JPH04304362A - Ion plating device - Google Patents

Abstract

PURPOSE:To provide the ion plating device which can surely prevent the infiltration of plasma to a base material side in the preparatory stage far film formation even if the high-density plasma is generated in a vacuum chamber. CONSTITUTION:A shutter 19 constituted of a main shutter member 22 which consists of a bottom plate 20 and a vertical type half frame body 21 integrated with this bottom plate 20 and is freely movable to an arc shape and an auxiliary shutter member 23 which is connected to this vertical type half frame body 21 to constitute a vertical type half frame body shape enclosing a holder 15 and is freely movable forward and backward is disposed within the vacuum chamber 1.

Description

[Detailed description of the invention]

0001

[Field of Industrial Application] The present invention relates to an ion plating apparatus.

0002

2. Description of the Related Art In general, film formation using an ion plating apparatus has the characteristic that it is possible to form a film with higher adhesion on the surface of a base material compared to the usual CVD method or sputtering method. When film formation using an ion plating device with such characteristics is applied to a structural material as a base material, it is possible to improve productivity and form a thick film with a smooth surface without being affected by the surface roughness of the structural material. Therefore, there is a demand for high-speed film formation.

By the way, a conventional ion plating apparatus includes a vacuum chamber, a substrate holder disposed near the upper part of the chamber, and a base material holder arranged movably in an arc below the substrate holder. a flat shutter for shielding the held base material from deposition of a vapor deposition material; a vapor deposition source disposed near the bottom of the chamber; a plasma gun provided on a side wall of the chamber; and the holder. The electrode is provided on a side wall of the chamber on the opposite side of the plasma gun, and is used to draw plasma from the plasma gun into the chamber.

In the ion plating apparatus having the above-described structure, the substrate is held in the substrate holder, the shutter is moved to be positioned below the substrate, and then the inside of the chamber is brought to a predetermined degree of vacuum. A plasma gun generates plasma, and the electrode draws the plasma into the chamber. With such plasma formed in the chamber, a desired deposition material is evaporated from the deposition source and ionized by the plasma. After the preparation for film formation is completed in which the plasma and evaporation of the vapor deposition material are stabilized, the shutter is moved to open the lower part of the base material, so that the ionized vapor deposition material collides with the surface of the base material to which a negative potential has been applied. A predetermined thin film is formed.

[0005]

[Problems to be Solved by the Invention] However, in the ion plating apparatus having the above structure, if the density of the plasma generated in the vacuum chamber is increased in order to increase the film formation rate, it is necessary to increase the density of the plasma generated in the vacuum chamber. Since the shutter is shaped like a flat plate, the plasma wraps around the base material. As a result, there was a problem in that the film quality of the thin film formed after opening the shutter was significantly deteriorated.

The present invention was made in order to solve the above-mentioned conventional problems, and even if high-density plasma is generated in a vacuum chamber, it is possible to ensure that the plasma goes around to the substrate side in the preparation stage for film formation. The purpose of the present invention is to provide an ion plating device that can prevent such problems.

[0007]

[Means for Solving the Problems] The present invention includes a vacuum chamber, a substrate holder disposed near the upper portion of the chamber, and a method for depositing a vapor deposition substance on the substrate held by the substrate holder. a shutter for shielding; a evaporation source for evaporating a deposition material disposed near the bottom of the chamber; a plasma gun disposed on a side wall of the chamber; In the ion plating apparatus equipped with a counter electrode for drawing plasma from a gun into the chamber, the shutter is composed of a bottom plate and a vertical half frame integrated with the bottom plate, and is movable, for example, in an arc shape. a main shutter member,
The ion plating apparatus is characterized in that it is comprised of an auxiliary shutter member that is connected to the vertical half-frame and surrounds the holder, and is movable forward and backward, for example, in the shape of a vertical half-frame.

[0008] As the vapor deposition source, an electron beam heating type, a resistance heating type, or the like can be used. As the crucible for storing the vapor deposition material of the vapor deposition source, a crucible having a structure having a single hole for storing the vapor deposition material, or a crucible having a structure in which the vapor deposition material is stored in multiple locations or in a ring shape can be used.

