JPH0290693A - Thin film electronic component and manufacture thereof - Google Patents
Thin film electronic component and manufacture thereofInfo
- Publication number
- JPH0290693A JPH0290693A JP63243657A JP24365788A JPH0290693A JP H0290693 A JPH0290693 A JP H0290693A JP 63243657 A JP63243657 A JP 63243657A JP 24365788 A JP24365788 A JP 24365788A JP H0290693 A JPH0290693 A JP H0290693A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- insulating substrate
- tantalum oxide
- oxide layer
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims abstract description 41
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910001936 tantalum oxide Inorganic materials 0.000 claims abstract description 30
- 239000010953 base metal Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000007733 ion plating Methods 0.000 claims abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 7
- 239000001301 oxygen Substances 0.000 claims abstract description 7
- 238000004544 sputter deposition Methods 0.000 claims abstract description 7
- 239000010453 quartz Substances 0.000 abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 17
- 229910000859 α-Fe Inorganic materials 0.000 abstract description 16
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 5
- 239000010931 gold Substances 0.000 abstract description 5
- 229910052737 gold Inorganic materials 0.000 abstract description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052802 copper Inorganic materials 0.000 abstract description 4
- 239000010949 copper Substances 0.000 abstract description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000853 adhesive Substances 0.000 abstract description 3
- 230000001070 adhesive effect Effects 0.000 abstract description 3
- 239000010936 titanium Substances 0.000 abstract description 3
- 229910052719 titanium Inorganic materials 0.000 abstract description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- 229910000669 Chrome steel Inorganic materials 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、絶縁基板上に導電性薄膜又は抵抗薄膜が設け
られている薄ｆｌｉｔ子部品及びその製造方法に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a thin flit component in which a conductive thin film or a resistive thin film is provided on an insulating substrate, and a method for manufacturing the same.
［従来技術］
第３図は従来のマイクロ波集積回路における導電性薄膜
電子部品１の層構造を示したものである。[Prior Art] FIG. 3 shows the layer structure of a conductive thin film electronic component 1 in a conventional microwave integrated circuit.
図において、２はアルミナ、石英又はフェライト等より
なる絶縁基板、３は該絶縁基板２上に真空蒸着法で極く
薄＜（−＝５００人）設けられているニッケルクロム、
クロム又はチタン等からなる下地金属層、４は該下地金
属＠３上に真空蒸着法により設けられている金又は銅等
からなる導電性薄膜である。下地金属層３は導電性薄膜
４の絶縁基板２への付着力を増すためのものである。In the figure, 2 is an insulating substrate made of alumina, quartz, ferrite, etc.; 3 is nickel chromium, which is extremely thinly deposited on the insulating substrate 2 by vacuum evaporation;
The base metal layer 4 made of chromium, titanium, etc. is a conductive thin film made of gold, copper, etc. provided on the base metal @3 by vacuum deposition. The underlying metal layer 3 is for increasing the adhesion of the conductive thin film 4 to the insulating substrate 2.
第４図は従来のマイクロ波集積回路における抵抗Ｉｌ！
Ｊ電子部品５の層構造を示したものである。Figure 4 shows the resistance Il! in a conventional microwave integrated circuit.
It shows the layer structure of the J electronic component 5.
図において、２はアルミナ、石英、又はフェライト等よ
りなる絶縁基板、６は絶縁基板２上に直接設けられてい
る窒化タンタル又はニッケルクロム等からなる抵抗ＩＮ
！である。In the figure, 2 is an insulating substrate made of alumina, quartz, ferrite, etc., and 6 is a resistor IN made of tantalum nitride, nickel chromium, etc. provided directly on the insulating substrate 2.
! It is.
これら導電性薄膜４又は抵抗薄１６は、エツチングによ
り所望のパターンに形成されている。These conductive thin films 4 or resistive thin films 16 are formed into desired patterns by etching.
