JPH0298333U - - Google Patents
Info
- Publication number
- JPH0298333U JPH0298333U JP663289U JP663289U JPH0298333U JP H0298333 U JPH0298333 U JP H0298333U JP 663289 U JP663289 U JP 663289U JP 663289 U JP663289 U JP 663289U JP H0298333 U JPH0298333 U JP H0298333U
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film transistor
- pixel electrode
- liquid crystal
- crystal display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011159 matrix material Substances 0.000 claims description 6
- 239000004973 liquid crystal related substance Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims 3
- 238000010586 diagram Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Description
第１図及び第２図はそれぞれこの考案の第１及
び第２実施例の説明に供する図であつて、透明基
板上に形成されたＴＦＴ、画素電極、ゲートバス
及びソースバスより成る要部の平面図、第３図は
ＴＦＴスイツチマトリツクス液晶表示素子の一部
の断面図、第４図はＴＦＴスイツチマトリツクス
液晶表示素子の等価回路図、第５図は従来のＴＦ
Ｔスイツチマトリツクス液晶表示素子において透
明基板上に形成されたＴＦＴ、画素電極、ゲート
バス及びソースバスより成る要部の平面図、第６
図は第５図のＡ―Ａ断面図、第７図は第５図のＢ
―Ｂ断面図である。
FIG. 1 and FIG. 2 are diagrams for explaining the first and second embodiments of this invention, respectively, and show the main parts formed on a transparent substrate, including a TFT, a pixel electrode, a gate bus, and a source bus. 3 is a cross-sectional view of a part of a TFT switch matrix liquid crystal display element, FIG. 4 is an equivalent circuit diagram of a TFT switch matrix liquid crystal display element, and FIG. 5 is a conventional TF
FIG. 6 is a plan view of the main parts of a T-switch matrix liquid crystal display device, which includes a TFT formed on a transparent substrate, a pixel electrode, a gate bus, and a source bus; FIG.
The figure is a sectional view taken along line A-A in Figure 5, and Figure 7 is B in Figure 5.
-B sectional view.
Claims (1)
ランジスタのドレイン電極と、そのドレイン電極
と電気的に接続される画素電極との間に、橋絡部
を除いてそれら両電極を分割するスリツトが設け
られていることを特徴とする薄膜トランジスタ・
スイツチマトリツクス液晶表示素子。 (2) 上記画素電極の端部が隣接するゲートバス
と重なるようにゲートバスの中間位置まで延長さ
れて、付加容量部が形成され、 その付加容量部の近傍の上記画素電極に、橋絡
部を除いてスリツトが、上記隣接するゲートバス
の端縁に沿つて形成されている請求項(1)記載の
薄膜トランジスタ・スイツチマトリツクス液晶表
示素子。[Claims for Utility Model Registration] (1) Between the drain electrode of each thin film transistor arranged in a matrix and the pixel electrode electrically connected to the drain electrode, both A thin film transistor characterized by having a slit that divides the electrode.
Switch matrix liquid crystal display element. (2) An additional capacitance section is formed by extending the end of the pixel electrode to an intermediate position of the gate bus so that it overlaps with an adjacent gate bus, and a bridging section is provided to the pixel electrode near the additional capacitance section. 2. The thin film transistor/switch matrix liquid crystal display element according to claim 1, wherein the slits are formed along edges of the adjacent gate buses except for the slits.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP663289U JPH0298333U (en) | 1989-01-23 | 1989-01-23 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP663289U JPH0298333U (en) | 1989-01-23 | 1989-01-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0298333U true JPH0298333U (en) | 1990-08-06 |
Family
ID=31210967
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP663289U Pending JPH0298333U (en) | 1989-01-23 | 1989-01-23 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0298333U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59119322A (en) * | 1982-12-27 | 1984-07-10 | Seiko Epson Corp | Active matrix liquid-crystal display device |
| JPS63225229A (en) * | 1987-03-16 | 1988-09-20 | Matsushita Electric Ind Co Ltd | Thin-film transistor array |
-
1989
- 1989-01-23 JP JP663289U patent/JPH0298333U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59119322A (en) * | 1982-12-27 | 1984-07-10 | Seiko Epson Corp | Active matrix liquid-crystal display device |
| JPS63225229A (en) * | 1987-03-16 | 1988-09-20 | Matsushita Electric Ind Co Ltd | Thin-film transistor array |
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