JPH0286193A - Manufacture of thin film multilayer circuit board - Google Patents

Manufacture of thin film multilayer circuit board

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Publication number
JPH0286193A
JPH0286193A JP23833588A JP23833588A JPH0286193A JP H0286193 A JPH0286193 A JP H0286193A JP 23833588 A JP23833588 A JP 23833588A JP 23833588 A JP23833588 A JP 23833588A JP H0286193 A JPH0286193 A JP H0286193A
Authority
JP
Japan
Prior art keywords
conductor
layer
insulating layer
pattern
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23833588A
Other languages
Japanese (ja)
Inventor
Yasuhito Takahashi
康仁 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP23833588A priority Critical patent/JPH0286193A/en
Publication of JPH0286193A publication Critical patent/JPH0286193A/en
Pending legal-status Critical Current

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  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

PURPOSE:To prevent a step from forming between the surfaces of insulating layers and those of conductor layers and facilitate soldering by forming conductor layer patterns by embedding recessions formed beforehand on the conductor layer pattern forming scheduled areas of the insulating layers. CONSTITUTION:Openings are formed on the conductor via holes 23 of a ceramic substrate 22 having conductor patterns 21 formed therewithin. A conductor layer 26 is formed on a first insulating layer 24 having openings made therein and a copper plating layers 28 are formed in the openings with a resist pattern 27 used as a mask. In this structure, the copper plating layers 28 acting as circuit patterns are buried in the first insulating layer 24. A conductor layer 29 is formed on the substrate 22. The conductor layers 26 and 29 are removed by etching with resist films 31 of the specific pattern, which are formed on the plating layers 28 of the substrate, used as a mask. A second insulating layer 34 having conductor via holes 33 formed therein is formed on circuit patterns 32 having the copper plating layers 28, the peripheries of which are covered by the conductor layers 26 and 29, on the substrate. And then a third insulating layer 35 embedded with the circuit patterns 32 is formed on the second insulating layer 34. Thereby no step is produced between the surfaces of the insulating layers 24 and 35 and those of the circuit patterns 32.

Description

【発明の詳細な説明】 〔概 要〕 薄膜多層回路基板の製造方法に関し、 薄膜多層回路基板を形成するための多層に形成した絶縁
層上に形成される導体層パターンによって、絶縁層の表
面と導体層の表面の間に段差が形成されるのを防止する
のを目的とし、 基板上の複数層の絶縁層上に形成された導体層パターン
同志が導体ビアホールにて接続された回路基板の製造に
於いて、 前記絶縁層の導体層パターン形成予定領域に予め、凹部
を形成し、該凹部内に導体層パターンを埋設形成するこ
とで構成する。
[Detailed Description of the Invention] [Summary] Regarding a method for manufacturing a thin film multilayer circuit board, a conductor layer pattern formed on an insulating layer formed in multiple layers for forming a thin film multilayer circuit board is used to form a conductive layer pattern on the surface of the insulating layer. Manufacturing of circuit boards in which conductor layer patterns formed on multiple insulating layers on a board are connected by conductor via holes in order to prevent the formation of steps between the surfaces of the conductor layers. In this method, a recess is formed in advance in a region of the insulating layer where a conductor layer pattern is to be formed, and a conductor layer pattern is embedded in the recess.

〔産業上の利用分野〕[Industrial application field]

本発明は薄膜多層回路基板の製造方法に関する。 The present invention relates to a method for manufacturing a thin film multilayer circuit board.

絶縁耐圧の向上、大電力を消費する電子部品を搭載する
プリント配線基板として、薄膜多層回路基板が用いられ
ている。
Thin-film multilayer circuit boards are used as printed wiring boards with improved dielectric strength and on which electronic components that consume large amounts of power are mounted.

