JP2004149832A - Method and apparatus for ion plating - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method and apparatus for ion plating whereby the evaporation surface of a vapor deposition material is almost uniformly decreased in a film formation process. <P>SOLUTION: A rod-like vapor deposition member 22 is loaded into the penetration hole of a hearth installed at the lower part of a vacuum vessel of an ion plating apparatus 10. When an elevator member 32 is elevated, power is transmitted from a rack section 32a to a pinion section 36 and the teeth 30c of a flange 30b, and the rotation of a cylinder section 30 causes a push-up bar 28 to rotate. The push-up bar 28 is elevated while being supported by a supporting member 32b of the elevator member 32. The supporting member 32b is connected to the push-up bar 28 through a bearing section 38, and by the elevation of the elevator member 32, the push-up bar 28 is elevated while rotating. Thus, the vapor deposition material 22 arranged at the step section 28a of the push-up bar 28 is elevated while rotating. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an ion plating method and an apparatus therefor, and more particularly, to a method for supplying a vapor deposition material that is disposed in a through hole of a hearth and is evaporated and ionized by heating.
[0002]
[Prior art]
The ion plating method is a method in which a deposition material is heated and sublimated by using plasma, a generated vapor of a deposition substance is ionized, adhered (incident) to a substrate, and formed into a film.
[0003]
In the ion plating apparatus, the deposition material is disposed, for example, on a hearth and evaporated.
[0004]
When hearth is used, a vapor-deposited material formed in a tablet shape or a rod shape (hereinafter, both are collectively referred to as a rod shape) is loaded into a through hole provided in the hearth, and is pushed up by a thrust mechanism according to progress of evaporation. It is pushed up and rises to evaporate while always holding a constant evaporation surface. A preliminary chamber is provided below the hearth independently of the film forming chamber, and a turntable is provided in the preliminary chamber, and a rod of a new vapor deposition material is previously arranged on the turntable. When the rod of the vapor deposition material in use rises in the hole of the hearth, the piston of the push-up mechanism is lowered, and the turntable rotates to position the rod of the new vapor deposition material. The rod of fresh vapor deposition material is pushed up by the piston and added to the lower end of the rod of vapor deposition material in use in the through hole. Thus, film formation is continuously performed without opening the film formation chamber to the atmosphere and without interrupting the film formation operation (for example, see Patent Document 1).
[0005]
[Patent Document 1]
JP-A-11-43763
[Problems to be solved by the invention]
However, in the case of an ion plating apparatus using a hearth, if the discharge current for generating plasma is reduced, the evaporation behavior may change, which may cause a problem in the film forming operation. In other words, the operation current of the apparatus lacks the downward elasticity of the discharge current. This problem can occur remarkably in the case of an ion plating apparatus using a so-called pressure gradient plasma gun as a plasma source.
[0007]
The above problem will be specifically described.
[0008]
When evaporating the evaporation material disposed on the hearth, if the discharge current is reduced to cope with the difference in volatility of the evaporation material and desired film formation characteristics, the current density of the plasma incident on the evaporation material ( The bias of the distribution of (plasma density) becomes large, and the density of the current density of the incident plasma becomes remarkable. Then, the evaporation proceeds from the portion of the evaporation surface of the deposition material having a high plasma current density, specifically, the portion of the evaporation surface closer to the plasma gun. For this reason, the evaporation surface does not uniformly decrease, and in an extreme case, only one side of the rod 1 of the evaporation material is scraped as shown in FIG. Then, if this state is continued, the portion of the evaporation surface remaining without evaporation proceeds, for example, grows into a prismatic projection 1a as shown in FIG. 1 (b). When such a prism-shaped protrusion 1a appears, if a magnetic field or an electric field is formed in the hearth in order to concentrate the incident plasma on the rod 1 of the deposition material, the intensity of the formed electric field or the like is further increased. Even the distribution changes.
[0009]
As described above, when a phenomenon occurs in which the evaporation surface of the evaporation material is reduced, the flight trajectory of the evaporated evaporation material particles changes, and the thickness of the film formed by attaching the particles to the substrate becomes uneven, and In addition, there is a possibility that the quality of film formation may be deteriorated.
[0010]
The present invention has been made in view of the above-described problems, and has as its object to provide an ion plating method and an ion plating method capable of reducing an evaporation surface of a deposition material substantially uniformly in a film forming process.
[0011]
[Means for Solving the Problems]
The ion plating method according to the present invention is characterized in that while pushing up a rod-shaped deposition material loaded in a through hole formed in a hearth provided in a lower part of a film formation chamber, the material is evaporated and ionized by plasma to face the hearth. In an ion plating method for forming a film by attaching particles of the deposition material to a substrate disposed on the upper part of the film forming chamber,
It is characterized in that the deposition material is pushed up while being rotated or rotated.
