JP5262430B2 - Thin film manufacturing method and thin film manufacturing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a feeding method for successively melting a bar-like feed material effective for the long-term consistent film deposition from its fore end and feeding the molten material in a long-term consistent manner, in a thin film manufacturing method for executing the film deposition from an evaporation source scanned with the electron beam toward a substrate. <P>SOLUTION: A bar-like feed material 32 is directed above the evaporation source, and the bar-like feed material 32 is irradiated with the electron beam and the material at the evaporation source is melted and fed. The bar-like feed materials 32 are arranged on both sides of the evaporation source. The scanning range of the electron beam is above the bar-like feed materials and above the evaporation source. The scanning range of the electron beam above the evaporation source is fixed. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

  The present invention relates to a thin film manufacturing method and a manufacturing method.

  Thin film technology is widely deployed to improve the performance and miniaturization of devices. In addition, the thinning of devices is not only a direct merit for users, but also plays an important role in environmental aspects such as protecting earth resources and reducing power consumption.

  To advance the thin film technology, it is indispensable to meet the demands of industrial use such as high efficiency, stabilization, high productivity and low cost of the thin film manufacturing method. It has been.

  For high productivity of a thin film, a long-time film formation technique is essential, and in the production of a thin film by a vacuum deposition method, it is effective to supply a material to an evaporation source.

  The material supply to the evaporation source includes powder, granule, pellets and other various shapes of material input to the evaporation source, rod-shaped and linear materials directed to the evaporation source, and rod-shaped material from the bottom of the evaporation source. Various methods such as a method of injecting and a method of pouring a liquid material into the evaporation source are selected according to the materials used, film forming conditions, and the like. The temperature of the evaporation source fluctuates due to the addition of a cold feed material, and changes in the evaporation source temperature tend to cause fluctuations in the evaporation rate. In order to solve this problem, there is a method in which a rod-shaped material is used as a supply material, and the material is supplied by droplets obtained by sequentially dissolving the rod-shaped material, which is effective as a supply method in which thermal fluctuations with respect to the evaporation source are reduced.

  In Patent Document 1, when the evaporating raw material is heated and melted and supplied to the container, the position of the tip of the evaporating raw material being melted is continuously detected by an optical sensor, and the detection signal is Based on this, it is disclosed to adjust the feed rate of the evaporating raw material. Further, in Patent Document 2, a silicon raw material made of silane gas or the like is supplied in a reaction flame of halogen and hydrogen, and after sticking silicon fine particles to the starting material, the rod-like high-purity silicon is rotated and pulled up while being cooled with gas. A manufacturing method is disclosed.

Patent Document 3 discloses a method of supplying a pellet-like material to two locations of an evaporation source. Patent Document 4 discloses a method of supplying a rod-shaped material while rotating it. Patent Document 5 discloses a method for supplying a rod-shaped material after being dissolved.
Japanese Patent Laid-Open No. 2-47259 JP-A-62-41710 JP-A-6-17239 JP-A 63-26352 JP 58-104179 A

  The supply method in which the rod-shaped supply material is dissolved and supplied sequentially from the tip by an electron beam is an excellent method in that the fluctuation given to the evaporation source is small. It is necessary to replace the old bar-shaped feed material with a new bar-shaped feed material.

The rod-shaped feed material is exchanged by removing the rod-shaped feed material currently in use from the irradiation area of the electron beam and, instead, guiding the tip of a new rod-shaped feeding material to the irradiation area of the electron beam.

  In long-time film formation, it is important to stabilize the evaporation rate together with the replenishment of the evaporation material in order to stabilize the film thickness and film quality.

  To replace the rod-shaped feed material, it is necessary to remove the rod-shaped feed material currently in use from the irradiation area of the electron beam, and instead to guide the tip of a new rod-shaped feed material to the irradiation area of the electron beam. During this time, the material supply to the evaporation source is stopped, and the electron beam normally irradiated to the rod-shaped supply material is directly irradiated to the evaporation source.