このような薄膜多層回路基板はセラミック基板上に導体
ビアホールを有する絶縁層を多層に積層し、該絶8i層
上に前記導体ビアホールと接続する導体層パターンを形
成して形成されるが、この導体層パターンによって導体
層表面と絶縁層表面との間に段差が生じ、形成された薄
膜多層回路基板の表面が平坦に成らず、該基板上に搭載
する電子部品の半田付は等の作業に支障を来すため、絶
縁層表面と導体層パターンの表面の間で、その段差を無
くすことが望まれる。
Such a thin film multilayer circuit board is formed by laminating multiple insulating layers having conductor via holes on a ceramic substrate, and forming a conductor layer pattern connected to the conductor via holes on the insulation layer. The layer pattern creates a level difference between the conductor layer surface and the insulating layer surface, making the surface of the formed thin film multilayer circuit board uneven, which hinders work such as soldering of electronic components mounted on the board. Therefore, it is desirable to eliminate the level difference between the surface of the insulating layer and the surface of the conductive layer pattern.

〔従来の技術〕[Conventional technology]

従来の薄膜多層回路基板の製造方法を説明すると、グリ
ーンシートにパンチングにより所定のパターンに孔開け
し、該孔開けした箇所に導電性ペーストを充填した後、
該シート上に導電性ペーストを所定のパターンに形成後
、積層し、次いで焼成することで第3図(a)に示すよ
うに、導体層パターン1上に導体ビアホール2を形成し
たセラミンク基板3を形成する。次いでこの基板3上に
、スパッタ法、或いは茂着法によりクロム(Cr)と、
銅(Cu)層の二層構造の導体層4を形成する。
To explain the conventional manufacturing method of thin film multilayer circuit boards, holes are punched into a green sheet in a predetermined pattern, and after filling the punched areas with conductive paste,
After forming a conductive paste in a predetermined pattern on the sheet, it is laminated and then fired to form a ceramic substrate 3 with conductor via holes 2 formed on the conductor layer pattern 1, as shown in FIG. 3(a). Form. Next, chromium (Cr) is deposited on this substrate 3 by a sputtering method or a mowing method.
A conductor layer 4 having a two-layer structure of copper (Cu) layers is formed.

次いで第3図(b)に示すようにホトレジスト膜101
をマスクとして、電解メンキ法により所定パターンの銅
メツキ層5Aを20μm程度の厚さで形成後、該レジス
ト膜101を除去する。
Next, as shown in FIG. 3(b), a photoresist film 101 is formed.
Using as a mask, a copper plating layer 5A having a predetermined pattern is formed to a thickness of about 20 μm by the electroplating method, and then the resist film 101 is removed.

次いでパターン形成された銅メンキN5Aをマスクとし
て導体層4をエツチング除去する。
Next, the conductor layer 4 is etched away using the patterned copper foil N5A as a mask.

次いで第3図(C)に示すように、該基板上にクロム(
Cr)層5Bを1500人程度0厚さで蒸着法により形
成した後、該クロム層をレジスト膜(図示せず)を用い
てエンチングにより所定パターンに形成して、第3図(
d)に示すように導体層4.銅メ・ンキ層5A、Cr層
5Bよりなる三層構造の第1導体層パターン5を形成す
る。
Next, as shown in FIG. 3(C), chromium (
After forming the chromium layer 5B to a thickness of about 1,500 by vapor deposition, the chromium layer was formed into a predetermined pattern by etching using a resist film (not shown), as shown in FIG.
As shown in d), the conductor layer 4. A first conductor layer pattern 5 having a three-layer structure consisting of a copper coating layer 5A and a Cr layer 5B is formed.

次いで該基板上に感光性ポリイミド膜よりなる第1絶縁
層6を形成し、該第1絶8を層6を所定パターンにマス
ク露光した後、未露光部をエンチングして前記第1導体
層パターン5上に絶縁層ビアポール7を形成する。
Next, a first insulating layer 6 made of a photosensitive polyimide film is formed on the substrate, the first insulation layer 8 is exposed to light using a mask in a predetermined pattern, and the unexposed portions are etched to form the first conductive layer pattern. An insulating layer via pole 7 is formed on the insulating layer via pole 5.

