JPH05209269A - Plasma scanning apparatus in thin film forming device - Google Patents

Abstract

PURPOSE:To provide a plasma scanning apparatus controlling the converging position of a plasma beam to the anode and capable of properly adjusting the condition of film forming. CONSTITUTION:In a thin film forming apparatus in which a plasma beam P generated by a plasma gun 10 is extracted into a vacuum vessel 2 by a magnetic field formed by a hollow coil 12, and this plasma beam P is converged on the anode 7 by a magnetic field formed by a magnet 8, an annular body 13 made of magnetic material provided with an electromagnets Ma and Mb concentrically confronted with the hollow coil 12 are deposited, and a power source 16 and a power source controller 17 are connected to the electromagnets Ma and Mb.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma scanning apparatus in a thin film forming apparatus for forming a material by focusing a plasma beam generated by a plasma gun on an anode.

[0002]

2. Description of the Related Art Conventionally, a plasma beam has been used in a thin film forming apparatus such as vacuum deposition, ion plating and plasma CVD. For example, in the physical vapor deposition type thin film forming apparatus 100 shown in FIG.
The plasma beam 102 generated in
Is drawn out into the vacuum container 104 by the magnetic field formed by the above, and is focused on the vapor deposition material 107 portion accommodated in the crucible 105 by the action of the magnetic field formed by the permanent magnet 106 below the crucible 105 serving as the anode, and this vapor deposition is performed. The material 107 is heated. The vapor deposition material 107 heated by the plasma beam 102 evaporates, is partially ionized when passing through the region of the plasma beam 102, and collides with the film formation material 109 held in the material holder 108 to cause this film formation material 109 to collide. A film is formed on the surface of the film forming material. When the film forming material 109 has a ground potential, vacuum deposition is performed, and when the film forming material 109 is negatively charged, ion plating is performed. In the case of continuously forming a film on a long thin film forming material by plasma CVD, ion plating, or the like, two elongated permanent magnets 110, 1
11 are arranged so that their N poles face each other across the plasma beam 102, and the plasma beam 102 is formed into a sheet to form a film.

[0003]

However, in the above-mentioned conventional thin film forming apparatus 100, the shape and the focusing area of the plasma beam 102 focused on the anode are hollow coils 103.
Although it is determined by the magnetic field formed by the magnetic field, the magnetic field formed by the permanent magnet 106 located in the anode part, and the like, since these magnetic fields are always constant, the shape of the plasma beam 102 and the focusing region are always unchanged. Met.

Therefore, in order to make the film thickness distribution on the surface of the film forming material 109 uniform, there is no method other than rotating the film forming material 109, especially when the film forming material 109 is a long thin plate. Has a problem that it is impossible to rotate the material to be deposited and it is impossible to form a film having a substantially uniform thickness.

Further, when a plurality of plasma guns are arranged side by side to form a film, the plasma guns cannot be sufficiently brought close to each other due to the dimensional restrictions of the hollow coil and the like, so that the boundary portion of each plasma beam is completely formed. However, there is a problem that a uniform film formation distribution cannot be obtained.

[0006]

Therefore, the present invention has been made for the purpose of providing a plasma scanning apparatus of a thin film forming apparatus capable of arbitrarily changing the focusing position of the plasma beam. A magnetic material annular body having an electromagnet concentrically opposed to the coil is disposed, and a power source and a power source control device are connected to the electromagnet.
A plurality of pairs of the facing electromagnets may be provided inside the magnetic material annular body. Further, the magnetic material annular body may be provided with a rotating mechanism that rotates about the center of the annular body.

[0007]

In the above plasma scanning device, the plasma beam drawn into the vacuum container is deflected in the direction of the magnetic flux formed by the electromagnet operated by the power supply and the power supply control device while converging on the anode. Further, when the direction of the current applied to the facing electromagnet is changed, the direction of the magnetic flux is changed and the focusing position of the plasma beam with respect to the anode is moved. Further, when the magnitude of the current applied to the opposing electromagnets is changed, the magnetic flux density is changed and the deflection amount of the plasma beam is changed according to the current change.

In the case where a plurality of pairs of electromagnets are provided, the focusing position of the plasma beam with respect to the anode changes in multiple steps when the pair of electromagnets to which a current is applied is switched. Further, in the case where the annular body is provided with the rotating mechanism, when the annular body is rotated, the converging position of the plasma beam continuously moves while making a circular motion on the anode.