[0012]
Further, in order to realize the above-described ion plating method, the ion plating apparatus according to the present invention is characterized in that it has a circular motion means for rotating or rotating the deposition material. Here, in the present specification, the rotating means and the rotating means are collectively referred to as a circular moving means for convenience.
[0013]
Thus, even when the current density of the plasma applied to the deposition material varies, the evaporation surface of the deposition material can be reduced substantially uniformly during the film formation process. For this reason, for example, the downward elasticity of the discharge current as an operating condition of the device can be increased.
[0014]
In this case, when the plasma is supplied by a pressure gradient type plasma gun and the film is formed while concentrating the plasma on the deposition material by a beam correcting device provided around the deposition material, the effect of the present invention is more preferably obtained. be able to.
[0015]
BEST MODE FOR CARRYING OUT THE INVENTION
A preferred embodiment (hereinafter, referred to as an embodiment) of an ion plating method and apparatus according to the present invention will be described below with reference to the drawings.
[0016]
First, the basic configuration of the ion plating apparatus according to the present embodiment will be described with reference to FIG.
[0017]
The ion plating apparatus 10 includes a vacuum chamber 12 as a film forming chamber, a plasma gun (plasma beam generator) 14 as a plasma source for supplying a plasma beam PB into the vacuum chamber 12, and a An anode member 16 is provided to receive the plasma beam PB, and a transport mechanism 18 for appropriately moving a substrate holding member WH holding a substrate W on which a film is to be formed above the anode member 16.
[0018]
The plasma gun 14 is of a pressure gradient type, and its main body is provided on the side wall of the vacuum vessel 12. By adjusting the power supply to the cathode 14a, the intermediate electrodes 14b and 14c, the electromagnet coil 14d, and the steering coil 14e of the plasma gun 14, the intensity and distribution of the plasma beam PB supplied into the vacuum vessel 12 are controlled. Reference numeral 20a indicates an introduction path of a carrier gas composed of an inert gas such as Ar, which is a source of the plasma beam PB.
[0019]
The anode member 16 includes a hearth 16a, which is a main anode for guiding the plasma beam PB downward, and an annular auxiliary anode 16b disposed therearound.
[0020]
The hearth 16a is controlled to an appropriate positive potential, and sucks the plasma beam PB emitted from the plasma gun 14 downward. In the hearth 16a, a through hole TH is formed in a central portion where the plasma beam PB is incident, and the evaporation material 22 is loaded in the through hole TH. The vapor deposition material 22 is formed in a tablet shape or a rod shape. Hereinafter, the rod-shaped deposition material 22 will be described as an example. The supply mechanism of the deposition material 22 will be described later.
[0021]
The auxiliary anode 16b is constituted by an annular container concentrically arranged around the hearth 16a, and contains a permanent magnet 24a and a coil 24b in the container. The permanent magnet 24a and the coil 24b are magnetic field control members, and form a cusp-shaped magnetic field immediately above the hearth 16a, whereby the direction of the plasma beam PB incident on the hearth 16a is controlled.
[0022]
The transport mechanism 18 includes a number of rollers 18b that are arranged at equal intervals in the horizontal direction in the transport path 18a and support the substrate holding member WH, and rotate the rollers 18b to move the substrate holding member WH horizontally at a predetermined speed. And a driving device (not shown) for moving. The substrate W is held by the substrate holding member WH. In this case, the substrate W may be fixedly disposed above the inside of the vacuum vessel 12 without providing the transport mechanism 18 for transporting the substrate W.
[0023]
In FIG. 2, reference numerals 20b and 20c denote supply paths for supplying an atmospheric gas, reference numeral 20d denotes a supply path for supplying an inert gas such as Ar to the hearth 16a, and reference numeral 20e denotes an exhaust gas. The systems are indicated respectively.
[0024]
In the ion plating apparatus 10 configured as described above, during the film forming operation, the deposition material 22 is rotated or rotated by a deposition material supply mechanism having a circular motion unit, which will be described later, as the consumption by evaporation proceeds. It is pushed up to keep the evaporation surface constant. In this case, when the vapor deposition material 22 is formed, for example, in the shape of a rod having a diameter of about 30 mm and is consumed at an average speed of 0.5 mm / min, and is pushed up as the consumption is completed, for example, the maximum height If the upper end of the evaporation material 22 of about 10 mm is allowed to be partially reduced, it is sufficient to rotate or rotate at a minimum speed of 20 rpm.
[0025]
The vapor deposition material supply mechanism according to the present embodiment will be specifically described with reference to FIG.
[0026]
The vapor deposition material supply mechanism 26 according to the present embodiment has a push-up bar 28, a cylindrical portion 30, and a lifting member 32. Reference numeral 34 indicates a bellows that blocks these members from the outside air.