  Therefore, since the solution is not supplied during the exchange of the rod-shaped feed material, the molten metal surface of the evaporation source is lowered, and the total amount of electron beams irradiated to the evaporation source is increased, both of which cause the temperature of the evaporation source to rise. .

  The evaporation rate of the evaporation material strongly depends on the surface temperature of the evaporation source, and in order to stabilize the evaporation rate, it is necessary to make the temperature change of the evaporation source as small as possible.

  An object of the present invention is to realize a supply method in which a rod-shaped supply material is dissolved and supplied sequentially from the tip, with the evaporation source temperature being stabilized.

In order to solve the above problems, the method for producing a thin film of the present invention comprises:
In a thin film manufacturing method in which a film is formed from an evaporation source scanned with an electron beam toward a substrate, a rod-shaped supply material is directed above the evaporation source, and the rod-shaped supply material is irradiated with an electron beam to thereby evaporate the evaporation source. Dissolving and supplying the material, and arranging the rod-shaped supply material on both sides of the evaporation source,
The scanning range of the electron beam is on the rod-shaped feed material and the evaporation source, and the scanning range of the electron beam on the evaporation source is constant.

  That is, when the control as in the present invention is not performed, when the supply of the rod-shaped supply material is stopped, the scanning range of the electron beam on the evaporation source spreads over the evaporation source below the lost rod-shaped supply material. In the present invention, to prevent this from happening, when the supply of the rod-shaped supply material is stopped, the scanning range of the entire electron beam is changed so that the scanning range of the electron beam on the evaporation source becomes constant. To control.

  In addition, the thin film manufacturing method of the present invention provides a plurality of rod-shaped supply materials arranged on both sides, melts and supplies them while exchanging them, shifts the exchange time on both sides, and changes the scanning range of the electron beam to the rod-shaped supply materials. It moves to the rod-shaped feed material side which is melt | dissolving at the time of replacement | exchange.

  In addition, the thin film manufacturing method of the present invention is characterized in that the rod-shaped supply material rotates about the axis.

  The thin film manufacturing method of the present invention is characterized in that the cross-sectional shape of the rod-shaped supply material is substantially circular.

Furthermore, in order to solve the above-described problems, the thin-film manufacturing apparatus of the present invention includes:
An evaporation source for holding an evaporation material for forming a thin film on a substrate, a first and a second material supply mechanism for sending the evaporation material as a rod-shaped supply material above the evaporation source, and storing and exhausting them A thin-film manufacturing apparatus including a vacuum chamber evacuated by means, an electron gun for irradiating an evaporation source with an electron beam, and an electron beam control device, wherein the first rod-shaped supply material and the second rod-shaped supply material Are sent to both sides of the main evaporation region of the evaporation source scanned by the electron gun and the control device, and the tip of the first rod-shaped supply material and the second rod-shaped supply material are melted by the electron beam. In addition, it has an exchange function for dropping the evaporation source and exchanging the first rod-shaped feed material and the second rod-shaped feed material with a replacement rod-shaped feed material, respectively, and the control device has a rod-shaped scanning range of the electron beam. In accordance with the timing of the material exchange It is characterized in that to change.

  In addition, the thin film manufacturing apparatus of the present invention is characterized by having a mechanism for rotating a rod-shaped supply material about its axis.

  According to the film forming method of the present invention, even when the rod-shaped supply material is replaced, the fluctuation of the supply amount of the material can be reduced and the amount of the electron beam applied to the evaporation source can be made constant. The temperature can be stabilized. As a result, the evaporation rate can be kept constant, and the film thickness and film quality stability can be improved.

  FIG. 1 is a drawing schematically showing the structure of a material supply means which is one embodiment of the present invention. FIG. 1A is a top view, and FIG. 1B is a side view (partly longitudinal sectional view).