次いで該第1絶縁層6上に、Crと銅(Cu)よりなる
二層構造の導体層8をスパッタ法で形成するとともに絶
縁層ビアポールフ内にも前記した導体8を形成して導体
ビアホール9とする。
Next, a conductor layer 8 having a two-layer structure made of Cr and copper (Cu) is formed on the first insulating layer 6 by sputtering, and the aforementioned conductor 8 is also formed in the insulating layer via hole 9 to form a conductor via hole 9. do.

次いで、図示しないがレジスト膜をマスクとして用いて
第3図(e)に示すように、メツキ法により上記導体ビ
アポール9上にCuよりなる導体層パターン8Aを形成
後、前記第1導体層パターン5の形成と同様な手法で導
体層8.銅メツキ層8A、 Crの蒸着層8Bよりなる
第2導体層パターン10を形成する。
Next, as shown in FIG. 3(e) using a resist film (not shown) as a mask, a conductor layer pattern 8A made of Cu is formed on the conductor via pole 9 by a plating method, and then the first conductor layer pattern 5 is Conductor layer 8. A second conductor layer pattern 10 consisting of a copper plating layer 8A and a Cr vapor deposition layer 8B is formed.

次いで第3図(f)に示すように、該第2導体層パター
ン10を含む基板上に感光性ポリイミド膜よりなる第2
絶縁層11を形成後、マスクを用いて所定パターンに露
光後、未露光部をエツチングして第2絶縁層ビアホール
12を形成する。
Next, as shown in FIG. 3(f), a second photosensitive polyimide film is formed on the substrate including the second conductor layer pattern 10.
After forming the insulating layer 11, it is exposed to light in a predetermined pattern using a mask, and the unexposed portions are etched to form the second insulating layer via hole 12.

次いで該第2絶縁層11上に、Cr、Cu層よりなる導
体層13を形成する。
Next, a conductor layer 13 made of Cr and Cu layers is formed on the second insulating layer 11.

次いで第3図((イ)に示すように、前記第1導体層パ
ターン5.第2導体層パターン10の形成と同様な方法
で、第3導体層パターン14を形成後、更に第3絶縁層
15を形成後、更に第3絶縁層ビアホール16を形成し
、更にこの第3絶縁層ビアホール16を前記した方法で
導体ビアホールに変化させ、上記した方法を、繰り返し
て薄膜多層回路基板を形成している。
Next, as shown in FIG. 3(A), after forming a third conductor layer pattern 14 in the same manner as in the formation of the first conductor layer pattern 5 and the second conductor layer pattern 10, a third insulating layer pattern 14 is formed. 15, a third insulating layer via hole 16 is further formed, and the third insulating layer via hole 16 is further changed into a conductor via hole by the method described above, and the method described above is repeated to form a thin film multilayer circuit board. There is.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

然し、上記した従来の方法では第1導体層パターン5と
セラミック基板3との表面、第2導体層パターン10の
表面と第1絶縁層6の表面、および第3導体層パターン
14の表面と、第2絶縁層11の表面との間に段差があ
り、この段差は回路となる各導体層パターン5.10.
14の厚さを現在の20μmの厚さより50amの厚さ
迄、分厚くして導体抵抗を少なくしようとすると、絶縁
層の厚さを200 μm程度の厚さにする必要があり、
そのため、益々段差′が生じ、形成される多層薄膜回路
基板の表面の平坦化が困難となる。また導体層パターン
と絶縁層の段差を解消するため、絶縁層を厚く形成して
平坦化を図ろうとすると、絶縁層を非常に厚く形成する
必要がある。
However, in the conventional method described above, the surfaces of the first conductor layer pattern 5 and the ceramic substrate 3, the surface of the second conductor layer pattern 10 and the surface of the first insulating layer 6, and the surface of the third conductor layer pattern 14, There is a step between the second insulating layer 11 and the surface of the second insulating layer 11, and this step is formed by each conductor layer pattern 5.10.
In order to reduce the conductor resistance by increasing the thickness of 14 from the current thickness of 20 μm to 50 μm, the thickness of the insulating layer must be approximately 200 μm.
As a result, steps are increasingly formed, making it difficult to flatten the surface of the multilayer thin film circuit board to be formed. Furthermore, in order to eliminate the level difference between the conductor layer pattern and the insulating layer, if an attempt is made to form the insulating layer thickly to achieve planarization, it is necessary to form the insulating layer very thickly.

