JPH0286149A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH0286149A JPH0286149A JP23859188A JP23859188A JPH0286149A JP H0286149 A JPH0286149 A JP H0286149A JP 23859188 A JP23859188 A JP 23859188A JP 23859188 A JP23859188 A JP 23859188A JP H0286149 A JPH0286149 A JP H0286149A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- resin
- resin composition
- semiconductor device
- tert
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 239000003822 epoxy resin Substances 0.000 claims abstract description 41
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 41
- 239000000203 mixture Substances 0.000 claims abstract description 21
- 239000005011 phenolic resin Substances 0.000 claims abstract description 12
- 239000003963 antioxidant agent Substances 0.000 claims abstract description 11
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 claims abstract description 10
- 230000003078 antioxidant effect Effects 0.000 claims abstract description 10
- XQVWYOYUZDUNRW-UHFFFAOYSA-N N-Phenyl-1-naphthylamine Chemical compound C=1C=CC2=CC=CC=C2C=1NC1=CC=CC=C1 XQVWYOYUZDUNRW-UHFFFAOYSA-N 0.000 claims abstract description 4
- -1 2,6-di-tert-butyl-4-methylphenyl Chemical group 0.000 claims abstract description 3
- 238000007789 sealing Methods 0.000 abstract description 16
- 238000002845 discoloration Methods 0.000 abstract description 8
- 235000006708 antioxidants Nutrition 0.000 abstract 2
- 229950011260 betanaphthol Drugs 0.000 abstract 1
- 229920005989 resin Polymers 0.000 description 20
- 239000011347 resin Substances 0.000 description 20
- 238000007254 oxidation reaction Methods 0.000 description 13
- 229920003986 novolac Polymers 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000003086 colorant Substances 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000006082 mold release agent Substances 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000004040 coloring Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000011342 resin composition Substances 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 239000004841 bisphenol A epoxy resin Substances 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- BXKDSDJJOVIHMX-UHFFFAOYSA-N edrophonium chloride Chemical compound [Cl-].CC[N+](C)(C)C1=CC=CC(O)=C1 BXKDSDJJOVIHMX-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000012170 montan wax Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、信鯨性、特に耐湿信頼性に優れ、かつ表面
の変色が防止された半導体装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a semiconductor device that has excellent reliability, particularly moisture resistance, and is prevented from discoloring its surface.
ダイオード、トランジスタ、ＩＣ，ＬＳＩ等の半導体素
子は、一般に、エポキシ樹脂を主成分とした樹脂組成物
によって封止され装置化されている。上記エポキシ樹脂
は、電気特性６機械特性耐薬品性等に優れており、かつ
安価で経済的にも優れていることから、信頼性の高い封
止材料として半導体素子の封止に広く利用されている。Semiconductor elements such as diodes, transistors, ICs, and LSIs are generally sealed into devices using a resin composition containing epoxy resin as a main component. The above-mentioned epoxy resin has excellent electrical properties, mechanical properties, chemical resistance, etc., and is also inexpensive and economical, so it is widely used as a highly reliable encapsulation material for encapsulating semiconductor devices. There is.
このようなエポキシ樹脂を主成分とした樹脂組成物には
各種の硬化剤が用いられている。Various curing agents are used in such resin compositions containing epoxy resin as a main component.
ところで、最近では、半導体装置は、その種類、用途に
応じて様々な色に着色された封止樹脂で封止され使い分
けされる傾向にある。しかしながら、エポキシ樹脂組成
物を用いて封止された半導体装置のあるものでは、その
封止樹脂の表面が熱光、酸素等の影響を受は易く容易に
酸化反応を引き起こし、その結果、変色する。このため
、せっかく封止樹脂を着色して用途等を識別し易くして
も、上記酸化反応に起因する封止樹脂の変色が生起する
と、封止樹脂に施した着色がぼやけるため、半導体装置
の色にもとづく区別が困難になるという問題を有してい
る。さらに、上記酸化反応により封止樹脂が劣化し耐湿
性が低下するという問題も生じる。Nowadays, semiconductor devices tend to be sealed with sealing resins colored in various colors depending on the type and purpose of the semiconductor devices. However, in some semiconductor devices sealed using epoxy resin compositions, the surface of the sealing resin is easily affected by heat, light, oxygen, etc. and easily causes oxidation reactions, resulting in discoloration. . For this reason, even if the encapsulating resin is colored to make it easier to identify its purpose, if the encapsulating resin discolors due to the oxidation reaction, the coloring applied to the encapsulating resin will become blurred, resulting in the failure of semiconductor devices. The problem is that it becomes difficult to distinguish based on color. Furthermore, the oxidation reaction causes the problem that the sealing resin deteriorates and moisture resistance decreases.