  Above the evaporation crucible 9 forming the evaporation source, a rod-shaped supply material 32 is directed from the material supply device 6. The evaporating crucible 9 includes water-cooled copper hearth, refractory metals such as iron, nickel, molybdenum, tantalum and tungsten, alloys containing them, oxides such as alumina, magnesia and calcia, and various materials such as boron nitride and carbon. A refractory can be used. The evaporation crucible holds the molten material, and the material evaporates from the molten metal surface. The shape of the molten metal surface is defined by the shape of the evaporation crucible and is rectangular (illustrated in FIG. 2 (b), the same applies hereinafter), rounded rectangle (c), circle (a), ellipse (d), donut shape, Various shapes such as combinations thereof can be applied, but in order to deposit a large area, the substrate to be deposited is moved and the material is evaporated from the surface of the molten metal having a long shape in the width direction of the substrate. It is desirable.

  The vertical cross-sectional shape of the evaporation crucible 9 is rectangular or trapezoidal (illustrated in (e) and (f) of FIG. 2, the same applies hereinafter), a drum shape, and the like ((g ), (H)) and the like can be applied, but a reverse trapezoidal shape or a raw material supply region having a rounded bottom shape is more preferable from the viewpoint of uniform dissolution. FIG. 2 schematically shows an example of the shape of the evaporation crucible 9. 2 (a) and (e), (b) and (f), (c) and (g), and (d) and (h) are each one crucible.

  The material supply device 6 sends the rod-shaped supply material 3 above the material supply region 4 of the evaporation crucible 9. The feed mechanism 10 of the material supply mechanism 2 is appropriately selected from a chain method, a belt method, a push rod method, a roller method, and the like. For example, the chuck roller 11 having a convex portion can be fed while sandwiching the rod-like body from above and below. The pinching pressure is, for example, 3 to 50 kgf although it varies depending on the material, shape, and drawing speed of the rod-shaped body to be created. If the pinching pressure is too small, slipping may occur and smooth drawing may not be performed. Conversely, if the pinching pressure is too large, the rod-shaped body may be deformed or broken. In many cases, the rod-like body has an indeterminate side surface deviating from a geometric shape such as a complete cylinder, and therefore, the chuck roller is not easily pinched. Therefore, it is desirable to provide a buffer mechanism using a spring or the like in the chucking mechanism of the chuck roller.

The convex portion of the chuck roller 11 may be a needle-like protrusion, or may be conical or pyramidal. In order to improve the durability of the convex portion, a truncated cone-shaped or truncated pyramid-shaped projection is desirable, and a gear-shaped chuck roller is also preferable from the viewpoint of durability. For example, the frustoconical protrusion has an upper base radius of 0.3 to 2 mm, a lower base radius of 0.5 to 4 mm, and a height of 0.5 to 5 mm. In addition, the diameter of the chuck roller may be uniform in the length direction, but reducing the diameter of the chuck roller at the chuck position so as to wrap the rod-shaped supply material improves the chucking property and the rod-shaped supply material. This has the effect of preventing meandering in the delivery direction. The diameter of the chuck roller is, for example, 10 to 70 mm at the chuck position. If the diameter of the chuck roller is too small, the chuck roller is likely to be bent. If the diameter of the chuck roller is too large, the equipment becomes large and the equipment cost increases. In order to prevent meandering in the feeding direction of the rod-shaped feed material, it is more effective to use a plurality of sets of chuck rollers after reducing the diameter of the chuck roller at the chuck position.

  Further, in the push rod method, the rod-shaped supply material that is held at one end by the chuck 2 can be pushed in the axial direction by the push rod 3 to push the rod-shaped supply material above the evaporation crucible. In the chain method or belt method, for example, the chain or belt is circulated into a circular shape including a straight portion, and the holding jig for the rod-shaped supply material moves along the straight portion, whereby the rod-shaped supply material moves linearly and evaporates. Can be directed above the source.