このように段差が生じると、絶縁層を多層化するにつれ
て、絶縁層の表面に凹凸が生じ、該絶縁層に形成する導
体層パターンが高精度に形成できない問題がある。
When such a difference in level occurs, as the insulating layer is multilayered, the surface of the insulating layer becomes uneven, and there is a problem that a conductor layer pattern formed on the insulating layer cannot be formed with high precision.

本発明は上記した問題点を解決し、導体層パターンの表
面と絶縁層の表面で段差を発生しないようにした薄膜多
層回路基板の製造方法の提供を目的とする。
SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems and to provide a method for manufacturing a thin film multilayer circuit board in which a step is not generated between the surface of a conductor layer pattern and the surface of an insulating layer.

〔課題を解決するための手段〕[Means to solve the problem]

上記目的を達成する本発明の薄膜多層回路基板は、基板
上の複数層の絶に&層に形成された導体層パターン同志
が導体ビアホールにて接続された回路基板の製造に於い
て、 前記絶縁層の導体層パターン形成予定領域に予め、凹部
を形成し、該凹部内に導体層パターンを埋設形成するこ
とで構成する。
The thin-film multilayer circuit board of the present invention that achieves the above object is characterized in that, in the production of a circuit board in which conductor layer patterns formed in multiple layers on a board are connected to each other through conductor via holes, the above-mentioned insulation It is constructed by forming a recess in advance in a region of the layer where a conductor layer pattern is to be formed, and embedding the conductor layer pattern in the recess.

〔作 用〕[For production]

本発明の方法は、導体層パターンを形成すべき絶縁層の
領域に予め凹部を形成し、この凹部に導体層パターンを
埋設形成して導体層パターンの表面と絶縁層の表面が揃
うようにして、導体層パターンと絶縁層の表面の間で段
差を生じないようにする。
In the method of the present invention, a recess is formed in advance in the region of the insulating layer where the conductor layer pattern is to be formed, and the conductor layer pattern is buried in the recess so that the surface of the conductor layer pattern and the surface of the insulating layer are aligned. , Avoid creating a step difference between the conductor layer pattern and the surface of the insulating layer.

〔実施例〕〔Example〕

以下、図面を用いて本発明の一実施例につき詳細に説明
する。
Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.

第1図(a)に示すように、導体パターン21と導体ビ
アホール23を内部に形成したセラミック基板22上に
、感光性ポリイミド膜より成る第1絶縁層24を形成後
、マスク露光法を用いて露光した後、未露光部をエツチ
ングして導体ビアホール23上に開口部25を形成する
As shown in FIG. 1(a), a first insulating layer 24 made of a photosensitive polyimide film is formed on a ceramic substrate 22 in which a conductive pattern 21 and a conductive via hole 23 are formed, and then a first insulating layer 24 made of a photosensitive polyimide film is formed using a mask exposure method. After exposure, the unexposed portion is etched to form an opening 25 above the conductor via hole 23.

次いで第1図(b)に示すように、前記開口部25を設
けた第1絶縁層24上にクロム(Cr)と銅(Cu)よ
り成る導体層26を形成する。
Next, as shown in FIG. 1(b), a conductor layer 26 made of chromium (Cr) and copper (Cu) is formed on the first insulating layer 24 in which the opening 25 is provided.

