JPH0292806A - Production of oxide superconductor - Google Patents
Production of oxide superconductorInfo
- Publication number
- JPH0292806A JPH0292806A JP63242822A JP24282288A JPH0292806A JP H0292806 A JPH0292806 A JP H0292806A JP 63242822 A JP63242822 A JP 63242822A JP 24282288 A JP24282288 A JP 24282288A JP H0292806 A JPH0292806 A JP H0292806A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- grooves
- oxide superconductor
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002887 superconductor Substances 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000010409 thin film Substances 0.000 claims abstract description 55
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000010030 laminating Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 58
- 238000010438 heat treatment Methods 0.000 abstract description 19
- 238000004544 sputter deposition Methods 0.000 abstract description 6
- 229910002370 SrTiO3 Inorganic materials 0.000 abstract 1
- 238000005336 cracking Methods 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 230000008016 vaporization Effects 0.000 abstract 1
- 238000009834 vaporization Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 230000000737 periodic effect Effects 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 241000272814 Anser sp. Species 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011121 hardwood Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Landscapes
- Oxygen, Ozone, And Oxides In General (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
Description
【発明の詳細な説明】
「産業上の利用分野」
本発明は、基板の表面に酸化物超電導薄膜を積層形成し
てなり、ジョセフソン素子などの超電導回路、磁気シー
ルド材、電力輸送用等に使用される酸化物超電導体の製
造方法に関するものである。[Detailed Description of the Invention] "Industrial Application Field" The present invention is made by laminating an oxide superconducting thin film on the surface of a substrate, and is used in superconducting circuits such as Josephson elements, magnetic shielding materials, power transportation, etc. The present invention relates to a method for manufacturing the oxide superconductor used.
「従来の技術 １
最近に至り、常電導状態から超電導状態へ遷移する臨界
温度（Ｔ ｃ）が液体窒素温度を超える値を示す酸化物
超電導体が種々発見されている。この種の酸化物超電導
体は、一般式Ａ −Ｂ −Ｃｕ−０（ただしＡは、Ｙ、
Ｓｃ、Ｌａ、Ｙｂ、Ｅｒ、Ｅｕ、Ｈｏ、Ｄｙ等の周期律
表Ｉ［１ａ族元素の１種以上を示し、Ｂは、Ｍｇ。"Prior Art 1" Recently, various oxide superconductors have been discovered whose critical temperature (Tc) for transitioning from a normal conductive state to a superconducting state exceeds the liquid nitrogen temperature.This type of oxide superconductor The body has the general formula A-B-Cu-0 (where A is Y,
Sc, La, Yb, Er, Eu, Ho, Dy, etc. in the periodic table I [represents one or more of group 1a elements, B is Mg.
Ｃａ、Ｓｒ、Ｂａ等の周期律表Ｈａ族元素の１種以上を
示す。）で示される酸化物であり、液体ヘリウムで冷却
することが必要であった従来の合金系あるいは金属間化
合物系の超電導体と比較して格段に有利な冷却条件で使
用できることから、実用上極めて有望な超電導材料とし
て研究がなされている。One or more elements of the Ha group of the periodic table, such as Ca, Sr, and Ba. ), and can be used under much more advantageous cooling conditions than conventional alloy-based or intermetallic compound-based superconductors, which require cooling with liquid helium, making it extremely useful in practice. It is being studied as a promising superconducting material.
そして、このような酸化物超電導材料を用いて基板上に
超電導回路を形成するには、セラミックスあるいは金属
の基板の表面に、スパッタリング法などの薄膜形成手段
を用いて酸化物超電導材料からなる超電導薄膜を形成す
る。スパッタリング法などの薄膜形成手段を用いて形成
された薄膜は、非晶質状ｇ！４（アモルファス状態）の
酸化物超電導体からなり、そのままの状態では超電導性
を示さない。このため、超電導性を有する酸化物超電導
体を得るには、基板の表面に酸化物超電導薄膜を形成し
た後に、酸素含有雰囲気中８００℃以上の熱処理を施す
必要がある。In order to form a superconducting circuit on a substrate using such an oxide superconducting material, a superconducting thin film made of an oxide superconducting material is formed on the surface of a ceramic or metal substrate using a thin film forming method such as sputtering. form. Thin films formed using thin film forming means such as sputtering are amorphous g! 4 (amorphous state), and does not exhibit superconductivity in its original state. For this reason, in order to obtain an oxide superconductor having superconductivity, it is necessary to form an oxide superconducting thin film on the surface of a substrate and then perform heat treatment at 800° C. or higher in an oxygen-containing atmosphere.