この発明は、このような事情に鑑みなされたもので、酸
化反応による変色が防止され、かつ耐湿信転性に優れた
半導体装置の提供を目的とする。The present invention was made in view of the above circumstances, and an object of the present invention is to provide a semiconductor device that is prevented from discoloring due to oxidation reactions and has excellent moisture resistance.
〔問題点を解決するための手段］
上記の目的を達成するため、この発明の半導体装置は、
下記の（Ａ）〜（Ｃ）成分を含有するエポキシ樹脂組成
物を用いて半導体素子を封止するという構成をとる。[Means for solving the problems] In order to achieve the above object, the semiconductor device of the present invention has the following features:
The structure is such that a semiconductor element is sealed using an epoxy resin composition containing the following components (A) to (C).
（Ａ）エポキシ樹脂。(A) Epoxy resin.
（Ｂ）フェノール樹脂。(B) Phenol resin.
（Ｃ）オクタデシル−３−（３’ ５’−ジーｔ、ｅ
ｒｔ、−ブチルー４′−ハイドロフェニル）−プロピオ
ネート、２，６
−ジ−ｔｅｒｔ−ブチル−４−メチル
フェニル、β−ナフトール、フェニル
−α−ナフチルアミンからなる群から
選ばれた少なくとも一つの酸化防止剤。(C) Octadecyl-3-(3'5'-jit, e
at least one antioxidant selected from the group consisting of rt,-butyl-4'-hydrophenyl)-propionate, 2,6-di-tert-butyl-4-methylphenyl, β-naphthol, and phenyl-α-naphthylamine. .
（作用）
すなわち、本発明者らは、封止樹脂の酸化反応による変
色の防止を目的として、従来から用いられているエポキ
シ樹脂組成物中の各成分を中心に研究を重ねた。その結
果、封止樹脂の酸化反応にはエポキシ樹脂組成物中の硬
化剤であるフェノール樹脂が酸化反応に大きく↓響して
いることを突き止めた。そして、さらに研究を重ねた結
果、上記フェノール樹脂が関与する酸化反応を防止する
ため上記のような酸化防止剤を配合すると、封止樹脂の
酸化反応が生じず、その結果、封止樹脂表面の変色が防
止されると同時に、樹脂硬化体の劣化が防止され上記劣
化にもとづく半導体装置の耐湿信頬性の低下が阻止され
ることを見出しこの発明に到達した。(Function) That is, the present inventors have conducted research focusing on each component in a conventionally used epoxy resin composition for the purpose of preventing discoloration due to oxidation reaction of the sealing resin. As a result, it was found that the phenol resin, which is a curing agent in the epoxy resin composition, has a large influence on the oxidation reaction of the sealing resin. As a result of further research, it was found that when the above-mentioned antioxidant was added to prevent the oxidation reaction involving the phenolic resin, the oxidation reaction of the sealing resin did not occur, and as a result, the surface of the sealing resin deteriorated. The present invention was achieved by discovering that discoloration is prevented, and at the same time, deterioration of the cured resin product is prevented, and deterioration of the moisture resistance of the semiconductor device due to the deterioration is prevented.
この発明に用いるエポキシ樹脂組成物は、エポキシ樹脂
（Ａ成分）とフェノール樹脂（Ｂ成分）と酸化防止剤（
Ｃ成分）とを用いて得られるものであって、通常、粉末
状もしくはそれを打錠したタブレット状になっている。The epoxy resin composition used in this invention consists of an epoxy resin (component A), a phenol resin (component B), and an antioxidant (component B).
It is obtained using component C) and is usually in the form of a powder or a tablet formed by compressing it.
