JPH0294487A - Solid laser device - Google Patents
Solid laser deviceInfo
- Publication number
- JPH0294487A JPH0294487A JP63246990A JP24699088A JPH0294487A JP H0294487 A JPH0294487 A JP H0294487A JP 63246990 A JP63246990 A JP 63246990A JP 24699088 A JP24699088 A JP 24699088A JP H0294487 A JPH0294487 A JP H0294487A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- solid
- state laser
- excitation
- gsgg
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007787 solid Substances 0.000 title abstract description 4
- 230000005284 excitation Effects 0.000 claims abstract description 27
- 230000010355 oscillation Effects 0.000 claims abstract description 15
- 239000000919 ceramic Substances 0.000 claims abstract description 8
- 230000001235 sensitizing effect Effects 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 5
- 238000005086 pumping Methods 0.000 claims description 5
- 238000010521 absorption reaction Methods 0.000 claims description 4
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 abstract description 6
- 238000009792 diffusion process Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 description 7
- 238000000862 absorption spectrum Methods 0.000 description 6
- 239000010979 ruby Substances 0.000 description 6
- 229910001750 ruby Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- 229910052724 xenon Inorganic materials 0.000 description 4
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0627—Construction or shape of active medium the resonator being monolithic, e.g. microlaser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/0915—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light
- H01S3/092—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of flash lamp
- H01S3/093—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of flash lamp focusing or directing the excitation energy into the active medium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
- H01S3/082—Construction or shape of optical resonators or components thereof comprising three or more reflectors defining a plurality of resonators, e.g. for mode selection or suppression
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094038—End pumping
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Laser Beam Processing (AREA)
- Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
イ０発明の目的
〔産業上の利用分野〕
本発明は、レーザ加工などに用いられる固体レーザ装置
のレーザヘッドに関するものである。DETAILED DESCRIPTION OF THE INVENTION Object of the Invention [Field of Industrial Application] The present invention relates to a laser head of a solid-state laser device used for laser processing and the like.
従来、ランプ励起を用いた固体レーザ装置としては、第
４図に示す様に、楕円円筒型の集光器１１と固体レーザ
ロッド１３、励起ランプ１２、外部の反射ミラー１４、
出射ミラー１５から構成されていた。Conventionally, as shown in FIG. 4, a solid-state laser device using lamp excitation includes an elliptical cylindrical condenser 11, a solid-state laser rod 13, an excitation lamp 12, an external reflection mirror 14,
It consisted of an exit mirror 15.
励起ランプ１２の光は、集光器１１によって固体レーザ
ロッドの中心部に集光され、反射ミラー１４と出射ミラ
ー１５との間で往復増幅されレーザ発振する。The light from the excitation lamp 12 is focused on the center of the solid-state laser rod by the condenser 11, and is amplified back and forth between the reflection mirror 14 and the output mirror 15, and oscillates as a laser.
固体レーザロッド（例えばＮｄ−ＹＡＧレーザロッド）
の吸収スペクトルは線幅の狭い線状スペクトルを示し、
それに励起光の波長を合わせることが難しい。第２図に
固体レーザの吸収スペクトルと第３図にキセノンフラッ
シュランプの発光スペクトルを示す。第２図の（ａ）は
、Ｎｄ−ＹＡＧの吸収スペクトルで、（ｂ）は増感イオ
ンを含むＮｄ、 Ｃｒ−ＧＳＧＧレーザの吸収スペクト
ルである。これらの吸収スペクトルの面積を３００ｎｍ
から９００ｎｍまでの間で求めた場合、Ｎｄ。Solid state laser rod (e.g. Nd-YAG laser rod)
The absorption spectrum of shows a linear spectrum with a narrow linewidth,
It is difficult to match the wavelength of the excitation light to this. FIG. 2 shows the absorption spectrum of the solid-state laser, and FIG. 3 shows the emission spectrum of the xenon flash lamp. FIG. 2(a) is the absorption spectrum of Nd-YAG, and FIG. 2(b) is the absorption spectrum of Nd, Cr-GSGG laser containing sensitizing ions. The area of these absorption spectra is 300 nm
Nd when measured between 900 nm and 900 nm.
