JPH09270552A - Solid-state laser device - Google Patents
Solid-state laser deviceInfo
- Publication number
- JPH09270552A JPH09270552A JP7761696A JP7761696A JPH09270552A JP H09270552 A JPH09270552 A JP H09270552A JP 7761696 A JP7761696 A JP 7761696A JP 7761696 A JP7761696 A JP 7761696A JP H09270552 A JPH09270552 A JP H09270552A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- state laser
- condenser
- laser device
- laser medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体レーザを励
起光源とする固体レーザ装置に関し、特に、簡単な構成
でありながらレーザ光の発振効率を向上させることがで
きる固体レーザ装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state laser device using a semiconductor laser as an excitation light source, and more particularly to a solid-state laser device capable of improving the oscillation efficiency of laser light with a simple structure.
【０００２】[0002]
【従来の技術】半導体レーザ素子からの励起光によって
固体レーザ媒質を励起してレーザ光を出力する固体レー
ザ装置では、レーザ光の出力を上げるために、励起光源
である半導体レーザ素子を増設することが行なわれてい
る。2. Description of the Related Art In a solid-state laser device that pumps a solid-state laser medium by pumping light from a semiconductor laser element to output laser light, a semiconductor laser element, which is a pumping light source, must be added in order to increase the output of laser light. Is being carried out.
【０００３】一般に、固体レーザ媒質の励起に用いられ
る半導体レーザ素子は、連続発振かつ高出力となってお
り、出力が約１〜４Ｗのシングルチップ型と、多数個の
シングルチップ型半導体レーザ素子を一次元に配設した
出力が約１０〜４０Ｗのレーザバー型とに分類すること
ができる。また、パルス発振する半導体レーザ素子で
は、半導体レーザバーを縦方向に積み重ねた二次元スタ
ック型もある。Generally, a semiconductor laser device used for pumping a solid-state laser medium has a continuous oscillation and a high output, and a single-chip type semiconductor laser device having an output of about 1 to 4 W and a large number of single-chip type semiconductor laser devices are provided. It can be classified into a laser bar type having a one-dimensionally arranged output of about 10 to 40 W. In addition, as a semiconductor laser device that oscillates in pulses, there is also a two-dimensional stack type in which semiconductor laser bars are vertically stacked.
【０００４】このような半導体レーザ素子を複数用いる
ことにより、励起光エネルギーを増大させることがで
き、固体レーザ装置のレーザ光の出力を上げることがで
きる。ところが、半導体レーザ素子を増設すると、固体
レーザ媒質に出射される励起光の数も増えるため、これ
ら励起光を全て有効に固体レーザ媒質に入射させなけれ
ば、固体レーザ媒質内における励起密度が低下してレー
ザ光の発振効率が悪化してしまうことになる。By using a plurality of such semiconductor laser elements, the excitation light energy can be increased and the laser light output of the solid-state laser device can be increased. However, as the number of pumping lights emitted to the solid-state laser medium increases as the number of semiconductor laser elements increases, the pumping density in the solid-state laser medium decreases unless all the pumping lights are effectively incident on the solid-state laser medium. As a result, the oscillation efficiency of the laser light deteriorates.
【０００５】そこで、従来のシングルチップ型の半導体
レーザ素子を用いた固体レーザ装置では、特開平２−１
８５０８２号に示すように、複数の半導体レーザ素子か
ら出射された各励起光を、これら励起光にそれぞれ対応
する複数のコリメートレンズによって平行ビームに整形
した後、各平行ビームを大型の凸レンズによって収束さ
せて固体レーザ媒質の端面に入射させていた。Therefore, a conventional solid-state laser device using a single-chip type semiconductor laser device is disclosed in Japanese Patent Laid-Open No. 2-1.
As shown in No. 85082, each pumping light emitted from a plurality of semiconductor laser elements is shaped into a parallel beam by a plurality of collimating lenses corresponding to the pumping light, and then each parallel beam is converged by a large convex lens. It was incident on the end face of the solid-state laser medium.
【０００６】また、従来のレーザバー型の半導体レーザ
素子を用いた固体レーザ装置では、特開平３−２８６５
８３号に示すように、バー上に並べられた複数の半導体
レーザ素子からの各励起光を、単一のコリメートレンズ
によって平行ビームに整形した後、これら平行ビームを
回折格子により固体レーザ媒質に導いていた。A conventional solid-state laser device using a laser bar type semiconductor laser device is disclosed in Japanese Patent Laid-Open No. 2865/1993.