上記Ａ成分となるエポキシ樹脂は、特に制限するもので
はなく、フェノールノボラック型エポキシ樹脂、クレゾ
ールノボラック型エポキシ樹脂。The epoxy resin serving as the above-mentioned component A is not particularly limited, and may be a phenol novolac type epoxy resin or a cresol novolac type epoxy resin.
ビスフェノールＡ型エポキシ樹脂等、従来から半導体装
置の封止樹脂として用いられている各種エポキシ樹脂が
あげられ、単独でもしくは併せて用いられる。上記エポ
キシ樹脂の中でも、エポキシ当量１７０〜３００．軟化
点６５〜９０のノボランク型エポキシ樹脂が好結果をも
たらし、例えば、フェノールノボラック型エポキシ樹脂
、タレゾールノボラック型エポキシ樹脂等があげられる
。Various epoxy resins, such as bisphenol A epoxy resin, which have been conventionally used as sealing resins for semiconductor devices, can be used alone or in combination. Among the above epoxy resins, the epoxy equivalent is 170 to 300. Novolank type epoxy resins having a softening point of 65 to 90 give good results, such as phenol novolak type epoxy resins, Talesol novolak type epoxy resins, and the like.
上記エポキシ樹脂とともに用いられるＢ成分のフェノー
ル樹脂は、上記エポキシ樹脂の硬化剤として作用するも
のであり、フェノールノボラック樹脂、タレゾールノボ
ラック樹脂等が好適に用いられる。これらのノボラック
樹脂は、軟化点が５０〜１１０°Ｃ１水酸基当量が７０
〜１５０°Ｃのものを用いることが好ましい。The phenol resin as component B used together with the epoxy resin acts as a curing agent for the epoxy resin, and phenol novolac resin, talesol novolac resin, etc. are preferably used. These novolak resins have a softening point of 50 to 110°C and a hydroxyl equivalent of 70.
It is preferable to use one with a temperature of ~150°C.
上記Ａ成分のエポキシ樹脂とＢ成分のフェノール樹脂と
の配合比は、上記エポキシ樹脂中のエポキシ基１当量当
たりフェノール樹脂中の水酸基が０、５〜１．５当量の
範囲になるように配合することが好ましい。すなわち、
エポキシ樹脂とフェノール樹脂の配合比が上記範囲を外
れると、エポキシ樹脂組成物の硬化性が劣る傾向がみら
れるからである。The blending ratio of the epoxy resin as component A and the phenol resin as component B is such that the hydroxyl group in the phenol resin is in the range of 0.5 to 1.5 equivalents per 1 equivalent of epoxy group in the epoxy resin. It is preferable. That is,
This is because if the blending ratio of the epoxy resin and the phenol resin is out of the above range, the curability of the epoxy resin composition tends to be poor.
上記Ｃ成分の特殊な酸化防止剤は、Ｂ成分のフェノール
樹脂の酸化防止剤として作用するものであり、例えば、
下記の弐■〜■に示すものが、単独でもしくは併せて使
用される。The above-mentioned special antioxidant of component C acts as an antioxidant of the phenolic resin of component B, and for example,
Those shown in items ~■ below can be used alone or in combination.
■オクタデシルー３−（３’ ５’−ジーｔｅｒｔ、
−７’チルー４′−ハイドロフェニル）−プロピオネー
ト
Ｃ（ＣＨ３）３
■２，６−ジーｔｅｒｔ−ブチルー４−メチルフェニル
凸ｌ
■β−ナフトール
■フェニルーα−ナフチルアミン
このようなＣ成分の特殊な酸化防止剤の含有量は、エポ
キシ樹脂組成物中の有機成分（Ａ＋Ｂ）１００重量部（
以下「部」と略す）に対して３〜６部の範囲になるよう
に設定することが好ましい。■Octadecyl 3-(3'5'-G tert,
-7'-thiru-4'-hydrophenyl)-propionate C(CH3)3 ■2,6-di-tert-butyl-4-methylphenyl convex l ■β-naphthol ■Phenyl-α-naphthylamine Special oxidation of such C component The content of the inhibitor is 100 parts by weight of the organic components (A+B) in the epoxy resin composition (
It is preferable to set the amount in the range of 3 to 6 parts (hereinafter abbreviated as "parts").
