JP2706098B2 - Solid state laser - Google Patents

Solid state laser

Info

Publication number
JP2706098B2
JP2706098B2 JP63217621A JP21762188A JP2706098B2 JP 2706098 B2 JP2706098 B2 JP 2706098B2 JP 63217621 A JP63217621 A JP 63217621A JP 21762188 A JP21762188 A JP 21762188A JP 2706098 B2 JP2706098 B2 JP 2706098B2
Authority
JP
Japan
Prior art keywords
solid
laser
state laser
light
laser medium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP63217621A
Other languages
Japanese (ja)
Other versions
JPH0265283A (en
Inventor
重典 八木
昌樹 葛本
一樹 久場
康人 名井
利隆 青柳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP63217621A priority Critical patent/JP2706098B2/en
Priority to GB8902856A priority patent/GB2215906B/en
Priority to US07/308,586 priority patent/US4924474A/en
Priority to DE3943722A priority patent/DE3943722C2/en
Priority to DE3904039A priority patent/DE3904039C2/en
Publication of JPH0265283A publication Critical patent/JPH0265283A/en
Priority to GB9202756A priority patent/GB2253515B/en
Application granted granted Critical
Publication of JP2706098B2 publication Critical patent/JP2706098B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/0915—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light
    • H01S3/0933—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of a semiconductor, e.g. light emitting diode

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体レーザ（LD）等の半導体素子の光
によって励起される固体レーザの励起構造に関するもの
である。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an excitation structure of a solid-state laser excited by light from a semiconductor device such as a semiconductor laser (LD).

〔従来の技術〕[Conventional technology]

第７図は例えば米国特許3,624,545号（U.S.Patent3,6
24,545）に示された従来のLD励起固体レーザの構造を示
す図であり、図において、１はLD、２はYAGの丸棒等の
レーザ媒質、3,4はレーザ媒質２の端面に形成された全
反射膜と部分反射膜、５は反射鏡である。FIG. 7 shows, for example, US Pat. No. 3,624,545 (US Pat.
24, 545) is a diagram showing the structure of a conventional LD-pumped solid-state laser, wherein 1 is an LD, 2 is a laser medium such as a YAG round bar, and 3 and 4 are formed on an end face of a laser medium 2. The total reflection film, the partial reflection film, and 5 are reflection mirrors.

次に動作について説明する。 Next, the operation will be described.

LD1から出射された励起光はレーザ媒質２に入射し、
吸収される。吸収されずに通過した光は反射鏡５によっ
て反射され、再びレーザ媒質２に入射する。吸収された
光のエネルギーは部分反射膜４と全反射膜３に囲まれて
成る光共振器によって発振状態となり、一部がレーザ光
となり外部へ放出される。The excitation light emitted from the LD 1 enters the laser medium 2,
Absorbed. The light that has passed without being absorbed is reflected by the reflecting mirror 5 and enters the laser medium 2 again. The energy of the absorbed light is oscillated by the optical resonator surrounded by the partial reflection film 4 and the total reflection film 3, and a part of the energy is emitted as laser light to the outside.

LD1の光に対するレーザ媒質２の吸収係数は波長依存
性が大きく、例えば808.5nmに対しては0.75mm-1,802nm
に対しては0.1mm-1である。このためレーザ媒質に有効
に光を吸収させるためにはLD1のスペクトルを精密にコ
ントロールすることが必要であった。The absorption coefficient of the laser medium 2 for the light of the LD 1 has a large wavelength dependence, for example, 0.75 mm −1 , 802 nm for 808.5 nm
Is 0.1 mm -1 . For this reason, it was necessary to precisely control the spectrum of LD1 in order for the laser medium to effectively absorb light.

〔発明が解決しようとする課題〕[Problems to be solved by the invention]

従来の固体レーザは以上のように構成されているの
で、レーザ媒質にレーザダイオードの光を完全に吸収さ
せるのが難しく、従ってレーザ発振のエネルギー効率が
低いという問題点があった。Since the conventional solid-state laser is configured as described above, it is difficult to completely absorb the light of the laser diode in the laser medium, and there is a problem that the energy efficiency of laser oscillation is low.

また、従来の固体レーザはレーザ媒質の放熱が不十分
で、出力の増大とともにビームの質が劣化するという問
題点もある。Further, the conventional solid-state laser has a problem in that the heat radiation of the laser medium is insufficient, and the beam quality is degraded as the output increases.

この発明は上記のような問題点を解消するためになさ
れたもので、LDの光を効率よく吸収でき、発振のエネル
ギー効率を向上できる固体レーザを得ることを目的とす
る。The present invention has been made to solve the above problems, and has as its object to obtain a solid-state laser capable of efficiently absorbing light from an LD and improving the energy efficiency of oscillation.