「発明が解決しようとする課題」
しかしながら、超電導薄膜を形成した基板に、８００℃
以上の温度で熱処理を施すと、基板の材料と超電導薄膜
との熱膨張率の差によって応力が加わって、超電導薄膜
に割れが発生し、この割れによって臨界電流密度（Ｊｃ
）などの超電導特性が劣化してしまう問題があった。``Problem to be solved by the invention'' However, when a substrate on which a superconducting thin film is formed is heated to 800°C,
When heat treatment is performed at a temperature above, stress is applied due to the difference in thermal expansion coefficient between the substrate material and the superconducting thin film, causing cracks in the superconducting thin film, and these cracks cause critical current density (Jc
), there was a problem of deterioration of superconducting properties.
また、この割れと通電方向の関係は、第６図の図中符号
Ａで示すように、基板Ｃ上の超電導薄膜りに、通電方向
Ｅに沿う方向に割れが生じた場合には超電導薄膜りの全
体としては損失増加がほとんどないが、通電方向Ｅに交
差する方向、特に図中符号Ｂで示すように通電方向Ｅと
直交する方向に生成した割れが発生した場合には、超電
導薄膜りの臨界電流密度が著しく低下してしまう。Furthermore, the relationship between this crack and the direction of current flow is as shown by the symbol A in FIG. Overall, there is almost no increase in loss, but if a crack occurs in a direction that intersects the direction of current flow E, especially in a direction perpendicular to the direction of current flow E as shown by the symbol B in the figure, the loss of the superconducting thin film increases. The critical current density will drop significantly.
本発明は、上記事情に鑑みてなされたもので、高い臨界
電流密度が得られる高性能の酸化物超電導体を製造する
ことのできる製造方法の提供を目的とする。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a manufacturing method capable of manufacturing a high-performance oxide superconductor that can obtain a high critical current density.
「課題を解決するための手段」
上記目的達成の手段として、本発明は、基板の表面に酸
化物超電導薄膜を積層形成してなる酸化物超電導体の製
造方法であって、予め通電方向に沿って溝が形成された
基板の表面に酸化物超電導薄膜を積層形成し、次いで熱
処理を施す方法である。"Means for Solving the Problems" As a means for achieving the above object, the present invention provides a method for manufacturing an oxide superconductor in which an oxide superconductor thin film is laminated on the surface of a substrate. In this method, an oxide superconducting thin film is laminated on the surface of a substrate in which grooves have been formed, and then heat treatment is performed.
「作用 」
予め通電方向に沿って溝が形成された基板の表面に酸化
物超電導体からなる薄膜を積層形成することによって、
薄膜形成時にこの溝部分で薄膜が通電方向に沿って分列
された状態で形成され、この基板に熱処理を施す際に、
薄膜と基板との熱膨張率の格差に起因する応力が加わっ
た時に溝に沿って薄膜に割れを導入することにより、通
電方向と交差する方向の割れの発生を減少させることが
できる。``Operation'' By laminating a thin film made of an oxide superconductor on the surface of a substrate on which grooves have been previously formed along the current direction,
At the time of thin film formation, the thin film is formed in a state where it is divided into rows along the current direction in this groove part, and when heat-treating this substrate,
By introducing cracks into the thin film along the grooves when stress is applied due to the difference in coefficient of thermal expansion between the thin film and the substrate, it is possible to reduce the occurrence of cracks in the direction intersecting the current direction.
「実施例」
第１図および第２図は本発明方法の一実施例を説明する
ための図であって、これらの図中符号１は基板である。Embodiment FIGS. 1 and 2 are diagrams for explaining an embodiment of the method of the present invention, and reference numeral 1 in these figures represents a substrate.
この基板ｌは、所定の通電方向Ｅに沿って直線状の複数
本の溝２を形成してなるしのである。This substrate 1 has a plurality of linear grooves 2 formed along a predetermined current direction E. As shown in FIG.