The ion plating apparatus according to the present invention preferably has the configuration described below from the viewpoint of high-speed film formation.

(1) A vacuum chamber, a substrate holder disposed near the upper part of the chamber, and the above-described structure for shielding the substrate held by the substrate holder from deposition of a vapor deposition substance. a shutter located near the bottom of the chamber, a deposition source for evaporating the deposition material with an electron gun, a plasma gun provided on the side wall of the chamber, and a plasma gun identical to the plasma gun located near the inner surface of the side wall of the chamber. Alternatively, a rectangular first plate is disposed substantially in the same plane and facing the plasma gun, and is configured to draw plasma from the plasma gun into the chamber.
a counter electrode located near the inner surface of the side wall of the chamber in the same or substantially the same plane as the plasma gun;
and rectangular second and third opposing electrodes arranged to face each other in the electron beam emission direction from the electron gun and for drawing out plasma from the plasma gun into the chamber; A permanent magnet is built into each of the third opposing electrodes so that the surfaces facing each other serve as south poles, and each of the permanent magnets is arranged near the outer surface of the side wall of the chamber where the opposing electrodes are located, and An ion plating device equipped with a coil for controlling magnetic force.

(2) A vacuum chamber, a substrate holder disposed near the upper part of the chamber, and the above-described structure for shielding the substrate held by the substrate holder from deposition of a vapor deposition substance. a shutter located near the bottom of the chamber, a deposition source for evaporating the deposition material with an electron gun, a plasma gun provided on the side wall of the chamber, and a plasma gun identical to the plasma gun located near the inner surface of the side wall of the chamber. or a rectangular first opposing electrode disposed substantially in the same plane and facing the plasma gun, and containing a permanent magnet for drawing plasma from the plasma gun into the chamber; , are arranged near the inner surface of the side wall of the chamber so as to be located in the same or almost the same plane as the plasma gun, and to face each other in the electron beam emission direction from the electron gun, and to emit plasma from the plasma gun. Rectangular second and third opposing electrodes each having a built-in permanent magnet for drawing out into the chamber; An ion plating apparatus comprising a coil that constitutes an electromagnet together with each of the opposing electrodes so that the surface of each of the opposing electrodes becomes an S pole.

0012

[Operation] According to the present invention, the shutter disposed below the substrate holder is composed of a bottom plate and a vertical half-frame body integrated with the bottom plate, and includes a main shutter member movable in, for example, an arc shape, and By comprising an auxiliary shutter member, for example, which is connected to a vertical half-frame body and surrounds the holder, and which can move forward and backward, film formation is possible even when high-density plasma is generated in the vacuum chamber. In the preparation stage, the plasma is directed around the base material side by a vertical frame formed by a combination of the bottom plate of the main shutter member, a vertical half frame of the main shutter member, and an auxiliary shutter member in the shape of a vertical half frame. This can be reliably prevented. As a result, by opening the shutter and forming a film, a thin film having good film quality can be formed on the surface of the substrate at high speed.

[0013] The inventors of the present invention have attempted to construct the shutter from a bottom plate that can move forward and backward, and a vertical frame that can move in an arc. However, in a shutter with such a structure, the bottom plate is deformed by the radiant heat from the heater attached to the holder, the molten vapor deposition material from the vapor deposition source, and the plasma, so it is necessary to provide a large distance between the bottom plate and the lower end of the vertical frame. . As a result, there was a problem in that plasma entered the base material through the gap between the bottom plate and the vertical frame. In contrast, the shutter used in the present invention has a structure in which the main shutter member is integrated with the bottom plate at the lower end of the vertical half-frame body, so the amount of deformation due to the radiant heat is reduced, and the main shutter member Even if the bottom plate is deformed, plasma can be prevented from going around to the side of the base material, as in the case of a shutter constructed of a bottom plate and a vertical frame as described above.

[0014]

Embodiments Hereinafter, embodiments of the present invention will be described in detail with reference to FIGS. 1 to 4.

