JPH0290650A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH0290650A
JPH0290650A JP24281588A JP24281588A JPH0290650A JP H0290650 A JPH0290650 A JP H0290650A JP 24281588 A JP24281588 A JP 24281588A JP 24281588 A JP24281588 A JP 24281588A JP H0290650 A JPH0290650 A JP H0290650A
Authority
JP
Japan
Prior art keywords
output
control signal
output control
input
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24281588A
Other languages
Japanese (ja)
Inventor
Takafumi Suzuki
孝文 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP24281588A priority Critical patent/JPH0290650A/en
Publication of JPH0290650A publication Critical patent/JPH0290650A/en
Pending legal-status Critical Current

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

PURPOSE:To facilitate a work at the time of a test and to improve a testability in a semiconductor integrated circuit using an insulated gate field-effect transistor by a method wherein an output power reducing circuit and a pad for output control signal use are connected to the output control signal of an input/output driving circuit cell. CONSTITUTION:An output power reducing circuit 3 and a pad 12 for output control signal use are connected to an input/output driving circuit 2, whereby the state of an output control signal of the input/output driving circuit cell can be monitored outside of an LSI chip. Moreover, in case a signal for output control use is inputted from the exterior of the chip through the pad 12, there is a low output power buffer element 8 in the interior of the circuit 3 and as the output control signal can not overcome the signal from the outside of the chip, the output control signal of the input/output driving circuit cell can be directly controlled.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、マスタースライス方式、又はスタンダードセ
ル方式半導体集積回路における信頼性試験に伴なう作業
の簡易化に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to simplification of work associated with reliability testing in master slice type or standard cell type semiconductor integrated circuits.

〔従来の技術J 従来のマスタースライス方式、又はスタンダードセル方
式半導体集積回路では、LSIチップの周囲に配置され
る入出力駆動回路セルの出力制御信号をLSIチップ外
部から制御及び状態監視を行なうことができなかった。
[Prior Art J] In a conventional master slice type or standard cell type semiconductor integrated circuit, it is possible to control and monitor the output control signals of the input/output drive circuit cells arranged around the LSI chip from outside the LSI chip. could not.

〔発明が解決しようとする課題) しかし、従来の技術では出力制御信号をLSIチップ外
部で制御することができず、LSIチップ内部の論理回
路で試験状態を作成し試験を行なうため試験性が非常に
悪かった。
[Problem to be solved by the invention] However, in the conventional technology, the output control signal cannot be controlled outside the LSI chip, and the test state is created and tested using the logic circuit inside the LSI chip, so testability is extremely poor. It was bad.

そこで本発明は、従来の半導体装置の問題点を解決する
ためのもので、その目的とするところは、試験性の良い
出力制御信号を含む入出力駆動回路セルを提供するとこ
ろにある。
SUMMARY OF THE INVENTION The present invention is intended to solve the problems of conventional semiconductor devices, and its purpose is to provide an input/output drive circuit cell that includes an output control signal with good testability.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の半導体装置は、 a)絶縁ゲート電界効果型トランジスタを用いた半導体
集積回路において。
The semiconductor device of the present invention includes: a) a semiconductor integrated circuit using an insulated gate field effect transistor;

b)出力制御信号を持つ入出力駆動回路セルで、 C)前記入出力駆動回路セルの前記出力制御信号に出力
能力低下回路と出力制御信号用パッドを接続することを
特徴とする半導体装置。
b) an input/output drive circuit cell having an output control signal, and c) an output capability reduction circuit and an output control signal pad connected to the output control signal of the input/output drive circuit cell.

[実 施 例] 以下に本発明の実施例を図面にもとづいて説明する。第
1図は第1の実施例を示す回路図である。第1図におい
て実線1で囲まれる部分が入出力駆動回路セル、破uA
2で囲まれる部分が入出力駆動回路、破線3で囲まれる
部分が出力能力低下回路である。また、前記出力能力低
下回路3には低出力能力バッファー素子8を使用する。
[Example] Examples of the present invention will be described below based on the drawings. FIG. 1 is a circuit diagram showing a first embodiment. In Figure 1, the part surrounded by solid line 1 is the input/output drive circuit cell, broken uA.
The part surrounded by 2 is an input/output drive circuit, and the part surrounded by a broken line 3 is an output capability reduction circuit. Further, a low output capacity buffer element 8 is used in the output capacity reduction circuit 3.