この基板１の材料としては５ｒＴｉＯｓ、ＭｇＯ。The material of this substrate 1 is 5rTiOs and MgO.
ＹＳＺ、Ｚｒ０１Ａ ｌ ｔ Ｏｓなどの各種セラミッ
クスやＡｇ、 ＰＬ、 Ａｕおよび合金などの金属が好
適に使用される。この溝２の幅および深さは、酸化物超
電導薄膜を溝部分でセパレートできるように適宜選択さ
れるが、通常、溝幅０．１−１μｍ程度、溝深さ０．１
〜１μｍ程度が望ましい。Various ceramics such as YSZ and Zr01AltOs, and metals such as Ag, PL, Au, and alloys are preferably used. The width and depth of this groove 2 are appropriately selected so that the oxide superconducting thin film can be separated at the groove portion, but usually the groove width is about 0.1-1 μm and the groove depth is about 0.1 μm.
~1 μm is desirable.
先の基板ｌを用いて酸化物超電導体を作成するには、ま
ずこの基板１の表面に、スパッタリング法、ＣＶＤ法、
電子ビーム蒸着法、レーザ蒸着法などの薄膜形成手段を
用いて酸化物超電導薄膜３を形成する。To create an oxide superconductor using the above substrate 1, first, the surface of this substrate 1 is subjected to sputtering, CVD,
The oxide superconducting thin film 3 is formed using a thin film forming method such as electron beam evaporation or laser evaporation.
本発明において好適に使用される酸化物超電導薄膜３の
材料としては、一般式 Ａ −Ｂ −Ｃｕ−０（ただし
Ａは、Ｙ、Ｓｃ、Ｌａ、Ｙｂ、Ｅｒ、Ｅｕ、Ｈｏ、Ｄｙ
等の周期律表ＩＩＩａ族元素の１種以上またはＢｉなど
の周期率表ｖｂ族元素の１種以上またはＴＩなどの周期
率表１１１ｂ族元素の１種以上を示し、Ｂは、Ｍｇ、Ｃ
ａ。The material of the oxide superconducting thin film 3 preferably used in the present invention has the general formula A-B-Cu-0 (where A is Y, Sc, La, Yb, Er, Eu, Ho, Dy
One or more elements of group IIIa of the periodic table such as Bi, one or more elements of group Vb of the periodic table such as Bi, or one or more elements of group 111b of the periodic table such as TI, B is Mg, C
a.
Ｓｒ、Ｂａ等の周期律表Ｉｌａ族元素の１種以上を示す
。One or more elements of group Ila of the periodic table, such as Sr and Ba.
）などの酸化物超電導体であり、例えば、ＹｔＢａｔＣ
ｕ、、０ｘ１ＢｉｔＳｒｔＣａｙＣｕａＯｘ （Ｂ１−
５ｒ−ＣａＣｕ−Ｐ ｂ−０系を含む）、Ｔ ｌｔｃ
ａ＊Ｂ ａｒｃ ｕ３０ ｘなどが好適に使用される。), for example, YtBatC
u,, 0x1BitSrtCayCuaOx (B1-
5r-CaCu-P b-0 system), Tltc
A*B arc u30x etc. are preferably used.
基板ｌの表面に形成する酸化物超電導薄膜３の厚さは、
酸化物超電導体の使用目的や薄膜形成手段の成膜速度な
どの各条件により適宜に選択され、例えば基板ｌの表面
にＹ ＩＢ ａｔｃ ｕ、ｏ ｘの酸化物超電導薄膜を
スパッタリング法で形成する場合の膜厚は、１００００
人程度に設定される。この基板ｌの表面に形成される酸
化物超電導薄膜３は、溝２の部分で通電方向Ｅに沿って
分列された状態で形成される。The thickness of the oxide superconducting thin film 3 formed on the surface of the substrate l is:
It is selected as appropriate depending on various conditions such as the purpose of use of the oxide superconductor and the film formation rate of the thin film forming means. For example, when forming an oxide superconducting thin film of Y IB atcu, o x on the surface of the substrate l by sputtering method. The film thickness is 10000
It is set to about a person. The oxide superconducting thin film 3 formed on the surface of the substrate l is formed in a state where it is divided into rows along the current conduction direction E at the groove 2 portion.