次いで第1図(C)に示すように、前記した開口部25
を除く基板上にメツキのマスクとなるレジストパターン
27を形成する。
Next, as shown in FIG. 1(C), the opening 25 described above is opened.
A resist pattern 27 serving as a plating mask is formed on the substrate except for the plating.

次いで第1図(d)に示すように、前記レジストパター
ン27をマスクとして電解メツキ法により前記した開口
部25内に銅メツキ層28を形成する。
Next, as shown in FIG. 1(d), a copper plating layer 28 is formed in the opening 25 by electrolytic plating using the resist pattern 27 as a mask.

次いで第1図(e)に示すように、前記レジストパター
ン27を除去する。
Next, as shown in FIG. 1(e), the resist pattern 27 is removed.

このようにすれば回路パターンとなる銅メツキ層28が
第1絶縁層24に埋設形成されたことになる。
In this way, the copper plating layer 28 serving as a circuit pattern is embedded in the first insulating layer 24.

次いで第1図(f)に示すように、該基板22上にクロ
ム(Cr)よりなる導体層29をスパッタ法等により形
成し、後の工程で該基板上に形成する層間絶縁層との密
着度を高めるようにする。
Next, as shown in FIG. 1(f), a conductor layer 29 made of chromium (Cr) is formed on the substrate 22 by sputtering or the like, and is bonded to an interlayer insulating layer to be formed on the substrate in a later step. Try to increase the level.

次いで・第1図(局に示すように、該基板のメツキ層2
8上に所定パターンのレジスト膜31を形成する。
Next, as shown in Fig. 1, the plating layer 2 of the substrate is
A resist film 31 having a predetermined pattern is formed on the resist film 8 .

次いで第1図(h)に示すように、該レジスト1模31
をマスクとしてエツチングにより導体層26.29をエ
ツチング除去する。
Next, as shown in FIG. 1(h), the resist 1 pattern 31
The conductor layers 26 and 29 are removed by etching using the mask as a mask.

次いで第1図(i)に示すように、該レジスト膜31を
除去する。
Next, as shown in FIG. 1(i), the resist film 31 is removed.

次いで第1図(j)に示すように、該基板上の銅メツキ
層28の周囲が導体N26.29で被覆された回路パタ
ーン32上に前記した第1図(a)より第1図(i)迄
の工程の内で第1図(f)の工程のみを除いた方法を用
いて導体ビアホール33を形成した感光性ポリイミド膜
よりなる第2絶縁層34を形成する。
Next, as shown in FIG. 1(j), the circuit pattern 32 in which the periphery of the copper plating layer 28 on the board is covered with conductor N26. A second insulating layer 34 made of a photosensitive polyimide film in which a conductor via hole 33 is formed is formed by using the method of steps up to ) excluding only the step shown in FIG. 1(f).

次いで該第2絶縁層34上に前記した第1図(a)より
第1図(i)までの工程を用いて、銅メツキ層28の周
囲が導体層26.29で被覆された回路パターン32を
埋設形成した感光性ポリイミド膜よりなる第3絶縁層3
5を形成する。このようにしてセラミック基板22上に
回路パターン32が形成された第1絶縁層、導体ビアポ
ール33が形成された第2絶縁層、回路パターン32が
形成された第3絶縁層35が順次形成される。そしてこ
れ等絶縁層を順次積層形成する。このようにすると、こ
れら回路パターン32を形成する導体層26 、29で
被覆された銅メツキ層28で形成された回路パターン3
2は、第1絶縁層24゜第3絶縁層35内に埋設形成さ
れているので、絶縁層24.35の表面と、回路パター
ン32の表面の間に段差を生じない。
Next, a circuit pattern 32 in which the periphery of the copper plating layer 28 is covered with a conductor layer 26, 29 is formed on the second insulating layer 34 using the steps from FIG. A third insulating layer 3 made of a photosensitive polyimide film embedded with
form 5. In this way, a first insulating layer on which a circuit pattern 32 is formed, a second insulating layer on which a conductor via pole 33 is formed, and a third insulating layer 35 on which a circuit pattern 32 is formed are sequentially formed on the ceramic substrate 22. . Then, these insulating layers are sequentially laminated. In this way, the circuit pattern 3 formed of the copper plating layer 28 covered with the conductor layers 26 and 29 forming these circuit patterns 32
2 is buried in the first insulating layer 24 and the third insulating layer 35, so that no step is created between the surface of the insulating layer 24, 35 and the surface of the circuit pattern 32.