FIG. 1 is a schematic cross-sectional view showing an ion plating apparatus of the present invention, FIG. 2 is a cross-sectional view taken along line II--II in FIG. 1, and FIG. 3 is a diagram for explaining plasma generation by the apparatus. Perspective view FIG. 4 is a perspective view showing a state in which the shutter is opened. 1 in the figure is a square cylindrical vacuum chamber, and the upper side wall of this chamber 1 has the chamber 1
An exhaust pipe 2 is provided which communicates with a vacuum pump for maintaining the interior at a predetermined degree of vacuum. Moreover, 3 in the figure is a vapor deposition source. The vapor deposition source 3 includes a crucible 4 installed at the bottom of the chamber 1, an electron gun 5 installed at the lower side wall of the chamber 1 for irradiating the crucible 4 with an electron beam, and an electron gun 5 located above the crucible 4. It is comprised of a pair of deflecting magnets 6 which are arranged nearby and deflect the electron beam from the electron gun 5 to irradiate the vapor deposition material in the crucible 4 .

A plasma gun 7 as a plasma generation source is provided on the outer surface of one side wall of the chamber 1, and at the rear of the plasma gun 7 is an introduction port for introducing a predetermined gas such as argon (Ar). A tube (not shown) is provided. An aperture coil 8 is provided on the outer surface of the side wall of the chamber 1 in which the plasma gun 7 is provided, and a plasma aperture section 9 is provided on the same side wall. Three support shafts 101 , 102 , 103 are provided on the other three side walls of the chamber 1 except for one side wall where the plasma gun 7 is provided.
is inserted through the plasma gun 7 so as to be located in the same plane as the plasma gun 7. Each of the support shafts 101 and 102
, 103 located in the chamber 1 includes:
First to third counter electrodes 111, 112 having a rectangular shape
, 113 are each fixed. The first counter electrode 111 is arranged to face the plasma gun 7. The second and third opposing electrodes 112 and 113 are arranged so as to face and be parallel to each other in the electron beam emission direction of the electron gun 5. Each of the counter electrodes 1
11 , 112 , 113 have mutually opposing surfaces S
Rectangular permanent magnets 121, 122,
123 is built-in. Each of the support shafts 101, 1
02 and 103 are electrically connected to the plasma gun 7, and a DC power supply 13 for applying a negative potential to the plasma gun 7 is interposed in the wiring that connects each of the members. A potential gradient can be applied between the plasma gun 7 and each of the opposing electrodes 111 , 112 , 113 . Three air-core coils 141 and 142 are located near the outer surface of three side walls other than one side wall of the chamber 1 where the plasma gun 7 is provided.
, 143 are the respective counter electrodes 111 , 112 , 11
It is placed in correspondence with 3.

A holder 15 for holding a base material is located near the upper part of the sheet-like plasma generation area in the chamber 1.
is provided, and the holder 15 is supported and suspended by a rotating shaft 16. The rotating shaft 16 is connected to a variable power source 17, and the rotating shaft 16 is connected to the holder 1 through the rotating shaft 16.
A negative voltage is applied to the terminal 5. A reaction gas introduction pipe 18 is connected to the lower side wall of the chamber 1 .

A shutter 19 is provided below the holder 15.
is located. The shutter 19 is a main shutter member consisting of a circular bottom plate 20 disposed below the holder 15 and a vertical semi-cylindrical frame 21 integrated with the bottom plate 20, as shown in FIGS. 3 and 4. 22, and an auxiliary shutter member 23 which is combined with the vertical semi-cylindrical frame 21 of the main shutter member 22 and forms a vertical semi-cylindrical frame that surrounds the holder 15. The main shutter member 22 can be moved in an arc by an L-shaped arm 24 extending from the upper wall of the chamber 1. The auxiliary shutter member 23 can be moved forward and backward by a drive rod 25 extending from the side wall of the chamber 1.

Next, the operation of the above-mentioned ion plating apparatus will be explained in detail.

First, the base material 26 is held in the holder 15, and a desired vapor deposition substance is placed in the crucible 4 of the vapor deposition source 3. Subsequently, the main shutter member 22 of the shutter 19 is moved by the L-shaped arm 24, and the auxiliary shutter member 23 is advanced by the drive rod 25.
The open ends of the vertical semi-cylindrical frame 21 and the auxiliary shutter member 23 having the shape of the vertical semi-cylindrical frame are brought into contact with each other, and the lower part of the holder 15 is placed on the bottom plate 20, and the outer periphery of the holder 15 is placed on the vertical side. It is surrounded by a semi-cylindrical frame 21 and an auxiliary shutter member 23 having a vertical semi-cylindrical frame shape. Continuing, operate the vacuum pump (not shown) to pass the exhaust pipe 2 into the vacuum chamber 1.
The gas inside the chamber 1 is evacuated to bring the inside of the chamber 1 to a predetermined degree of vacuum.

