JP2664392B2 - Laser device - Google Patents
Laser deviceInfo
- Publication number
- JP2664392B2 JP2664392B2 JP63029205A JP2920588A JP2664392B2 JP 2664392 B2 JP2664392 B2 JP 2664392B2 JP 63029205 A JP63029205 A JP 63029205A JP 2920588 A JP2920588 A JP 2920588A JP 2664392 B2 JP2664392 B2 JP 2664392B2
- Authority
- JP
- Japan
- Prior art keywords
- laser medium
- laser
- reflector
- light
- laser device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/0915—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light
- H01S3/0933—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of a semiconductor, e.g. light emitting diode
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明はLD（レーザダイオード）もしくはLED（発
光ダイオード）等、半導体素子によって励起されるレー
ザに関し、特にその励起と冷却の構造の改善に関するも
のである。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a laser pumped by a semiconductor device such as an LD (laser diode) or an LED (light emitting diode), and more particularly to an improvement in the pumping and cooling structure thereof. It is.
〔従来の技術〕 第５図は例えばU.S.Patent3,624,545に示された従来
のLD励起固体レーザの構造を示す図であり、図において
１はLD、２はレーザ媒質、例えばYAGの丸棒、3,4はレー
ザ媒質２の端面に形成された全反射膜と部分反射膜、５
は反射鏡である。[Prior Art] FIG. 5 is a diagram showing the structure of a conventional LD-pumped solid-state laser shown in, for example, US Patent 3,624,545. In FIG. 5, 1 is an LD, 2 is a laser medium, for example, a YAG round bar, 4 is a total reflection film and a partial reflection film formed on the end face of the laser medium 2;
Is a reflecting mirror.
LD1から出射された励起光はレーザ媒質２に入射し吸
収される。吸収されずに通過した光は反射鏡５によって
反射され、再びレーザ媒質２に入射する。吸収された光
のエネルギーは部分反射膜４と全反射膜３に囲まれて成
る光共振器によって発振状態となり、一部がレーザ光と
なり外部へ放出される。The excitation light emitted from the LD 1 enters the laser medium 2 and is absorbed. The light that has passed without being absorbed is reflected by the reflecting mirror 5 and enters the laser medium 2 again. The energy of the absorbed light is oscillated by the optical resonator surrounded by the partial reflection film 4 and the total reflection film 3, and a part of the energy is emitted as laser light to the outside.
LD1の光に対するレーザ媒質２の吸収率は波長依存性
が大きく、例えば808.5nmに対しては0.75mm-1,802nmに
対しては0.1mm-1である。このためレーザ媒質に有効に
光を吸収させるためにはLD1のスペクトルを精密にコン
トロールすることが必要であった。The absorptance of the laser medium 2 for the light of the LD 1 has a large wavelength dependency, for example, 0.75 mm -1 for 808.5 nm and 0.1 mm -1 for 802 nm. For this reason, it was necessary to precisely control the spectrum of LD1 in order for the laser medium to effectively absorb light.
従来のレーザ装置は以上のように構成されているの
で、レーザ媒質にレーザダイオードの光を完全に吸収さ
せるのが難しく、従ってレーザ発振のエネルギー効率が
低いという問題点があった。Since the conventional laser device is configured as described above, it is difficult to completely absorb the light of the laser diode in the laser medium, and there is a problem that the energy efficiency of laser oscillation is low.
また、従来のレーザ装置はレーザ媒質の放熱が不十分
で、出力の増大とともにビームの質が劣化するという問
題点もある。Further, the conventional laser device has a problem that the heat radiation of the laser medium is insufficient, and the beam quality is degraded as the output increases.
この発明は上記のような問題点を解消するためになさ
れたもので、発振のエネルギー効率を向上できるレーザ
装置を得ることを目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and has as its object to obtain a laser device capable of improving the energy efficiency of oscillation.