〔課題を解決するための手段〕[Means for solving the problem]

この発明（請求項１）に係る固体レーザは、固体レー
ザ媒質を半導体レーザによって励起する固体レーザにお
いて、上記半導体レーザの光を上記固体レーザ媒質に対
して斜めに入射させる光ガイドを備え、上記光ガイド
が、壁面反射による中空光ガイドであることを特徴とす
るものである。The solid-state laser according to the present invention (claim 1) is a solid-state laser that excites a solid-state laser medium with a semiconductor laser, the light-guide being provided with a light obliquely incident on the solid-state laser medium. The guide is a hollow light guide by wall reflection.

また、この発明（請求項２）に係る固体レーザは、固
体レーザ媒質を半導体レーザによって励起する固体レー
ザにおいて、上記半導体レーザの光を導波し、導波した
光を上記固体レーザ媒質に対して斜めに直接入射させる
光ファイバを備えたことを特徴とするものである。Also, a solid-state laser according to the present invention (claim 2) is a solid-state laser in which a solid-state laser medium is excited by a semiconductor laser, wherein the light of the semiconductor laser is guided and the guided light is transmitted to the solid-state laser medium. An optical fiber for directly entering obliquely is provided.

〔作用〕[Action]

この発明（請求項１）によれば、固体レーザ媒質を半
導体レーザによって励起する固体レーザにおいて、上記
半導体レーザの光を上記固体レーザ媒質に対して斜めに
入射させる光ガイドを備え、上記光ガイドが、壁面反射
による中空光ガイドである構成としたから、LD光が効率
よくレーザ媒質に吸収され、発振エネルギー効率を向上
でき、かつ、均一性に優れたレーザ媒質の冷却が可能な
小型の固体レーザを安価に実現できる。According to the present invention (claim 1), in a solid-state laser that excites a solid-state laser medium with a semiconductor laser, the solid-state laser includes a light guide for causing light of the semiconductor laser to be obliquely incident on the solid-state laser medium. , Because it is a hollow light guide with wall reflection, the LD light is efficiently absorbed by the laser medium, the oscillation energy efficiency can be improved, and the laser medium with excellent uniformity can be cooled. Can be realized at low cost.

また、この発明（請求項２）によれば、固体レーザ媒
質を半導体レーザによって励起する固体レーザにおい
て、上記半導体レーザの光を導波し、導波した光を上記
固体レーザ媒質に対して斜めに直接入射させる光ファイ
バを備えたものとしたから、LD光が効率よくレーザ媒質
に吸収され、発振エネルギー効率を向上でき、かつ、均
一性に優れたレーザ媒質の冷却が可能な小型の固体レー
ザを安価に実現できる。According to the invention (claim 2), in a solid-state laser in which a solid-state laser medium is excited by a semiconductor laser, the light of the semiconductor laser is guided, and the guided light is oblique to the solid-state laser medium. Since it has an optical fiber for direct incidence, a small solid-state laser that can efficiently absorb laser light, improve oscillation energy efficiency, and cool the laser medium with excellent uniformity is provided. It can be realized at low cost.

〔実施例〕〔Example〕

以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.

第１図は本発明の一実施例による固体レーザを示す図
であり、図において、１はLD、11はマウント、12は励起
光、２はレーザ媒質、21はAR（反射防止）膜、30はPR
（部分反射）ミラー、４はTR（全反射）膜、６はホル
ダ、61は充填物、７は光ガイド、71は反射面、８は冷却
器、81は放熱フィン、９はレーザ出力である。FIG. 1 is a view showing a solid-state laser according to an embodiment of the present invention, in which 1 is an LD, 11 is a mount, 12 is excitation light, 2 is a laser medium, 21 is an AR (anti-reflection) film, 30 Is PR
(Partial reflection) mirror, 4 is a TR (total reflection) film, 6 is a holder, 61 is a filler, 7 is a light guide, 71 is a reflection surface, 8 is a cooler, 81 is a radiation fin, and 9 is a laser output. .

第２図は第１図の固体レーザを端面方向から見た図で
あり、この図に示すようにLD1は円周方向に複数個配置
されている。FIG. 2 is a view of the solid-state laser of FIG. 1 viewed from the end face direction. As shown in FIG. 2, a plurality of LDs 1 are arranged in the circumferential direction.

第３図は第１図の固体レーザにおける励起光12の動き
を従来の固体レーザの励起光の動きと対比して示した図
である。FIG. 3 is a diagram showing the movement of the excitation light 12 in the solid-state laser of FIG. 1 in comparison with the movement of the excitation light of the conventional solid-state laser.