上記した方法を用いると、第2図に示すように、多層に
形成された絶縁層41.42,43,44.45に前記
回路パターン32形成と同様な手法を用いて導体層パタ
ーン51.52A、52B、53A、53B、54A、
54B、55を形成して断面が額縁状で、紙面に対して
垂直方向に伸びる電源、アースパターン(G/V) 5
6を形成し、前記絶縁層43に前記額縁状の電源、アー
スパターン56の中央部に前記回路パターン32を形成
するのと同様な手法で紙面に垂直方向に伸びる信号回路
パターン57を形成すると、薄膜多層同軸回路基板を形
成できる。
When the above-described method is used, as shown in FIG. , 52B, 53A, 53B, 54A,
A power supply and ground pattern (G/V) 5 which forms 54B and 55 and has a frame-like cross section and extends perpendicularly to the plane of the paper.
6, and a signal circuit pattern 57 extending perpendicular to the plane of the paper is formed in the same manner as in forming the circuit pattern 32 in the center of the frame-shaped power supply and ground pattern 56 on the insulating layer 43. A thin film multilayer coaxial circuit board can be formed.

また絶縁層42.44に前記した導体ビアホール33を
形成するのと同様な手法を用いて、導体ビアホール層5
8.59を形成し、信号回路パターン57と額縁状の電
源、アースパターン56間を接続する薄膜多層同軸回路
基板を形成できる。
Further, the conductor via hole layer 5 is formed using the same method as that for forming the conductor via hole 33 described above in the insulating layer 42, 44.
8.59 can be formed to form a thin film multilayer coaxial circuit board that connects the signal circuit pattern 57 and the frame-shaped power supply/ground pattern 56.

以上述べたように、本発明の方法によれば、セラミック
基板上の絶縁層内に導体層が埋設形成されて回路パター
ンが形成されているため、導体層表面と絶8i層表面と
の間に段差が発生せず、これら絶縁層を多層構造に形成
すると表面が平坦な薄膜多層回路基板が得られる。
As described above, according to the method of the present invention, a circuit pattern is formed by embedding a conductor layer in an insulating layer on a ceramic substrate. When these insulating layers are formed into a multilayer structure without generating any steps, a thin film multilayer circuit board with a flat surface can be obtained.