As shown in No. 83, each excitation light from a plurality of semiconductor laser elements arranged on a bar is shaped into a parallel beam by a single collimating lens, and then these parallel beams are guided to a solid laser medium by a diffraction grating. Was there.
【０００７】[0007]
【発明が解決しようとする課題】ところが、上述した従
来の固体レーザ装置では、前記半導体レーザ素子と、前
記コリメートレンズ，前記凸レンズ，前記回析格子等の
集光光学系との位置関係が厳密に要求され、これら部材
の位置関係にわずかでも位置ずれが生じた場合は、前記
固体レーザ媒質におけるレーザ光の発振効率が低下して
しまい、質の良いレーザ光が得られないという問題があ
った。However, in the conventional solid-state laser device described above, the positional relationship between the semiconductor laser element and the focusing optical system such as the collimating lens, the convex lens, and the diffraction grating is strictly controlled. If the positional relationship between these members is required to be slightly displaced, there is a problem in that the oscillation efficiency of the laser light in the solid-state laser medium decreases, and high-quality laser light cannot be obtained.
【０００８】すなわち、特開平２−１８５０８２号の固
体レーザ装置では、複数の前記半導体レーザ素子→複数
の前記コリメートレンズ→前記凸レンズのそれぞれを正
確に位置決めしなければ、複数の励起光を前記固体レー
ザ媒質に効果的に入射させることができず、これら部材
の位置関係にわずかでも位置ずれが生じた場合は、前記
固体レーザ媒質におけるレーザ光の発振効率が低下して
しまう。That is, in the solid-state laser device disclosed in Japanese Patent Laid-Open No. 2-185082, unless the plurality of semiconductor laser elements, the plurality of collimating lenses, and the convex lens are accurately positioned, a plurality of pumping light beams are emitted from the solid-state laser. If the light cannot enter the medium effectively and the positional relationship between these members is slightly displaced, the oscillation efficiency of the laser light in the solid-state laser medium decreases.
【０００９】一方、特開平３−２８６５８３号の固体レ
ーザ装置では、複数の半導体レーザ素子から出射された
各励起光を、前記回析格子に正確に入射させなければ、
これら励起光を前記固体レーザ媒質に効果的に入射させ
ることができず、これら部材の位置関係にわずかでも位
置ずれが生じた場合は、前記固体レーザ媒質におけるレ
ーザ光の発振効率が低下してしまう。On the other hand, in the solid-state laser device disclosed in Japanese Unexamined Patent Publication No. 3-286583, each pumping light emitted from a plurality of semiconductor laser elements must be accurately incident on the diffraction grating.
If these excitation lights cannot be effectively incident on the solid-state laser medium and the positional relationship between these members is slightly displaced, the oscillation efficiency of the laser light in the solid-state laser medium is reduced. .
【００１０】また、前記半導体レーザ素子と前記集光光
学系との位置ずれの許容量が小さいため、装置の組み立
て時において、前記半導体レーザ素子と前記集光光学系
の位置調整を行なわなければならず、装置の組み立てに
多大な手間と時間を要するという問題があった。なお、
前記半導体レーザ素子は消耗品であるから、該半導体レ
ーザ素子の交換時においても同様の問題が生じた。Since the positional deviation between the semiconductor laser element and the condensing optical system is small, the positions of the semiconductor laser element and the condensing optical system must be adjusted when the device is assembled. However, there is a problem that it takes a lot of time and effort to assemble the device. In addition,
Since the semiconductor laser device is a consumable item, the same problem occurs when the semiconductor laser device is replaced.
【００１１】さらに、上述した従来の固体レーザ装置で
は、前記集光光学系が、前記コリメートレンズ，前記凸
レンズ，前記回析格子等の多数の光学系部品からなり、
部品点数の増大によって装置が複雑化してしまうという
問題もあった。Further, in the above-mentioned conventional solid-state laser device, the condensing optical system is composed of a large number of optical system parts such as the collimating lens, the convex lens, the diffraction grating, and the like.
There is also a problem that the device becomes complicated due to an increase in the number of parts.