[0009]

Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 shows a first embodiment of a plasma scanning device in a physical vapor deposition type thin film forming apparatus 1 according to the present invention. The vacuum container 2 has a vacuum exhaust device (not shown) sucking and exhausting the internal air from an exhaust port 3 to perform physical vapor deposition. The proper vacuum degree (about 10 ^-1 Pa to 10 ^-2 Pa) is maintained.
The material holder 4 for holding the film-forming material 5 is arranged above the vacuum container 2, and the material holder 4 may be at ground potential or negative potential. The crucible 6 (anode) containing the vapor deposition material 7 is arranged in the lower portion of the vacuum container 2. The permanent magnet 8 is arranged below the crucible 6, and the S pole is directed upward. A plasma gun 10 is provided on the side wall of the plasma emission part 9 protruding outward from the side wall of the vacuum container 2, and a plasma generating gas 11 such as argon or hydrogen is supplied to the plasma gun 10. ..

The hollow coil 12 is connected to a DC power source (not shown) and is arranged so as to surround the plasma emission unit 9. As shown in FIG. 2, the ring 13 made of a magnetic material is provided with a pair of iron core portions 14a and 14b facing each other on the inner peripheral portion, and the coils 15a and 15b are provided on the iron core portions 14a and 14b.
Is wound around to form electromagnets Ma and Mb, which are arranged concentrically with the hollow coil 12 so as to surround the plasma emission part 9. Also, the coils 15a and 15b
Are connected to a power supply 16 respectively, and the power supply 16 for the coils 15a and 15 is based on a signal from the power supply control device 17.
The output current of is adjusted.

In the physical vapor deposition type thin film forming apparatus 1 having the above structure, the plasma beam P generated by the plasma gun 10 is generated.
Is drawn out into the vacuum chamber 2 by the magnetic field formed by the hollow coil 12, is focused on the vapor deposition material 7 by the magnetic field formed by the permanent magnet 8 below the crucible 6, and heats the vapor deposition material 7. As a result, the vapor deposition material 7 of the heated portion
Evaporates and is partially ionized when passing through the region of the plasma beam P and collides with the film-forming material 5 held in the material holder 4 to form a film on the surface thereof. In addition, at the time of vapor deposition,
For example, a reaction gas 18 such as nitrogen or oxygen may be introduced into the vacuum container 2.

The plasma beam P drawn into the vacuum chamber 2 can be deflected when passing through the ring 13. For example, the coil 15 of the electromagnets Ma and Mb
When a current is applied to a and 15b, the electromagnet Mb moves from the electromagnet Ma
When a magnetic field having a vertically upward magnetic flux traversing the plasma beam P is formed toward, the plasma beam P drawn into the vacuum container 2 is vertically upwardly deflected by the magnetic field as a plasma beam Pa shown by a dotted line. Be done. Next, the plasma beam Pa deflected vertically upward is deflected toward the crucible 6 by the magnetic flux generated by the permanent magnet 8. Here, since the plasma beam Pa moves above the plasma beam P, the magnetic force received from the permanent magnet 8 is weaker than that of the plasma beam P. Therefore, from the right side in the drawing, that is, from the side of the plasma gun 10 with respect to the focusing position of the plasma beam P. Focus on the vapor deposition material 7 at a further distance from the sight.

On the other hand, when a reverse current is applied to the coils 15a and 15b and a magnetic field having a vertically downward magnetic flux from the electromagnet Ma to the electromagnet Mb is formed, the plasma beam P drawn into the vacuum chamber 2 has the above magnetic field. Thus, it is deflected vertically downward like a plasma beam Pb indicated by a chain line. Next, the plasma beam Pb deflected vertically downward is deflected toward the crucible 6 by the magnetic flux generated by the permanent magnet 8. Here, since the plasma beam Pb moves below the plasma beam P, the magnetic force received from the permanent magnet 8 is stronger than that of the plasma beam P.
That is, it is focused on the vapor deposition material 7 closer to the plasma gun 10 side.

Therefore, the focusing position of the plasma beam P with respect to the vapor deposition material 7 is changed in the front-back direction by periodically switching the application direction of the current applied from the power supply 16 to the coils 15a and 15b based on the signal from the power supply control device 17. It is possible to adjust the film formation area for the film formation target material 5 by increasing the dissolution area of the vapor deposition material 7 by changing the value. Also, by changing the direction and magnitude of the current applied to the coils 15a, 15b, that is, the coils 15a, 15b
By changing the applied current of b in a sinusoidal wave, for example, the convergence position of the plasma beam P can be continuously changed.