[0027]
At the tip (upper end) of the push-up rod 28, a stepped portion 28a is formed so that the stepped portion 22a of the half-split cylinder is engaged with one end (lower end) of the vapor deposition material 22 formed at both ends. A projection 28c is formed on a side surface of the shaft portion 28b of the push-up rod 28, and a lower portion of the shaft portion 28b is housed in the cylindrical portion 30 so as to be able to move up and down.
[0028]
The cylindrical portion 30 has a slit portion 30a formed on the side surface, and the projection 28c of the push-up rod 28 is engaged with the slit portion 30a. A flange 30b is formed at the lower end of the cylindrical portion 30, and teeth 30c are formed on the lower surface of the flange 30b.
[0029]
The elevating member 32 has a rack portion 32 a formed therein. The rack portion 32 a is meshed with a pinion portion 36, and the pinion portion 36 is meshed with a tooth 30 c of the cylindrical portion 30. A support member 32b extends above the elevating member 32. The support member 32b supports the push-up rod 28 via a bearing 38 provided between the support member 32b and the shaft 28b of the push-up rod 28. The lifting member 32 is configured to be raised and lowered by being urged by a pulse motor (not shown).
[0030]
The operation of the vapor deposition material supply mechanism 26 according to the present embodiment configured as described above will be described.
[0031]
When the lifting member 32 is raised by being biased by the pulse motor, the pinion 36 rotates with the rise of the rack 32a, and the flange 30b meshed with the pinion 36 rotates, so that the cylinder 30 rotates. With the rotation of the cylindrical portion 30, the push-up rod 28 in which the projection 28c is engaged with the slit portion 30a rotates integrally with the cylindrical portion 30. That is, the vapor deposition material supply mechanism 26 including the elevating member 32, the cylindrical portion 30, and the push-up rod 28 constitutes a circular motion means of the present invention. On the other hand, the push-up bar 28 is supported by the support member 32b of the elevating member 32 and rises. At this time, since the support member 32b and the push-up bar 28 are connected via the bearing portion 38, the force for rotating the push-up bar 28 is maintained as it is. Therefore, as the elevating member 32 moves up, the push-up rod 28 moves up while rotating.
[0032]
As a result, the vapor deposition material 22 disposed on the step 28a of the push-up rod 28 rises while rotating. In a state where the new vapor deposition material 22 is added to the lower end of the vapor deposition material 22 in use, the rotating and pushing action is transmitted from the new vapor deposition material 22 to the vapor deposition material 22 in use. The used vapor deposition material 22 is pushed up while rotating in the through hole TH of the hearth 16a. At this time, even if the distribution of the current density of the plasma applied to the deposition material 22 is biased, the evaporation surface of the deposition material 22 is rotated, so that the deposition material 22 is reduced substantially uniformly.
[0033]
When the vapor deposition material 22 is consumed and the lower end rises to a predetermined height, the lifting member 32 is lowered to lower the push-up bar 28. Then, the new vapor deposition material 22 is disposed on the step portion 28a of the push-up rod 28, the lifting member 32 is raised again, and the new vapor deposition material 22 is engaged with the step portion 22a of the vapor deposition material 22 in use. Then, the evaporation material 22 in use is evaporated, and when the evaporation material 22 in use completely disappears, a new evaporation material 22 connected below is continuously subjected to evaporation. For this reason, the film forming operation is performed continuously without interruption.
[0034]
Here, a replenishing mechanism of the new vapor deposition material 22 to the vapor deposition material supply mechanism 26 will be described with reference to FIG.
[0035]
The replenishment mechanism of the deposition material is constituted by a rotary table device 40. The rotary table device 40 includes a motor 42 and a rotary table 44 that is rotated by being biased by the motor 42. The rotary table 44 is formed with a stepped hole 44a, and a new vapor deposition material 22 is disposed in the hole 44a.
[0036]
When the rotary table 44 is rotated and the new vapor deposition material 22 is positioned just above the step portion 28a of the push-up bar 28 in a state where the push-up bar 28 is lowered, the push-up bar 28 is inserted through the hole 44a to make a new position. The deposition material 22 is pushed up.
[0037]
An ion plating method according to the present embodiment using the ion plating apparatus 10 configured as described above will be described.
[0038]
First, the vapor deposition material 22 is attached to the through hole TH of the hearth 16a arranged at the lower part of the vacuum vessel 12.
[0039]
On the other hand, the substrate W is arranged at a position above and opposite the hearth 16a.
[0040]
Next, a process gas according to the film forming conditions is introduced into the vacuum chamber 12.
[0041]
A DC voltage is applied between the cathode 14a of the plasma gun 14 and the hearth 16a.