【００１２】本発明は、上記問題点にかんがみてなされ
たものであり、簡単な構成によってレーザ光の発振効率
と質の向上とを図ることができ、また、部材間の特別な
位置調整を不要にし、装置の組み立てを容易に行なうこ
とができる固体レーザ装置の提供を目的とする。The present invention has been made in view of the above problems, and can improve the oscillation efficiency and quality of laser light with a simple structure and does not require any special position adjustment between members. In addition, it is an object of the present invention to provide a solid-state laser device that can be easily assembled.
【００１３】[0013]
【課題を解決するための手段】上記目的を達成するため
に、請求項１記載の固体レーザ装置は、半導体レーザ素
子からの励起光によって固体レーザ媒質を励起してレー
ザ光を出力する固体レーザ装置において、側壁に前記半
導体レーザ素子からの励起光を入射するための入射窓が
形成してあるとともに、内部に前記固体レーザ媒質を収
納する筒状の集光器と、一端を幅広の入射面、他端を幅
狭の出射面とした楔状となっており、テーパ状の胴部に
反射処理が施してあるとともに、前記出射面側を前記集
光器の入射窓に挿入してあり、前記入射面から入射され
た前記半導体レーザ素子の励起光を前記胴部によって反
射させ、前記集光器内の前記固体レーザ媒質に導光する
励起光導光部とを備えた構成としてある。In order to achieve the above object, a solid-state laser device according to claim 1 is a solid-state laser device for exciting a solid-state laser medium with excitation light from a semiconductor laser element to output laser light. In, while forming an entrance window for entering the excitation light from the semiconductor laser element on the side wall, a cylindrical condenser for housing the solid-state laser medium inside, a wide entrance surface at one end, It has a wedge shape with the other end having a narrow exit surface, the tapered barrel is subjected to reflection processing, and the exit surface side is inserted into the entrance window of the light collector. And a pumping light guide part for guiding the pumping light of the semiconductor laser element incident from the surface thereof by the barrel and guiding the pumping light to the solid-state laser medium in the condenser.
【００１４】このような構成によれば、楔状の前記励起
光導光部と前記半導体レーザ素子との位置ずれの許容量
が大きくなるとともに、前記励起光導光部と前記集光器
内の前記固体レーザ媒質との位置ずれが生じなくなり、
前記半導体レーザ素子からの励起光をもれなく前記集光
器内に入射させることができる。したがって、部材間の
特別な位置調整が不要となり、装置の組み立てを容易に
行なうことができる。With such a configuration, the allowable amount of positional deviation between the wedge-shaped pumping light guide section and the semiconductor laser element is increased, and the pumping light guide section and the solid-state laser in the condenser are provided. No displacement from the medium occurs,
Excitation light from the semiconductor laser device can be incident on the condenser without exception. Therefore, special position adjustment between the members is unnecessary, and the device can be easily assembled.
【００１５】請求項２記載の固体レーザ装置は、前記励
起光導光部を楔状の透明体ブロックによって形成し、前
記胴部の外周面に反射処理を施した構成としてある。こ
のような構成とすれば、前記励起光導光部の入射面から
入射された前記半導体レーザ素子の励起光を、反射処理
した前記周面により反射させ、前記集光器内の前記固体
レーザ媒質に導光することができる。In the solid-state laser device according to a second aspect of the present invention, the pumping light guide portion is formed by a wedge-shaped transparent body block, and the outer peripheral surface of the body portion is subjected to a reflection treatment. With such a configuration, the excitation light of the semiconductor laser element that is incident from the incident surface of the excitation light guide section is reflected by the peripheral surface that has been subjected to the reflection processing, and is reflected by the solid-state laser medium in the condenser. Can guide light.
【００１６】請求項３記載の固体レーザ装置は、前記集
光器を筒状の不透明体によって形成し、側壁の内周面に
反射処理を施した構成としてあり、また、請求項４記載
の固体レーザ装置は、前記集光器を筒状の透明体によっ
て形成し、側壁の内周面又は外周面に反射処理を施した
構成としてある。According to a third aspect of the present invention, there is provided the solid-state laser device according to the fourth aspect, wherein the condenser is formed by a cylindrical opaque body, and the inner peripheral surface of the side wall is subjected to a reflection treatment. In the laser device, the condenser is formed of a cylindrical transparent body, and the inner peripheral surface or the outer peripheral surface of the side wall is subjected to a reflection treatment.