［発明が解決しようとする課題］
しかしながら、石英やフェライトよりなる絶縁基板２で
は、アルミナよりなる絶縁基板２に比べて導電性薄膜４
や抵抗薄膜６の付着力が極端に弱く、基板温度等の蒸着
条件の制御等でも付着力の大きな改善はみられない問題
点があった。例えば、石英よりなる絶縁基板２上にニッ
ケルクロムよりなる下地金属層３を設け、その上に金よ
りなる導電性１ａｉ４を設けた導電性源１！電子部品１
の場合の導電性薄膜４の引張り強度は０〜１．０Ｋｙ／
−であり、そのバラツキも多い。一方、フェライトより
なる絶縁基板２上に同様構成で導電性薄膜４を設けた導
電性薄膜電子部品１の場合の導電性薄膜４の引張り強度
は０．５〜１．５Ｋｉ／−である。これに対し、アルミ
ナよりなる絶縁基板２上に同様構成で導電性情！Ｉ！４
を設けた導電性薄膜電子部品１の場合の導電性情ｌｌ１
４の引張り強度は２．５に９／ｄ以上である。[Problems to be Solved by the Invention] However, in the insulating substrate 2 made of quartz or ferrite, the conductive thin film 4 is lower than that in the insulating substrate 2 made of alumina.
There was a problem in that the adhesion force of the resistive thin film 6 was extremely weak, and the adhesion force could not be significantly improved even by controlling the deposition conditions such as the substrate temperature. For example, a conductive source 1 is provided with a base metal layer 3 made of nickel chromium on an insulating substrate 2 made of quartz, and a conductive layer 1ai4 made of gold is provided thereon. Electronic parts 1
The tensile strength of the conductive thin film 4 in this case is 0 to 1.0 Ky/
-, and there are many variations. On the other hand, in the case of a conductive thin film electronic component 1 in which a conductive thin film 4 having the same structure is provided on an insulating substrate 2 made of ferrite, the tensile strength of the conductive thin film 4 is 0.5 to 1.5 Ki/-. On the other hand, a conductive material with the same structure on an insulating substrate 2 made of alumina! I! 4
Conductive information in case of conductive thin film electronic component 1 provided with
The tensile strength of No. 4 is 2.5 to 9/d or more.
これら引張り強度の値を表１に示す。Table 1 shows these tensile strength values.
表１
これらの場合の剥離は、総て下地金Ｒ層３と絶縁基板２
との間で生じている。Table 1 In all of these cases, the peeling occurs between the base metal R layer 3 and the insulating substrate 2.
It is occurring between
このような結果は、抵抗薄膜電子部品５の場合でも、石
英やフェライトよりなる絶縁基板２の場合に生じている
。Such a result occurs both in the case of the resistive thin film electronic component 5 and in the case of the insulating substrate 2 made of quartz or ferrite.
このため、石英やフェライトよりなる絶縁基板２を用い
た薄膜電子部品では、成膜時の着膜不安定性を原因とす
るトラブルが多発している。For this reason, in thin film electronic components using an insulating substrate 2 made of quartz or ferrite, troubles often occur due to instability of film deposition during film formation.
本発明の目的は、石英やファライトよりなる絶縁基板で
も薄膜の付着力を上げることができる薄膜電子部品及び
その製造方法を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a thin film electronic component and a method for manufacturing the same, which can increase the adhesive strength of a thin film even on an insulating substrate made of quartz or farite.
［課題を解決するための手段］
上記の目的を達成するための本発明の手段を特徴とする
請求項（１）に記載の発明は、絶縁基板上に８１電性薄
膜又は抵抗薄膜が設けられている薄膜電子部品において
、前記絶縁基板と前記導電性薄膜又は前記抵抗薄膜との
間に酸化タンタル層が設けられていることを特徴とする
請求項（２）に記載の発明は、絶縁基板上に導電性薄膜
又は抵抗薄膜を設けてなる薄ｆｉ！Ｊ電子部品の製造方
法において、絶縁基板の上に酸素雰囲気中でイオンプレ
ーティング法又はスパッタ法で酸化タンタル層を形成し
、その上に下地金属層を介して導電性薄膜を設けるか又
は直接抵抗薄膜を設けることを特徴とする。[Means for Solving the Problems] The invention as set forth in claim (1), which is characterized by the means of the present invention for achieving the above object, provides an electrically conductive thin film or a resistive thin film provided on an insulating substrate. The invention according to claim 2, wherein a tantalum oxide layer is provided between the insulating substrate and the conductive thin film or the resistive thin film, A thin FI that is provided with a conductive thin film or a resistive thin film! J In a method for manufacturing electronic components, a tantalum oxide layer is formed on an insulating substrate by an ion plating method or a sputtering method in an oxygen atmosphere, and a conductive thin film is provided on the tantalum oxide layer through a base metal layer, or a conductive thin film is provided on the tantalum oxide layer via an underlying metal layer, or a tantalum oxide layer is formed directly on the tantalum oxide layer using an ion plating method or a sputtering method in an oxygen atmosphere. It is characterized by providing a thin film.
