JPH0292807A - Production of oxide superconductor - Google Patents
Production of oxide superconductorInfo
- Publication number
- JPH0292807A JPH0292807A JP63242823A JP24282388A JPH0292807A JP H0292807 A JPH0292807 A JP H0292807A JP 63242823 A JP63242823 A JP 63242823A JP 24282388 A JP24282388 A JP 24282388A JP H0292807 A JPH0292807 A JP H0292807A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- oxide superconductor
- substrate
- slits
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002887 superconductor Substances 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000010409 thin film Substances 0.000 claims abstract description 56
- 238000010030 laminating Methods 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 32
- 238000010438 heat treatment Methods 0.000 claims description 21
- 238000000034 method Methods 0.000 abstract description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 6
- 239000001301 oxygen Substances 0.000 abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 abstract description 6
- 229910003460 diamond Inorganic materials 0.000 abstract description 4
- 239000010432 diamond Substances 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- 229910045601 alloy Inorganic materials 0.000 abstract description 3
- 239000000956 alloy Substances 0.000 abstract description 3
- 239000000919 ceramic Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 101700004678 SLIT3 Proteins 0.000 description 9
- 102100027339 Slit homolog 3 protein Human genes 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 5
- 230000000737 periodic effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229910017888 Cu—P Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910002370 SrTiO3 Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
Landscapes
- Oxygen, Ozone, And Oxides In General (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
Description
【発明の詳細な説明】
「産業上の利用分野」
本発明は、基板の表面に酸化物超電導薄膜を積層形成し
てなり、ジョセフソン素子などの超電導回路、磁気シー
ルド材、電力輸送用等に使用される酸化物超電導体の製
造方法に関するものである。[Detailed Description of the Invention] "Industrial Application Field" The present invention is made by laminating an oxide superconducting thin film on the surface of a substrate, and is used in superconducting circuits such as Josephson elements, magnetic shielding materials, power transportation, etc. The present invention relates to a method for manufacturing the oxide superconductor used.
「従来の技術」
最近に至り、常電導状態から超電導状態へ遷移する臨界
温度（Ｔｃ）が液体窒素温度を超える値を示す酸化物超
電導体が種々発見されている。この種の酸化物超電導体
は、一般式Ａ −Ｂ −Ｃｕ−０（ただしＡは、Ｙ、Ｓ
ｃ、Ｌａ、Ｙｂ、Ｅｒ、Ｅｕ、Ｈｏ、Ｄｙ等の周期律表
１１１ａ族元素の１種以上を示し、Ｂは、Ｍｇ。"Prior Art" Recently, various oxide superconductors have been discovered whose critical temperature (Tc) for transitioning from a normal conducting state to a superconducting state exceeds the liquid nitrogen temperature. This type of oxide superconductor has the general formula A-B-Cu-0 (where A is Y, S
B represents Mg.
Ｃａ、Ｓｒ、Ｂａ等の周期律表Ｈａ族元素の１種以上を
示す。）で示される酸化物であり、液体ヘリウムで冷却
することが必要であった従来の合金系あるいは金属間化
合物系の超電導体と比較して格段に有利な冷却条件で使
用できることから、実用上極めて有望な超電導材料とし
て研究がなされている。One or more elements of the Ha group of the periodic table, such as Ca, Sr, and Ba. ), and can be used under much more advantageous cooling conditions than conventional alloy-based or intermetallic compound-based superconductors, which require cooling with liquid helium, making it extremely useful in practice. It is being studied as a promising superconducting material.
