JPH02101787A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPH02101787A JPH02101787A JP25528188A JP25528188A JPH02101787A JP H02101787 A JPH02101787 A JP H02101787A JP 25528188 A JP25528188 A JP 25528188A JP 25528188 A JP25528188 A JP 25528188A JP H02101787 A JPH02101787 A JP H02101787A
- Authority
- JP
- Japan
- Prior art keywords
- cap
- lens
- semiconductor laser
- lower cap
- laser device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 230000003287 optical effect Effects 0.000 abstract description 16
- 230000008878 coupling Effects 0.000 abstract description 7
- 238000010168 coupling process Methods 0.000 abstract description 7
- 238000005859 coupling reaction Methods 0.000 abstract description 7
- 239000013307 optical fiber Substances 0.000 abstract description 6
- 238000001514 detection method Methods 0.000 abstract 1
- 238000005476 soldering Methods 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000005219 brazing Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分計〕
この発明は光ファイバーと結合して用いられる光通信用
の半導体レーザ装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application] The present invention relates to a semiconductor laser device for optical communications that is used in combination with an optical fiber.
第2図は従来の半導体レーザ装置?示す!!’r面図で
ちる。Is Figure 2 a conventional semiconductor laser device? show! ! 'r side drawing.
図において、il+は半導体レーザ(以下、LDという
。)チップ、(21はLDチップ…の発光点がステム(
6)の中心軸に合致するようにステムF81に組立てら
れたヒートシンク、(41ははんだ材tel ’i介し
てLDに光軸が合った状態で固着されているレンズホル
ダ、(8)はステム(6)に溶接された窓ガラス111
が設けられたキャップである。In the figure, il+ is a semiconductor laser (hereinafter referred to as LD) chip, (21 is an LD chip...) The light emitting point of the stem (
(6) is a heat sink assembled to the stem F81 so as to match the central axis of (41 is a lens holder fixed to the LD with its optical axis aligned through solder material tel'i, (8) is a stem ( 6) Window glass 111 welded to
It is a cap with a
次に動作について説明する。Next, the operation will be explained.
LDに対向して受光装置を設置してお轡はんだ材15+
f 介してヒートシンク(2)上〈レンズホルダ41
を設置した状態で、LDを発光させ、レンズホルダ(4
)をX、Y方向に微動させ、受光装置で光軸合せをモニ
ターする。光軸の合ったところでレンズホルダ14)を
固定する。Install the light receiving device opposite the LD and solder the bag 15+
f onto the heat sink (2) through the lens holder 41
With the lens installed, let the LD emit light and attach the lens holder (4).
) in the X and Y directions, and monitor the optical axis alignment using the light receiving device. Fix the lens holder 14) where the optical axes are aligned.
固定した状態でヒートアップしはんだ材+61によりレ
ンズホルダ(4)ヲヒートシンク(21に固着する。The lens holder (4) is heated up in the fixed state and fixed to the heat sink (21) with solder material +61.
従来半導体レーザ装置は以上のように構成されているの
で、作業効率が悪く量産性に乏しいこと、レンズの2軸
方向への位置合せができず光ファイバーとの結合効率の
バラツキが大きいという問題点があった。Conventional semiconductor laser devices are configured as described above, but they suffer from problems such as poor work efficiency and poor mass productivity, and the inability to align the lens in two axes, resulting in large variations in coupling efficiency with optical fibers. there were.
この発明は上記のような問題点を解消するためになされ
たもので、量産性が高く、z軸方向の光軸合せが可能と
な抄、光ファイバーとの結合のバラツキがなくなシ良好
な結合効率が得られる半導体レーザ装置を得ることを目
的とする。This invention was made in order to solve the above-mentioned problems, and it has high mass productivity, a paper that allows optical axis alignment in the z-axis direction, and a method that eliminates variations in coupling with optical fibers and provides good coupling. The purpose is to obtain a semiconductor laser device that can obtain efficiency.
CIIIINを解決するための手段〕
この発明に係る半導体レーザ装置は、キャップにレンズ
を装着し、上記キャップを2分割するとともにそれぞれ
をはめ込んで一体化したものである。Means for Solving CIIIN] A semiconductor laser device according to the present invention has a lens attached to a cap, the cap is divided into two parts, and the two parts are fitted into one piece.
この発明になる半導体レーザ装置は、製造時において光
軸合せをモニターしながらX、Y。The semiconductor laser device according to the present invention monitors the optical axis alignment in X and Y during manufacturing.
2の8方向で位置の微調整ができるため光ファイバーと
の結合効率のバラツキが小さく、量産性が良好である。Since the position can be finely adjusted in eight directions, the variation in coupling efficiency with optical fibers is small and mass production is good.
〔実施例〕
以下、この発明を図により説明する。第1図はこの発明
の一実施例による半導体レーザ装置を示す断面図であり
、次のように構成される。[Example] Hereinafter, the present invention will be explained with reference to the drawings. FIG. 1 is a sectional view showing a semiconductor laser device according to an embodiment of the present invention, and is constructed as follows.