［作 用］
請求項（１）のように、絶縁基板上に酸化タンタル層を
設け、その上に所要の薄膜を設けた層構造にすると、石
英やフェライトよりなる絶縁基板であっても薄膜の付着
力を上げることができる。[Function] If a layered structure in which a tantalum oxide layer is provided on an insulating substrate and a required thin film is provided thereon as claimed in claim (1) is used, even if the insulating substrate is made of quartz or ferrite, the thin film will be thin. Can increase adhesion.
請求項（２）のように、酸化タンタル層の形成を、酸素
雰囲気中でイオンプレーティング法又はスパッタ法によ
り行うと、後からタンタルの酸化等を行う方法に比べて
、酸化タンタルを直接緻密に付着させることができ、ま
た均一に酸化ができ、安定した酸化タンタル層の形成を
容易に行うことができる。As claimed in claim (2), if the tantalum oxide layer is formed by ion plating or sputtering in an oxygen atmosphere, tantalum oxide can be directly densified compared to a method in which tantalum is oxidized later. It can be deposited, uniformly oxidized, and a stable tantalum oxide layer can be easily formed.
［実施例］
以下、本発明の実施例を図面を参照して詳細に説明する
。なお、前述した第３図及び第４図と対応する部分には
同一符号をつけて示している。[Example] Hereinafter, an example of the present invention will be described in detail with reference to the drawings. Note that parts corresponding to those in FIGS. 3 and 4 described above are designated by the same reference numerals.
第１図は、導電性７ＩＩＩｌｌ電子部品１に本発明を適
用した例を示している。本実施例では、石英又はフェラ
イト等からなる絶縁基板２の上に酸化タンタル（Ｔａｚ
Ｏｓ ）層７が設けられ、その上にニッケルクロム、
クロム又はメタン等からなる下地金属層３が設けられ、
その上に金又は銅等からなる導電性薄膜４が設けられた
層構造となっている。FIG. 1 shows an example in which the present invention is applied to a conductive 7IIIll electronic component 1. In this embodiment, tantalum oxide (Taz) is deposited on an insulating substrate 2 made of quartz, ferrite, etc.
Os) layer 7 is provided, on which nickel chromium,
A base metal layer 3 made of chromium, methane, etc. is provided,
It has a layered structure in which a conductive thin film 4 made of gold, copper, or the like is provided thereon.
このような導電性薄膜電子部品１の製造は、次のように
して行う。石英又はフェライト等からなる絶縁基板２上
に、酸素雰囲気中でイオンプレーティング法又はスパッ
タ法にて酸化タンタル層７を約１５００人の厚さで形成
する。その後、この酸化タンタル層７の上にニッケルク
ロム、クロム又はメタン等からなる下地金属層３を約１
５００人の厚さで蒸着させて形成する。この下地金属層
３の上に金又は銅からなる導電性１１１４を蒸着させて
形成する。Manufacturing of such a conductive thin film electronic component 1 is carried out as follows. On an insulating substrate 2 made of quartz, ferrite, or the like, a tantalum oxide layer 7 is formed to a thickness of about 1500 nm by ion plating or sputtering in an oxygen atmosphere. After that, on this tantalum oxide layer 7, a base metal layer 3 made of nickel chromium, chromium, methane, etc. is applied for about 10 minutes.