〔発明の効果〕〔Effect of the invention〕

以上の説明から明らかなように本発明によれば、表面が
平坦な多層薄膜回路基板が得られる効果がある。
As is clear from the above description, according to the present invention, a multilayer thin film circuit board with a flat surface can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は(a)より第1図供)までは、本発明の方法の
一実施例の工程を示す断面図、 第2図は本発明の方法で形成した同軸回路パターンの説
明図、 第3図(a)より第3図(g)までは、従来の方法の工
程を示す断面図である。 図において、 21導体パターン、22はセラミンク基板、23は導体
ビアホール、24は第1絶縁層、25は開口部、26は
導体層、27はレジストパターン、28はCuメツキ層
、29は導体層、31はレジスト膜、32は回路パター
ン、33は導体ビアホール、34は第2絶縁層、35は
第3絶縁層、41,42.43,44.45は絶縁層、
51.52A52B、53A、53B、54八、54B
、55は導体層パターン、56は電源、アースパターン
、57は信号回路パターン、58.59は導体ビアホー
ルを示す。 444曙の歳晶義衣lで不し/l氷遭1q1・傾【;末
T宇部劇”面図第1図 第1図 不杯明/lγ;5−幻もシT屑窃末↑材面図te) 従よ/1ズ項−工材会末υ眸面図
1A to 1D are cross-sectional views showing the steps of an embodiment of the method of the present invention; FIG. 2 is an explanatory diagram of a coaxial circuit pattern formed by the method of the present invention; 3(a) to 3(g) are cross-sectional views showing the steps of the conventional method. In the figure, 21 is a conductor pattern, 22 is a ceramic substrate, 23 is a conductor via hole, 24 is a first insulating layer, 25 is an opening, 26 is a conductor layer, 27 is a resist pattern, 28 is a Cu plating layer, 29 is a conductor layer, 31 is a resist film, 32 is a circuit pattern, 33 is a conductive via hole, 34 is a second insulating layer, 35 is a third insulating layer, 41, 42.43, 44.45 are insulating layers,
51.52A52B, 53A, 53B, 548, 54B
, 55 is a conductor layer pattern, 56 is a power supply and ground pattern, 57 is a signal circuit pattern, and 58 and 59 are conductor via holes. 444 Akebono no Saisho Gii l de no / l Ice Encounter 1q1・Tilt [; End of T Ube Geki” Menu Figure 1 Figure 1 Fupai Akira/lγ; Figure te) Follow / Section 1 - End view of construction material association

Claims (1)

【特許請求の範囲】[Claims]  基板(22)上の複数層の絶縁層(24,34,35
)上に形成された導体層パターン(32)同志が導体ビ
アホール(33)にて接続された回路基板の製造に於い
て、前記絶縁層(24,34,35)の導体層パターン
(33)形成予定領域に予め、凹部(25)を形成し、
該凹部内に導体層パターン(33)を埋設形成すること
を特徴とする薄膜多層回路基板の製造方法。
Multiple insulating layers (24, 34, 35) on the substrate (22)
) Formation of the conductor layer pattern (33) of the insulating layer (24, 34, 35) in the production of a circuit board in which the conductor layer patterns (32) formed on the insulating layer (24, 34, 35) are connected through conductor via holes (33). forming a recess (25) in advance in the planned area;
A method for manufacturing a thin film multilayer circuit board, characterized in that a conductor layer pattern (33) is embedded in the recess.
JP23833588A 1988-09-22 1988-09-22 Manufacture of thin film multilayer circuit board Pending JPH0286193A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23833588A JPH0286193A (en) 1988-09-22 1988-09-22 Manufacture of thin film multilayer circuit board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23833588A JPH0286193A (en) 1988-09-22 1988-09-22 Manufacture of thin film multilayer circuit board

Publications (1)

Publication Number Publication Date
JPH0286193A true JPH0286193A (en) 1990-03-27

Family

ID=17028677

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23833588A Pending JPH0286193A (en) 1988-09-22 1988-09-22 Manufacture of thin film multilayer circuit board

Country Status (1)

Country Link
JP (1) JPH0286193A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6756675B1 (en) * 1996-08-20 2004-06-29 Seiko Epson Corporation Semiconductor device and a method for making the same that provide arrangement of a connecting region for an external connecting terminal

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63104398A (en) * 1986-10-21 1988-05-09 日本特殊陶業株式会社 Manufacture of multilayer interconnection board

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63104398A (en) * 1986-10-21 1988-05-09 日本特殊陶業株式会社 Manufacture of multilayer interconnection board

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6756675B1 (en) * 1996-08-20 2004-06-29 Seiko Epson Corporation Semiconductor device and a method for making the same that provide arrangement of a connecting region for an external connecting terminal

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