JPH029844U - - Google Patents
Info
- Publication number
- JPH029844U JPH029844U JP8861188U JP8861188U JPH029844U JP H029844 U JPH029844 U JP H029844U JP 8861188 U JP8861188 U JP 8861188U JP 8861188 U JP8861188 U JP 8861188U JP H029844 U JPH029844 U JP H029844U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- diaphragm
- temperature characteristics
- detection element
- resistive pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 3
Landscapes
- Measuring Fluid Pressure (AREA)
Description
第１図は本考案の一実施例の要部構成説明図、
第２図は従来より一般に使用されている従来例の
構成説明図、第３図は第２図の要部構成説明図で
ある。
１…半導体基板、２…ダイアフラム、３…抵抗
式圧力検出素子、４１，４２…入力端子、４３，
４４…出力端子、５…ツエナーダイオード、Ｒ１
，Ｒ２，Ｒ３，Ｒ４…ピエゾ抵抗素子。
FIG. 1 is an explanatory diagram of the main part configuration of an embodiment of the present invention,
FIG. 2 is a diagram illustrating the configuration of a conventional example that has been generally used, and FIG. 3 is a diagram illustrating the configuration of the main part of FIG. 2. DESCRIPTION OF SYMBOLS 1... Semiconductor substrate, 2... Diaphragm, 3... Resistance type pressure detection element, 41, 42... Input terminal, 43,
44... Output terminal, 5... Zener diode, R1
, R 2 , R 3 , R 4 ... piezoresistive elements.
Claims (1)
イアフラムに設けられた定電圧駆動の抵抗式圧力
検出素子とを具備する半導体圧力センサにおいて
、 別基板に形成され前記抵抗式圧力検出素子の入
力端に並列に接続され該抵抗式圧力検出素子の温
度特性を補償する温度特性を有するように構成さ
れたツエナーダイオードを具備したことを特徴と
する半導体圧力センサ。[Claims for Utility Model Registration] A semiconductor pressure sensor comprising a diaphragm formed on a semiconductor substrate and a constant-voltage driven resistive pressure sensing element provided on the diaphragm, wherein the resistive pressure sensing element is formed on a separate substrate. A semiconductor pressure sensor comprising a Zener diode connected in parallel to an input end of a detection element and configured to have temperature characteristics that compensate for the temperature characteristics of the resistive pressure detection element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8861188U JPH029844U (en) | 1988-07-04 | 1988-07-04 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8861188U JPH029844U (en) | 1988-07-04 | 1988-07-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH029844U true JPH029844U (en) | 1990-01-22 |
Family
ID=31313171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8861188U Pending JPH029844U (en) | 1988-07-04 | 1988-07-04 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH029844U (en) |
-
1988
- 1988-07-04 JP JP8861188U patent/JPH029844U/ja active Pending
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