Ｃｒ−ＧＳＧＧは、Ｎｄ−ＹＡＧに比べ、６倍もの吸収
量を有することが認められた。しかるに、レーザ発振さ
せた時には、３倍のレーザ発振効率が得られる。しかし
、Ｎｄ、 Ｃｒ−ＧＳＧＧのような多元素添加単結晶は
、熱レンズ効果が大きいため、ロッド中心に励起光を集
光する方法では良質のビーム光が得られない。It was found that Cr-GSGG has an absorption amount six times that of Nd-YAG. However, when laser oscillation is performed, three times the laser oscillation efficiency can be obtained. However, since multi-element doped single crystals such as Nd and Cr-GSGG have a large thermal lens effect, a high quality beam cannot be obtained by focusing the excitation light at the center of the rod.
集光器はＮｄ−ＹＡＧの場合、安定なＡｕメツキ膜を用
いるが、６００１以下の波長領域で高反射率を必要とす
るＮｄ、 Ｃｒ−ＧＳＧＧではＡｇが有効であるが、Ａ
ｇ膜は耐久性がない欠点がある。In the case of Nd-YAG, a stable Au plating film is used for the concentrator, but Ag is effective for Nd and Cr-GSGG, which require high reflectance in the wavelength region of 6001 or less, but A
G-membrane has the disadvantage of lack of durability.
本発明の課題は、これらの欠点を補う高いレーザ発振効
率でビーム質の良いレーザ光を得ることにある。An object of the present invention is to obtain a laser beam with high beam quality and high laser oscillation efficiency that compensates for these drawbacks.
口０発明の構成
〔課題を解決するための手段〕
本発明は、円錐型のセラミックス集光器（拡散型集光器
）の一方に励起用ランプを設置し、もう一方に多元素添
加単結晶と一元素添加単結晶を直列に配置したことを特
徴するビーム質と発振効率の高い固体レーザ装置の提供
である。Configuration of the Invention [Means for Solving the Problems] The present invention is characterized in that an excitation lamp is installed on one side of a conical ceramic condenser (diffusion type condenser), and a multi-element doped single crystal is installed on the other side. The object of the present invention is to provide a solid-state laser device with high beam quality and oscillation efficiency, which is characterized by arranging a single crystal doped with one element in series.
即ち、■、レーザロッドと励起用ランプ、及び拡散型集
光器から成るレーザ発振器に於て、円錐状のセラミック
スを用いた拡散型集光器の一方に励起用ランプを設置し
、もう一方に直接ミラーコートされた固体レーザロッド
を配置し、エンドボンピングによってレーザ発振させる
ことを特徴とする固体レーザ装置。Namely, in a laser oscillator consisting of a laser rod, an excitation lamp, and a diffused condenser, the excitation lamp is installed on one side of the diffused condenser made of conical ceramics, and the excitation lamp is installed on the other side. A solid-state laser device characterized by arranging a directly mirror-coated solid-state laser rod and causing laser oscillation by end bombing.
２、増感作用によってレーザ媒質の吸収波長以外のポン
ピング光を有効に励起エネルギーに変換するための増感
イオンを含む多元素添加固体レーザロッドを数種類直列
に配置し、エンドボンピングすることを特徴とする固体
レーザ装置。2. It is characterized by arranging several kinds of multi-element-doped solid-state laser rods containing sensitizing ions in series and performing end bombing to effectively convert pumping light at a wavelength other than the absorption wavelength of the laser medium into excitation energy by sensitizing action. A solid-state laser device.
３、前記の組合せとして、異なる発振波長を示す固体レ
ーザロッドを数種類組み合わせることを特徴とする固体
レーザ装置である。3. The solid-state laser device is characterized in that, as the above-mentioned combination, several types of solid-state laser rods exhibiting different oscillation wavelengths are combined.
安定な比校的反射効率の高いＢａＳＯ４集光器を用い、
且つ増感イオンを含む結晶をレーザロッドとして組合せ
使用することにより、良質のいくつかのレーザ光を高効
率に得る装置が出来る。Using a BaSO4 condenser with stable and high specific reflection efficiency,
In addition, by using a crystal containing sensitizing ions in combination as a laser rod, a device that can obtain high-quality laser beams with high efficiency can be created.
実施例−１ 本発明の実施例について図面を参照して説明する。 Example-1 Embodiments of the present invention will be described with reference to the drawings.