It is formed by vapor deposition to a thickness of 500 mm. A conductive layer 1114 made of gold or copper is formed on the base metal layer 3 by vapor deposition.
この場合の導電性薄膜４の引張り強度を表２に示す。Table 2 shows the tensile strength of the conductive thin film 4 in this case.
この結果、石英又はフェライトよりなる絶縁基板２の場
合でも、酸化タンタル層７を設けることにより、実用上
問題のない安定した着膜強度が得られることが確認され
た。ただし、この場合の剥離は、下地金属層３と酸化タ
ンタル層７との間で生じた。As a result, it was confirmed that even in the case of the insulating substrate 2 made of quartz or ferrite, by providing the tantalum oxide layer 7, stable film deposition strength without any practical problems could be obtained. However, the peeling in this case occurred between the base metal layer 3 and the tantalum oxide layer 7.
酸化タンタル層７と下地金属層３との間に窒化タンタル
層を更に設けたところ、表２に示すようにアルミナより
なる絶縁基板２を用いたときとほぼ等しい着膜強度が得
られた。When a tantalum nitride layer was further provided between the tantalum oxide layer 7 and the base metal layer 3, as shown in Table 2, almost the same film deposition strength as when the insulating substrate 2 made of alumina was used was obtained.
第２図は、抵抗薄膜電子部品５に本発明を適用した例を
示している。本実施例では、石英又はフェライト等から
なる絶縁基板２の上に酸化タンタル（Ｔａｚ○５）層７
が設けられ、その上にニッケルクロム又は窒化タンタル
等の抵抗薄膜６が設けられた層構造となっている。FIG. 2 shows an example in which the present invention is applied to a resistive thin film electronic component 5. In this embodiment, a tantalum oxide (Taz○5) layer 7 is provided on an insulating substrate 2 made of quartz, ferrite, etc.
It has a layered structure in which a resistive thin film 6 of nickel chromium or tantalum nitride or the like is provided thereon.
この場合の酸化タンタル層７も、前述したと同様にして
設けることができる。The tantalum oxide layer 7 in this case can also be provided in the same manner as described above.
上記実施例では、石英やフェライト等よりなる絶縁基板
２を用いた薄膜電子部品に本発明を適用したが、アルミ
ナ等よりなる絶縁基板２を用いた薄膜電子部品にも本発
明は同様に適用できるものである。In the above embodiment, the present invention was applied to a thin film electronic component using an insulating substrate 2 made of quartz, ferrite, etc., but the present invention can be similarly applied to a thin film electronic component using an insulating substrate 2 made of alumina, etc. It is something.
上記実施例では、導電性薄膜４と抵抗薄膜６とが別々の
絶縁基板２に設けられている場合について説明したが、
これらは同一の絶縁基板２上に共に設けられる場合もあ
ることは勿論である。In the above embodiment, a case was explained in which the conductive thin film 4 and the resistive thin film 6 were provided on separate insulating substrates 2.
Of course, these may be provided together on the same insulating substrate 2 in some cases.
［発明の効果］
以上説明したように本発明によれば、下記のような優れ
た効果を得ることができる。[Effects of the Invention] As explained above, according to the present invention, the following excellent effects can be obtained.
請求項（１）の発明では、絶縁基板上に酸化タンタル層
を設け、その上に所要の薄膜を設けた層構造にしている
ので、石英やフェライトよりなる絶縁基板であっても薄
膜の付着力を上げることができる。The invention of claim (1) has a layered structure in which a tantalum oxide layer is provided on an insulating substrate and a required thin film is provided on top of the tantalum oxide layer, so even if the insulating substrate is made of quartz or ferrite, the adhesion of the thin film is strong. can be raised.
請求項（２）の発明では、酸化タンタル層の形成を、酸
素雰囲気中でイオンプレーティング法又はスパッタ法に
より行うので、後からタンタルの酸化等を行う方法に比
べて、酸化タンタルを直接緻密に付着させることができ
、また均一に酸化ができ、安定した酸化タンタル層の形
成を容易に行うことができる。In the invention of claim (2), since the tantalum oxide layer is formed by ion plating or sputtering in an oxygen atmosphere, tantalum oxide can be directly densified compared to a method in which tantalum is oxidized later. It can be deposited, uniformly oxidized, and a stable tantalum oxide layer can be easily formed.