なお、この発明に用いられるエポキシ樹脂組成物には、
上記各成分以外に必要に応じて硬化促進剤、離型剤１着
色剤、充填剤、シランカップリング剤等が用いられる。The epoxy resin composition used in this invention includes:
In addition to the above-mentioned components, a curing accelerator, a mold release agent, a coloring agent, a filler, a silane coupling agent, etc. may be used as necessary.
上記硬化促進剤としては、三級アミン、四級アンモニウ
ム塩、イミダヅール類、有機すン系化合物およびホウ素
化合物等を単独でもしくは併せて用いることが行われる
。As the curing accelerator, tertiary amines, quaternary ammonium salts, imidadules, organosun compounds, boron compounds, and the like may be used alone or in combination.
上記離型剤としては、公知のステアリン酸、カルナバワ
ックス、モンタンワックス等のワックス類等を用いるこ
とができる。As the mold release agent, known waxes such as stearic acid, carnauba wax, and montan wax can be used.
上記充填剤としては、シリカ粉末等が適宜に用いられる
。なお、上記充填剤の含有量はエポキシ樹脂組成物全体
の６０〜８０重量％の範囲内に設定することが好ましい
。As the filler, silica powder or the like is appropriately used. Note that the content of the filler is preferably set within the range of 60 to 80% by weight of the entire epoxy resin composition.
この発明に用いられるエポキシ樹脂組成物は、例えばつ
ぎのようにして製造することができる。The epoxy resin composition used in this invention can be produced, for example, as follows.
すなわち、上記Ａ−Ｃ成分原料と、必要に応じて硬化促
進剤、離型剤５着色剤、充填剤、シランカップリング剤
等その他の添加剤を適宜配合する。That is, the raw materials for the A to C components are mixed with other additives such as a curing accelerator, a mold release agent, a coloring agent, a filler, and a silane coupling agent, if necessary.
つぎに、この配合物をミキシングロール機等の混練機に
かけて加熱状態で混練して溶融混合し、これを室温に冷
却したのち公知の手段によって粉砕し、必要に応じて打
錠するという一連の工程により目的とするエポキシ樹脂
組成物を得ることができる。Next, this compound is kneaded in a heated state using a kneading machine such as a mixing roll machine, melt-mixed, cooled to room temperature, pulverized by known means, and tableted as necessary. In this manner, the desired epoxy resin composition can be obtained.
このようなエポキシ樹脂組成物を用いての半導体素子の
封止は特に限定するものではなく、通常のトランスファ
ー成形等の公知のモールド方法により行うことができる
。Sealing of a semiconductor element using such an epoxy resin composition is not particularly limited, and can be performed by a known molding method such as ordinary transfer molding.
このようにして得られる半導体装置は、特殊な酸化防止
剤を含有するエポキシ樹脂組成物で封止されているため
、封止樹脂表面において酸化反応を生じず、よって酸化
反応に起因する変色が防止され、かつ封止樹脂硬化体の
劣化が抑制され耐湿信頼性に富むようになる。Since the semiconductor device obtained in this way is sealed with an epoxy resin composition containing a special antioxidant, oxidation reactions do not occur on the surface of the sealing resin, thus preventing discoloration caused by oxidation reactions. In addition, deterioration of the cured sealing resin body is suppressed, and moisture resistance and reliability are improved.
（発明の効果）
以上のように、この発明の半導体装置は、酸化防止剤を
含有する特殊なエポキシ樹脂組成物によって樹脂封止さ
れているため、封止樹脂表面において酸化反応が生じず
、その結果、酸化反応に起因する変色を防止することが
できる。したがって、種類、用途に応じて各種の色に着
色された半導体装置の封止樹脂では、その着色が変色に
よってぼやけることがない。また、封止樹脂表面の劣化
に伴う耐湿性の低下が防止され、耐湿信頼性が確保され
る。(Effects of the Invention) As described above, since the semiconductor device of the present invention is resin-sealed with a special epoxy resin composition containing an antioxidant, no oxidation reaction occurs on the surface of the sealing resin. As a result, discoloration caused by oxidation reactions can be prevented. Therefore, the sealing resin for semiconductor devices that is colored in various colors depending on the type and application will not have its coloring blurred due to discoloration. In addition, deterioration in moisture resistance due to deterioration of the surface of the sealing resin is prevented, and moisture resistance reliability is ensured.