FIG. 3 shows a second embodiment of the present invention. This figure is a view of the ring 13 as seen from the plasma gun 10 side. In addition to the above-mentioned electromagnetic magnets Ma and Mb, iron core portions 14c and 14d are formed on the left and right sides of the inner circumference of the ring 13.
These iron cores 14c and 14d have coils 15c and
The electromagnets Mc and Md are formed by winding 15d.
Further, the coils 15c and 15d are connected to another power source 16 ', and the coil 1 is based on the signal from the power source control device 17'.
The current is output to 5c and 15d.

The above four electromagnets Ma, Mb, Mc, Md
In physical vapor deposition thin-film formation apparatus provided with a ring 13 having, as shown in FIG. 4, at time T ₀ through T _1, power supply 1
The output of 6'is turned off, and the electromagnet M from the power supply 16 is turned off.
When a current I ₁ is applied to the coils 15a and 15b of a and Mb to form a magnetic flux from the electromagnet Mb to the electromagnet Ma, the plasma beam P is deflected vertically upward, and the deposition material is distant from the plasma gun 10 side. Focus on 7.

Next, from time T _{1 to} T ₂ , the power supply 16 turns off the outputs to the coils 15a and 15b, and the power supply 16 'applies currents I ₁ to the coils 15c and 15d, respectively, so that the electromagnet Mc moves to the electromagnet Md. When a magnetic flux directed toward is formed, the plasma beam P is deflected to the left in the traveling direction, and the focus position of the plasma beam P moves on the vapor deposition material 7 in the same direction.

Subsequently, at time T _{2 to} T ₃ , the power supply 1
The output of 6'is turned off, and the power source 16 turns the coil 1
Applying current -I ₁ to each of 5a and 15b, electromagnet M
When the magnetic flux from a toward the electromagnet Mb is formed, the plasma beam P is focused on the vapor deposition material 7 closer to the plasma gun 10 side.

Then, at times T _{3 to} T ₄ , the power source 16
When the output from the power supply 16 'to the coils 15a and 15b is turned off and a current -I ₁ is applied from the power supply 16' to the coils 15c and 15d to form a magnetic flux from the electromagnet Md to the electromagnet Mc, the plasma beam P moves in the traveling direction. And is deflected to the right, and the focus position of the plasma beam P moves in the same direction.

As described above, by repeating the cycle of T _{0 to} T ₄ , the focusing position of the plasma beam P, that is, the melting position of the vapor deposition material 7 is continuously changed, and the film formation area for the film formation material 5 is changed. Can be expanded.

In the present embodiment, the coils 15a, 15
b is connected to the power source 16 and the coils 15c and 15d are connected to another power source 16 '.
It is also possible to connect d to the power supply 16 and switch the output to the coils 15a and 15b and the output to the coils 15c and 15d based on the output signal of the power supply control device 17.

The amount of deflection of the plasma beam P, the swing width of the focusing position, and the residence time at the focusing position are determined by the power source 1
It can be arbitrarily adjusted by adjusting the outputs of 6, 16 '.

Further, in the first embodiment described above, a case where a pair of electromagnets Ma and Mb are provided inside the ring 13 will be described.
In the second embodiment, two sets of electromagnet parts M are provided inside the ring 13.
Although the case where a, Mb and the electromagnets Mc, Md are provided has been described, a larger number of sets of electromagnets may be provided in the ring 13, and the focusing position of the plasma beam P may be finely moved as the number of electromagnets increases. The film controllability can be improved.

Furthermore, the power supplies 16 and 16 'do not have to be DC power supplies, but include both DC power supplies and AC power supplies,
You may make it apply the electric current which superimposed the alternating current on the direct current.

The physical vapor deposition type thin film forming apparatus of the third embodiment is shown in FIGS. In this physical vapor deposition device, a set of electromagnets M
A gear portion 23 is formed on the outer peripheral portion of the ring 13 having a and Mb. A worm 22 connected to a drive shaft of a motor 20 which is drive-controlled by a control device 21 is meshed with the gear portion 23. In the physical vapor deposition type thin film forming apparatus having the above configuration, when the motor 20 is driven in a state where a current is applied to the coils 15a and 15b to form a magnetic flux between the electromagnets Ma and Mb, the ring 13 rotates and plasma is generated. The deflection direction of the beam P continuously changes, and the focus position of the plasma beam P with respect to the vapor deposition material 7 continuously changes. By changing the rotation speed of the ring 13 depending on the position or temporarily stopping it at a specific position, it is possible to thicken the film formation at a specific place on the film formation material 5.