この発明に係るレーザ装置はレーザ媒質の光軸に添う
外面のほとんどを反射体で覆い、その微小部分をLD光の
入射部分とし、かつ、上記反射体の反射面を光学的に非
平滑としたものである。The laser device according to the present invention covers most of the outer surface along the optical axis of the laser medium with a reflector, makes a minute portion thereof an LD light incidence portion, and optically non-smoothes the reflection surface of the reflector. Things.
この発明においては、レーザ媒質の光軸に添う外面の
ほとんどを反射体で覆い、その微小部分をLD光の入射部
分としたから、LDによる励起光をとじこめて、レーザ媒
質に効率よく吸収させるため、発振のエネルギー効率が
向上する。また、上記反射体の反射面を光学的に非平滑
としているので、反射面内での寄生発振を防止できる。In the present invention, most of the outer surface along the optical axis of the laser medium is covered with a reflector, and a minute portion thereof is made into an incident part of LD light, so that the pumping light by the LD is absorbed and efficiently absorbed by the laser medium. The energy efficiency of oscillation is improved. In addition, since the reflection surface of the reflector is optically non-smooth, parasitic oscillation in the reflection surface can be prevented.
以下、この発明の一実施例を第１図について説明す
る。（ａ）が縦断面図、（ｂ）が横断面図である。図に
おいて50は反射体、51は開孔、52反射面、６は透明接着
剤、７は放熱フィン、11はLD1の光を示す。開孔51の内
面は例えば金メッキされて反射性となっている。反射面
52は多層膜コーティングまたは金等の金属メッキにより
構成されている。An embodiment of the present invention will be described below with reference to FIG. (A) is a longitudinal sectional view, (b) is a transverse sectional view. In the figure, 50 is a reflector, 51 is an opening, 52 is a reflecting surface, 6 is a transparent adhesive, 7 is a radiating fin, and 11 is light of LD1. The inner surface of the opening 51 is, for example, gold-plated and reflective. Reflective surface
Reference numeral 52 denotes a multilayer film coating or metal plating such as gold.
LD1からの光11は反射体50の一部に設けられた開孔51
からレーザ媒質２に入射し、反射体50の内側の反射面52
で多重回反射されるうちに完全にレーザ媒質２に吸収さ
れ、これを光励起する。The light 11 from the LD 1 is transmitted through an aperture 51 provided in a part of the reflector 50.
From the laser medium 2 to the reflection surface 52 inside the reflector 50.
While being reflected multiple times at, it is completely absorbed by the laser medium 2 and is optically excited.
レーザ媒質２と反射面52の間にある光学的に透明な透
明接着剤６の薄い層はLDの光を有効に透過させながら、
熱的にレーザ媒質２と反射体50を結合しレーザ媒質は有
効に冷却される。The thin layer of the optically transparent transparent adhesive 6 between the laser medium 2 and the reflecting surface 52, while effectively transmitting the light of the LD,
By thermally coupling the laser medium 2 and the reflector 50, the laser medium is effectively cooled.
また反射面52はスジをつける，荒らし面にする等の手
段によって、光学的に非平滑にされており、これにより
反射面52内での寄生発振を防止している。The reflection surface 52 is made optically non-smooth by means such as a streak or a roughened surface, thereby preventing parasitic oscillation within the reflection surface 52.
このように本実施例では、レーザ媒質２の周囲を反射
体50で囲み、レーザ光は該反射体50の一部に設けられた
開孔51からレーザ媒質２へ入射するようにしてLD1の光
がその波長に最適値から多少のずれがあっても、ほぼ完
全にレーザ媒質２に吸収されるようにしたから、レーザ
発振のエネルギー効率を大幅に向上できる効果がある。
さらに本実施例では反射体の外側に放熱構造を設けレー
ザ媒質２で発生した熱が接着剤６→反射体50→放熱フィ
ン７を経て効率良く放熱されてレーザ媒質２が有効に冷
却されるようにしたから、出力の増大とともに生ずるビ
ームの品質劣化を防ぎ、ビームの品質を向上することが
できる。As described above, in this embodiment, the periphery of the laser medium 2 is surrounded by the reflector 50, and the laser light enters the laser medium 2 through the opening 51 provided in a part of the reflector 50 so that the light of the LD 1 is emitted. However, even if the wavelength slightly deviates from the optimum value, the laser medium 2 absorbs the wavelength almost completely, so that there is an effect that the energy efficiency of laser oscillation can be greatly improved.