  The material supply apparatus includes a rotation mechanism 38. The rod-shaped feed material 3 is rotated by the rotating mechanism 38 and is fed out by the feeding mechanism. For the rotation mechanism 38, a roller type, a gear type, or the like can be used. For example, as shown in a schematic side view in FIG. 3 (a) and a schematic cross-sectional view in FIG. 3 (b), the rod-shaped feed material rotating roller 39 having a convex portion rotates while sandwiching the rod-shaped feed material 32 from above, below, left and right. I can do it. The pinching pressure is, for example, 3 to 50 kgf, although it varies depending on the material, shape, and feed speed of the rod-shaped supply material. If the pinching pressure is too small, sliding may occur and smooth rotation may not be performed. Conversely, if the pinching pressure is too large, the rod-shaped supply material may be deformed or broken. The rod-shaped supply material may have an irregular side surface deviating from the complete cylindrical shape, and the pinched state of the rod-shaped supply material rotating roller 39 is not easily stabilized. Therefore, it is desirable to provide a buffering mechanism such as a spring in the pinching mechanism of the rod-shaped body rotating roller 39. The rod-shaped feed material can also be rotated by pressing the gear-shaped rotating body against the rod-shaped feed material.

  In order to stabilize the balance between the rotation and feeding of the rod-shaped feed material body, for example, either the rotational movement or feeding of the rod-shaped feed material can be made intermittent to reduce the torsional stress applied to the rod-shaped feed material. Further, it is possible to prevent the rod-shaped supply material from being damaged due to the torsional stress. The number of revolutions of the rod-shaped supply material varies depending on the material of the rod-shaped supply material, the delivery speed, and the like, but is 0.2 to 4 rpm for a delivery speed of 0.5 to 10 cm / min, for example.

  The rod-shaped supply material sent out by the feed mechanism 10 is transported along the transport guide 13 as necessary. The conveyance guide can be constituted by a roller, a fixed post, a fixed guide, and the like. By using the conveyance guide, it is possible to prevent meandering of the rod-shaped supply material, breakage of the rod-shaped supply material due to stress using the chuck mechanism as a fulcrum, and reduce the driving load of the delivery mechanism. The position of the conveyance guide may be fixed, but can be made movable by the spring mechanism 33 or the like. By making the conveyance guide movable, the followability to the position fluctuation of the rod-shaped supply material is improved, and the conveyance can be further stabilized. Note that the conveyance guide 13 may be omitted depending on circumstances, such as when there is no room to provide the conveyance guide due to restrictions on the shape of the equipment.

The rod-shaped supply material fed out by the feed mechanism 10 and transported along the transport guide 13 goes upward of the evaporation crucible 9. The supply electron beam 16 is irradiated from the electron gun 15 to the vicinity of the tip portion of the rod-shaped supply material, and the rod-shaped supply material is liquefied from the tip portion and dropped into the evaporation crucible as droplets 14. Although depending on the type of raw material, the shape of the rod-shaped body, and the conveyance speed, the power of the supply electron beam applied to the rod-shaped supply material is preferably about 5 to 100 kW. If it is 5 kW or less, there may be a problem in securing the dissolution rate of the rod-shaped feed material, and if it is 100 kW or more, the rod-shaped feed material may be melted before reaching the upper part of the evaporation crucible and droplets may be dropped.

  By feeding the rod-shaped feed material while rotating it, the tip of the rod-shaped feed material is uniformly irradiated with an electron beam, so that undissolved residue hardly occurs and the fluctuation of the melted state is small. Due to these effects, since the droplets are stably supplied to the evaporation crucible, the evaporation state of the evaporation crucible can be stabilized.

  The evaporation crucible 9 is irradiated with an evaporation electron beam 18 from an electron gun 15, and the evaporation material is in a liquid phase state in which part of the evaporation material is being evaporated by heating with the evaporation electron beam. Although depending on the type of evaporation material and the evaporation rate, the acceleration voltage of the electron beam is preferably -8 kV to -30 kV and the power is preferably about 5 to 280 kW. If it is 5 kW or less, there may be a problem in securing the dissolved state, and if it is 280 kW or more, the evaporation material may be scattered or bumped.

