portion 12. An operating pin 25 that projects in the radial direction is coupled to this annular magnet 24.

A guide rail 26 is provided along the cylindrical portion 12 in the middle of the operation bin 25.
6 is adapted to slidably guide the operation bin 25 with a resistance force that holds it. An operating knob 27 is provided at the tip of the operating pin 25. By operating this operating knob 27, the annular magnet 24 can be moved in the direction of arrow A. As the annular magnet 24 moves, the support member 23 within the cylindrical portion 12 moves, and the elevating table 22 moves in the direction of arrow A. Here, the elevating table 22, the support shaft 23, and the annular magnet 24 form an elevating adjustment mechanism. In addition, the operation bin 25, the guide rail 26, and the operation knob 2
7 forms an adjusting means.

The vapor deposition material 28 is accommodated in the vapor deposition material storage section 11 of the electron beam evaporation source 10 configured in this manner.

That is, the lifting platform 22 is held at the lowest position by the annular magnet 24, and the vapor deposition material 28 is accommodated in this state. Then, the electron beam gun 18 irradiates the vapor deposition material 28 with the electron beam E. This electron beam E is configured to be oscillated over almost the entire upper part of the vapor deposition material 28 by a magnet 18a, and the vapor deposition material 28 exposed from the opening 17 is evaporated almost uniformly.

Then, as the vapor deposition operation is continuously repeated, the vapor deposition material 28 gradually decreases. This vapor deposition material 28 is checked through an observation window (not shown), and if the amount has decreased, the operation knob 27 is raised by the necessary amount to move the vapor deposition material 28 upward. This allows the vapor deposition material 28 to be positioned at the best position to be irradiated with the electron beam E. Since this vapor deposition material 28 can be moved within the range of dimension B in the figure, compared to the conventional structure, the frequency of replenishment of the vapor deposition material 28 is reduced, and continuous, stable, and high-quality vapor deposition work can be performed efficiently. I can do it.

A second embodiment of the present invention will be described below with reference to FIGS. 2 and 3. The electron beam generation source 30 shown in the figure includes a vapor deposition housing section 31 and a cylindrical section 32 that is integrally formed under the vapor deposition housing section 31 and whose lower end is closed.

Here, the cylindrical portion 32 is made of a non-magnetic material.

This electron beam generation source 30 is a vapor deposition chamber 34 of a vapor deposition apparatus 33.
It is provided so as to penetrate through the bottom wall of the. A flange portion 36 is integrally provided on the outer peripheral portion of the vapor deposition storage portion 31, and this flange portion 36 is joined to the bottom inner wall surface of the vapor deposition chamber 34 by screws a. Further, the bottom wall surface of the vapor deposition chamber 34 through which the vapor deposition storage section 31 is penetrated is formed with high precision, and an annular sealing material 37 is inserted along the outer circumference of the vapor deposition storage section 31 on the outer side. An annular seal plate 38 is further joined from the outside and connected to the outer wall surface of the vapor deposition chamber 34 by screws a. As a result, the sealing material 37 is sandwiched between the vapor deposition housing portion 31 and the edge of the vapor deposition chamber 34 and sealed.

Further, the inner circumferential surface of the vapor deposition storage section 31 that is continuous with the opening 35 facing the vapor deposition chamber 34 is formed in a cylindrical shape, and a disk-shaped lifting platform 39 that moves up and down along the axis of this cylinder is formed. has been done. A support shaft 40 is integrally provided at the center of the lower surface of the lifting table 39. The support shaft 40 is movably inserted in the cylindrical portion 32 concentrically and in the axial direction. This support shaft 40
is made of magnetic material. A concentric annular magnet 41 is mounted around the cylindrical portion 32 and is movable in the axial direction. This annular magnet 41 is provided with an operating pin 42 that is coupled from the radial direction, and a guide rail 43 that is provided almost parallel to the axis of the cylindrical portion 32 is provided in the middle of this operating pin 42. There is. This guide rail 43 has a resistance force that holds the annular magnet 41 and guides the operating pin 42 in a blindly movable manner. An operation knob 44 is provided at the tip of the operation bin 42, and by operating this operation knob 44 in the direction of arrow A, the annular magnet 41 is raised and lowered, thereby raising and lowering the three lifting platforms. It has become.

Here, the elevator table 39, the support shaft 40, and the annular magnet 41 constitute an elevator adjuster groove. In addition, operation pin 4
2. The guide rail 43 and the operating knob 44 constitute an adjusting means.

Furthermore, a vapor deposition material container 45 is accommodated inside the opening 35 of the vapor deposition storage section 31 . This vapor deposition material container 45
has a shape that follows the inner wall surface of the vapor deposition material storage section 31, and its bottom is supported by the lifting table 39. A vapor deposition material 46 is accommodated in this vapor deposition material container 45 .

An electron beam gun 47 is provided on the side of the vapor deposition storage section 31 located inside the vapor deposition chamber 34, and a magnet 47a is provided near the electron beam gun 47.
The target position of the vapor deposition material 46 is continuously changed so that the surface layer of the vapor deposition material 46 is irradiated almost uniformly.