Further, in this embodiment, a heat radiation structure is provided outside the reflector so that the heat generated in the laser medium 2 is efficiently radiated through the adhesive 6 → the reflector 50 → the radiation fins 7 so that the laser medium 2 is effectively cooled. Therefore, it is possible to prevent the beam quality from deteriorating due to the increase in output, and to improve the beam quality.
なお、上記実施例では一方向からLD光を入射する例を
示しが、入射方向を180゜,120゜等毎に設けると、より
対称性の優れたビームが得られる効果がある。第２図は
入射方向を120゜毎に設けた実施例を示す図である。In the above embodiment, an example in which LD light is incident from one direction is shown. However, providing the incident direction at every 180 °, 120 ° or the like has an effect of obtaining a beam with more excellent symmetry. FIG. 2 is a view showing an embodiment in which the incident direction is provided every 120 °.
また、上記実施例はいずれもレーザ媒質の両端に部分
反射膜４と全反射膜３が形成され、光共振器を形成する
ものを示したが、両方あるいはいずれかの端面を反射防
止膜とし、外部に設置したミラーによって光共振器を構
成し得ることは言うまでもない。In each of the above embodiments, the partial reflection film 4 and the total reflection film 3 are formed on both ends of the laser medium to form an optical resonator. However, both or any of the end faces are used as antireflection films. It goes without saying that the optical resonator can be constituted by a mirror installed outside.
なお、上記実施例は光励起源としてLDを示したが、LE
D（発光ダイオード）も用いることが可能である。In the above embodiment, the LD is shown as the light excitation source.
D (light emitting diode) can also be used.
以上のように、この発明によれば、レーザ媒質の外面
を反射体で覆い、反射体の一部の隙間部分からLDの励起
光を入射する構成とし、かつ上記反射体の反射面を光学
的に非平滑としたので、エネルギー効率が高く、また反
射面内での寄生発振を防止できる光励起式のレーザ装置
が得られる効果がある。As described above, according to the present invention, the outer surface of the laser medium is covered with the reflector, the excitation light of the LD is made to enter from a gap part of the reflector, and the reflection surface of the reflector is optically Therefore, there is an effect that a photo-excitation type laser device which has high energy efficiency and can prevent parasitic oscillation in the reflection surface can be obtained.
第１図はこの発明の一実施例によるレーザ装置の縦断面
と横断面を示す構成図、第２図はこの発明の他の実施例
によるレーザ装置を示す図、第３図は従来のレーザ装置
の構成を示す図である。 １はLD（レーザダイオード）、２はレーザ媒質、50は反
射体、52は反射面、51は開孔、６は透明接着剤、７は放
熱フィン。 なお図中同一符号は同一又は相当部分を示す。FIG. 1 is a structural view showing a longitudinal section and a transverse section of a laser device according to one embodiment of the present invention, FIG. 2 is a diagram showing a laser device according to another embodiment of the present invention, and FIG. FIG. 3 is a diagram showing the configuration of FIG. 1 is an LD (laser diode), 2 is a laser medium, 50 is a reflector, 52 is a reflection surface, 51 is an opening, 6 is a transparent adhesive, and 7 is a radiation fin. In the drawings, the same reference numerals indicate the same or corresponding parts.