次いで、酸化物超電導薄膜３を形成した基板１を、酸素
含有雰囲気中において熱処理を施す。この熱処理条件は
、酸化物超電導薄膜の材料によって適宜に選択されるが
、薄膜材料としてＹ ＋ Ｂ ａ ｔＣｕ、Ｏｘを用い
る場合には８５０〜９００℃で数時間程度、Ｂ ｉ、Ｓ
ｒｔｃ ａｔｃ Ｌｉ２ＯＸ （７）場合１： １ｔ
８３０〜９００℃で数時間程度、またＴ ｌｙｃ ａｔ
Ｂ ａｔｃ Ｌ！３０ Ｋの場合には８５０〜９００℃
で数時間程度の熱処理を施すのが望ましい。Next, the substrate 1 on which the oxide superconducting thin film 3 is formed is subjected to heat treatment in an oxygen-containing atmosphere. The conditions for this heat treatment are appropriately selected depending on the material of the oxide superconducting thin film, but when using Y + B a tCu or Ox as the thin film material, the heat treatment conditions are heated at 850 to 900°C for several hours, and Bi, S
rtc atc Li2OX (7) Case 1: 1t
At 830 to 900°C for several hours, or at T lyc at
B atc L! 850-900℃ for 30K
It is desirable to perform heat treatment for several hours.
この熱処理によって、酸化物超電導薄膜３の結晶構造が
非晶質状態から超電導性を有する結晶質に変態し、基板
ｌの表面に超電導性を有する酸化物超電導薄膜が形成さ
れた酸化物超電導体が作成される。Through this heat treatment, the crystal structure of the oxide superconducting thin film 3 is transformed from an amorphous state to a crystalline state having superconductivity, and an oxide superconductor with an oxide superconducting thin film having superconductivity formed on the surface of the substrate l is formed. Created.
この熱処理時には、酸化物超電導薄膜３が溝２の部分で
通電方向Ｅに沿って分列された状態で形成されているた
めに、酸化物超電導薄膜３と基板ｌとの熱膨張率の格差
に起因する応力が加わった時に、溝に沿って酸化物超電
導薄膜３に割れを導入することにより、通電方向Ｅと交
差する方向の割れの発生を減少させることができる。During this heat treatment, since the oxide superconducting thin film 3 is formed in a divided state along the current conduction direction E at the groove 2 portion, the difference in thermal expansion coefficient between the oxide superconducting thin film 3 and the substrate l is caused. By introducing cracks into the oxide superconducting thin film 3 along the grooves when the resulting stress is applied, it is possible to reduce the occurrence of cracks in the direction intersecting the current direction E.
したがって、この例による酸化物超電導体の製造方法で
は、熱処理時に発生する割れによる臨界電流密度の損失
が少な（なり、高い臨界電流密度を有する高性能の酸化
物超電導体を得ることができる。Therefore, in the method for manufacturing an oxide superconductor according to this example, there is less loss of critical current density due to cracks that occur during heat treatment, and a high-performance oxide superconductor with a high critical current density can be obtained.
なお、先の例では、通電方向Ｅに沿って直線状の溝２を
形成した基板１を用いたが、基板の表面に形成する溝の
形状はこれに限定されることなく、第３図ないし第５図
に示すような形状としても良い。In the previous example, the substrate 1 in which the linear groove 2 was formed along the current direction E was used, but the shape of the groove formed on the surface of the substrate is not limited to this, and can be any shape shown in FIG. It may also have a shape as shown in FIG.
第３図は、基板の第１の変形例を示す図であって、この
基板４は、通電方向Ｅに沿って矩形波形の溝５を複数本
形成してなるものである。FIG. 3 is a diagram showing a first modified example of the substrate, and this substrate 4 is formed by forming a plurality of rectangular waveform grooves 5 along the current direction E. FIG.
また第４図は、基板の第２の変形例を示す図であって、
この基板６は、通電方向Ｅに沿って波形の溝７を複数本
形成してなるしのである。Further, FIG. 4 is a diagram showing a second modification example of the substrate,
This substrate 6 is formed by forming a plurality of wave-shaped grooves 7 along the current direction E.