When the evaporation work is continuously performed using the electron beam evaporation source 30 arranged in this way, the evaporation material 46 accommodated in the evaporation material container 45 gradually decreases. When it is confirmed from the observation window (not shown) that the vapor deposition material 46 has decreased in this way, the operation knob 44 can be raised to adjust the surface layer position of the vapor deposition material 46 to the normal position as shown in FIG. can.

As a result, without the need to replenish new vapor deposition material 46,
High quality and stable vapor deposition work can be continued.

As a result, workability can be improved by reducing the frequency of replenishment work, and high-quality vapor deposition can be stably performed.

Further, since the vapor deposition material container 45 is removably inserted into the vapor deposition material container 31, even if the vapor deposition material 46 melts during vapor deposition, flows to the lower layer, and solidifies, the vapor deposition material container 45 Solidifies within 4 hours. As a result, by replacing the steaming material container 4≧, the steaming material 46
Replacement and replenishment work becomes extremely easy. Also,
Cleaning of the device also becomes easier.

Note that the present invention is not limited to the above embodiments. For example, one step of the elevation adjustment mechanism is to operate the imitation knob 27.44, but is not limited to this, and the vapor deposition material 28
．． 46 is automatically detected, and the annular magnet 24 is automatically detected accordingly.
．． It is also conceivable to provide an automatic adjustment device for driving the elevation adjustment mechanism such as 41.

[Effects of the invention] (1) By configuring the bottom of the vapor deposition material storage section with a lifting platform that can be raised and lowered, the vapor deposition material is raised as the amount of vapor deposition decreases, and the surface layer level of the wide deposit material is irradiated with the Nanako beam. Can be maintained at an appropriate level.

As a result, the capacity for storing vapor deposition material can be increased compared to the conventional {114 structure, and the frequency of replenishment of vapor deposition material can be particularly reduced when continuous vapor deposition is performed, and the reduction in vapor deposition material can be immediately dealt with. As a result, it is possible to realize a vapor deposition operation that can always consistently obtain a high-quality vapor deposited film.

(2) The bottom of the evaporation material storage section is formed with a lifting platform that can be raised and lowered, and the evaporation material container is removably inserted into the upper part of the elevator, so that the evaporation material can be stored when replenishing or replacing the evaporation material. Replenishment and replacement work is extremely easy by replacing the entire container.

In addition, by raising the above-mentioned lifting platform, the surface layer level of the evaporation material can be easily raised when the amount of evaporation material decreases, which is extremely effective for continuous evaporation work and ensures continuous and stable high-quality evaporation films. You can get it. In addition, since the entire vapor deposition material container can be replaced, cleaning work can be simplified and overall work efficiency can be improved.

[Brief explanation of drawings]

FIG. 1 is a front cross-sectional view showing an electron beam evaporation source according to a first embodiment of the present invention, FIGS. 2 and 3 are a second embodiment of the present invention, and FIG. 2 shows an electron beam evaporation source. Front sectional view,
FIG. 3 is a front sectional view showing the electron beam evaporation source with the lifting platform elevated, and FIG. 4 is a front view of the conventional electron beam evaporation source. DESCRIPTION OF SYMBOLS 10... Electron beam evaporation source, 11... Evaporation material storage part, 22... Lifting table (lifting/lowering adjustment mechanism), 23... Support shaft (lifting/lowering joint mechanism), 24... Annular magnet (lifting/lowering adjustment mechanism) Adjuster +Ak), 25... Operation pin (213m means), 26
...Guide rail (adjustment means), 27.. Operation knob (adjustment means), 28.. Vapor deposition material, E.. Electron beam, 45.. Vapor deposition material container.

Claims (2)

[Claims] (1) An electron beam evaporation source comprising an evaporation material accommodating section opened into a evaporation chamber maintained in a vacuum state, and an electron beam gun that irradiates the evaporation material accommodated in the evaporation material accommodating section with an electron beam. The bottom of the vapor deposition material storage section is configured with an elevating table that advances and retreats toward the opening, and an elevating adjustment mechanism is provided that maintains the vacuum state of the vapor deposition chamber and transmits an elevating force to the elevating table. An electron beam evaporation source characterized by being provided with an adjustment means for adjusting the amount of vertical movement of the adjustment mechanism. (2) An electron beam evaporation source comprising an evaporation material accommodating part opened in a evaporation chamber maintained in a vacuum state and an electron beam gun that irradiates the evaporation material housed in the evaporation material accommodating part with an electron beam. In this method, a vapor deposition material container is removably inserted into the opening of the vapor deposition material container so as to move forward and backward toward the opening of the vapor deposition material container, and a lifting platform is provided to hold the bottom of the vapor deposition material container so that it can be raised and lowered to maintain a vacuum state. An electron beam evaporation source characterized in that an elevating adjustment mechanism for holding the elevating table and transmitting an elevating and lowering movement force is provided, and an adjusting means for adjusting the elevating adjustment mechanism.