  By emitting the supply electron beam 16 used for melting the rod-shaped supply material and the evaporation electron beam 18 used for film formation from the single electron gun 15, the equipment can be simplified and the equipment cost can be reduced.

  Either a straight gun or a deflection gun can be used as the electron gun, but when a large area film is formed, a straight gun is used because of its high output and wide scanning range of the electron beam. Is desirable. However, from the viewpoint of preventing contamination inside the electron gun barrel, it is preferable to bend the beam trajectory by several degrees because it is effective and has little influence on the evaporation electron gun.

  In continuous vacuum deposition, which is excellent in mass production and typified by a winding type, as shown in FIG. 4, using a rectangular crucible wider than the film forming width 35 ensures film thickness uniformity in the width direction. It is effective for. The supply electron beam irradiation position 37 and the melting and dropping position of the rod-shaped supply material are set further outside the evaporation electron beam scanning range 36. By setting the irradiation position of the supply electron beam and the melting and dropping position of the rod-shaped supply material to the outside of the scanning range of the evaporation electron beam, the change in the hot water temperature due to the material supply and the vibration of the hot water surface can be reduced. The influence can be reduced. It is also possible to set the irradiation position of the supply electron beam and the melting and dropping position of the rod-shaped supply material to the outside away from the scanning range of the evaporation electron beam.

  Such control of the electron beam irradiation position is realized by fine control of the magnetic field generating coil current by the electron beam scanning circuit of the electron gun system.

  As shown in FIG. 6, the rod-shaped supply material 32 is disposed on both sides of the scanning range of the evaporation electron beam 18 and melted and supplied using the supply electron beam 16. Since the influence of the temperature change and the vibration of the molten metal surface on the film formation can be made symmetrical in the substrate width direction, it is advantageous to ensure the film thickness uniformity in the width direction. In addition, even when it becomes necessary to replace the rod-shaped feed material due to the short length of the rod-shaped feed material in the film formation for a long time, the rod-shaped feed material is placed between the evaporation electron beam scanning range and the If the length of the rod-shaped feed material is short on both sides, the rod-shaped feed material is exchanged alternately so that the material supply can be performed for a long time without interruption.

  As shown in FIG. 9, when the supply electron beam 16 becomes a direct hit beam 17 during material replacement and is directly irradiated to the molten metal in the evaporation crucible when the rod-shaped supply material 32 is replaced, the molten metal temperature rapidly rises and the evaporation rate is increased. Fluctuation is likely to occur. Also, the rod-shaped supply material is disposed on both sides of the evaporation electron beam scanning range, and the rod-shaped material is also replaced when the rod-shaped supply material is alternately replaced when the length of the rod-shaped supply material is insufficient. At the time of replacement, the amount of material supplied decreases. As described below, the method of the present invention can solve these problems.

  When the material is supplied from both sides of the evaporation crucible 9 with the rod-shaped supply material 32, the scanning range of the supply electron beam 16 arranged outside the scanning range of the evaporation electron beam 18 is substantially equal on both sides. . This makes it possible to supply an equal material from both sides of the evaporation crucible 9.

  When the length of the rod-shaped feed material 32 becomes insufficient as the film formation time elapses, the rod-shaped feed material replacement operation is started. Specifically, the feeding of the bar-shaped supply material on one side is stopped, and the pulling-back operation is performed, for example, by reverse rotation of the feed mechanism, and further replacement with a new bar-shaped supply material and preparation for supply are performed. At that time, as shown in FIG. 7, the irradiation of the supply electron beam 18 on the side where the delivery is stopped is stopped. As a result, it is possible to prevent the generation of the direct hit beam 17 during the material exchange that is directly irradiated to the molten metal of the evaporation crucible 9. Therefore, it is possible to prevent the molten metal temperature from rising rapidly and causing fluctuations in the evaporation rate.

