JPH0298636U - - Google Patents
Info
- Publication number
- JPH0298636U JPH0298636U JP5365989U JP5365989U JPH0298636U JP H0298636 U JPH0298636 U JP H0298636U JP 5365989 U JP5365989 U JP 5365989U JP 5365989 U JP5365989 U JP 5365989U JP H0298636 U JPH0298636 U JP H0298636U
- Authority
- JP
- Japan
- Prior art keywords
- inner lead
- die pad
- shape
- crimped
- metal wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 2
- 239000008188 pellet Substances 0.000 claims description 2
- 229910001111 Fine metal Inorganic materials 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
Landscapes
- Wire Bonding (AREA)
Description
第１図ａ，ｂはこの考案の一実施例を示す要部
の平面図および側面図、第２図ａ，ｂは従来のイ
ンナリードのワイヤボンデイング状態を示す要部
の平面図および側面図である。
図において、１は半導体ペレツト、２は電極、
３は金属細線、５はインナリード、５Ａは辺、６
は圧着部、７はダイパツド、７Ａ，７Ｂは辺、８
は延長部、１０は凹状である。なお、各図中の同
一符号は同一または相当部分を示す。
Figures 1a and b are a plan view and side view of the main part showing an embodiment of this invention, and Figures 2a and b are a plan view and side view of the main part showing the conventional wire bonding state of the inner lead. be. In the figure, 1 is a semiconductor pellet, 2 is an electrode,
3 is a thin metal wire, 5 is an inner lead, 5A is a side, 6
is the crimp part, 7 is the die pad, 7A, 7B are the sides, 8
10 is an extension, and 10 is a concave portion. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (1)
の電極とインナリードとの間に金属細線が圧着接
続される半導体装置用リードフレームのインナリ
ードにおいて、前記インナーリードの先端が前記
ダイパツドの辺に対向して平行に延ばされており
、かつ前記ダイパツドの上記辺から突出しないよ
うに構成されるとともに、前記金属細線部分が圧
着接続される部分の前記インナリードの形状を上
記辺に対して直交する方向に延長部を形成し、さ
らに前記インナーリードの幅広の部分に対向する
前記ダイパツドの辺の一部を凹状に形成したこと
を特徴とする半導体装置。 In the inner lead of a lead frame for a semiconductor device in which a fine metal wire is crimped and connected between the electrode of a semiconductor pellet die-bonded to the die pad and the inner lead, the tip of the inner lead extends parallel to the side of the die pad. The shape of the inner lead at the portion to which the thin metal wire portion is crimped and connected is configured such that the shape of the inner lead is extended in a direction perpendicular to the side. A semiconductor device characterized in that a part of the side of the die pad facing the wide part of the inner lead is formed in a concave shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5365989U JPH0298636U (en) | 1989-05-10 | 1989-05-10 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5365989U JPH0298636U (en) | 1989-05-10 | 1989-05-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0298636U true JPH0298636U (en) | 1990-08-06 |
Family
ID=31279626
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5365989U Pending JPH0298636U (en) | 1989-05-10 | 1989-05-10 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0298636U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5721847A (en) * | 1980-07-14 | 1982-02-04 | Nec Corp | Semiconductor device |
| JPS5887837A (en) * | 1981-11-20 | 1983-05-25 | Hitachi Ltd | Semiconductor device |
-
1989
- 1989-05-10 JP JP5365989U patent/JPH0298636U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5721847A (en) * | 1980-07-14 | 1982-02-04 | Nec Corp | Semiconductor device |
| JPS5887837A (en) * | 1981-11-20 | 1983-05-25 | Hitachi Ltd | Semiconductor device |