次に動作について説明する。 Next, the operation will be described.

LD1の励起光12は斜めにレーザ媒質２に入射する。こ
の結果、レーザ媒質内の光路が長くなり（図では従来例
の約1.4倍）、有効に吸収される。さらにレーザ媒質の
表面で一部（20％程度）反射された励起光12は光ガイド
７の反射面71で再び反射された方向を変えられてレーザ
媒質２に再入射する。このようにレーザ媒質２の表面と
反射面71の成す三角形の空間で励起光12は複数回反射を
繰り返すうちに殆どレーザ媒質に吸収される。このため
LD光の波長に多少のバラツキがあり、吸収係数にバラツ
キがあっても、有効にレーザ媒質を励起できる。第３図
（ａ），（ｂ）はそれぞれ本実施例の固体レーザ、従来
の固体レーザの励起光の動きを示している。LD1の励起
光は一般に直線偏光しているので、第３図（ａ）に示す
ようにＰ波となるようにLD1の取り付けを行なえば、励
起光はランダム偏光，円偏光，またはＳ波の場合よりも
さらに良くレーザ媒質に吸収される。The pumping light 12 of the LD 1 enters the laser medium 2 at an angle. As a result, the optical path in the laser medium becomes longer (approximately 1.4 times that of the conventional example in the figure) and is effectively absorbed. Further, the direction of the excitation light 12 partially reflected (about 20%) on the surface of the laser medium is changed again by the reflection surface 71 of the light guide 7 and re-enters the laser medium 2. As described above, the excitation light 12 is almost absorbed by the laser medium in the triangular space formed by the surface of the laser medium 2 and the reflection surface 71 while being repeatedly reflected a plurality of times. For this reason
The laser medium can be effectively pumped even if there is some variation in the wavelength of the LD light and the absorption coefficient varies. 3 (a) and 3 (b) show the movements of the excitation light of the solid-state laser of the present embodiment and the excitation light of the conventional solid-state laser, respectively. Since the excitation light of LD1 is generally linearly polarized, if the LD1 is mounted so as to be a P-wave as shown in FIG. 3 (a), the excitation light is randomly polarized, circularly polarized, or S-wave. It is even better absorbed by the laser medium.

このようにしてレーザ媒質２に吸収されたエネルギー
はTR膜４とPRミラー30とで構成される共振器で発振し、
一部がレーザ出力９として取り出される。The energy absorbed in the laser medium 2 in this manner oscillates in a resonator composed of the TR film 4 and the PR mirror 30,
A part is taken out as a laser output 9.

レーザ媒質２の熱は、薄い充填材61,ホルダ６を熱伝
導で通過して冷却器８へ流れ、最終的に放熱フィン81か
ら放出される、LD1の熱も、マウント11,ホルダ６を介し
て同様に効率よく冷却されている。充填材61を励起光に
対して透明体とし、ホルダ６の内面を反射体にすること
で励起光の吸収効率はさらに向上する。The heat of the laser medium 2 passes through the thin filler 61 and the holder 6 by heat conduction and flows to the cooler 8, and finally, the heat of the LD 1, which is released from the radiation fins 81, also passes through the mount 11 and the holder 6. As well as efficient cooling. By making the filler 61 transparent to the excitation light and making the inner surface of the holder 6 a reflector, the absorption efficiency of the excitation light is further improved.

このように本実施例では、LD光をレーザ媒質に対して
斜めに入射させるとともにレーザ媒質表面からの反射光
を再びレーザ媒質へ入射させるガイド面を備え、LDの偏
光面がレーザ媒質に対してＰ波となるようにLDの取り付
け角を設定した構成としたから、発振エネルギー効率の
高い固体レーザを得ることができ、さらに、熱伝導的に
効率よくレーザ媒質及び半導体レーザを冷却する構成と
したからビーム品質の優れた固体レーザが得られる。As described above, in the present embodiment, the LD surface is provided obliquely with respect to the laser medium, and the guide surface is provided so that the reflected light from the laser medium surface is again incident on the laser medium. Since the mounting angle of the LD is set so that it becomes a P-wave, a solid-state laser with high oscillation energy efficiency can be obtained, and the laser medium and the semiconductor laser are cooled efficiently with heat conduction. Thus, a solid-state laser having excellent beam quality can be obtained.

なお上記実施例では、光ガイド７を円錐状に形成した
が、反射面71のある穴状のものでもよく、あるいは光フ
ァイバによるものでもよい。またLD1のマウント11の構
造は種々の変形が可能である。In the above embodiment, the light guide 7 is formed in a conical shape. However, the light guide 7 may be a hole having a reflection surface 71, or may be an optical fiber. Further, the structure of the mount 11 of the LD 1 can be variously modified.