そして、このような酸化物超電導材料を用いて基板上に
超電導回路を形成するには、セラミックスあるいは金属
の基板の表面に、スパッタリング法などの薄膜形成手段
を用いて酸化物超電導材料からなる超電導薄膜を形成す
る。スパッタリング法などの薄膜形成手段を用いて形成
された薄膜は、非晶質状態（アモルファス状態）の酸化
物超電導体からなり、そのままの状態では超電導性を示
さない。このため、超電導性を有する酸化物超電導体を
得るには、基板の表面に酸化物超電導薄膜を形成した後
に、酸素含有雰囲気中８００℃以上の熱処理を施す必要
がある。In order to form a superconducting circuit on a substrate using such an oxide superconducting material, a superconducting thin film made of an oxide superconducting material is formed on the surface of a ceramic or metal substrate using a thin film forming method such as sputtering. form. A thin film formed using a thin film forming method such as a sputtering method is made of an oxide superconductor in an amorphous state, and does not exhibit superconductivity in that state. For this reason, in order to obtain an oxide superconductor having superconductivity, it is necessary to form an oxide superconducting thin film on the surface of a substrate and then perform heat treatment at 800° C. or higher in an oxygen-containing atmosphere.
「発明が解決しようとする課題」
しかしながら、超電導薄膜を形成した基板に、８００℃
以上の温度で熱処理を施すと、基板の材料と超電導薄膜
との熱膨張率の差によって応力が加わって、超電導薄膜
に割れが発生し、この割れによって臨界電流密度（Ｊｃ
）などの超電導特性が劣化してしまう問題があった。``Problem to be solved by the invention'' However, when a substrate on which a superconducting thin film is formed is heated to 800°C,
When heat treatment is performed at a temperature above, stress is applied due to the difference in thermal expansion coefficient between the substrate material and the superconducting thin film, causing cracks in the superconducting thin film, and these cracks cause critical current density (Jc
), there was a problem of deterioration of superconducting properties.
また、この割れと通電方向の関係は、第６図の図中符号
Ａで示すように、基板Ｃ上の超電導薄膜りに、通電方向
Ｅに沿う方向に割れが生じた場合には超電導薄膜りの全
体としては損失増加がほとんどないが、通電方向Ｅに交
差する方向、特に図中符号Ｂで示すように通電方向Ｅと
直交する方向に割れが発生した場合には、超電導薄膜り
の臨界電流密度が著しく低下してしまう。Furthermore, the relationship between this crack and the direction of current flow is as shown by the symbol A in FIG. Overall, there is almost no increase in loss, but if a crack occurs in a direction that intersects the direction of current flow E, especially in a direction perpendicular to the direction of current flow E as shown by the symbol B in the figure, the critical current of the superconducting thin film will increase. The density will drop significantly.
本発明は、上記事情に鑑みてなされたらので、高い臨界
電流密度が得られる高性能の酸化物超電導体を製造する
ことのできる製造方法の提供を目的とする。The present invention was made in view of the above circumstances, and an object of the present invention is to provide a manufacturing method capable of manufacturing a high-performance oxide superconductor that can obtain a high critical current density.
「課題を解決するための手段」
上記目的達成の手段として、本発明は、基板の表面に酸
化物超電導薄膜を積層形成してなる酸化物超電導体の製
造方法であって、基板の表面に酸化物超電導薄膜を積層
形成し、次いでこの酸化物超電導薄膜に、通電方向に沿
ってスリットを形成し、次いで熱処理を施す方法である
。"Means for Solving the Problems" As a means for achieving the above object, the present invention provides a method for manufacturing an oxide superconductor by laminating an oxide superconducting thin film on the surface of a substrate, the method comprising: forming an oxide superconductor on the surface of the substrate; This is a method in which oxide superconducting thin films are laminated, slits are formed in the oxide superconducting thin film along the current direction, and then heat treatment is performed.
「作用 」
基板の表面に酸化物超電導薄膜を積層形成し、この薄膜
に通電方向に沿ってスリットを形成し、薄膜がスリット
部分で通電方向に沿って分列された状態とした後に熱処
理を施すことによって、薄膜と基板との熱膨張率の格差
に起因する応力が加わった時に、スリットに沿って薄膜
に割れを導入することにより、通電方向と交差する方向
の割れの発生を減少させることができる。"Operation" Form a layered oxide superconducting thin film on the surface of the substrate, form slits in this thin film along the direction of current flow, and perform heat treatment after the thin film is divided into arrays along the direction of current flow at the slits. As a result, when stress is applied due to the difference in thermal expansion coefficient between the thin film and the substrate, by introducing cracks into the thin film along the slits, it is possible to reduce the occurrence of cracks in the direction crossing the current direction. can.