【００１７】このような構成とすれば、前記集光器に入
射された前記励起光のうち、前記固体レーザ媒質に入射
されずに前記集光器内において拡散した一部の励起光が
前記集光器の側壁に反射され、前記固体レーザ媒質に入
射される。すなわち、前記半導体レーザ素子からの励起
光の全てを、効果的に前記固体レーザ媒質に入射させ、
前記固体レーザ媒質を均等に励起させることができ、前
記固体レーザ媒質から出力されるレーザ光の発振効率と
質の向上とを図ることができる。According to this structure, a part of the excitation light, which is not incident on the solid-state laser medium but is diffused in the condenser, out of the excitation light that is incident on the condenser. The light is reflected by the side wall of the optical device and is incident on the solid-state laser medium. That is, all of the excitation light from the semiconductor laser device is effectively incident on the solid-state laser medium,
The solid-state laser medium can be uniformly excited, and the oscillation efficiency and quality of the laser light output from the solid-state laser medium can be improved.
【００１８】請求項５記載の固体レーザ装置は、前記集
光器と前記固体レーザ媒質の間に、該固体レーザ媒質を
冷却するための流体を充填した構成としてある。このよ
うな構成とすれば、レーザ光の発振効率の向上を図ると
同時に、前記固体レーザ媒質を効果的に冷却することが
でき、前記固体レーザ媒質の局部過熱を確実に防止する
ことができる。これにより、前記固体レーザ媒質の温度
分布を均一にすることができ、装置の信頼性を向上させ
ることができる。According to a fifth aspect of the solid-state laser device, a fluid for cooling the solid-state laser medium is filled between the condenser and the solid-state laser medium. With such a configuration, it is possible to improve the oscillation efficiency of the laser light, at the same time effectively cool the solid-state laser medium, and reliably prevent local overheating of the solid-state laser medium. Thereby, the temperature distribution of the solid-state laser medium can be made uniform, and the reliability of the device can be improved.
【００１９】[0019]
【発明の実施の形態】以下、本発明の固体レーザ装置の
実施形態について、図面を参照しつつ説明する。まず、
本発明の第一実施形態に係る固体レーザ装置について説
明する。図１は本発明の第一実施形態に係る固体レーザ
装置を示す平面図であり、また、図２は図１のＡ−Ａ断
面図である。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the solid-state laser device of the present invention will be described below with reference to the drawings. First,
A solid-state laser device according to the first embodiment of the present invention will be described. 1 is a plan view showing a solid-state laser device according to a first embodiment of the present invention, and FIG. 2 is a sectional view taken along line AA of FIG.
【００２０】これら図面において、１は半導体レーザ素
子であり励起光を出力する。この半導体レーザ素子１
は、下記固体レーザ媒質５における吸収が良好な波長帯
８０９ｎｍ付近で発振するようにしてある。In these drawings, reference numeral 1 denotes a semiconductor laser device which outputs excitation light. This semiconductor laser device 1
Oscillates in the vicinity of a wavelength band of 809 nm where absorption in the solid laser medium 5 described below is good.
【００２１】２は励起光導光部であり、楔状の透明体ブ
ロックによって形成してある。この励起光導光部２の幅
の広い一端を、半導体レーザ素子１の励起光の入射面と
してあり、また、幅の狭い他端を、励起光の出射面とし
てある。さらに、励起光導光部２の胴部の外周面には、
金属メッキ又は誘電体多層膜を蒸着することによって、
励起光の反射部３ａが形成してある。Reference numeral 2 denotes an excitation light guide portion, which is formed by a wedge-shaped transparent body block. One end of the excitation light guide portion 2 having a wide width serves as an incident surface of the excitation light of the semiconductor laser element 1, and the other end having a narrow width serves as an emission surface of the excitation light. Further, on the outer peripheral surface of the body portion of the excitation light guide portion 2,
By depositing metal plating or dielectric multilayer film,
A reflection portion 3a for exciting light is formed.
【００２２】４は集光器であり、筒状の不透明体によっ
て形成してある。この集光器４の側壁には、励起光導光
部２の出射面側（先端側）を挿入するための入射窓４ａ
が設けてある。また、側壁の内周面には、金属メッキ又
は誘電体多層膜を蒸着することによって、励起光の反射
部３ｂが形成してある。Reference numeral 4 denotes a condenser, which is formed of a cylindrical opaque body. An entrance window 4a for inserting the exit surface side (tip end side) of the excitation light guide portion 2 into the side wall of the condenser 4.