つぎに、実施例について比較例と併せて説明する。Next, examples will be described together with comparative examples.
〔実施例１〜９、比較例１．２］
後記の第１表に示す原料を準備し、同表に示す割合で各
成分原料を配合し、ミキシングロール機（温度１００°
Ｃ）で５分間溶融混練を行い、冷却固化後粉砕し、目的
とする粉末状のエポキシ樹脂組成物を得た。なお、酸化
防止剤は、■オクタデシルー３− （３’ 、５’−ジ
ーｔｅｒｔ−ブチルー４′−ハイドロフェニル）プロピ
オネート、■２．６−ジ−ｔｅｒｔ−ブチル−４−メチ
ルフェニル、■β−ナフトール、■フェニルーα−ナフ
］１
チルアミン、■ンＣ−ｅ （ベンゾフェノン）を用い
た。[Examples 1 to 9, Comparative Example 1.2] The raw materials shown in Table 1 below were prepared, and each component raw material was blended in the proportions shown in the table, and the raw materials were mixed using a mixing roll machine (temperature 100°C).
In C), the mixture was melt-kneaded for 5 minutes, cooled and solidified, and then pulverized to obtain the desired powdered epoxy resin composition. In addition, the antioxidants include ■octadecyl-3-(3',5'-di-tert-butyl-4'-hydrophenyl)propionate, ■2,6-di-tert-butyl-4-methylphenyl, and ■β-naphthol. , (1) phenyl-α-naph]1 thylamine, and (2) C-e (benzophenone) were used.
（余 白 ）
以上の実施例および比較例によって得られた粉末状のエ
ポキシ樹脂組成物を用いてスパイラルフロー、ゲルタイ
ムの成形性および線膨張係数、ガラス転移温度１曲げ弾
性率１曲げ強度２体積抵抗率の一般物性を測定し、その
結果を第２表に示した。なお、スパイラルフローはＥＭ
ＭＩ−６６、ゲルタイムはＪＩＳ−に−５９６６に準拠
して測定した。また、線膨張係数３ガラス転移温度は、
Ｔｈｅｒｍａｌ ｍｅｃｈａｎｉｃａｌ ａｎａｌｙｓ
ｉｓ （ＴＭＡ、理学電機社製）にて測定し、曲げ弾
性率１曲げ強度は、テンシロン万能試験機（東洋ボール
ドウィン社製）にて測定した。(Margin) Using the powdered epoxy resin compositions obtained in the above Examples and Comparative Examples, spiral flow, gel time formability, coefficient of linear expansion, glass transition temperature 1 flexural modulus 1 flexural strength 2 volume resistance The general physical properties of the resin were measured and the results are shown in Table 2. In addition, the spiral flow is EM
MI-66 and gel time were measured in accordance with JIS-5966. In addition, the linear expansion coefficient 3 glass transition temperature is
Thermal mechanical analysis
is (TMA, manufactured by Rigaku Denki Co., Ltd.), and the bending elastic modulus 1 bending strength was measured using a Tensilon universal testing machine (manufactured by Toyo Baldwin Co., Ltd.).
つぎに得られた粉末状のエポキシ樹脂組成物を用い、半
導体素子をトランスファー成形（温度１７５°Ｃ×圧力
１０ ｋｇ／ｍｍ２）でモールドした後、１７５°ＣＸ
５ ｈ ｒで硬化させることにより半導体装置を得た。Next, using the obtained powdered epoxy resin composition, a semiconductor element was molded by transfer molding (temperature 175°C x pressure 10 kg/mm2), and then 175°C
A semiconductor device was obtained by curing for 5 hours.