「実施例」
第１図は本発明方法の一実施例を説明するための図であ
る。"Example" FIG. 1 is a diagram for explaining an example of the method of the present invention.
この例では、まず、基板１の表面に、スパッタリング法
、ＣＶＤ法、電子ビーム蒸着法、レーザ蒸着法などの薄
膜形成手段を用いて酸化物超電導薄膜２を形成する。基
板ｌの材料としてはＳ ｒＴ ｉＯ５、ＭｇＯ１ＡＬＯ
ｓ、Ｚｒ０１ＹＳＺなどの各種セラミックスやＡｇ、
ＰＬ、 Ａｕやその合金などの金属か好適に使用される
。In this example, first, the oxide superconducting thin film 2 is formed on the surface of the substrate 1 using a thin film forming method such as sputtering, CVD, electron beam evaporation, or laser evaporation. The material of the substrate l is S rT iO5, MgO1ALO.
Various ceramics such as s, Zr01YSZ, Ag,
Metals such as PL, Au, and alloys thereof are preferably used.
また本発明において好適に使用される酸化物超電導薄膜
２の材料としては、一般式Ａ −Ｂ −Ｃｕ−０（ただ
しＡは、Ｙ 、Ｓｃ、Ｉ、ａ、Ｙｂ、Ｅｒ、Ｅｕ、Ｈｏ
、Ｄｙ等の周期律表■ａ族元素の１種以上またはＢｉな
どの周期率表ｖｂ族元素の■種以上またはＴＩなどの周
期率表ｍｂ族元素の１種以上を示し、Ｂは、Ｍｇ。Further, the material of the oxide superconducting thin film 2 suitably used in the present invention has the general formula A-B-Cu-0 (where A is Y, Sc, I, a, Yb, Er, Eu, Ho
, represents one or more elements of group ■A of the periodic table such as Dy, or one or more elements of group VB of the periodic table such as Bi, or one or more elements of group M of the periodic table such as TI, and B is Mg. .
Ｃａ、Ｓｒ、Ｂａ等の周期律表■ａ族元素の１種以上を
示す。）などの酸化物超電導体であり、例えば、Ｙ ＋
ＢａｚＣｕ、０ｘＳＢ ｉｔｓ ｒＩＣａ、Ｃｕ３０ｘ
（Ｂ ｉ−Ｓ ｒＣａ−Ｃｕ−Ｐ ｂ−０系を含む）
、ＴｌｔｃａｔＢａｌｃｕｓｏｘなどが好適に使用され
る。Indicates one or more elements of group Ⅰa of the periodic table, such as Ca, Sr, and Ba. ), for example, Y +
BazCu, 0xSB its rICa, Cu30x
(Including B i-S rCa-Cu-P b-0 system)
, TltcatBalcusox, etc. are preferably used.
基板！の表面に形成する酸化物超電導薄膜２の厚さは、
酸化物超電導体の使用目的や薄膜形成手段の成膜速度な
どの各条件により適宜に選択され、例えば基板１の表面
に’ｉ ＩＢ ａｔ ＣＬｌｓ Ｏｘの酸化物超電導薄
膜をスパッタリング法で形成する場合の膜厚は、ｔｏｏ
ｏｏ人程度に設定される。substrate! The thickness of the oxide superconducting thin film 2 formed on the surface of
It is selected as appropriate depending on various conditions such as the purpose of use of the oxide superconductor and the film formation rate of the thin film forming means. The film thickness is too
It is set to about oo people.
次いで、酸化物超電導薄膜２に、複数本の直線状のスリ
ット３を形成する。このスリット３は、通電方向Ｅに沿
って形成され、またスリット３の深さは、酸化物超電導
薄膜２の厚さ全部でも一部の深さでも良い。このスリッ
ト３の形成方法としては、基板Ｉの表面に成膜された酸
化物超電導薄膜２を、ダイヤモンド針や超硬合金針で切
削する方法が好適に使用される。Next, a plurality of linear slits 3 are formed in the oxide superconducting thin film 2. This slit 3 is formed along the current direction E, and the depth of the slit 3 may be the entire thickness of the oxide superconducting thin film 2 or a part thereof. As a method for forming this slit 3, a method of cutting the oxide superconducting thin film 2 formed on the surface of the substrate I with a diamond needle or a cemented carbide needle is preferably used.