また第５図は、基板の第３の変形例を示す図であって、
この基板８は、通電方向Ｅに沿って半円を結んでなる半
円波形の溝９を複数本形成したものである。Further, FIG. 5 is a diagram showing a third modification example of the substrate,
This substrate 8 has a plurality of semicircular wave-shaped grooves 9 formed by connecting semicircles along the current direction E.
これら各変形例においては、谷溝５，７．９を曲線で形
成したことにより、第１図に示す基板ｌの直線状の溝２
に比べ、酸化物超電導薄膜３を形成して熱処理を施す際
に通電方向Ｅと直交する方向の熱歪を溝５．７．９で吸
収緩和することができ、直線状の溝２に比べ、通電方向
Ｅと直交する方向に沿う割れの発生を少なくすることが
できる。In each of these modified examples, by forming the valley grooves 5, 7.9 in curved lines, the linear grooves 2 of the substrate l shown in FIG.
When forming the oxide superconducting thin film 3 and performing heat treatment, the grooves 5, 7, and 9 can absorb and relax the thermal strain in the direction perpendicular to the current direction E, and compared to the linear grooves 2, The occurrence of cracks along the direction perpendicular to the current direction E can be reduced.
以下、本発明方法の製造例を示し、本発明の効果を明確
化する。Hereinafter, production examples of the method of the present invention will be shown to clarify the effects of the present invention.
（製造例り
厚さ０ 、１ ｍｍで１０ｍｍ角の５ｒＴｉＯｓ基板の
表面に、半径１ｍｍの半円をつないで第５図に示した基
板と同様の半円波形の３本の溝を形成した。溝の深さは
約１μｍ１溝幅はｌμｌとした。(Manufacturing example: On the surface of a 10 mm square 5rTiOs substrate with a thickness of 0.1 mm, three grooves with a semicircular waveform similar to that of the substrate shown in FIG. 5 were formed by connecting semicircles with a radius of 1 mm. The depth of the groove was approximately 1 μl and the width of each groove was 1 μl.
この基板の表面にＹ ＋Ｂ ａｔｃ Ｌｉ２ＯＸなる組
成のスパッタリング薄膜を１０時間かけてｌμｌ作成し
た。次いで、この基板を酸素気流中で８９０℃、３時間
の熱処理を行ったが、走査電子顕微鏡観察では溝中に連
続した薄膜の割れは見られたが、他の基板上には割れが
見られなかった。On the surface of this substrate, 1 μl of a thin film having a composition of Y + B atc Li2OX was formed by sputtering over a period of 10 hours. Next, this substrate was heat-treated at 890°C for 3 hours in an oxygen stream, but scanning electron microscopy showed continuous thin film cracks in the grooves, but no cracks were observed on other substrates. There wasn't.
一方、従来の溝なしの基板に同様に薄膜を形成し、熱処
理を施したところ、この薄膜には無数の縦横のクラック
が確認された。On the other hand, when a thin film was similarly formed on a conventional substrate without grooves and subjected to heat treatment, numerous vertical and horizontal cracks were observed in the thin film.
これらを液体窒素に浸漬し、臨界電流密度（Ｊｃ）を測
定した。基板に予め溝を形成したものでは、溝に沿う方
向のＪｃ＝２Ｘ１０５Ａ／ｃｍ”と高い値を示した。ま
た従来基板のサンプルではＪｃ＝ｌＸ１０ ’ Ａ／ａ
ｍ’と低い値となった。これは明らかに薄膜の割れの影
響と判断される。These were immersed in liquid nitrogen and the critical current density (Jc) was measured. The substrate with grooves formed in advance showed a high value of Jc = 2X105 A/cm'' in the direction along the groove. In addition, the sample of the conventional substrate showed Jc = lX10' A/a.
The value was as low as m'. This is clearly determined to be the effect of cracks in the thin film.