このようにして得られた半導体装置について、プレッシ
ャークツカー状態（１２１°ＣＸ２ａｔｍＸ１００％Ｒ
Ｈ）に放置し、アルミニウム電極部の腐食の有無を観察
するＰＣＴテストを行った。また、２００ ’Ｃで５時
間放置した後の封止樹脂の表面の変色具合を目視により
判定した。その結果を上記エポキシ樹脂組成物の物性と
併せて第２表に示した。Regarding the semiconductor device obtained in this way, the pressure carrier state (121°CX2atmX100%R
H), and a PCT test was conducted to observe the presence or absence of corrosion on the aluminum electrode portion. Further, the degree of discoloration of the surface of the sealing resin after being left at 200'C for 5 hours was visually determined. The results are shown in Table 2 together with the physical properties of the epoxy resin composition.
（以下余白）
第２表の結果から、実施例品、比較測高とも成形性およ
び一般物性はかわらないが、それ以外の試験項目におい
て、実施測高は変色が防止され、かつ比較測高に比べて
耐湿信頼性が著しく向上していることがわかる。(Margins below) From the results in Table 2, the moldability and general physical properties of the example product and the comparative height measurement are the same, but in other test items, the actual height measurement was prevented from discoloring and compared to the comparative height measurement. It can be seen that the moisture resistance reliability is significantly improved.
特許出願人 日東電工株式会社 代理人 弁理士 四 秘 征 彦Patent applicant: Nitto Denko Corporation Agent: Patent Attorney Seihiko Shihiko
Claims (1)
脂組成物を用いて半導体素子を封止してなる半導体装置
。 （Ａ）エポキシ樹脂。 （Ｂ）フェノール樹脂。 （Ｃ）オクタデシル−３−（３′、５′−ジ−ｔｅｒｔ
−ブチル−４′−ハイドロ フェニル）−プロピオネート、２．６ −ジ−ｔｅｒｔ−ブチル−４−メチル フェニル、β−ナフトール、フェニル −α−ナフチルアミンからなる群から 選ばれた少なくとも一つの酸化防止剤。(1) A semiconductor device in which a semiconductor element is sealed using an epoxy resin composition containing the following components (A) to (C). (A) Epoxy resin. (B) Phenol resin. (C) Octadecyl-3-(3',5'-di-tert
At least one antioxidant selected from the group consisting of -butyl-4'-hydrophenyl)-propionate, 2,6-di-tert-butyl-4-methylphenyl, β-naphthol, and phenyl-α-naphthylamine.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23859188A JPH0286149A (en) | 1988-09-21 | 1988-09-21 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23859188A JPH0286149A (en) | 1988-09-21 | 1988-09-21 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0286149A true JPH0286149A (en) | 1990-03-27 |
Family
ID=17032475
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23859188A Pending JPH0286149A (en) | 1988-09-21 | 1988-09-21 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0286149A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0339322A (en) * | 1989-07-05 | 1991-02-20 | Hitachi Chem Co Ltd | Epoxy resin composition |
| JP2007224219A (en) * | 2006-02-24 | 2007-09-06 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for sealing semiconductor and semiconductor device |
| JP2007231128A (en) * | 2006-02-28 | 2007-09-13 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP2010111825A (en) * | 2008-11-10 | 2010-05-20 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for sealing semiconductor and semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6081223A (en) * | 1983-10-11 | 1985-05-09 | Toyota Central Res & Dev Lab Inc | Epoxy resin composition |
| JPS61200156A (en) * | 1985-02-28 | 1986-09-04 | Toyota Central Res & Dev Lab Inc | Epoxy resin composition |
-
1988
- 1988-09-21 JP JP23859188A patent/JPH0286149A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6081223A (en) * | 1983-10-11 | 1985-05-09 | Toyota Central Res & Dev Lab Inc | Epoxy resin composition |
| JPS61200156A (en) * | 1985-02-28 | 1986-09-04 | Toyota Central Res & Dev Lab Inc | Epoxy resin composition |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0339322A (en) * | 1989-07-05 | 1991-02-20 | Hitachi Chem Co Ltd | Epoxy resin composition |
| JP2007224219A (en) * | 2006-02-24 | 2007-09-06 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for sealing semiconductor and semiconductor device |
| JP2007231128A (en) * | 2006-02-28 | 2007-09-13 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP2010111825A (en) * | 2008-11-10 | 2010-05-20 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for sealing semiconductor and semiconductor device |
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