次いでこの基板ｌを、酸素含有雰囲気中において熱処理
を施す。この熱処理条件は、酸化物超電導薄膜の材料に
よって適宜に選択されるが、薄膜材料としてＹ＋Ｂａｔ
ＣｕｓＯｘを用いる場合には８５０〜９００℃で数時間
程度、Ｂ ｉｚｓ ｒｔｃ ａｔｃ ｕｓｏ Ｘの場合
には８３０〜９００℃で数時間程度、また、ＴｉｔＣａ
ｔ Ｂ ａｔ Ｃｕｓ ＯＸの場合には８５０〜９００
℃で数時間程度の熱処理を施すのが望、ましい。Next, this substrate 1 is subjected to heat treatment in an oxygen-containing atmosphere. The heat treatment conditions are appropriately selected depending on the material of the oxide superconducting thin film.
When CusOx is used, it is heated at 850 to 900°C for about several hours, and when Bizs rtc atcuso X is used, it is heated at 830 to 900°C for about several hours.
850-900 in case of t B at Cus OX
It is desirable to perform a heat treatment at a temperature of about several hours.
この熱処理によって、酸化物超電導薄膜２の結晶構造が
非晶質状態から超電導性を有する結晶質に変態し、基板
ｌの表面に超電導性を有する酸化物超電導薄膜が形成さ
れた酸化物超電導体が作成される。Through this heat treatment, the crystal structure of the oxide superconducting thin film 2 is transformed from an amorphous state to a crystalline state having superconductivity, and an oxide superconductor with an oxide superconducting thin film having superconductivity formed on the surface of the substrate l is formed. Created.
この熱処理時には、酸化物超電導薄膜２がスリット３の
部分で通電方向Ｅに沿って分列された状態で形成されて
いるために、酸化物超電導薄膜２と基板ｌとの熱膨張率
の格差に起因する応力が加わった時に、スリット３に沿
って酸化物超電導薄膜２に割れを導入することにより、
通電方向Ｅと交差する方向の割れの発生を減少させるこ
とができる。During this heat treatment, since the oxide superconducting thin film 2 is formed in a divided state along the current conduction direction E at the slit 3, the difference in thermal expansion coefficient between the oxide superconducting thin film 2 and the substrate l is caused. By introducing cracks into the oxide superconducting thin film 2 along the slit 3 when the resulting stress is applied,
The occurrence of cracks in the direction intersecting the current direction E can be reduced.
したがって、この例による酸化物超電導体の製造方法で
は、熱処理時に発生する割れによる臨界電流密度の損失
が少なくなり、高い臨界電流密度を有する高性能の酸化
物超電導体を得ることができる。Therefore, in the method for manufacturing an oxide superconductor according to this example, the loss of critical current density due to cracks generated during heat treatment is reduced, and a high-performance oxide superconductor having a high critical current density can be obtained.
なお、先の例では、酸化物超電導薄膜２に、通電方向Ｅ
に沿って直線状のスリット３を形成したが、スリット３
の形状はこれに限定されることなく、第２図ないし第４
図に示すような形状としても良い。In addition, in the previous example, the oxide superconducting thin film 2 is energized in the direction E.
A linear slit 3 was formed along the slit 3.
The shape of
The shape may be as shown in the figure.
第２図は、スリットの第１の変形例を示す図であって、
この例では、酸化物超電導薄膜２に、通電方向Ｅに沿っ
て矩形波形のスリット４を複数本形成し、熱処理を施し
て酸化物超電導体を作成する。FIG. 2 is a diagram showing a first modification of the slit,
In this example, a plurality of rectangular waveform slits 4 are formed in the oxide superconducting thin film 2 along the current direction E, and a heat treatment is performed to create an oxide superconductor.