フロントページの続き (72)発明者 久場 一樹 兵庫県尼崎市塚口本町８丁目１番１号 三菱電機株式会社応用機器研究所内 (72)発明者 生和 義人 兵庫県伊丹市瑞原４丁目１番地 三菱電 機株式会社エル・エス・アイ研究所内 (56)参考文献 特開 昭48−95792（ＪＰ，Ａ)Continued on the front page (72) Inventor Kazuki Kuba 8-1-1, Tsukaguchi-Honcho, Amagasaki-shi, Hyogo Mitsubishi Electric Corporation Applied Equipment Research Laboratory (72) Inventor Yoshito Ikuwa 4-1-1, Mizuhara, Itami-shi, Hyogo Mitsubishi Electric (56) References JP-A-48-95792 (JP, A)
Claims (1)
するレーザ装置において、 上記レーザ媒質の光軸に添う外周を囲む光学的に非平滑
にされた反射面を備えた反射体と、 上記半導体発光素子の光を上記レーザ媒質に入射させる
ための上記反射体の一部に設けられた開孔とを備えたこ
とを特徴とするレーザ装置。1. A laser device for exciting a laser medium with a semiconductor light emitting element, comprising: a reflector having an optically non-smooth reflecting surface surrounding an outer periphery along an optical axis of the laser medium; A hole provided in a part of the reflector for allowing the light to enter the laser medium.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63029205A JP2664392B2 (en) | 1988-02-10 | 1988-02-10 | Laser device |
| GB8902856A GB2215906B (en) | 1988-02-10 | 1989-02-09 | Laser device |
| US07/308,586 US4924474A (en) | 1988-02-10 | 1989-02-10 | Laser device with high oscillation efficiency |
| DE3943722A DE3943722C2 (en) | 1988-02-10 | 1989-02-10 | Solid-state laser with light emitting semiconductor devices |
| DE3904039A DE3904039C2 (en) | 1988-02-10 | 1989-02-10 | Laser array |
| GB9202756A GB2253515B (en) | 1988-02-10 | 1992-02-10 | Laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63029205A JP2664392B2 (en) | 1988-02-10 | 1988-02-10 | Laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01205484A JPH01205484A (en) | 1989-08-17 |
| JP2664392B2 true JP2664392B2 (en) | 1997-10-15 |
Family
ID=12269692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63029205A Expired - Lifetime JP2664392B2 (en) | 1988-02-10 | 1988-02-10 | Laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2664392B2 (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02130882A (en) * | 1988-11-11 | 1990-05-18 | Hitachi Ltd | Solid state laser device |
| JPH03116793A (en) * | 1989-09-28 | 1991-05-17 | Hamamatsu Photonics Kk | Solid state laser producing device |
| JPH0685356A (en) * | 1992-08-17 | 1994-03-25 | Ishikawajima Harima Heavy Ind Co Ltd | Laser oscillator |
| JPH06252473A (en) * | 1993-02-26 | 1994-09-09 | Nec Corp | Solid-state laser rod and semiconductor laser excitated solid-state laser using the rod |
| JPH06283783A (en) * | 1993-03-29 | 1994-10-07 | Nec Corp | Laser rod cooling mechanism and cooling sleeve |
| JPH07335954A (en) * | 1994-06-15 | 1995-12-22 | Nec Corp | Laser rod cooling mechanism and cooling sleeve |
| DE102005004131B4 (en) * | 2005-01-28 | 2007-01-04 | Langhans, Lutz, Dr. | Solid-state laser with compensation of the thermo-optical effects |
| WO2007074400A2 (en) | 2005-12-28 | 2007-07-05 | Kilolambda Technologies Ltd. | Diode-pumped cavity |
| WO2010145855A1 (en) | 2009-06-15 | 2010-12-23 | Pantec Biosolutions Ag | Monolithic, side pumped solid-state laser and method for operating the same |
| CN102484346B (en) * | 2009-06-15 | 2015-04-08 | Pan技术生物解决方案股份公司 | A monolithic, side pumped solid-state laser and applications thereof |
| EP2443707B1 (en) * | 2009-06-15 | 2015-09-30 | Pantec Biosolutions AG | A monolithic, side pumped solid-state laser and applications thereof |
| GB201020008D0 (en) * | 2010-11-25 | 2011-01-12 | Selex Galileo Ltd | Laser system and method of operation |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4895792A (en) * | 1972-03-21 | 1973-12-07 |
-
1988
- 1988-02-10 JP JP63029205A patent/JP2664392B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01205484A (en) | 1989-08-17 |
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