Is provided. Further, a reflection part 3b for exciting light is formed on the inner peripheral surface of the side wall by metal plating or vapor deposition of a dielectric multilayer film.
【００２３】このような集光器４の内部には、上記固体
レーザ媒質（Ｎｄ：ＹＡＧロッド）５が収納してある。
固体レーザ媒質５は、Ｎｄ：ＹＡＧ（ネオジミウム：ア
ルミナイトリウム）によって形成した円柱状となってお
り、半導体レーザ素子１からの励起光を受けてビーム光
を出力する。The solid-state laser medium (Nd: YAG rod) 5 is housed inside the condenser 4.
The solid-state laser medium 5 has a columnar shape made of Nd: YAG (neodymium: aluminium), and receives the excitation light from the semiconductor laser device 1 and outputs a beam light.
【００２４】また、図１において、集光器４の長手方向
の両側には、全反射鏡６と出力鏡７が配設してある。こ
れら全反射鏡６と出力鏡７は、レーザ共振器を形成す
る。In FIG. 1, a total reflection mirror 6 and an output mirror 7 are arranged on both sides of the condenser 4 in the longitudinal direction. The total reflection mirror 6 and the output mirror 7 form a laser resonator.
【００２５】次に、上記構成からなる本実施形態の固体
レーザ装置の動作について、図１及び図２を参照しつつ
説明する。Next, the operation of the solid-state laser device of this embodiment having the above structure will be described with reference to FIGS. 1 and 2.
【００２６】これら図面において、半導体レーザ素子１
が波長帯８０９ｎｍ付近で発振すると、励起光導光部２
に向けて励起光が出射される。この励起光は、図２に示
すように、励起光導光部２の幅広の入射面に入射され、
励起光導光部２の胴部に形成した反射部３ａにより反射
された後、幅狭の出射面から出射される。In these drawings, the semiconductor laser device 1 is shown.
Is oscillated near the wavelength band of 809 nm, the excitation light guide section 2
Excitation light is emitted toward. As shown in FIG. 2, this excitation light is incident on the wide incident surface of the excitation light guide section 2,
After being reflected by the reflection portion 3a formed on the body of the excitation light guide portion 2, the light is emitted from the narrow emission surface.
【００２７】励起光導光部２の出射面から出射された励
起光は、集光器４内の固体レーザ媒質５に入射される。
また、図２に示すように、固体レーザ媒質５に入射され
ず、集光器４内で拡散した一部の励起光は、集光器４の
側壁の内周面に形成した反射部３ｂにより反射された
後、固体レーザ媒質５に入射される。The excitation light emitted from the emission surface of the excitation light guide section 2 enters the solid-state laser medium 5 in the condenser 4.
Further, as shown in FIG. 2, a part of the excitation light which is not incident on the solid-state laser medium 5 and diffused in the condenser 4 is reflected by the reflecting portion 3 b formed on the inner peripheral surface of the side wall of the condenser 4. After being reflected, it is incident on the solid-state laser medium 5.
【００２８】これにより、半導体レーザ素子１から出射
された励起光が、すべて固体レーザ媒質５に吸収され、
固体レーザ媒質５が励起する。その後、固体レーザ媒質
５内に反転分布が形成され、図１に示すように、全反射
鏡６と出力鏡７により形成されたレーザ共振器によっ
て、固体レーザ媒質５から波長１０６４μｍのレーザ光
が発振される。As a result, all the excitation light emitted from the semiconductor laser device 1 is absorbed by the solid-state laser medium 5,
The solid-state laser medium 5 is excited. After that, a population inversion is formed in the solid-state laser medium 5, and as shown in FIG. 1, a laser resonator formed by the total reflection mirror 6 and the output mirror 7 oscillates laser light having a wavelength of 1064 μm from the solid-state laser medium 5. To be done.