また第３図は、スリットの第２の変形例を示す図であっ
て、この例では、酸化物超電導薄膜２に、通電方向Ｅに
沿って波形のスリット５を複数本形成し、熱処理を施し
て酸化物超電導体を作成する。FIG. 3 is a diagram showing a second modification of the slit. In this example, a plurality of wave-shaped slits 5 are formed in the oxide superconducting thin film 2 along the current direction E, and heat treatment is performed. to create an oxide superconductor.
また第４図は、スリットの第３の変形例を示を図であっ
て、この例では、酸化物超電導薄膜２に、通電方向Ｅに
沿って半円を結んでなる半円波形のスリット６を複数本
形成し、熱処理を施して酸化物超電導体を作成する。FIG. 4 shows a third modification of the slit. In this example, the slit 6 has a semicircular waveform formed by connecting semicircles along the current direction E in the oxide superconducting thin film 2. A plurality of oxide superconductors are formed and heat treated to create an oxide superconductor.
これら各変形例においては、各溝スリット４゜５．６を
曲線で形成したことにより、第１図に示す直線状のスリ
ット３に比べ、熱処理を施す際に酸化物超電導薄膜２の
通電方向Ｅと直交する方向の熱歪をスリット４．５．６
で吸収緩和することができ、直線状のスリット３に比べ
、通電方向Ｅと直交する方向に沿う割れの発生を少なく
することができる。In each of these modified examples, since each groove slit 4°5.6 is formed in a curved line, compared to the linear slit 3 shown in FIG. The thermal strain in the direction perpendicular to the slit 4.5.6
Therefore, compared to the linear slit 3, the occurrence of cracks in the direction perpendicular to the current direction E can be reduced.
以下、本発明方法の製造例を示し、本発明の効果を明確
化する。Hereinafter, production examples of the method of the present invention will be shown to clarify the effects of the present invention.
（製造例り
厚さ０ 、１ ａｍでｌ０Ｉ１１１１１角の５ｒＴｉＯ
ａ基板の表面に、Ｙ ＋Ｂ ａｔＣｕ３０ Ｘなる組成
のＦ（Ｆスパッタリング薄膜を１０時間かけて１μｍ作
成した。次いで、この薄膜に、ダイヤモンド針を用い、
半径１１１１３の半円をつないで半円波形の３本のスリ
ットを形成した。次いで、この基板を酸素気流中で８９
０℃、３時間の熱処理を施して超電導体を作成した。(Manufacturing example: 5rTiO of 10I11111 square with thickness 0 and 1 am.
On the surface of the a substrate, a 1 μm thin film of F (F) having a composition of Y + B atCu30
Three slits with a semicircular waveform were formed by connecting semicircles with a radius of 11,113. Next, this substrate was heated for 89 hours in an oxygen stream.
A superconductor was created by heat treatment at 0° C. for 3 hours.
一方、基板の表面に同様に薄膜を形成し、スリットを形
成せずに熱処理を施して、従来方法の超電導体を作成し
た。On the other hand, a thin film was similarly formed on the surface of the substrate, and heat treatment was performed without forming slits to create a superconductor using the conventional method.
これらの超電導体を液体窒素に浸漬し、臨界電流密度（
Ｊｃ）を測定した。その結果、スリットを形成した超電
導体ではＪｃ＝３ ｘ ｉ Ｏ’ Ａ／ａｍ″と高い値
を示した。また従来方法の超電導体ではＪｃ＝ ｌ ｘ
１０３Ａ／ｃｍ’と低い値となった。These superconductors are immersed in liquid nitrogen, and the critical current density (
Jc) was measured. As a result, the superconductor with slits showed a high value of Jc = 3 x i O'A/am''. In addition, the superconductor using the conventional method showed Jc = l x
The value was as low as 103 A/cm'.
また、これらの超電導体の表面を走査電子顕微ｔ１．１
１察した結果、スリットを形成した超電導体ではスリッ
ト形成方向と直交する方向に殆ど割れが発生していなか
ったが、従来方法の超電導体では無数の割れがＪｃ測定
方向およびそれと直交する方向に発生しているのが観察
された。In addition, the surfaces of these superconductors were examined using a scanning electron microscope (t1.1).
