JPH0287075U - - Google Patents
Info
- Publication number
- JPH0287075U JPH0287075U JP16376188U JP16376188U JPH0287075U JP H0287075 U JPH0287075 U JP H0287075U JP 16376188 U JP16376188 U JP 16376188U JP 16376188 U JP16376188 U JP 16376188U JP H0287075 U JPH0287075 U JP H0287075U
- Authority
- JP
- Japan
- Prior art keywords
- compound semiconductor
- reaction tube
- diffusion barrier
- elements
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 239000000470 constituent Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000003779 heat-resistant material Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
第１図は本考案の化合物半導体単結晶製造装置
の一実施例を示す断面図である。
１：石英反応管、２：石英ボート、３：種結晶
、４：Ｃａ、５：Ａｓ、６：拡散障壁、７：反応
炉。
FIG. 1 is a sectional view showing an embodiment of the compound semiconductor single crystal manufacturing apparatus of the present invention. 1: Quartz reaction tube, 2: Quartz boat, 3: Seed crystal, 4: Ca, 5: As, 6: Diffusion barrier, 7: Reactor.
Claims (1)
一方の元素を入れ、他端には他の構成元素を種結
晶と共にボートに入れて両者の間を拡散障壁で仕
切り、前記石英反応管を反応炉内で加熱して前記
両元素を反応させて化合物半導体の単結晶を成長
させる化合物半導体単結晶製造装置において、前
記拡散障壁が、耐熱性物質よりなることを特徴と
する化合物半導体単結晶製造装置。 One of the elements constituting the compound semiconductor is placed in one end of the quartz reaction tube, and the other constituent elements are placed in a boat along with a seed crystal at the other end, with a diffusion barrier separating them, and the quartz reaction tube is placed inside the reactor. An apparatus for producing a compound semiconductor single crystal in which a single crystal of a compound semiconductor is grown by heating the two elements to react with each other, wherein the diffusion barrier is made of a heat-resistant material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16376188U JPH0287075U (en) | 1988-12-16 | 1988-12-16 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16376188U JPH0287075U (en) | 1988-12-16 | 1988-12-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0287075U true JPH0287075U (en) | 1990-07-10 |
Family
ID=31448773
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16376188U Pending JPH0287075U (en) | 1988-12-16 | 1988-12-16 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0287075U (en) |
-
1988
- 1988-12-16 JP JP16376188U patent/JPH0287075U/ja active Pending