【００２９】このような本実施形態の固体レーザ装置に
よれば、幅広の入射面，幅狭の出射面及びテーパ状の反
射部３ａを有する楔状の励起光導光部２を、集光器４の
入射窓４ａに固定する構成としたことにより、半導体レ
ーザ素子１と励起光導光部２との位置ずれの許容量が大
きくなるとともに、励起光導光部２と集光器４内の固体
レーザ媒質５との位置ずれが生じなくなり、半導体レー
ザ素子１からの励起光をもれなく集光器４内に入射させ
ることができる。According to such a solid-state laser device of this embodiment, the wedge-shaped pumping light guiding section 2 having the wide incident surface, the narrow emitting surface, and the tapered reflecting section 3a is provided in the condenser 4. Since the structure is fixed to the entrance window 4a, the allowable amount of positional deviation between the semiconductor laser element 1 and the pumping light guide section 2 becomes large, and the pumping light guide section 2 and the solid-state laser medium 5 in the condenser 4 are arranged. The position shifts from and do not occur, and the excitation light from the semiconductor laser device 1 can be made incident on the condenser 4 without omission.
【００３０】したがって、半導体レーザ素子１，励起光
導光部２及び集光器４等の位置調整が不要となり、装置
の組み立てや、半導体レーザ素子１の取付け及び交換を
容易に行なうことができる。Therefore, it is not necessary to adjust the positions of the semiconductor laser element 1, the excitation light guide section 2, the condenser 4, etc., and the assembly of the device and the mounting and replacement of the semiconductor laser element 1 can be easily performed.
【００３１】また、集光器４の側壁の内周面に反射部３
ｂを形成したことにより、固体レーザ媒質５に入射され
ずに集光器４内において拡散した一部の励起光を固体レ
ーザ媒質５に入射させることができる。すなわち、半導
体レーザ素子１からの励起光の全てを、効果的に固体レ
ーザ媒質５に入射させ、固体レーザ媒質５を均等に励起
させることができ、固体レーザ媒質５から出力されるレ
ーザ光の発振効率と質の向上とを図ることができる。The reflector 3 is provided on the inner peripheral surface of the side wall of the condenser 4.
By forming b, part of the excitation light diffused in the condenser 4 without being incident on the solid-state laser medium 5 can be made incident on the solid-state laser medium 5. That is, all of the pumping light from the semiconductor laser device 1 can be effectively incident on the solid-state laser medium 5 to uniformly pump the solid-state laser medium 5, and the laser light output from the solid-state laser medium 5 can be oscillated. It is possible to improve efficiency and quality.
【００３２】さらに、楔状の励起光導光部２を用いた本
装置は部品点数が少なく、構成の簡単化及び装置のロー
コスト化を図ることもできる。Further, the present device using the wedge-shaped excitation light guide section 2 has a small number of parts, and the structure can be simplified and the cost of the device can be reduced.
【００３３】次に、本発明の第二実施形態に係る固体レ
ーザ装置について、図３を参照しつつ説明する。図３は
本発明の第二実施形態に係る固体レーザ装置を示す断面
図である。Next, a solid-state laser device according to the second embodiment of the present invention will be described with reference to FIG. FIG. 3 is a sectional view showing a solid-state laser device according to the second embodiment of the present invention.
【００３４】本実施形態の固体レーザ装置は、集光器を
円筒状のガラス管（透明体）１１によって形成するとと
もに、その側壁の外周面に誘電体多層膜を蒸着して反射
部３ｃを形成した構成としてある。また、ガラス管１１
の内部は図示しないＯリング等により封止してあり、そ
の側壁と固体レーザ媒質５との間の空間に冷却水（流
体）１２を充填してある。In the solid-state laser device of this embodiment, a condenser is formed by a cylindrical glass tube (transparent body) 11, and a dielectric multilayer film is vapor-deposited on the outer peripheral surface of the side wall thereof to form a reflecting portion 3c. There is a configuration. Also, the glass tube 11
The inside of is sealed with an O-ring or the like (not shown), and the space between the side wall and the solid-state laser medium 5 is filled with cooling water (fluid) 12.
【００３５】なお、第一実施形態と同一符号を付したも
の、すなわち、半導体レーザ素子１，励起光導光部２及
び固体レーザ媒質５等については、第一実施形態の固体
レーザ装置とほぼ同じ構成としてある。The components denoted by the same reference numerals as in the first embodiment, that is, the semiconductor laser element 1, the pumping light guiding portion 2, the solid-state laser medium 5, etc., have substantially the same configuration as the solid-state laser device of the first embodiment. There is.