  Further, it is effective to strengthen the supply electron beam 18 on the side where the feeding is continued during the rod-shaped feed material exchange operation. The enhancement of the supply electron beam 18 on the side where the delivery is continued may be an enlargement of the scanning range, and the input power per scanning length of the electron beam is increased by reducing the scanning speed of the supply electron beam scanning range. It may be. The enhancement of the supply electron beam 18 on the side where the delivery is continued is desirably substantially the same as the reduction of the electron beam due to the stop of the irradiation of the supply electron beam on the side where the delivery is stopped. This eliminates the need to rapidly change the output of the electron beam. Depending on the output of the electron beam, the degree of convergence and the evaporation speed of the electron beam may change. By eliminating the need to change the output of the electron beam suddenly as in the present invention, the change in the evaporation speed can be prevented. I can do it.

  During the operation of exchanging the rod-shaped supply material 32, the amount of material supplied from the side where the feeding is continued can be increased by strengthening the supply electron beam 18 to the rod-shaped feeding material on the side where the feeding is continued. As a result, it is possible to prevent a decrease in the material supply amount during the rod-shaped supply material replacement operation and a decrease in the amount of the molten metal in the evaporation crucible, so that it is possible to suppress fluctuations in the evaporation rate due to these fluctuation factors. If necessary, it is also effective to increase the feed speed of the bar-shaped feed material on the side where the feed is continued during the rod-shaped feed material replacement operation.

  After the exchange operation of the rod-shaped feed material is completed, the material is again fed by the rod-shaped feed material from both sides of the evaporation crucible as shown in FIG. As before the start of the rod-shaped supply material exchange operation, the supply electron beam scanning range arranged outside the evaporation electron beam scanning range is substantially equal on both sides. This makes it possible to supply a uniform material from both sides of the evaporation crucible.

An example of the configuration of the entire film forming apparatus is schematically shown in FIG. The vacuum chamber 22 is a pressure-resistant container-like member having an internal space, and an unwinding roller 23, a transport roller 24, a can 25, a take-up roller 26, an evaporation source, a material supply means, a shielding plate 29, and a raw material are provided in the internal space. The gas introduction pipe 30 is accommodated. The unwinding roller 23 is a roller-like member that is provided so as to be rotatable around the axis center in the vertical direction above the can 25. A belt-like long substrate 21 is wound on the surface of the unrolling roller 23, and the closest conveying roller A substrate 21 is supplied toward 24. The conveyance roller 24 is a roller-like member provided so as to be rotatable around an axis, and guides the substrate 21 supplied from the unwinding roller 23 to the can 25 and finally guides it to the winding roller 26. The can 25 is a roller-like member provided so as to be rotatable around an axis, and a cooling means (not shown) is provided therein. For example, a cooling device that performs cooling by circulating cooling water can be used as the cooling means. When the substrate 21 travels on the peripheral surface of the can 25, the material particles flying from the evaporation source react with the raw material gas introduced from the raw material gas introduction pipe 30 as necessary, and are deposited on the surface of the substrate 21. Is formed. The take-up roller 26 is a roller-like member provided so as to be rotationally driven by a driving means (not shown) above the can 25 in the vertical direction, and takes up and stores the substrate 21 on which a thin film is formed.

  The evaporation source is a container-like member which is provided in the vertical direction below the lowest in the vertical direction of the can and has an upper opening in the vertical direction. The evaporation crucible 9 is a specific example, and the evaporation crucible A material is placed inside 9. An electron gun 15 is provided in the vicinity of the evaporation source, and the material inside the evaporation crucible 9 is heated and evaporated by the electron beam 18 from the electron gun. The vapor of the material moves upward in the vertical direction, and reaches the lowermost portion of the can 25 in the vertical direction via the opening 31. Here, a thin film is formed on the surface of the substrate 21.