第１図は、本発明の実施例を示す固体レーザ装置の発振
器の断面図である。球型キセノンフラッシュランプ２か
ら発した光は、 Ｂａ５Ｏａセラミツクスから成る拡散
型反射板ｌで散乱反射して増感イオンを含むＮｄ、 Ｃ
ｒ−ＧＳＧＧ ４に入射する。ＢａＳＯ４粉末は、反射
率が比校的大きく、粉末内で乱反射が起こるため、Ｂａ
ＳＯ４セラミックス板では高い反射率が得られる。Ｂａ
ＳＯ４セラミックスの拡散型反射板の集光器の効率は、
Ａｇより２０％劣るが、Ａｕの１．５倍の効率が得られ
、又、Ａｇのように変質することがないので半永久的に
使用出来る。しかも光が拡散するので、Ｎｄ、 Ｃｒ−
ＧＳＧＧ ４の断面内は均一に励起され、径方向での温
度分布が出来ない。従って、熱レンズ効果が起こらない
。又、長さ方向での励起光の密度分布があっても、１０
０％反射コート面７と、５０％反射コート面６の間で往
復するため、励起光の密度分布によるレーザ発振への影
響はない。Ｎｄ、 Ｃｒ−ＧＳＧＧでは、波長６００ｒ
ｏ＋＋以下の励起光を十分に吸収し、且つ、６００ｎｍ
以上の励起光を一部吸収し、有効にレーザ発振する。Ｎ
ｄ、 Ｃｒ−ＧＳＧＧを透過した波長６００ｎｍ以上の
励起光がＮｄ−ＹＡＧ ５を励起し、１００％反射コー
ト面７と５０％反射コート面６間で往復増幅され、レー
ザ発振する。FIG. 1 is a cross-sectional view of an oscillator of a solid-state laser device showing an embodiment of the present invention. The light emitted from the spherical xenon flash lamp 2 is scattered and reflected by the diffuse reflector 1 made of Ba5Oa ceramics, and is reflected by the Nd and C containing sensitizing ions.
input to r-GSGG 4. BaSO4 powder has a relatively high reflectance and diffuse reflection occurs within the powder.
A high reflectance can be obtained with the SO4 ceramic plate. Ba
The efficiency of the SO4 ceramic diffuse reflector concentrator is:
Although it is 20% inferior to Ag, it is 1.5 times more efficient than Au, and unlike Ag, it does not deteriorate, so it can be used semi-permanently. Moreover, since the light is diffused, Nd, Cr-
The cross section of GSGG 4 is excited uniformly, and there is no temperature distribution in the radial direction. Therefore, no thermal lens effect occurs. Also, even if there is a density distribution of excitation light in the length direction, 10
Since the excitation light goes back and forth between the 0% reflection coated surface 7 and the 50% reflection coated surface 6, the density distribution of the excitation light does not affect laser oscillation. For Nd, Cr-GSGG, the wavelength is 600r.
Sufficiently absorbs excitation light below o++ and 600 nm
Part of the above excitation light is absorbed and the laser oscillates effectively. N
d. The excitation light having a wavelength of 600 nm or more that has passed through the Cr-GSGG excites the Nd-YAG 5, is amplified back and forth between the 100% reflection coated surface 7 and the 50% reflection coated surface 6, and oscillates as a laser.
本実施例では、多元素添加単結晶の母体材と一元素添加
単結晶の母体の材質が異なるため、違った２つのレーザ
光が出てくる。この場合、Ｎｄ−ＹＡＧは１．０６４１
ｔｔ、 ｒｔｒで発振し、Ｎｄ、 Ｃｒ−ＧＳＧＧで
は１．０６１２ ａ ｍで発振する。Ｎｄ−ＹＡＧに達
する励起光は、はとんどが波長６００ｎｎｉ以上の光で
あるため、Ｎｄ−ＹＡＧ内での発熱がほとんど無く、良
質のレーザ光がｔｔ＋られる。In this embodiment, since the base material of the multi-element-doped single crystal and the base material of the single-element-doped single crystal are different, two different laser beams are emitted. In this case, Nd-YAG is 1.0641
It oscillates at tt and rtr, and oscillates at 1.0612 am for Nd and Cr-GSGG. Since most of the excitation light that reaches the Nd-YAG has a wavelength of 600 nni or more, there is almost no heat generation within the Nd-YAG, and high-quality laser light is produced at tt+.
