JPH028456B2 - - Google Patents

Info

Publication number
JPH028456B2
JPH028456B2 JP58135367A JP13536783A JPH028456B2 JP H028456 B2 JPH028456 B2 JP H028456B2 JP 58135367 A JP58135367 A JP 58135367A JP 13536783 A JP13536783 A JP 13536783A JP H028456 B2 JPH028456 B2 JP H028456B2
Authority
JP
Japan
Prior art keywords
impurity
layer
density
region
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58135367A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6027173A (ja
Inventor
Kimyoshi Yamazaki
Yasuaki Yamane
Yutaka Matsuoka
Naoki Kato
Masahiro Hirayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP58135367A priority Critical patent/JPS6027173A/ja
Publication of JPS6027173A publication Critical patent/JPS6027173A/ja
Publication of JPH028456B2 publication Critical patent/JPH028456B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP58135367A 1983-07-25 1983-07-25 電界効果トランジスタおよびその製造方法 Granted JPS6027173A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58135367A JPS6027173A (ja) 1983-07-25 1983-07-25 電界効果トランジスタおよびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58135367A JPS6027173A (ja) 1983-07-25 1983-07-25 電界効果トランジスタおよびその製造方法

Publications (2)

Publication Number Publication Date
JPS6027173A JPS6027173A (ja) 1985-02-12
JPH028456B2 true JPH028456B2 (enExample) 1990-02-23

Family

ID=15150068

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58135367A Granted JPS6027173A (ja) 1983-07-25 1983-07-25 電界効果トランジスタおよびその製造方法

Country Status (1)

Country Link
JP (1) JPS6027173A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61188972A (ja) * 1985-02-15 1986-08-22 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタ、およびその製造方法
JPS61188971A (ja) * 1985-02-15 1986-08-22 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタ、およびその製造方法
JPS61219177A (ja) * 1985-03-25 1986-09-29 Sumitomo Electric Ind Ltd シヨツトキ−ゲ−ト電界効果トランジスタ及びその製造方法
US5132752A (en) * 1985-05-22 1992-07-21 Hitachi, Ltd. Field effect transistor
JPS63308389A (ja) * 1987-06-10 1988-12-15 Toshiba Corp 半導体装置
EP2608269A1 (en) * 2011-12-23 2013-06-26 Imec Quantum well transistor, method for making such a quantum well transistor and use of such a quantum well transistor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59195873A (ja) * 1983-04-20 1984-11-07 Nec Corp 半導体装置

Also Published As

Publication number Publication date
JPS6027173A (ja) 1985-02-12

Similar Documents

Publication Publication Date Title
US4683487A (en) Heterojunction bipolar transistor
US6696725B1 (en) Dual-gate MOSFET with channel potential engineering
US6358783B1 (en) Semiconductor device and method of manufacturing the same
JPH0620132B2 (ja) 電界効果トランジスタ
JPH03775B2 (enExample)
US5518944A (en) MOS transistor and its fabricating method
US5098853A (en) Self-aligned, planar heterojunction bipolar transistor and method of forming the same
JPS58190071A (ja) 電界効果トランジスタの製造方法
KR970011641B1 (ko) 반도체 장치 및 제조방법
JPH1022398A (ja) トランジスタ製造用の絶縁体上シリコン型の基体および該基体の製造方法
JPH0137857B2 (enExample)
KR900000073B1 (ko) 전계효과트랜지스터
US5096842A (en) Method of fabricating bipolar transistor using self-aligned polysilicon technology
JPS5860574A (ja) 電界効果トランジスタの製造方法
JPS6027173A (ja) 電界効果トランジスタおよびその製造方法
US20240088281A1 (en) Dope p galium nitride electronic component
JP2550013B2 (ja) 電界効果トランジスタ
US5406098A (en) Semiconductor circuit device and method for production thereof
JP2703883B2 (ja) Ｍｉｓトランジスタ及びその製造方法
GB2074374A (en) Method of making field effect transistors
JPH05183153A (ja) 半導体装置
JP3105229B2 (ja) 半導体装置及びその製造方法
US4923824A (en) Simplified method of fabricating lightly doped drain insulated gate field effect transistors
JPH09219528A (ja) Ｍｏｓトランジスタおよびその製造方法
JPS63227059A (ja) 半導体装置およびその製造方法