The physical vapor deposition type thin film forming apparatus of the fourth embodiment is shown in FIG. In this apparatus, two plasma guns 10 are arranged side by side, and one ring 13 has electromagnets Ma, Mb.
Are arranged on the left and right, and the electromagnet M is arranged on the other ring 13 '.
a ′ and Mb ′ are arranged on the left and right, a magnetic flux is formed from the left electromagnet Ma to the right electromagnet Mb in the left ring 13 in the figure, and a right electromagnet Mb ′ is formed in the right ring 13 ′ in the figure. A magnetic flux is formed from to the electromagnet Ma 'on the left side. Therefore, the plasma beam P emitted from the plasma gun on the left side is deflected to the right side in the figure,
The plasma beam P ′ emitted from the plasma beam on the right side is deflected to the left side in the figure, and the respective plasma beams P and P ′ are focused on the same region of the vapor deposition material. for that reason,
The evaporation of the vapor deposition material 7 is promoted, and the film formation rate is increased.

When the film-forming material 5 is a long thin plate and the plate width changes in the longitudinal direction, the coil 15 is changed in accordance with the change in the plate width.
By changing the current values for a and 15b and / or the coils 15a ′ and 15b ′, it is possible to change the evaporation area of the vapor deposition material 7 and secure the optimum evaporation area for the film formation material 5.

[0028]

As is apparent from the above description, in the plasma scanning apparatus in the thin film forming apparatus according to the present invention, the magnetic material annular body having the facing electromagnets is concentrically arranged with the hollow coil, and The electromagnet is connected to a power supply and a power supply control device.

Therefore, according to the thin film forming apparatus of the present invention, the output of the power source, for example, the magnitude or the direction of the applied current to the coil of the electromagnet is adjusted based on the signal from the power source control unit, whereby the plasma beam to the anode is adjusted. It is possible to freely adjust the film formation area, film thickness, film thickness distribution, etc. for the material to be film-formed by adjusting the focusing position and the residence time. Further, even when a long thin plate whose plate width changes in the length direction is continuously formed, the focusing region of the plasma beam can be adjusted according to the plate width, and an appropriate film thickness distribution and film thickness can be secured. it can. Furthermore, when plasma guns are installed side by side for deposition, the plasma guns can be brought close enough to focus multiple plasma beams in the same area without being restricted by the dimensions of the hollow coil, etc., and the deposition rate can be increased. Can be planned.

Further, in the case where a plurality of pairs of electromagnets are provided inside the annular body, the focusing position of the plasma beam can be finely changed by operating these electromagnet pairs in order, so that the film thickness can be controlled more finely. Is possible.

Further, in the case of having the rotating mechanism of the annular body, the focusing position of the plasma beam can be continuously or intermittently changed on the anode by controlling the rotating state of the annular body, and thus it is possible to perform finer adjustment. The film thickness can be controlled.

[Brief description of drawings]

FIG. 1 is a sectional view showing a schematic configuration of a thin film forming apparatus according to the present invention.

FIG. 2 is a front view of an annular body.

FIG. 3 is a front view showing another embodiment of the annular body.

FIG. 4 is a diagram showing a change in current applied to a coil.

FIG. 5 is a diagram showing a schematic configuration of another embodiment of the thin film forming apparatus.

FIG. 6 is a schematic configuration diagram showing a mechanism for rotating an annular body.

FIG. 7 is a front view of plasma beams emitted from juxtaposed plasma guns.

FIG. 8 is a cross-sectional view showing a schematic configuration of a conventional thin film forming apparatus.

[Explanation of symbols]

2 ... Vacuum container, 10 ... Plasma gun, 12 ... Hollow coil, 13 ... Ring, 14a, 14b ... Iron core part, 15a,
15b ... Coil, 16 ... Power supply, 17 ... Power supply control device, P
... Plasma beam, Ma, Mb ... Electromagnet.

Claims (3)

[Claims] 1. A thin film forming apparatus in which a plasma beam generated by a plasma gun is drawn into a vacuum chamber by a magnetic field formed by a hollow coil, and the plasma beam is focused on an anode by a magnetic field formed by a magnet, A plasma scanning device in a thin film forming apparatus, wherein a magnetic material annular body having an electromagnet concentrically opposed to the hollow coil is disposed, and a power source and a power source control device are connected to the electromagnet. 2. The plasma scanning device in the thin film forming apparatus according to claim 1, wherein a plurality of pairs of the facing electromagnets are provided on the magnetic material annular body. 3. The plasma scanning in the thin film forming apparatus according to claim 1, wherein the magnetic material annular body is provided with a rotating mechanism that rotates about a center of the annular body. apparatus.