（製造例２ ）
厚さ０．１＋＋ｍ”２？１０ｍｍ角＋７）ＭｇＯ製基板
の表面に、深さ約０．５μ膳、溝幅ｌμ饋の第３図に示
す基板の溝と同様の矩形波形の溝を５本作成した。次い
でこの基板表面にＢ ｉｔｓ ｒｔｃ ａｒｃ Ｌｉ２
ＯＸなる組成の薄膜を、電子ビーム蒸着法により１ビー
ム４クルージプルでそれぞれの酸化物を１００人づつ形
成した。次いでこの基板を酸素雰囲気中、８５０℃で１
０時間の熱処理を施した。(Production Example 2) A rectangular waveform similar to the groove of the substrate shown in Fig. 3 with a depth of about 0.5μ and a groove width of lμ is formed on the surface of an MgO substrate (thickness 0.1++m”2?10mm square +7). Five grooves were created.Next, Bits rtc arc Li2 was formed on the surface of this substrate.
A thin film having a composition of OX was formed by electron beam evaporation using 1 beam and 4 cruzi pulls for 100 people of each oxide. This substrate was then heated at 850°C in an oxygen atmosphere for 1
Heat treatment was performed for 0 hours.
そして溝を形成したちの及Ｑ溝のないものを液体中に浸
漬し、臨界電流密度を測定した。その結果、溝を形成し
たものは溝に沿う方向のＪｃが１０ ’ Ａ／ｃｍ”を
示したが、溝のないらのはＪｃ−１０！＾／ｃｌＩｌ″
と低い値であった。Then, the material with the grooves but without the Q-groove was immersed in a liquid, and the critical current density was measured. As a result, the one with grooves showed a Jc of 10'A/cm'' in the direction along the groove, but the one without grooves showed Jc-10!^/clIl''
This was a low value.
（製造例３ ）
厚さ０ 、１ ｌｌ１ｍで１ｏＩＩｌｆｆｌ角のＳ ｒ
Ｔ ｉｏ ３製基板の表面に、深さ０．５μｍ、溝幅０
．５μｍの直線状の溝を４本作成した。次いでこの基板
表面にＢａｔＣｕａＯ６とＣａＯとＴ １．０ 、を３
ターゲツトとしてイオンビームスパッタを行った。次い
で、酸素雰囲気中、８８０℃で１時間の熱処理を施して
、基板の表面にＴ ＬＢ ａｙｃ ａｒｃ ｕ＋ｏ Ｘ
なる組成の厚さ１μｍの超電導薄膜を備えた超電導体を
作成した。(Manufacturing Example 3) S r with thickness 0, 1 ll 1 m and 1 o II ffl angle
A groove with a depth of 0.5 μm and a groove width of 0 is formed on the surface of the T io 3 substrate.
．． Four 5 μm linear grooves were created. Next, 3 layers of BatCuaO6, CaO, and T 1.0 were applied to the surface of this substrate.
Ion beam sputtering was performed as a target. Next, heat treatment was performed at 880° C. for 1 hour in an oxygen atmosphere to form T LB ayc arc u+o X on the surface of the substrate.
A superconductor with a 1 μm thick superconducting thin film having the following composition was created.
得られた超電導体を液体堅木に浸漬し、溝に沿う方向の
Ｊｃを測定した結果、Ｊｃ＝ ｌ ０３Ａ／ｃｎ＋鵞で
あった。The obtained superconductor was immersed in liquid hardwood, and the Jc in the direction along the groove was measured. As a result, Jc=l03A/cn+goose.
一方、溝を形成しない基板を用いて同様に超電導体を作
成し、Ｊｃを測定した結果、 Ｊｃ＝５Ｘ１０ ” Ａ
／ｃｔｔｒ”であった。On the other hand, a superconductor was similarly created using a substrate without grooves, and Jc was measured, and as a result, Jc=5X10'' A
/cttr”.
溝を形成した基板を用いた超電導体は、溝を形成しない
基板を用いた超電導体に比べ、２倍のＪｃが得られたが
、先の製造例１および製造例２の結果に比べ、基板の溝
形成による効果が少ない。The superconductor using a substrate with grooves had twice the Jc compared to the superconductor using a substrate without grooves, but compared to the results of Production Example 1 and Production Example 2, the The effect of groove formation is small.