  The shielding plate 29 limits the region where the material particles flying from the evaporation crucible 9 are in contact with the substrate 21 to the opening 31 only. The source gas introduction pipe 30 is installed as necessary. For example, one end of the source gas introduction pipe 30 is disposed above the evaporation crucible 9 in the vertical direction and the other end is provided in a source gas supply means (not shown) provided outside the vacuum chamber 22. It is a tubular member to be connected and supplies, for example, oxygen or nitrogen to the vapor of the material. Thereby, a thin film mainly composed of oxide, nitride or oxynitride of the material flying from the evaporation source is formed on the surface of the substrate 21. Examples of the source gas supply means include a gas cylinder and a gas generator. The exhaust means 34 is provided outside the vacuum chamber 22 and puts the inside of the vacuum chamber 22 into a reduced pressure state suitable for forming a thin film. For the exhaust means 34, for example, a vacuum pump such as an oil diffusion pump or a cryopump can be used.

  Since the material is supplied to the evaporation source including the evaporation crucible 9 from the material supply means including the rod-shaped supply material 32, the rotation mechanism, the extrusion mechanism, the conveyance guide, the supply beam 16, and the like, A stable thin film can be formed.

  As described above, according to the film forming apparatus 20, the substrate 21 fed from the unwinding roller 23 travels on the peripheral surface of the can 25 via the transport roller 24 and flies from the evaporation source 27 at the opening 31. A thin film is formed on the substrate by receiving supply of steam and, if necessary, oxygen, nitrogen and the like. The substrate 21 is taken up by a take-up roller 26 via another transport roller 24. Thereby, the substrate 21 on which the thin film is formed is obtained.

  The film formation on the substrate does not necessarily have to be along the cylindrical can. For example, by forming an opening portion of the shielding plate in a portion where the substrate runs in a straight line, the film is formed at an oblique incidence. Can also be done. The oblique incidence film formation can form a thin film having a minute space by the self-shading effect, and is effective for forming a high C / N magnetic tape, a battery negative electrode having excellent cycle characteristics, and the like.

  For example, by using copper foil as a substrate and evaporating silicon from the evaporation source and supplying silicon to the evaporation source, a long battery electrode plate and capacitor electrode plate can be obtained.

  For example, the tip of two rod-shaped silicon cast into a rod shape having a diameter of about 50 mm is irradiated with an electron beam of 40 kW in total from an electron gun for both evaporation and supply above the vapor deposition crucible 9 and a speed of 3 g / s in total. A long silicon thin film can be formed by supplying a 90 kW electron beam to the molten metal in the evaporation crucible.

  Also, by using polyethylene terephthalate as a substrate, evaporating cobalt from the evaporation crucible, introducing oxygen gas, and supplying cobalt to the evaporation source by dissolving the rod-shaped cobalt, a long magnetic tape can be obtained. I can do it.

Although the present invention has been specifically described above as the best mode for carrying out the invention, the present invention is not limited to this, and a thin film is formed from an evaporation source scanned with an electron beam toward a substrate. In the manufacturing method of the above, the electron beam that irradiates the evaporation source even when the rod-shaped supply material is exchanged when a plurality of rod-shaped supply materials are directed above the evaporation source and the material is dissolved and supplied by irradiating the electron beam A thin film manufacturing method characterized by having a constant scanning range, a vacuum chamber exhausted by an exhaust means, an evaporation source disposed in the vacuum chamber, and a material supply for supplying the material to the evaporation source Including a film forming apparatus having a function of making the electron beam scanning range irradiated to the evaporation source molten metal constant even when the material supplying means is exchanging the rod-shaped supply material. To do It is. Further, as specific application examples, the electrode plate for electrochemical elements using silicon and the magnetic tape using cobalt have been described. However, the present invention is not limited to this, and capacitors, various sensors, solar Needless to say, the present invention can be applied to various devices that require stable film formation, such as batteries, various optical films, moisture-proof films, and conductive films.

  The film forming method and film forming apparatus of the present invention can ensure evaporative stability at the time of replacement of a feed material in a low-cost material supply system in which a rod-shaped feed material is continuously dissolved and supplied. Stability in film formation can be improved.