[0042]
Then, a discharge is generated between the cathode 14a of the plasma gun 14 and the hearth 16a, thereby generating a plasma beam PB. The plasma beam PB reaches the hearth 16a by being guided by a magnetic field determined by the steering coil 14 and the permanent magnet 24a in the auxiliary anode 16b. At this time, since the argon gas is supplied around the vapor deposition material 22, the plasma beam PB is easily drawn to the hearth 16a.
[0043]
The deposition material 22 exposed to the plasma is gradually heated. When the evaporation material 22 is sufficiently heated, the evaporation material 22 sublimates, and the evaporation material evaporates (exits). The deposition material is ionized by the plasma beam PB, adheres (incidents) to the substrate W, and forms a film.
[0044]
By controlling the magnetic field above the hearth 16a by the permanent magnet 24a and the coil 24b, it is possible to control the flight direction of the deposition material, so that the plasma activity distribution above the hearth 16a and the reactivity of the substrate W The film-forming rate distribution on the substrate W can be adjusted according to the distribution, and a thin film with uniform film quality can be obtained over a wide area.
[0045]
With the progress of the film forming operation, the vapor deposition material 22 filled in the through hole HT is pushed up while rotating, and the vaporization material 22 evaporates uniformly from the evaporation surface to form a uniform film on the substrate W. Is performed. As the film formation progresses and the lower end of the vapor deposition material 22 rises to a predetermined height, a new vapor deposition material 22 is added to the currently used vapor deposition material 22 and the film formation operation is performed substantially without interruption. Is
[0046]
Regardless of the present embodiment described above, well-known appropriate means can be adopted for the elevating mechanism and the like of the evaporation material supply mechanism. At this time, well-known appropriate means can be used as the circular motion means.
[0047]
【The invention's effect】
According to the ion plating method of the present invention, the rod-shaped deposition material loaded in the through hole formed in the hearth provided in the lower part of the film forming chamber is evaporated and ionized by plasma while being pushed up, and is opposed to the hearth. In an ion plating method for depositing particles of a vapor deposition material on a substrate disposed above a film forming chamber to form a film, the vapor deposition material is pushed up while rotating or rotating, and an ion plating apparatus according to the present invention. According to the method, since there is a circular motion means for rotating or rotating the deposition material, the evaporation surface of the deposition material can be reduced substantially uniformly in the film forming process.
[Brief description of the drawings]
FIGS. 1A and 1B are diagrams for explaining a change in shape of an upper end portion of a vapor deposition material caused by progress of evaporation. FIG. 1A illustrates a state where an evaporation surface is reduced, and FIG. It is the figure which showed typically the state which advanced and formed the prismatic protrusion part, respectively.
FIG. 2 is a diagram showing a schematic configuration of an ion plating apparatus according to the present embodiment.
FIG. 3 is a perspective view of a deposition material supply mechanism according to the embodiment.
FIG. 4 is a diagram showing a schematic configuration of a deposition material supply mechanism used in the deposition material supply mechanism according to the embodiment.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 Ion plating apparatus 12 Vacuum container 14 Plasma gun 14a Cathode 14b, 14c Intermediate electrode 14d Electromagnet coil 14e Steering coil 16 Anode member 16a Hearth 16b Auxiliary anode 18 Transport mechanism 22 Evaporation material 22a, 28a Step 26 Evaporation material supply mechanism 28 Rod 28b Shaft 28c Projection 30 Tube 30b Flange 30c Teeth 32 Elevating member 32a Rack 32b Supporting member 36 Pinion 38 Bearing 40 Rotary table device 42 Motor 44 Rotary table

Claims (4)

While pushing up a rod-shaped deposition material loaded in a through-hole formed in a hearth provided at the lower part of the film formation chamber, the material was evaporated and ionized by plasma, and placed above the film formation chamber opposite to the hearth. In an ion plating method of forming a film by attaching particles of the deposition material to a substrate,
An ion plating method, wherein the deposition material is pushed up while being rotated or rotated. Supplying the plasma by a pressure gradient plasma gun,
2. The ion plating method according to claim 1, wherein the film is formed while concentrating the plasma on the deposition material by a beam correction device provided around the deposition material. While pushing up a rod-shaped deposition material loaded in a through-hole formed in a hearth provided at the lower part of the film formation chamber, the material was evaporated and ionized by plasma, and placed above the film formation chamber opposite to the hearth. In an ion plating apparatus for forming a film by attaching particles of the deposition material to a substrate,
An ion plating apparatus comprising a circular motion means for rotating or rotating the deposition material. A pressure gradient plasma gun for supplying the plasma,
4. The ion plating apparatus according to claim 3, further comprising: a beam modifying device provided around the vapor deposition material to concentrate the beam of the plasma on the vapor deposition material.

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