第４図（ａ），（ｂ），（ｃ）はそれぞれ本発明の他
の実施例の要部を示す図である。第４図（ａ）は直線穴
状、第４図（ｂ）は屈曲，または湾曲した穴状、第４図
（ｃ）は光ファイバ120を光ガイド導入孔122に通して光
ガイドを形成した例である。FIGS. 4 (a), (b) and (c) are views showing the main parts of another embodiment of the present invention. 4 (a) is a straight hole shape, FIG. 4 (b) is a bent or curved hole shape, and FIG. 4 (c) is a light guide formed by passing the optical fiber 120 through the light guide introduction hole 122. It is an example.

また、LD1の配列は第５図に示すようにレーザ媒質２
の軸方向に複数個として大出力化を図ることが可能であ
る。In addition, the arrangement of LD1 is as shown in FIG.
It is possible to increase the output by using a plurality in the axial direction.

また、上記各実施例ではレーザ媒質２がロッド（丸
棒）状のものについて示したが、板状のスラブ型レーザ
媒質を用い、レーザ光軸がその内で複数回の内部全反射
を繰り返している、いわゆるスラブ型レーザにも本発明
は有効である。第６図は本発明をスラブ型レーザに適用
した一実施例を示す図であり、第６図（ａ）はその横断
面図、第６図（ｂ）はその縦断面図である。図におい
て、20はスラブ型レーザ媒質、40はTRミラーである。図
に示すように、スラブ型レーザ媒質20の幅方向に複数個
のLDが複数列配置されている。In each of the above embodiments, the laser medium 2 is shown as having a rod (round bar) shape. However, a plate-shaped slab type laser medium is used, and the laser optical axis repeats a plurality of total internal reflections therein. The present invention is also effective for a so-called slab type laser. FIG. 6 is a view showing an embodiment in which the present invention is applied to a slab type laser. FIG. 6 (a) is a cross sectional view thereof, and FIG. 6 (b) is a longitudinal sectional view thereof. In the figure, 20 is a slab type laser medium, and 40 is a TR mirror. As shown in the figure, a plurality of LDs are arranged in a plurality of rows in the width direction of the slab type laser medium 20.

〔発明の効果〕〔The invention's effect〕

以上のように、この発明（請求項１）によれば、固体
レーザ媒質を半導体レーザによって励起する固体レーザ
において、上記半導体レーザの光を上記固体レーザ媒質
に対して斜めに入射させる光ガイドを備え、上記光ガイ
ドが、壁面反射による中空光ガイドである構成としたか
ら、LD光が効率よくレーザ媒質に吸収され、発振エネル
ギー効率を向上でき、かつ、均一性に優れたレーザ媒質
の冷却が可能な小型の固体レーザを安価に実現できる効
果がある。As described above, according to the present invention (claim 1), a solid-state laser that excites a solid-state laser medium with a semiconductor laser includes a light guide that obliquely enters the light of the semiconductor laser into the solid-state laser medium. Since the light guide is a hollow light guide by wall reflection, LD light is efficiently absorbed by the laser medium, the oscillation energy efficiency can be improved, and the laser medium with excellent uniformity can be cooled. There is an effect that a compact solid-state laser can be realized at low cost.

また、この発明（請求項２）によれば、固体レーザ媒
質を半導体レーザによって励起する固体レーザにおい
て、上記半導体レーザの光を導波し、導波した光を上記
固体レーザ媒質に対して斜めに直接入射させる光ファイ
バを備えたものとしたから、LD光が効率よくレーザ媒質
に吸収され、発振エネルギー効率を向上でき、かつ、均
一性に優れたレーザ媒質の冷却が可能な小型の固体レー
ザを安価に実現できる効果がある。According to the invention (claim 2), in a solid-state laser in which a solid-state laser medium is excited by a semiconductor laser, the light of the semiconductor laser is guided, and the guided light is oblique to the solid-state laser medium. Since it has an optical fiber for direct incidence, a small solid-state laser that can efficiently absorb laser light, improve oscillation energy efficiency, and cool the laser medium with excellent uniformity is provided. There is an effect that can be realized at low cost.