T、+Dチップ…がヒートシンク(21にボンディング
され、ヒートシンク(2)はLDチップIllの発光点
がステムil+の中心軸に合致するようにステム(6)
に組立てられている。T, +D chips... are bonded to the heat sink (21), and the heat sink (2) is attached to the stem (6) so that the light emitting point of the LD chip Ill matches the central axis of the stem ill+.
It is assembled in.
上部キャップ噛にはレンズ(31が設けられている。A lens (31) is provided on the upper cap.
ステム(6)に下部キャップ+5lliかぶせ、上部キ
ャップ11ヲ下部キャップ(i Ic Hめ込む。Cover the stem (6) with the lower cap + 5lli, and insert the upper cap 11 into the lower cap (i Ic H).
このような状態でLDを発光させながら下部キャップi
13υkX、Y方向に微動させ、レンズに対向して設置
された受光装置で光軸合せをモニターする。X、Y方向
での光軸が舎つ乏所で下部キャップδυを固定し溶接す
る。In this state, while making the LD emit light, remove the lower cap i.
The lens is slightly moved in the X and Y directions by 13υk, and the optical axis alignment is monitored using a light receiving device installed opposite the lens. The lower cap δυ is fixed and welded where the optical axis in the X and Y directions is located.
次に、2方向の光軸合せ状態全モニターしながら上部キ
ャップ)1を上下に微動させ、2方向での光軸が合った
所で下部キャップとろう付けし固定する。Next, the upper cap 1 is slightly moved up and down while monitoring the state of alignment of the optical axes in the two directions, and when the optical axes in the two directions are aligned, it is brazed and fixed to the lower cap.
以上のように、この発明によればキャップにレンズ1f
r:装着し、かつ、上記中ヤツプを分割しているので、
X、Y、Zの8方向に光軸合せができ、上記光軸合せは
LD光をモニターしながら上部及び下部キャップを微動
させることができるため、量産性が高く光ファイバーと
の良好な結合効率が得られる。As described above, according to the present invention, the lens 1f is attached to the cap.
r: Since it is installed and the above-mentioned middle yatsupu is divided,
Optical axes can be aligned in eight directions (X, Y, and Z), and the above optical axes can be aligned by slightly moving the upper and lower caps while monitoring the LD light, making it highly suitable for mass production and achieving good coupling efficiency with optical fibers. can get.
第1図はこの発明の一実施例による半導体レーザ装置を
示す断面図、第8図は従来の半導体レーザ装置を示す断
面図である。図中、IIIHLDチップ、(2)はヒー
トシンク、(31はレンズ、14)はレンズホルダ、t
5)ははんだ材、(61はステム、tt+は窓ガラス、
噛は上部キャップ、fillは下部キャップ、(9)は
ろう材部である。
なお、図中、同一符号は1clIl−または相当部分を
示す。FIG. 1 is a sectional view showing a semiconductor laser device according to an embodiment of the present invention, and FIG. 8 is a sectional view showing a conventional semiconductor laser device. In the figure, IIIHLD chip, (2) is a heat sink, (31 is a lens, 14) is a lens holder, t
5) is solder material, (61 is stem, tt+ is window glass,
Bit is the upper cap, fill is the lower cap, and (9) is the brazing metal part. In addition, in the figure, the same code|symbol shows 1clIl- or a corresponding part.
Claims (1)
に組み立てられ、ステムにキャップが溶接されて構成さ
れる半導体レーザ装置において、該キャップを2分割し
下部キャップがステムと溶接され、上部キャップにはレ
ンズが装着され、上記下部キャップと上部キャップとを
嵌合させてなることを特徴とする半導体レーザ装置。In a semiconductor laser device configured by a laser diode chip assembled to a stem via a heat sink and a cap welded to the stem, the cap is divided into two parts, a lower cap is welded to the stem, and a lens is attached to the upper cap. , a semiconductor laser device characterized in that the lower cap and the upper cap are fitted together.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25528188A JPH02101787A (en) | 1988-10-11 | 1988-10-11 | Semiconductor laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25528188A JPH02101787A (en) | 1988-10-11 | 1988-10-11 | Semiconductor laser device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02101787A true JPH02101787A (en) | 1990-04-13 |
Family
ID=17276574
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP25528188A Pending JPH02101787A (en) | 1988-10-11 | 1988-10-11 | Semiconductor laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02101787A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0412674U (en) * | 1990-05-23 | 1992-01-31 | ||
JPH05218578A (en) * | 1991-10-31 | 1993-08-27 | Internatl Business Mach Corp <Ibm> | Laser-diode-assembly |
-
1988
- 1988-10-11 JP JP25528188A patent/JPH02101787A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0412674U (en) * | 1990-05-23 | 1992-01-31 | ||
JPH05218578A (en) * | 1991-10-31 | 1993-08-27 | Internatl Business Mach Corp <Ibm> | Laser-diode-assembly |
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