JPH03101556U - - Google Patents
Info
- Publication number
- JPH03101556U JPH03101556U JP986790U JP986790U JPH03101556U JP H03101556 U JPH03101556 U JP H03101556U JP 986790 U JP986790 U JP 986790U JP 986790 U JP986790 U JP 986790U JP H03101556 U JPH03101556 U JP H03101556U
- Authority
- JP
- Japan
- Prior art keywords
- drain electrode
- source
- layer
- semiconductor layer
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- 238000007743 anodising Methods 0.000 claims 1
- 235000015067 sauces Nutrition 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP986790U JPH03101556U (pt) | 1990-02-05 | 1990-02-05 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP986790U JPH03101556U (pt) | 1990-02-05 | 1990-02-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03101556U true JPH03101556U (pt) | 1991-10-23 |
Family
ID=31513453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP986790U Pending JPH03101556U (pt) | 1990-02-05 | 1990-02-05 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03101556U (pt) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011077966A1 (en) * | 2009-12-25 | 2011-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP2015026859A (ja) * | 2010-02-26 | 2015-02-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2015122510A (ja) * | 2010-02-26 | 2015-07-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2015167247A (ja) * | 2009-12-04 | 2015-09-24 | 株式会社半導体エネルギー研究所 | 半導体素子 |
| JP2015173277A (ja) * | 2009-12-25 | 2015-10-01 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR20150123718A (ko) * | 2014-04-25 | 2015-11-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| JP2017092492A (ja) * | 2009-12-25 | 2017-05-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61147574A (ja) * | 1984-12-21 | 1986-07-05 | Asahi Glass Co Ltd | 薄膜トランジスタ |
-
1990
- 1990-02-05 JP JP986790U patent/JPH03101556U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61147574A (ja) * | 1984-12-21 | 1986-07-05 | Asahi Glass Co Ltd | 薄膜トランジスタ |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015167247A (ja) * | 2009-12-04 | 2015-09-24 | 株式会社半導体エネルギー研究所 | 半導体素子 |
| JP2017092492A (ja) * | 2009-12-25 | 2017-05-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2013030783A (ja) * | 2009-12-25 | 2013-02-07 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP2019195099A (ja) * | 2009-12-25 | 2019-11-07 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9006025B2 (en) | 2009-12-25 | 2015-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| WO2011077966A1 (en) * | 2009-12-25 | 2011-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP2015173277A (ja) * | 2009-12-25 | 2015-10-01 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2018182350A (ja) * | 2009-12-25 | 2018-11-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2018110273A (ja) * | 2009-12-25 | 2018-07-12 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR20180066266A (ko) * | 2009-12-25 | 2018-06-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9543445B2 (en) | 2009-12-25 | 2017-01-10 | Semiconductor Energy Laborartory Co., Ltd. | Semiconductor device with oxide semiconductor layer |
| JP2017017341A (ja) * | 2009-12-25 | 2017-01-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2015122510A (ja) * | 2010-02-26 | 2015-07-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2016171355A (ja) * | 2010-02-26 | 2016-09-23 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2015026859A (ja) * | 2010-02-26 | 2015-02-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2015216367A (ja) * | 2014-04-25 | 2015-12-03 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
| KR20150123718A (ko) * | 2014-04-25 | 2015-11-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |