JPH0298986A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPH0298986A JPH0298986A JP25111888A JP25111888A JPH0298986A JP H0298986 A JPH0298986 A JP H0298986A JP 25111888 A JP25111888 A JP 25111888A JP 25111888 A JP25111888 A JP 25111888A JP H0298986 A JPH0298986 A JP H0298986A
- Authority
- JP
- Japan
- Prior art keywords
- cap
- directions
- optical axis
- lens
- stem
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 230000003287 optical effect Effects 0.000 abstract description 16
- 230000008878 coupling Effects 0.000 abstract description 7
- 238000010168 coupling process Methods 0.000 abstract description 7
- 238000005859 coupling reaction Methods 0.000 abstract description 7
- 239000013307 optical fiber Substances 0.000 abstract description 7
- 238000012544 monitoring process Methods 0.000 abstract description 5
- 238000005476 soldering Methods 0.000 abstract 1
- 238000003466 welding Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は光ファイバーと結合して用いられる光通信用
の半導体レーザ装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor laser device for optical communication that is used in conjunction with an optical fiber.
第3図は従来の半導体レーザ装置を示す断面図である。 FIG. 3 is a sectional view showing a conventional semiconductor laser device.
図において、(1)は半導体レーザ(以下、LDという
)チップ、(2)はLDチップ(1)がボンディングさ
れたヒートシンク、このヒートシンク(2)Fi、LD
チップ(1)の発光点がステム(6)の中心軸に合致す
るようにステA (6)に組立てられている。(4)は
はんだ材(5)を介してLDに光軸が合った状態で固着
されているレンズホルダ、(8)はステム(6)に溶接
された窓ガラス(γ)が設けられたキャップである。In the figure, (1) is a semiconductor laser (hereinafter referred to as LD) chip, (2) is a heat sink to which the LD chip (1) is bonded, and this heat sink (2) is a semiconductor laser (hereinafter referred to as LD) chip.
The chip (1) is assembled on the stem A (6) so that its light emitting point coincides with the central axis of the stem (6). (4) is a lens holder fixed to the LD via solder material (5) with its optical axis aligned, and (8) is a cap with a window glass (γ) welded to the stem (6). It is.
次に動作について説明する。LDに対向して受光装置を
設置しておき、はんだ材(6)を介してヒートシンク(
2)上にレンズホルダ(4)を設置した状態でLDを発
光させ、レンズホルダ(4)をX 、 Y方向に微動さ
せ、受光装置で光軸合せをモニターする。Next, the operation will be explained. A light receiving device is installed facing the LD, and a heat sink (
2) With the lens holder (4) installed above, the LD is made to emit light, the lens holder (4) is slightly moved in the X and Y directions, and the optical axis alignment is monitored by the light receiving device.
光軸の合ったところでレンズホルダ(4)を回定する。Rotate the lens holder (4) where the optical axes match.
固定した状態でヒートアップし、はんだ材(6)によシ
レンズホルダ(4)をヒートシンク(2)に固着する。The lens holder (4) is heated up in the fixed state, and the lens holder (4) is fixed to the heat sink (2) with the solder material (6).
従来の半導体レーザ装置は発止のように構成されている
ので1作業効率が悪く量産性に乏しいこと、レンズのZ
軸方向への位置合せができず、光ファイバとの結合効率
のバラツキが大きいという問題点があった。Conventional semiconductor laser devices are configured like a stopper, which results in poor work efficiency and poor mass production.
There was a problem that alignment in the axial direction could not be performed and the coupling efficiency with the optical fiber varied greatly.
この発明は上記のような問題点を解消するためになされ
たもので、量産性が高く、Z軸方向の光軸合せが可能と
なり、光ファイバとの結合効率のバラツキが小さく、良
好な結合効率が得られる半導体レーザ装置を得ることを
目的とする。This invention was made in order to solve the above-mentioned problems, and it has high mass productivity, enables optical axis alignment in the Z-axis direction, has small variations in coupling efficiency with optical fibers, and has good coupling efficiency. The object of the present invention is to obtain a semiconductor laser device that provides the following.
(゛課題を解決するための手段〕
この発明に係る半導体レーザ装置はキャップ(8)にく
さび形プロジェクションとレンズを装着したものである
。(Means for Solving the Problems) A semiconductor laser device according to the present invention has a cap (8) equipped with a wedge-shaped projection and a lens.
この発明になる半導体レーザ装置は、製造時において、
光軸合せをモニタしながら、X、Y、Zの3方向で位置
の微調整ができるため、光ファイバとの結合効率のバラ
ツキが小さく、量産性が良好である。The semiconductor laser device according to the present invention is manufactured by:
Since the position can be finely adjusted in the three directions of X, Y, and Z while monitoring the optical axis alignment, variations in the coupling efficiency with the optical fiber are small, and mass productivity is good.
以下、この発明を図により説明する。第1図はこの発明
の一実施例による半導体レーザ装置を示す断面図、第2
図は第1図の要部拡大図であシ、次のように構成される
。Hereinafter, this invention will be explained with reference to the drawings. FIG. 1 is a sectional view showing a semiconductor laser device according to an embodiment of the present invention, and FIG.
The figure is an enlarged view of the main part of FIG. 1, and is constructed as follows.
L D壬ツブ(1)がヒートシンク(2)にボンディン
グされ、上記ヒートシンク(2)はLDチップ(1)の
発光点がステム(6)の中心軸に合致するようにステム
(6)に組立てられている。キャップ(8)にはレンズ
(8)とくサグ形プロジェクション(9)が設けられて
いる。The LD tube (1) is bonded to the heat sink (2), and the heat sink (2) is assembled to the stem (6) so that the light emitting point of the LD chip (1) matches the central axis of the stem (6). ing. The cap (8) is provided with a lens (8) and a sag-shaped projection (9).
以上の状態において、LDは発光させながら、キャップ
(8)をX、Y方向に微動させ、レンズ(8)に対向し
て設置された受光装置で光軸合せをモニターする。X、
Y方向での光軸が合った所でキャップ(8)を固定する
。X、Y方向では固定したまま、Z軸方向の光軸合せ状
態をモニターしながら溶接を行なう。この溶接は電流を
調整しながらくさび形プロジェクション(9)の先端部
分より溶かすことによシ行ない、Z軸方向の光軸合せが
完了するまで段階的に溶接をくシ返す。In the above state, the cap (8) is slightly moved in the X and Y directions while the LD emits light, and the optical axis alignment is monitored by a light receiving device installed opposite the lens (8). X,
Fix the cap (8) where the optical axes in the Y direction are aligned. Welding is performed while keeping the beam fixed in the X and Y directions while monitoring the alignment of the optical axis in the Z-axis direction. This welding is performed by melting the tip of the wedge-shaped projection (9) while adjusting the current, and the welding is repeated step by step until the optical axis alignment in the Z-axis direction is completed.
以上のようにこの発明によればキャップにくさび形プロ
ジェクションとレンズを装着しているのでx、y、zの
3方向に光軸合せをすることができ、上記光軸合せはL
D光をモニターしながらキャップを微動させる調整でき
るので、量産性が高く光ファイバとの良好な結合効率が
得られる。As described above, according to the present invention, since the wedge-shaped projection and the lens are attached to the cap, the optical axis can be aligned in the three directions of x, y, and z, and the optical axis can be aligned in the L direction.
Since the cap can be finely adjusted while monitoring the D light, mass productivity is high and good coupling efficiency with the optical fiber can be obtained.
第1図はこの発明の一実施例による半導体レーザ装置を
示す断面図、第2図は第1図の要部拡大図、第3図は従
来の半導体レーザ装置を示す断面図である。
図において、(1)はLDチップ、(2)はヒートシン
ク、(8)はレンズ、(6)はステム、(8)はキャッ
プ、(9)はくさび形プロジェクションリング、叫は溶
接部である。
なお、図中、同一符号は同−又は相当部分を示す。FIG. 1 is a sectional view showing a semiconductor laser device according to an embodiment of the present invention, FIG. 2 is an enlarged view of the main part of FIG. 1, and FIG. 3 is a sectional view showing a conventional semiconductor laser device. In the figure, (1) is the LD chip, (2) is the heat sink, (8) is the lens, (6) is the stem, (8) is the cap, (9) is the wedge-shaped projection ring, and (9) is the welding part. In addition, in the figures, the same reference numerals indicate the same or corresponding parts.
Claims (1)
に組立てられ、上記ステムにキャップが溶接されて構成
される半導体レーザ装置において、該キャップがレンズ
とくさび形プロジェクションリングを装着してなること
を特徴とする半導体レーザ装置。A semiconductor laser device comprising a laser diode chip assembled to a stem via a heat sink and a cap welded to the stem, characterized in that the cap is equipped with a lens and a wedge-shaped projection ring. Device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25111888A JPH0298986A (en) | 1988-10-05 | 1988-10-05 | Semiconductor laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25111888A JPH0298986A (en) | 1988-10-05 | 1988-10-05 | Semiconductor laser device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0298986A true JPH0298986A (en) | 1990-04-11 |
Family
ID=17217926
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP25111888A Pending JPH0298986A (en) | 1988-10-05 | 1988-10-05 | Semiconductor laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0298986A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8253240B2 (en) | 2007-11-29 | 2012-08-28 | Sharp Kabushiki Kaisha | Cap member and semiconductor device employing same |
-
1988
- 1988-10-05 JP JP25111888A patent/JPH0298986A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8253240B2 (en) | 2007-11-29 | 2012-08-28 | Sharp Kabushiki Kaisha | Cap member and semiconductor device employing same |
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