前記入出力駆動回路2に出力能力低下回路3と出力制御
信号用パッド12を接続することにより、出力制御信号
の状態をLSIチップ外部で監視することができる。ま
た、LSIチップ外部から出力制御用の信号を出力制御
信号用パッド12を通して入力する場合、出力能力低下
回路3の内部に低出力能力バッファー素子8があり、L
SIチップの外部からの信号に打ち勝つことができない
ため、直接入出力駆動回路セルの出力制御信号を制御す
ることができる。
By connecting the output capability reduction circuit 3 and the output control signal pad 12 to the input/output drive circuit 2, the state of the output control signal can be monitored outside the LSI chip. In addition, when inputting an output control signal from outside the LSI chip through the output control signal pad 12, a low output capacity buffer element 8 is provided inside the output capacity reduction circuit 3.
Since signals from outside the SI chip cannot be overcome, the output control signals of the input/output driving circuit cells can be directly controlled.

以上の実施例はあくまでも一実施例でしかなく、第2図
のように接続する場合でも同様な効果を得ることができ
る。
The above embodiment is just one example, and similar effects can be obtained even when connected as shown in FIG.

以上のような実施例において、試験時の操作性が上がり
、それに伴なう作業が容易になり、また、試験性も向上
する。
In the embodiments described above, the operability during testing is improved, the associated work is facilitated, and the testability is also improved.

〔発明の効果] 本発明は以上説明したように、入出力駆動回路セル内に
出力能力低下回路と出力制御信号用パッドを追加し接続
することにより、試験時の作業が容易にすることができ
、また、試験性も向上する効果がある。
[Effects of the Invention] As explained above, the present invention can simplify testing work by adding and connecting an output capacity reduction circuit and an output control signal pad in an input/output drive circuit cell. , it also has the effect of improving testability.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は第1の実施例を示す回路図、第2図は第2の実
施例を示す回路図、第3図は従来の入出力駆動回路セル
の回路図である。 101.108・・・入力端子 102、105. 103、 l 06゜ 104、10 11.15  ・ 13 ・ ・ ・ ・ 12.14  ・ l 、 4.7 ・ 2、5 ・ ・ ・ 8、9 ・ ・ ・ 出力端子 出力制御端子 接続端子 入出力パッド 出力パッド 出力制御端子用パッド 入出力駆動回路セル 入出力駆動回路 低出力能カバッファ一 素子 換1 図 以上 あ2日 出願人 セイコーエプソン株式会社 代理人 弁理士 上 柳 雅 誉(他1名)第30
FIG. 1 is a circuit diagram showing a first embodiment, FIG. 2 is a circuit diagram showing a second embodiment, and FIG. 3 is a circuit diagram of a conventional input/output drive circuit cell. 101.108...Input terminals 102, 105. 103, l 06゜104, 10 11.15 ・ 13 ・ ・ ・ 12.14 ・ l , 4.7 ・ 2, 5 ・ ・ 8, 9 ・ ・ ・ Output terminal Output control terminal Connection terminal Input/output pad output Pad input/output drive circuit for pad output control terminal Cell input/output drive circuit Low output capacity buffer One element replacement 1 Figure above 2 days Applicant: Seiko Epson Corporation Agent Patent attorney: Masayoshi Kamiyanagi (1 other person) No. 30

Claims (1)

【特許請求の範囲】[Claims] (1)a)絶縁ゲート電界効果型トランジスタを用いた
半導体集積回路において、 b)出力制御信号を持つ入出力駆動回路セルで、 c)前記入出力駆動回路セルの前記出力制御信号に出力
能力低下回路と出力制御信号用パッドを接続することを
特徴とする半導体装置。
(1) a) In a semiconductor integrated circuit using an insulated gate field effect transistor, b) In an input/output drive circuit cell having an output control signal, and c) In a semiconductor integrated circuit using an insulated gate field effect transistor; A semiconductor device characterized by connecting a circuit and an output control signal pad.
JP24281588A 1988-09-28 1988-09-28 Semiconductor device Pending JPH0290650A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24281588A JPH0290650A (en) 1988-09-28 1988-09-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24281588A JPH0290650A (en) 1988-09-28 1988-09-28 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH0290650A true JPH0290650A (en) 1990-03-30

Family

ID=17094702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24281588A Pending JPH0290650A (en) 1988-09-28 1988-09-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH0290650A (en)

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