実施例−２
次に、第１図に於て、Ｎｄ、 Ｃｒ−ＧＳＧＧ４の代わ
りにＣｒを添加したルビーレーザロッドを置き、Ｎｄ−
ＹＡＧ５の代わりにＹＡＧロッドを配置した場合につい
て説明する。Example-2 Next, in FIG. 1, a ruby laser rod doped with Cr was placed instead of Nd and Cr-GSGG4, and
A case where a YAG rod is arranged instead of YAG5 will be explained.
ルビーレーザの光吸収は、４００止と５５０止付近に幅
の広い吸収ピークを有するだけで、６００ｎｍ以上での
光吸収がほとんどない。Ｎｄ−ＹＡＧに於ては、６００
ｎｍ以上の励起光だけが有効にレーザ発振に寄与するが
、６００ｎｍ以下の励起光のほとんどはＮｄ−ＹＡＧ内
で熱エネルギーに変換されるため、熱レンズ効果を大き
くし、レーザビームの拡がり角度を大きくする働きがあ
る。第４図のように配置した場合、Ｎｄ−ＹＡＧに有害
な励起光でルビーレーザ発振させ、残りの励起光でＮｄ
−ＹＡＧ励起してレーザ発振させるために、ビーム拡が
り角度の小さい良質のＹＡＧレーザ光（１，０６μｍ）
と、可視領域のルビーレーザ光（０，６９μｍ）が同時
に得られる。ＹＡＧレーザ光は加工用レーザ光源として
、ルビーレーザ光は光学系の調整用として用いることが
出来る。又、Ｑスイッチなどを用いた大出力レーザでは
、可視光に吸収を有する物質のレーザ加工に有効に用い
ることが出来る。The light absorption of a ruby laser only has broad absorption peaks near 400 and 550 stops, and there is almost no light absorption at 600 nm or more. For Nd-YAG, 600
Only the excitation light of nm or more effectively contributes to laser oscillation, but most of the excitation light of 600 nm or less is converted into thermal energy within Nd-YAG, which increases the thermal lens effect and reduces the spread angle of the laser beam. It has the function of making it bigger. When arranged as shown in Figure 4, ruby laser oscillation is performed using excitation light that is harmful to Nd-YAG, and the remaining excitation light is used to
- High-quality YAG laser light (1.06 μm) with a small beam divergence angle to excite YAG and cause laser oscillation.
Ruby laser light (0.69 μm) in the visible region can be obtained at the same time. YAG laser light can be used as a laser light source for processing, and ruby laser light can be used for adjusting optical systems. Furthermore, a high-output laser using a Q-switch or the like can be effectively used for laser processing of substances that absorb visible light.
ハ０発明の効果
以上述べたように、本発明を用いたレーザ装置では、レ
ーザ発振効率が良く、レーザビームの質が良いレーザ光
が得られる。又、エンドポンピング方式であるため、装
置の小型化が可能であり、安価に作ることが出来る。多
元素添加単結晶の代わりにルビーレーザロッド等を置く
ことによって、可視と赤外で同時にレーザ発振するレー
ザ装置を作ることも可能で、赤外で吸収を持たない物質
に可視光を照射させながら、赤外光を照射してレーザ加
工する分野での応用が可能である。Effects of the Invention As described above, in the laser device using the present invention, a laser beam with good laser oscillation efficiency and good quality laser beam can be obtained. Furthermore, since it is an end pumping method, the device can be made smaller and can be manufactured at low cost. By placing a ruby laser rod etc. in place of a multi-element-doped single crystal, it is possible to create a laser device that oscillates in the visible and infrared at the same time. , it can be applied in the field of laser processing by irradiating infrared light.