これは、溝が直線状であると、酸化物超電導薄膜を形成
し熱処理を施す際に、通電方向に直交する方向の熱歪を
吸収できないため、通電方向と直交する方向に若干割れ
が発生してしまうためと推測される。This is because if the groove is straight, it cannot absorb the thermal strain in the direction perpendicular to the current direction when forming the oxide superconducting thin film and performing heat treatment, so some cracks may occur in the direction perpendicular to the current direction. It is assumed that this is because the
「発明の効果」
以上説明したように、本発明方法では、基板の表面に酸
化物超電導薄膜を積層形成してなる酸化物超電導体を製
造するに際し、予め通電方向に沿って溝が形成された基
板の表面に酸化物超電導薄膜を積層形成し、次いで熱処
理を施すことにより、酸化物超電導薄膜が溝の部分で通
電方向に沿って分列された状態で形成され、熱処理を施
す際に酸化物超電導薄膜と基板との熱膨張率の格差に起
因する応力が加わった時に、溝に沿って酸化物超電導薄
膜に割れを導入して、通電方向と交差する方向の割れの
発生を減少させることができるので、熱処理時に発生す
る割れによる臨界電流密度の損失が少なくなり、高い臨
界電流密度を有する高性能の酸化物超電導体を得ること
ができる。"Effects of the Invention" As explained above, in the method of the present invention, when manufacturing an oxide superconductor formed by laminating oxide superconducting thin films on the surface of a substrate, grooves are formed in advance along the current direction. By laminating the oxide superconducting thin film on the surface of the substrate and then performing heat treatment, the oxide superconducting thin film is formed in a state where it is divided into rows along the current conduction direction at the groove part, and when the heat treatment is performed, the oxide superconducting thin film is When stress is applied due to the difference in coefficient of thermal expansion between the superconducting thin film and the substrate, it is possible to introduce cracks into the oxide superconducting thin film along the grooves, thereby reducing the occurrence of cracks in the direction crossing the direction of current flow. As a result, loss of critical current density due to cracks generated during heat treatment is reduced, and a high-performance oxide superconductor with a high critical current density can be obtained.
第五図および第２図は本発明方法の一実施例を説明する
ための図であって、第１図は基板の斜視図、第２図は基
板の表面に酸化物超電導薄膜を成膜した状態を示す斜視
図、第３図ないし第５図は第１図に示す基板の変形例を
示す斜視図、第６図は、酸化物超電導薄膜に発生する割
れと通電方向の関係を説明するための斜視図である。
第１図
第２図
１．４．６．８・・・基板、 ２．５．７．９・
・・溝、３・・・酸化物超電導薄膜。5 and 2 are diagrams for explaining one embodiment of the method of the present invention, in which FIG. 1 is a perspective view of a substrate, and FIG. 2 is a diagram showing an oxide superconducting thin film formed on the surface of the substrate. FIGS. 3 to 5 are perspective views showing modified examples of the substrate shown in FIG. 1, and FIG. 6 is for explaining the relationship between cracks that occur in the oxide superconducting thin film and the direction of current flow. FIG. Figure 1 Figure 2 1.4.6.8...Substrate, 2.5.7.9.
...Groove, 3...Oxide superconducting thin film.
Claims (1)
物超電導体の製造方法であって、 予め通電方向に沿って溝が形成された基板の表面に酸化
物超電導薄膜を積層形成し、次いで熱処理を施すことを
特徴とする酸化物超電導体の製造方法。[Scope of Claims] A method for producing an oxide superconductor by laminating an oxide superconducting thin film on the surface of a substrate, the method comprising laminating an oxide superconducting thin film on the surface of the substrate in which grooves have been formed in advance along the current direction. 1. A method for producing an oxide superconductor, which comprises laminating and then heat-treating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63242822A JPH0292806A (en) | 1988-09-28 | 1988-09-28 | Production of oxide superconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63242822A JPH0292806A (en) | 1988-09-28 | 1988-09-28 | Production of oxide superconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0292806A true JPH0292806A (en) | 1990-04-03 |
Family
ID=17094810
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63242822A Pending JPH0292806A (en) | 1988-09-28 | 1988-09-28 | Production of oxide superconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0292806A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013004457A (en) * | 2011-06-21 | 2013-01-07 | Fujikura Ltd | Superconductive wire material and manufacturing method thereof |
-
1988
- 1988-09-28 JP JP63242822A patent/JPH0292806A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013004457A (en) * | 2011-06-21 | 2013-01-07 | Fujikura Ltd | Superconductive wire material and manufacturing method thereof |
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