Next, a negative voltage is applied from the variable power source 17 to the base material 26 through the rotating shaft 16 and the holder 15, and while the holder 15 is rotated by the rotating shaft 16, an electron beam is emitted from the electron gun 5. The electron beam is scanned by a deflecting magnet 6 and irradiated onto the deposited material contained in the crucible 4 to melt and evaporate it. At the same time, when argon gas or the like is supplied to the plasma gun 7 and plasma is generated from the plasma gun 7, the plasma gun 7 is placed opposite to the plasma gun 7, and a potential gradient is created between the plasma gun 7 and the plasma gun 7 by the power source 13. The first to third counter electrodes 111, 1
12 , 113 , the plasma 27 is drawn into the chamber 1 through the constriction part 9 . At this time, the respective opposing electrodes 111 , 112 , 113 are rectangular permanent magnets 121 , 122 such that the surfaces facing each other serve as south poles.
, 123 are built-in, and the counter electrodes 111 , 1
12 and 113 (near the outer surface of the side wall of chamber 1)
Since the air-core coils 141 , 142 , 143 are arranged in the holder 15 as shown in FIG. Horizontal magnetic fields (magnetic flux densities) B1, B2, and B3 are generated. When such a magnetic field is generated, the plasma 27 extracted from the plasma gun 7 has the respective magnetic flux densities B1 and B2.
, B3, each of the magnets 121, 122,
123 , sheet-like plasma with high plasma density is formed near the bottom of the holder 15 without causing loss of plasma amount. Further, by adjusting the amount of current supplied to the air-core coils 141, 142, 143, a stronger magnetic field is generated, and a sheet-like plasma with a higher density is formed. Moreover, the planar shape of the sheet-shaped plasma 27 can be controlled by adjusting the amount of current supplied to the air-core coils 141 , 142 , 143 . In forming such sheet-like plasma 27, the second and third opposing electrodes 112 and 113
are arranged to face each other in the electron beam emission direction of the electron gun 5, so that the electron beam emission direction from the electron gun 5 is aligned with the second and third opposing electrodes 112.
, 113 are prevented from being influenced by the magnetic fields of permanent magnets 122 , 123 built in. In addition, when generating the sheet-like plasma 27, the magnetic flux density is determined by the line connecting the center of the crucible 4 and the center of the holder 15, the plasma gun 7, and each of the opposing electrodes 111, 112, 1.
The intersection point with the plane formed by 13 is the minimum, and the magnetic flux density increases from the intersection point toward the magnets 121 , 122 , and 123 . That is, the density of the sheet plasma 27 becomes minimum at the intersection, and increases from the intersection toward the magnets 121 , 122 , 123 .

When such a sheet-like plasma 27 with a high plasma density is formed near the bottom of the holder 15 (substrate 19), a process in which the vaporized deposition material vaporized by the vapor deposition source 3 rises into the plasma 27 occurs. is efficiently ionized. In the preparatory stage of film formation, the base material 26 held on the lower surface of the holder 15 has its lower side facing the shutter 1.
Since the outer periphery of the bottom plate 20 of No. 9 is surrounded by the vertical semi-cylindrical frame 21 and the auxiliary shutter member 23 having a vertical semi-cylindrical frame shape, the plasma 27 is prevented from going around to the base material 26 side. will be reliably prevented.

After the preparation for film formation is completed, the main shutter member 22 of the shutter 19 is moved in an arc shape by the L-shaped arm 24, and the auxiliary shutter member 23 is retreated by the drive rod 25, so that the holder is moved as shown in FIG. When the No. 15 base material 26 is opened, the ionized deposition material (positive ion deposition material) is transferred to the base material 26 to which the negative voltage has been applied.
A predetermined film is formed on the surface of the base material 26 by being accelerated and collided with the base material 26.