第１図は、本発明による固体レーザ装置の発振器の断面
図。
第２図は、固体レーザロッドの吸収スペクトルを示し、
（ａ）はＮｄ−ＹＡＧの透過率を示し、（ｂ）はＮｄ、
Ｃｒ−ＧＳＧＧの透過率を示す。
第３図は、キセノンフラッシュランプの発光スペクトル
を示す。
第４図は、従来の固体レーザ装置の発振器の断面図であ
る。
１・・・拡散型反射板、２・・・球状キセノンフラッシ
ュランプ、３・・・ガラス管、４−・−Ｎｄ、 Ｃｒ−
ＧＳＧＧ、５・Ｎｄ−ＹＡＧ、６・・・５０％反射コー
ト膜、７・・・１００％反射コート膜、１１・・・集光
器、１２・・・励起ランプ、１３・・・固体レーザロッ
ド、１４・・・反射ミラー １５・・・出射ミラー、ａ
・・・Ｎｄ−ＹＡＧの透過率、ｂ・・・Ｎｄ、 Ｃｒ−
ＧＳＧＧの透過率。
第７図
第２図
特許出願人 東北金属工業株式会社
ス〔μ〕FIG. 1 is a cross-sectional view of an oscillator of a solid-state laser device according to the present invention. Figure 2 shows the absorption spectrum of the solid-state laser rod,
(a) shows the transmittance of Nd-YAG, (b) shows the transmittance of Nd,
The transmittance of Cr-GSGG is shown. FIG. 3 shows the emission spectrum of a xenon flash lamp. FIG. 4 is a cross-sectional view of an oscillator of a conventional solid-state laser device. 1... Diffuse reflector, 2... Spherical xenon flash lamp, 3... Glass tube, 4-...-Nd, Cr-
GSGG, 5.Nd-YAG, 6...50% reflective coating film, 7...100% reflective coating film, 11... Condenser, 12... Excitation lamp, 13... Solid laser rod , 14... Reflection mirror 15... Output mirror, a
...Transmittance of Nd-YAG, b...Nd, Cr-
Transmittance of GSGG. Figure 7 Figure 2 Patent applicant: Tohoku Metal Industry Co., Ltd. [μ]
Claims (1)
ら成るレーザ発振器に於て、円錐状のセラミックスを用
いた拡散型集光器の一方に励起用ランプを設置し、もう
一方に直接ミラーコートされた固体レーザロッドを配置
し、エンドポンピングによってレーザ発振させることを
特徴とする固体レーザ装置。 ２、請求項１記載に於て、増感作用によってレーザ媒質
の吸収波長以外のポンピング光を有効に励起エネルギー
に変換するための増感イオンを含む多元素添加固体レー
ザロッドを数種類直列に配置し、エンドポンピングする
ことを特徴とする固体レーザ装置。 ３、請求項１記載、及び請求項２記載の組合せとして、
異なる発振波長を示す固体レーザロッドを数種類組み合
わせることを特徴とする固体レーザ装置。[Claims] 1. In a laser oscillator consisting of a laser rod, an excitation lamp, and a diffused condenser, the excitation lamp is installed on one side of the diffused condenser made of conical ceramics. A solid-state laser device characterized in that a mirror-coated solid-state laser rod is placed directly on the other end, and laser oscillation is caused by end pumping. 2. In claim 1, several types of multi-element-doped solid-state laser rods containing sensitizing ions are arranged in series to effectively convert pumping light at a wavelength other than the absorption wavelength of the laser medium into excitation energy by sensitizing action. , a solid-state laser device characterized by end pumping. 3. As a combination of claims 1 and 2,
A solid-state laser device that combines several types of solid-state laser rods that exhibit different oscillation wavelengths.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63246990A JPH0294487A (en) | 1988-09-29 | 1988-09-29 | Solid laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63246990A JPH0294487A (en) | 1988-09-29 | 1988-09-29 | Solid laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0294487A true JPH0294487A (en) | 1990-04-05 |
| JPH0566035B2 JPH0566035B2 (en) | 1993-09-20 |
Family
ID=17156735
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63246990A Granted JPH0294487A (en) | 1988-09-29 | 1988-09-29 | Solid laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0294487A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS496894A (en) * | 1972-08-23 | 1974-01-22 | ||
| JPS5013566U (en) * | 1973-06-01 | 1975-02-13 | ||
| JPS5040093A (en) * | 1973-08-15 | 1975-04-12 | ||
| JPS5045595A (en) * | 1973-08-27 | 1975-04-23 | ||
| JPS5541036A (en) * | 1978-09-18 | 1980-03-22 | Seiko Epson Corp | Hearing-aid unit |
-
1988
- 1988-09-29 JP JP63246990A patent/JPH0294487A/en active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS496894A (en) * | 1972-08-23 | 1974-01-22 | ||
| JPS5013566U (en) * | 1973-06-01 | 1975-02-13 | ||
| JPS5040093A (en) * | 1973-08-15 | 1975-04-12 | ||
| JPS5045595A (en) * | 1973-08-27 | 1975-04-23 | ||
| JPS5541036A (en) * | 1978-09-18 | 1980-03-22 | Seiko Epson Corp | Hearing-aid unit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0566035B2 (en) | 1993-09-20 |
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