  In particular, it is necessary to form a large film over a long period of time, and the equipment can be simplified by emitting a supply electron beam used for melting the feed material and an evaporation electron beam used for film formation from a single electron gun. For example, the present invention is particularly effective.

The figure which shows typically the structure of the continuous supply apparatus which is one of embodiment of this invention, (a) is a top view, (b) is a side view. Schematic diagram showing examples of the shape of the evaporation crucible, (a) to (d) are diagrams showing a planar shape, and (e) to (h) are diagrams showing a longitudinal sectional shape. The figure which shows an example of the chuck roller which also serves as the rotation mechanism, (a) Side view schematic diagram, (b) Cross section schematic view The figure which shows typically the electron beam scanning to the crucible for evaporation of this invention The figure which shows an example of a structure of the whole film-forming apparatus typically The figure which shows typically the electron beam scanning to the crucible for evaporation of this invention The figure which shows typically the electron beam scanning to the crucible for evaporation of this invention The figure which shows typically the electron beam scanning to the crucible for evaporation of this invention The figure which shows typically the electron beam scanning to the crucible for evaporation of a prior art example

Explanation of symbols

2 Chuck 3 Push rod 4 Material supply area 6 Material supply device 9 Evaporating crucible 10 Feed mechanism 11 Chuck roller 12 Cam mechanism 13 Transport guide 14 Droplet 15 Electron gun 16 Supplying electron beam 17 Direct hit beam during material replacement 18 Evaporating electron Beam 19 Shielding plate 20 Deposition device 21 Substrate 22 Vacuum tank 23 Unwinding roller 24 Conveying roller 25 Can 26 Winding roller 29 Shielding plate 30 Raw material gas introduction pipe 31 Opening 32 Rod-shaped supply material 33 Spring mechanism 34 Exhaust means 35 Deposition width 36 Evaporating electron beam scanning range 37 Supply electron beam irradiation position 38 Rotating mechanism 39 Roll for rotating rod-shaped supply material

Claims (5)

In a thin film manufacturing method in which a film is formed from an evaporation source scanned with an electron beam toward a substrate,
The evaporation source upwards only toward insert the rod-shaped feedstock, there is performed a dissolution feed material of the evaporation source by irradiating the electron beam on the bar feed, and the said rod-shaped feedstock On both sides of the evaporation source,
The scanning range of the electron beam is on the rod-shaped feed material and the evaporation source, and the scanning range of the electron beam on the evaporation source is constant,
While preparing and exchanging a plurality of the rod-shaped supply materials arranged on both sides, supplying the melt, shifting the replacement time on both sides, and changing the scanning range of the electron beam at the time of exchanging the rod-shaped supply materials, A method for producing a thin film, characterized by moving to the rod-shaped feed material side during melting. 2. The method for producing a thin film according to claim 1, wherein the rod-shaped supply material rotates about an axis. The method for producing a thin film according to claim 1, wherein a cross-sectional shape of the rod-shaped supply material is substantially circular. An evaporation source that holds an evaporation material for forming a thin film on a substrate, a first and a second material supply mechanism that feeds the evaporation material as a rod-shaped supply material above the evaporation source, and stores them A thin-film manufacturing apparatus including a vacuum chamber evacuated by an evacuation unit, an electron gun for irradiating the evaporation source with an electron beam, and the electron beam control device, wherein the first rod-shaped supply material and the first The two rod-shaped feed materials are sent to both sides across the main evaporation region of the evaporation source scanned with the electron beam by the electron gun and the control device, and the first rod-shaped feed material and the second rod-shaped feed material An exchanging function for melting the tip of the supply material by the electron beam and dropping it on the evaporation source, and for exchanging the first rod-shaped feed material and the second rod-shaped feed material with the rod-shaped feed material for replacement, respectively. And further Thin film manufacturing apparatus characterized by control apparatus has a function of changing the combined scanning range of the electron beam on the timing of the replacement of the bar feed. 5. The apparatus for producing a thin film according to claim 4, further comprising a mechanism for rotating the first and second rod-shaped supply materials about an axis.

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