【００３６】このような構成からなる本実施形態の固体
レーザ装置によれば、レーザ光の発振効率の向上を図る
と同時に、固体レーザ媒質５を効果的に冷却することが
でき、固体レーザ媒質５の局部過熱を確実に防止するこ
とができる。これにより、固体レーザ媒質５の温度分布
を均一にすることができ、装置の信頼性を向上させるこ
とができる。According to the solid-state laser device of the present embodiment having such a configuration, the solid-state laser medium 5 can be effectively cooled while improving the oscillation efficiency of laser light, and the solid-state laser medium 5 can be effectively cooled. It is possible to reliably prevent local overheating. Thereby, the temperature distribution of the solid-state laser medium 5 can be made uniform, and the reliability of the device can be improved.
【００３７】なお、本発明の固体レーザ装置は、上記実
施形態に限定されるものではない。例えば、励起光導光
部２は楔状の透明体ブロックに限らず、不透明な楔状の
筒部材とすることもできる。このような場合は、楔状筒
部材の内周面に反射部を形成する。また、反射部３ａ，
３ｂ，３ｃを形成するための処理、すなわち、反射処理
は金属メッキ又は誘電体多層膜の蒸着に限らず、反射率
の高い種々の反射処理に変更することができる。The solid-state laser device of the present invention is not limited to the above embodiment. For example, the excitation light guide portion 2 is not limited to the wedge-shaped transparent body block, but may be an opaque wedge-shaped cylindrical member. In such a case, the reflecting portion is formed on the inner peripheral surface of the wedge-shaped tubular member. In addition, the reflecting portion 3a,
The treatment for forming 3b and 3c, that is, the reflection treatment is not limited to metal plating or vapor deposition of a dielectric multilayer film, but can be changed to various reflection treatments having high reflectance.
【００３８】さらに、第二実施形態における固体レーザ
媒質５を冷却するための流体は、冷却水（水）１２に限
らず、アンモニア，水銀等の種々の流体を用いることが
できる。Further, the fluid for cooling the solid-state laser medium 5 in the second embodiment is not limited to the cooling water (water) 12, and various fluids such as ammonia and mercury can be used.
【００３９】[0039]
【発明の効果】以上のように、本発明の固体レーザ装置
によれば、簡単な構成によってレーザ光の発振効率と質
の向上とを図ることができ、また、部材間の特別な位置
調整を不要にし、装置の組み立てを容易に行なうことが
できる。As described above, according to the solid-state laser device of the present invention, it is possible to improve the oscillation efficiency and quality of laser light with a simple structure, and to perform special position adjustment between members. It is not necessary and the device can be easily assembled.
【図１】本発明の第一実施形態に係る固体レーザ装置を
示す平面図である。FIG. 1 is a plan view showing a solid-state laser device according to a first embodiment of the present invention.
【図２】図１のＡ−Ａ断面図である。FIG. 2 is a sectional view taken along line AA of FIG.
【図３】本発明の第二実施形態に係る固体レーザ装置を
示す断面図である。FIG. 3 is a sectional view showing a solid-state laser device according to a second embodiment of the present invention.
１ 半導体レーザ素子 ２ 励起光導光部 ３ａ，３ｂ，３ｃ 反射部（反射処理部） ４ 集光器 ４ａ 入射窓 ５ 固体レーザ媒質（Ｎｄ：ＹＡＧロッド） ６ 全反射鏡 ７ 出力鏡 １１ ガラス管（集光器） １２ 冷却水（流体） DESCRIPTION OF SYMBOLS 1 Semiconductor laser element 2 Excitation light guide part 3a, 3b, 3c Reflecting part (reflection processing part) 4 Concentrator 4a Entrance window 5 Solid-state laser medium (Nd: YAG rod) 6 Total reflection mirror 7 Output mirror 11 Glass tube (collection) Optical device) 12 Cooling water (fluid)
Claims (5)
固体レーザ媒質を励起してレーザ光を出力する固体レー
ザ装置において、 側壁に前記半導体レーザ素子からの励起光を入射するた
めの入射窓が形成してあるとともに、内部に前記固体レ
ーザ媒質を収納する筒状の集光器と、 一端を幅広の入射面、他端を幅狭の出射面とした楔状と
なっており、テーパ状の胴部に反射処理が施してあると
ともに、前記出射面側を前記集光器の入射窓に挿入して
あり、前記入射面から入射された前記半導体レーザ素子
の励起光を前記胴部によって反射させ、前記集光器内の
前記固体レーザ媒質に導光する励起光導光部とを備えた
ことを特徴とする固体レーザ装置。1. A solid-state laser device for exciting a solid-state laser medium by pumping light from a semiconductor laser element to output laser light, wherein an entrance window for entering pumping light from the semiconductor laser element is formed on a side wall. In addition, it has a cylindrical concentrator that houses the solid-state laser medium inside, and a wedge shape with a wide entrance surface at one end and a narrow exit surface at the other end. Along with the reflection treatment, the exit surface side is inserted into the entrance window of the condenser, and the excitation light of the semiconductor laser device entered from the entrance surface is reflected by the body portion, A solid-state laser device, comprising: an excitation light guide section for guiding the solid-state laser medium in the optical device.