As a result, we found that in the superconductor in which slits were formed, almost no cracks occurred in the direction perpendicular to the direction in which the slits were formed, but in the superconductor prepared using the conventional method, numerous cracks occurred in the Jc measurement direction and in the direction orthogonal to it. was observed doing so.
（製造例２ ）
厚さ０゜１ｍｍで１０ｍｍ角のＭｇＯ製基板の表面に、
Ｂ ｌ！Ｓ ｒｚｃ ａｙｃ ｕｚＯＸなる組成の薄膜
を、電ｊ−ビーム蒸着法により１ビーム４クルージプル
でそれぞれの酸化物をｌＯＯ八づ・っ形成した。次いで
、この薄膜にダイヤモンド針を用いて５本の矩形波形の
スリットを形成した。次いでこの基板を酸素雰囲気中、
８５０℃で１０時間の熱処理を施して超電導体を作成し
た。(Production Example 2) On the surface of a 10 mm square MgO substrate with a thickness of 0°1 mm,
Bl! A thin film having a composition of S rzc ayc uzOX was formed by an electric J-beam evaporation method using 1 beam and 4 cruzi pulls of each oxide. Next, five rectangular wave-shaped slits were formed in this thin film using a diamond needle. Next, this substrate was placed in an oxygen atmosphere.
A superconductor was produced by heat treatment at 850° C. for 10 hours.
一方、基板の表面に同様に薄膜を形成し、スリットを形
成せずに熱処理を施して、従来方法の超電導体を作成し
た。On the other hand, a thin film was similarly formed on the surface of the substrate, and heat treatment was performed without forming slits to create a superconductor using the conventional method.
これらの超電導体のＪｃを先の製造例のものと同様に測
定した。その結果、スリット・を形成した超電導体では
Ｊ ｃ＝ １０ ’ Ａ／ｃ＋ｎ’を示したが、従来方
法の超電導体ではＪ ｃ＝ Ｉ Ｏ’ Ａ／ｃｍ’と低
い値であった。The Jc of these superconductors was measured in the same manner as in the previous manufacturing example. As a result, the superconductor in which the slits were formed showed J c = 10'A/c+n', but the superconductor prepared by the conventional method showed a low value of J c = I O'A/cm'.
（製造例３ ）
厚さ０ 、１ ＋ｎｍで１０ｍｍ角のＳｒＴｉＯ３製基
板の表面に、Ｂ ａｓ ＣＬ１２０ ｓとＣａＯとＴ
ｔｗｏ ｆｆを３ターゲツトとしてイオンビームスパッ
タを行って薄膜を形成した。次いでこの薄膜にダイヤモ
ンド針を用いて、第５図に示すように５本の矩形波形の
スリットを形成した。次いで、酸素雰囲気中、８８０℃
で１時間の熱処理を施して、基板の表面に’Ｉ’１ｌＢ
ａｔＣａｔ Ｃ１１３０ｘなる組成の超電導薄膜を生成
させて超電導体を作成した。(Manufacturing Example 3) On the surface of a 10 mm square SrTiO3 substrate with a thickness of 0 and 1 + nm, B as CL120s, CaO and T
Ion beam sputtering was performed using two off as three targets to form a thin film. Next, using a diamond needle, five rectangular wave-shaped slits were formed in this thin film as shown in FIG. Then, in an oxygen atmosphere at 880°C
Heat treatment was performed for 1 hour at
A superconductor was created by producing a superconducting thin film having a composition of atCat C1130x.
得られた超電導体を液体窒素に浸漬し、第５図の図中符
号Ｐ、Ｇで示した基板の縦横２方向のＪｃを測定した。The obtained superconductor was immersed in liquid nitrogen, and Jc in two directions, vertical and horizontal, of the substrate, indicated by symbols P and G in FIG. 5, was measured.
その結果、ＦおよびＧ方向の各Ｊｃ値は殆ど差がなく、
Ｊ ｃ＝ Ｉ Ｏ’Ａ／ａｍ’であった。As a result, there is almost no difference between the Jc values in the F and G directions,
J c = I O'A/am'.
