JPH0296739U - - Google Patents
Info
- Publication number
- JPH0296739U JPH0296739U JP1989005325U JP532589U JPH0296739U JP H0296739 U JPH0296739 U JP H0296739U JP 1989005325 U JP1989005325 U JP 1989005325U JP 532589 U JP532589 U JP 532589U JP H0296739 U JPH0296739 U JP H0296739U
- Authority
- JP
- Japan
- Prior art keywords
- chip
- translucent alumina
- alumina cap
- lead frame
- ceramic substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/163—Connection portion, e.g. seal
Landscapes
- Non-Volatile Memory (AREA)
Description
第１図乃至第４図はそれぞれ本考案の実施例を
示す縦断面図であり、第５図は従来のメモリＩＣ
を示す縦断面図である。 尚、図において、１１，５１……ＩＣチツプ、
１２，５２……セラミツク基板、１３，５３……
ポリイミド樹脂、１４，５４……Ａｌワイヤ、１
５，５５……リードフレーム、１６，２６，３６
，４６，５６……透光性アルミナキヤツプ、１７
，５７……低融点硝子、１８，５８……封止界面
、１９，２９……溝、３９，４９……粗面。
示す縦断面図であり、第５図は従来のメモリＩＣ
を示す縦断面図である。 尚、図において、１１，５１……ＩＣチツプ、
１２，５２……セラミツク基板、１３，５３……
ポリイミド樹脂、１４，５４……Ａｌワイヤ、１
５，５５……リードフレーム、１６，２６，３６
，４６，５６……透光性アルミナキヤツプ、１７
，５７……低融点硝子、１８，５８……封止界面
、１９，２９……溝、３９，４９……粗面。
Claims (1)
- 【実用新案登録請求の範囲】 (1) ＩＣチツプを固着したセラミツク基板と、
ＩＣチツプの電極を外部に導出するリードフレー
ムと、ＩＣチツプを覆う透光性アルミナキヤツプ
の三者を低融点硝子で気密封止したＩＣにおいて
、前記透光性アルミナキヤツプの封止面に溝を設
けたことを特徴とする紫外線消去型メモリＩＣ。 (2) ＩＣチツプを固着したセラミツク基板と、
ＩＣチツプの電極を外部に導出するリードフレー
ムと、ＩＣチツプを覆う透光性アルミナキヤツプ
の三者を低融点硝子で気密封止したＩＣにおいて
、前記透光性アルミナキヤツプの封止面が紫外線
を透過する個所の面よりも粗面になつていること
を特徴とする紫外線消去型メモリＩＣ。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989005325U JPH0296739U (ja) | 1989-01-19 | 1989-01-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989005325U JPH0296739U (ja) | 1989-01-19 | 1989-01-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0296739U true JPH0296739U (ja) | 1990-08-01 |
Family
ID=31208604
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989005325U Pending JPH0296739U (ja) | 1989-01-19 | 1989-01-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0296739U (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03224251A (ja) * | 1989-12-19 | 1991-10-03 | Fujitsu Ltd | 半導体装置 |
-
1989
- 1989-01-19 JP JP1989005325U patent/JPH0296739U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03224251A (ja) * | 1989-12-19 | 1991-10-03 | Fujitsu Ltd | 半導体装置 |
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