【図面の簡単な説明】[Brief description of the drawings]

第１図，第２図はこの発明の一実施例による固体レーザ
を示す横断面図，及び縦断面図、第３図は本実施例の固
体レーザにおける励起光の動きを従来の固体レーザの励
起光の動きと対比して示した図、第４図，第５図，第６
図はそれぞれ本発明の他の実施例の要部を示す図、第７
図は従来の固体レーザの構成を示す図である。 １はLD、11はマウント、12は励起光、２はレーザ媒質、
20はスラブ型レーザ媒質、30はPR（部分反射）ミラー、
４はTR（全反射）膜、40はTRミラー、６はホルダ、61は
充填物、７は光ガイド、71は反射面、８は冷却器、81は
放熱フィン、９はレーザ出力。 なお図中同一符号は同一又は相当部分を示す。1 and 2 are a cross-sectional view and a vertical cross-sectional view showing a solid-state laser according to an embodiment of the present invention. FIG. 3 shows the movement of pump light in the solid-state laser according to the present embodiment. Figures 4, 5, and 6 shown in comparison with the movement of light
The figures show the main parts of another embodiment of the present invention.
FIG. 1 is a diagram showing a configuration of a conventional solid-state laser. 1 is an LD, 11 is a mount, 12 is excitation light, 2 is a laser medium,
20 is a slab type laser medium, 30 is a PR (partial reflection) mirror,
4 is a TR (total reflection) film, 40 is a TR mirror, 6 is a holder, 61 is a filler, 7 is a light guide, 71 is a reflection surface, 8 is a cooler, 81 is a radiation fin, and 9 is a laser output. In the drawings, the same reference numerals indicate the same or corresponding parts.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 名井 康人 兵庫県尼崎市塚口本町８丁目１番１号 三菱電機株式会社応用機器研究所内 (72)発明者 青柳 利隆 兵庫県伊丹市瑞原４丁目１番地 三菱電 機株式会社エル・エス・アイ研究所内 (56)参考文献 特開 平１−100983（ＪＰ，Ａ) ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Yasuhito Nai 8-1-1 Tsukaguchi Honcho, Amagasaki-shi, Hyogo Mitsubishi Electric Corporation Applied Equipment Research Laboratory (72) Inventor Toshitaka Aoyagi 4-chome, Mizuhara, Itami-shi, Hyogo 1st Mitsubishi Electric Corporation LSI Laboratory (56) References JP-A-1-100983 (JP, A)

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】固体レーザ媒質を半導体レーザによって励
起する固体レーザにおいて、 上記半導体レーザの光を上記固体レーザ媒質に対して斜
めに入射させる光ガイドを備え、 上記光ガイドが、壁面反射による中空光ガイドであるこ
とを特徴とする固体レーザ。1. A solid-state laser that excites a solid-state laser medium with a semiconductor laser, comprising: a light guide for causing light of the semiconductor laser to be obliquely incident on the solid-state laser medium; A solid-state laser, which is a guide. 【請求項２】固体レーザ媒質を半導体レーザによって励
起する固体レーザにおいて、 上記半導体レーザの光を導波し、導波した光を上記固体
レーザ媒質に対して斜めに直接入射させる光ファイバを
備えたことを特徴とする固体レーザ。2. A solid-state laser for exciting a solid-state laser medium with a semiconductor laser, comprising: an optical fiber that guides the light of the semiconductor laser and makes the guided light obliquely directly enter the solid-state laser medium. A solid state laser characterized by the above.
JP63217621A 1988-02-10 1988-08-31 Solid state laser Expired - Fee Related JP2706098B2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP63217621A JP2706098B2 (en) 1988-08-31 1988-08-31 Solid state laser
GB8902856A GB2215906B (en) 1988-02-10 1989-02-09 Laser device
US07/308,586 US4924474A (en) 1988-02-10 1989-02-10 Laser device with high oscillation efficiency
DE3943722A DE3943722C2 (en) 1988-02-10 1989-02-10 Solid-state laser with light emitting semiconductor devices
DE3904039A DE3904039C2 (en) 1988-02-10 1989-02-10 Laser array
GB9202756A GB2253515B (en) 1988-02-10 1992-02-10 Laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63217621A JP2706098B2 (en) 1988-08-31 1988-08-31 Solid state laser

Publications (2)

Publication Number Publication Date
JPH0265283A JPH0265283A (en) 1990-03-05
JP2706098B2 true JP2706098B2 (en) 1998-01-28

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JP63217621A Expired - Fee Related JP2706098B2 (en) 1988-02-10 1988-08-31 Solid state laser

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4969155A (en) * 1989-10-10 1990-11-06 Hughes Aircraft Company Integrating laser diode pumped laser apparatus
WO1999031772A1 (en) * 1997-12-15 1999-06-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser-excited solid-state laser device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01100983A (en) * 1987-10-14 1989-04-19 Komatsu Ltd Laser rod excitation device of solid state laser

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