「発明の効果」
以上説明したように、本発明方法では、基板の表面に酸
化物超電導薄膜を積層形成してなる酸化物超電導体を製
造するに際し、基板の表面に酸化物超電導薄膜を積層形
成し、次いで通電方向に沿ってスリットを形成し、次い
で熱処理を施すことにより、熱処理を施す際に酸化物超
電導薄膜と基板との熱膨張率の格差に起因する応力が加
わった時に、スリットに沿って酸化物超電導薄膜に割れ
を導入して、通電方向と交差する方向の割れの発生を減
少させることができるので、熱処理時に発生する割れに
よる臨界電流密度の損失が少なくなり、高い臨界電流密
度を有する高性能の酸化物超電導体を得ることができる
。"Effects of the Invention" As explained above, in the method of the present invention, when manufacturing an oxide superconductor formed by laminating an oxide superconducting thin film on the surface of a substrate, the oxide superconducting thin film is laminated on the surface of the substrate. Then, by forming slits along the current direction and then performing heat treatment, when stress due to the difference in thermal expansion coefficient between the oxide superconducting thin film and the substrate is applied during heat treatment, the slits are formed along the slits. By introducing cracks into the oxide superconducting thin film, it is possible to reduce the occurrence of cracks in the direction that intersects the direction of current flow, which reduces the loss of critical current density due to cracks that occur during heat treatment, making it possible to achieve high critical current density. It is possible to obtain a high-performance oxide superconductor having a high performance.
第１図は本発明方法の一実施例を説明するための図であ
って、基板の表面に成膜された酸化物超電導薄膜にスリ
ットを形成した状態を示す斜視図、第２図ないし第４図
は第１図に示すスリットの変形例を示す斜視図、第５図
は製造例において作成した超電導体の平面図、第６図は
、酸化物超電導薄膜に発生する割れと通電方向の関係を
説明するための斜視図である。
ｌ・・・基板
２・・・酸化物超電導薄膜
３．４，５．６・・・スリット
第１図
第２図FIG. 1 is a diagram for explaining one embodiment of the method of the present invention, and is a perspective view showing a state in which slits are formed in an oxide superconducting thin film formed on the surface of a substrate, and FIGS. The figure is a perspective view showing a modified example of the slit shown in Fig. 1, Fig. 5 is a plan view of a superconductor created in the manufacturing example, and Fig. 6 shows the relationship between cracks that occur in the oxide superconducting thin film and the direction of current flow. It is a perspective view for explaining. l... Substrate 2... Oxide superconducting thin film 3.4, 5.6... Slit Figure 1 Figure 2
Claims (1)
物超電導体の製造方法であって、 基板の表面に酸化物超電導薄膜を積層形成し、次いでこ
の酸化物超電導薄膜に、通電方向に沿ってスリットを形
成し、次いで熱処理を施すことを特徴とする酸化物超電
導体の製造方法。[Claims] A method for producing an oxide superconductor by laminating an oxide superconducting thin film on the surface of a substrate, comprising: forming an oxide superconducting thin film in a laminated manner on the surface of the substrate; A method for producing an oxide superconductor, which comprises forming slits along the direction of current flow and then subjecting them to heat treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63242823A JPH0292807A (en) | 1988-09-28 | 1988-09-28 | Production of oxide superconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63242823A JPH0292807A (en) | 1988-09-28 | 1988-09-28 | Production of oxide superconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0292807A true JPH0292807A (en) | 1990-04-03 |
Family
ID=17094825
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63242823A Pending JPH0292807A (en) | 1988-09-28 | 1988-09-28 | Production of oxide superconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0292807A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001110256A (en) * | 1999-10-14 | 2001-04-20 | Toshiba Corp | Superconductive complex and its manufacture |
-
1988
- 1988-09-28 JP JP63242823A patent/JPH0292807A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001110256A (en) * | 1999-10-14 | 2001-04-20 | Toshiba Corp | Superconductive complex and its manufacture |
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