クによって形成し、前記胴部の外周面に反射処理を施し
た請求項１記載の固体レーザ装置。2. The solid-state laser device according to claim 1, wherein the pumping light guide portion is formed by a wedge-shaped transparent body block, and a reflection treatment is applied to an outer peripheral surface of the body portion.
成し、側壁の内周面に反射処理を施した請求項１記載の
固体レーザ装置。3. The solid-state laser device according to claim 1, wherein the condenser is formed of a cylindrical opaque body, and the inner peripheral surface of the side wall is subjected to a reflection treatment.
し、側壁の内周面又は外周面に反射処理を施した請求項
１記載の固体レーザ装置。4. The solid-state laser device according to claim 1, wherein the condenser is formed of a cylindrical transparent body, and the inner peripheral surface or the outer peripheral surface of the side wall is subjected to a reflection treatment.
に、該固体レーザ媒質を冷却するための流体を充填した
請求項１，２，３又は４記載の固体レーザ装置。5. A solid-state laser device according to claim 1, 2, 3 or 4, wherein a fluid for cooling the solid-state laser medium is filled between the condenser and the solid-state laser medium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7761696A JP2885175B2 (en) | 1996-03-29 | 1996-03-29 | Solid-state laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7761696A JP2885175B2 (en) | 1996-03-29 | 1996-03-29 | Solid-state laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09270552A true JPH09270552A (en) | 1997-10-14 |
| JP2885175B2 JP2885175B2 (en) | 1999-04-19 |
Family
ID=13638856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7761696A Expired - Lifetime JP2885175B2 (en) | 1996-03-29 | 1996-03-29 | Solid-state laser device |
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| Country | Link |
|---|---|
| JP (1) | JP2885175B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004521490A (en) * | 2001-01-22 | 2004-07-15 | ザ・ボーイング・カンパニー | High power side-pumped active mirror solid-state laser |
| JP2007050601A (en) * | 2005-08-18 | 2007-03-01 | Funai Electric Co Ltd | Inkjet printer |
| JP2007134522A (en) * | 2005-11-10 | 2007-05-31 | Sumitomo Heavy Ind Ltd | Optical device and laser amplification method |
| JP2008300885A (en) * | 1998-11-12 | 2008-12-11 | Mitsubishi Electric Corp | Semiconductor laser light emitting apparatus and solid-state laser rod excitation module |
| WO2013013382A1 (en) * | 2011-07-25 | 2013-01-31 | 华中科技大学 | Homogenized rod based multi-pump disc solid-state laser |
-
1996
- 1996-03-29 JP JP7761696A patent/JP2885175B2/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008300885A (en) * | 1998-11-12 | 2008-12-11 | Mitsubishi Electric Corp | Semiconductor laser light emitting apparatus and solid-state laser rod excitation module |
| JP2004521490A (en) * | 2001-01-22 | 2004-07-15 | ザ・ボーイング・カンパニー | High power side-pumped active mirror solid-state laser |
| JP2007050601A (en) * | 2005-08-18 | 2007-03-01 | Funai Electric Co Ltd | Inkjet printer |
| JP4652929B2 (en) * | 2005-08-18 | 2011-03-16 | 船井電機株式会社 | Inkjet printer |
| JP2007134522A (en) * | 2005-11-10 | 2007-05-31 | Sumitomo Heavy Ind Ltd | Optical device and laser amplification method |
| WO2013013382A1 (en) * | 2011-07-25 | 2013-01-31 | 华中科技大学 | Homogenized rod based multi-pump disc solid-state laser |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2885175B2 (en) | 1999-04-19 |
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