Therefore, according to the ion plating apparatus of the present invention described above, a sheet-like plasma 27 with high plasma density can be formed near the bottom of the base material 26 held on the lower surface of the holder 15. In the formation of the sheet-like plasma 27 (film formation preparation stage), the shutter 19 disposed below the base material holder 15 is connected to the bottom plate 20 and the bottom plate 20.
The main shutter member 22 is composed of a vertical semi-cylindrical frame 21 integrated with the main shutter member 22, which is movable in an arc shape by an L-shaped arm 24, and a vertical semi-cylindrical frame 21 that is connected to the vertical semi-cylindrical frame 21 and surrounds the holder. The auxiliary shutter member 23 has a semi-cylindrical frame shape and can be moved forward and backward by a drive rod 25, thereby preventing the plasma 27 from going around to the base material 26 side. Same member 2
This can be reliably prevented by the vertical semi-cylindrical frame formed by connecting the vertical semi-cylindrical frame 21 of No. 2 and the auxiliary shutter member 23 having a vertical semi-cylindrical frame shape. As a result, by opening the shutter 19 and forming a film, the base material 2
6. Thin films with good film quality can be formed at high speed on the surface.

[0025] In the above embodiment, the shape of the vertical half frame and the auxiliary shutter member constituting the main shutter member are semi-cylindrical frames, but the present invention is not limited to this. For example, it may be a vertical half-square cylindrical frame. Further, the opening/closing operation of the auxiliary shutter member of the vertical semi-cylindrical frame may be performed by an arcuate rotational movement.

In the above embodiment, a rectangular permanent magnet is built into the opposing electrode, but an oblong permanent magnet may be built into the opposing electrode. In particular, when increasing the plasma current supplied to the plasma gun to further increase the film formation rate, it is preferable to incorporate an oblong permanent magnet in the opposing electrode.

In the above embodiment, an example was explained in which the film was formed from only the vapor deposited material contained in the crucible, but as shown in FIG. 2, the reaction gas, For example, it is also possible to form a metal nitride coating by introducing nitrogen gas into the chamber 1.

[0028]

As described in detail above, according to the present invention, even if high-density plasma is generated in a vacuum chamber, it is possible to reliably prevent the plasma from going around to the substrate side in the film formation preparation stage, and as a result, the plasma It is possible to provide an ion plating apparatus capable of rapidly forming a thin film with good film quality on the surface of a material.

[Brief explanation of the drawing]

FIG. 1 is a schematic cross-sectional view of an ion plating apparatus showing an embodiment of the present invention.

FIG. 2 is a sectional view taken along line II-II in FIG. 1.

FIG. 3 is a perspective view for explaining the formation of sheet-like plasma by the ion plating apparatus of FIG. 1;

FIG. 4 is a perspective view showing a state in which the shutter of the ion plating apparatus of FIG. 1 is opened.

[Explanation of symbols]

1... Vacuum chamber, 3... Evaporation source, 4... Crucible, 4a... Hole, 5... Electron gun, 7... Plasma gun, 111, 112,
113...Counter electrode, 121, 122, 123...
Permanent magnet, 141, 142, 143... air core coil, 15... holder, 17... variable power supply, 18... gas introduction tube,
19...Shutter, 20...Bottom plate, 21...Vertical semi-cylindrical frame, 22...Main shutter member, 23...Auxiliary shutter member, 2
6... Base material, 27... Sheet-like plasma.

Claims (1)

[Claims] 1. A vacuum chamber, a substrate holder disposed near an upper part of the chamber, a shutter for shielding the substrate held by the substrate holder from deposition of a vapor deposition substance, and the a deposition source for evaporating a deposition material disposed near the bottom of the chamber; a plasma gun disposed on the side wall of the chamber; and a plasma gun disposed near the inner surface of the side wall of the chamber for directing plasma from the plasma gun into the chamber. In the ion plating apparatus, the shutter includes a main shutter member consisting of a bottom plate and a vertical half-frame body integrated with the bottom plate, and a main shutter member connected to the vertical half-frame body. An ion plating apparatus comprising: an auxiliary shutter member having a vertical half-frame shape surrounding the holder;