第１図及び第２図は本発明に係る薄膜電子部品の２種の
例を示す縦断面図、第３図及び第４図は従来の薄膜電子
部品の２種の例を示す縦断面図である。
１・・・導電性薄膜電子部品、２・・・絶縁基板、３・
・・下地金属層、４・・・導電性薄膜、５・・・抵抗薄
膜電子部品、６・・・抵抗薄膜、７・・・酸化タンタル
層。
第
図
第
図
第
図
第
図
訂正する。
（２）第７頁第２行の「メタン」を１チタン」ににＪ正
する。
（３）第７頁第２行のＩ’１５００人］をｒ５００人に
訂正する。
以
上1 and 2 are vertical sectional views showing two examples of thin film electronic components according to the present invention, and FIGS. 3 and 4 are vertical sectional views showing two examples of conventional thin film electronic components. be. 1... Conductive thin film electronic component, 2... Insulating substrate, 3...
... Base metal layer, 4... Conductive thin film, 5... Resistive thin film electronic component, 6... Resistive thin film, 7... Tantalum oxide layer. Figure Figure Figure Figure Correct. (2) Correct "methane" in the second line of page 7 to "1 titanium". (3) In the second line of page 7, I'1500 people] is corrected to r500 people. that's all
Claims (2)
ている薄膜電子部品において、前記絶縁基板と前記導電
性薄膜又は前記抵抗薄膜との間に酸化タンタル層が設け
られていることを特徴とする薄膜電子部品。(1) A thin film electronic component in which a conductive thin film or a resistive thin film is provided on an insulating substrate, characterized in that a tantalum oxide layer is provided between the insulating substrate and the conductive thin film or the resistive thin film. thin film electronic components.
る薄膜電子部品の製造方法において、絶縁基板の上に酸
素雰囲気中でイオンプレーティング法又はスパッタ法で
酸化タンタル層を形成し、その上に下地金属層を介して
導電性薄膜を設けるか又は直接抵抗薄膜を設けることを
特徴とする薄膜電子部品の製造方法。(2) In a method for manufacturing thin film electronic components in which a conductive thin film or a resistive thin film is provided on an insulating substrate, a tantalum oxide layer is formed on the insulating substrate by an ion plating method or a sputtering method in an oxygen atmosphere. A method for manufacturing a thin film electronic component, characterized in that a conductive thin film is provided thereon via a base metal layer, or a resistive thin film is directly provided thereon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63243657A JP2666977B2 (en) | 1988-09-28 | 1988-09-28 | Thin-film electronic components |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63243657A JP2666977B2 (en) | 1988-09-28 | 1988-09-28 | Thin-film electronic components |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0290693A true JPH0290693A (en) | 1990-03-30 |
| JP2666977B2 JP2666977B2 (en) | 1997-10-22 |
Family
ID=17107073
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63243657A Expired - Fee Related JP2666977B2 (en) | 1988-09-28 | 1988-09-28 | Thin-film electronic components |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2666977B2 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS501369A (en) * | 1973-05-09 | 1975-01-08 | ||
| JPS5072167A (en) * | 1973-10-30 | 1975-06-14 | ||
| JPS61149475A (en) * | 1984-12-25 | 1986-07-08 | Nec Corp | Manufacture of high purity insulator target |
| JPS61196201A (en) * | 1985-02-26 | 1986-08-30 | Canon Inc | Formation of film by low temperature vapor deposition |
-
1988
- 1988-09-28 JP JP63243657A patent/JP2666977B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS501369A (en) * | 1973-05-09 | 1975-01-08 | ||
| JPS5072167A (en) * | 1973-10-30 | 1975-06-14 | ||
| JPS61149475A (en) * | 1984-12-25 | 1986-07-08 | Nec Corp | Manufacture of high purity insulator target |
| JPS61196201A (en) * | 1985-02-26 | 1986-08-30 | Canon Inc | Formation of film by low temperature vapor deposition |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2666977B2 (en) | 1997-10-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |